TLP668J_07 [TOSHIBA]

Household Use Equipment; 家用设备
TLP668J_07
型号: TLP668J_07
厂家: TOSHIBA    TOSHIBA
描述:

Household Use Equipment
家用设备

文件: 总6页 (文件大小:196K)
中文:  中文翻译
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TLP668J(S)  
TOSHIBA Photocoupler GaAAs Ired & Photo-Triac  
TLP668J(S)  
Unit: mm  
Office Machine  
Household Use Equipment  
Triac Driver  
Solid State Relay  
The TOSHIBA TLP668J(S) consists of a zero voltage crossing turn-on  
photo-triac optically coupled to a GaAlAs infrared emitting diode in a six  
lead plastic DIP package.  
Peak off-state voltage: 600V (Min.)  
Trigger LED current: 3mA (Max.)  
On-state current: 100mA (Max.)  
JEDEC  
TOSHIBA  
11-7A9  
Isolation voltage: 5000Vrms (Min.)  
UL recognized: UL1577, file No. E67349  
BSI approved: BS EN60065:2002, file No. 8385  
Weight: 0.39 g (Typ.)  
BS EN60950-1:2002, file No. 8386  
SEMCO approved:EN60065,EN60950-1,EN60335-1  
Certificate no.708960  
Option(D4) type  
VDE approved: DIN EN 60747-5-2  
Certificate No. 40009302  
Maximum operating insulation voltage : 890Vpk  
Highest permissible over voltage  
: 8000 Vpk  
(Note) When an EN60747-5-2 approved type is needed, please designate the “Option(D4)”.  
•Construction mechanical rating  
7.62 mm pich  
standard type  
10.16 mm pich  
TLPXXXF type  
Creepage distance  
Clearance  
Insulation thickness  
7.0 mm (Min.)  
7.0 mm (Min.)  
0.5 mm (Min.)  
8.0 mm (Min.)  
8.0 mm (Min.)  
0.5 mm (Min.)  
Pin configuration (top view)  
1: Anode  
2: Cathode  
3: N.C.  
4:Terminal 1  
6:Terminal 2  
1
2
3
6
ZC  
4
ZC:Zero-cross circuit  
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2007-10-01  
TLP668J(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
30  
0.3  
1
mA  
F
Forward current derating (Ta25°C)  
Peak forward current (100μs pulse, 100pps)  
Reverse voltage  
I /°C  
F
mA /°C  
I
A
V
FP  
V
5
R
Junction temperature  
Tj  
125  
600  
°C  
V
Off-state output terminal voltage  
V
DRM  
Ta=25°C  
Ta=70°C  
100  
50  
On-state RMS current  
I
mA  
T(RMS)  
On-state current derating (Ta25°C)  
IT/°C  
-1.1  
2
mA /°C  
Peak on-state current (100μs pulse, 120pps)  
Peak nonrepetitive surge current (Pw=10ms,DC=10%)  
I
A
A
TP  
I
1.2  
TSM  
°C  
°C  
°C  
°C  
Junction temperature  
T
110  
40~100  
55~125  
260  
j
Operating temperature range  
Storage temperature range  
T
opr  
T
stg  
sol  
Lead soldering temperature (10s)  
Isolation voltage (AC,1min. , R.H. 60%)  
T
(Note 2)  
BV  
5000  
Vrms  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note 2) Device considered a two terminal device:Pins1,2 and 3 shorted together and pin4 and pin6 shorted together.  
Recommended Operating Conditions  
Characteristic  
Supply voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
4.5  
6
V
240  
7.5  
1
Vac  
mA  
A
AC  
Forward current  
I
F
Peak on-state current  
Operating temperature  
I
TP  
T
opr  
10  
85  
°C  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
2
2007-10-01  
TLP668J(S)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Forward voltage  
Reverse current  
Capacitance  
V
I
= 10 mA  
F
1.2  
1.4  
30  
10  
1.7  
10  
V
μA  
pF  
nA  
V
F
I
V = 3 V  
R
R
C
V = 0, f=1MHz  
=600V  
T
Peak off-state current  
Peak on-state voltage  
Holding current  
I
V
1000  
3.0  
DRM  
DRM  
I =100mA  
TM  
V
TM  
I
0.6  
mA  
H
Critical rate of rise of  
off-state voltage  
Critical rate of rise of  
dv/dt  
Vin=240Vrms , Ta=85°C  
Vin=60Vrms , IT=15mA  
500  
0.2  
V/μs  
V/μs  
200  
dv/dt(c)  
commutating voltage  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Trigger LED current  
I
V
=6V ,Resistive load  
T
3
50  
600  
mA  
V
FT  
Inhibit voltage  
V
I
I
=Rated I  
FT  
IH  
F
F
200  
0.8  
Leakage in inhibited state  
Capacitance (input to output)  
Isolation resistance  
I
=Rated I , V =rated V  
DRM  
μA  
pF  
Ω
IH  
FT  
T
C
R
V
V
=0 , f=1MHz  
S
S
S
S
1×1012  
5000  
1014  
=500V  
AC , 1minute  
Vrms  
Vdc  
Isolation voltage  
BVS  
AC , 1second,in oil  
DC , 1minute,in oil  
10000  
10000  
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2007-10-01  
TLP668J(S)  
4
2007-10-01  
TLP668J(S)  
5
2007-10-01  
TLP668J(S)  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-10-01  

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