TLP3617 [TOSHIBA]

Solid State Relay, TRIGGER OUTPUT SOLID STATE RELAY, 2500 V ISOLATION-MAX, PLASTIC, 11-10J1, DIP-8/7;
TLP3617
型号: TLP3617
厂家: TOSHIBA    TOSHIBA
描述:

Solid State Relay, TRIGGER OUTPUT SOLID STATE RELAY, 2500 V ISOLATION-MAX, PLASTIC, 11-10J1, DIP-8/7

分离技术 隔离技术 输出元件 光电
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中文:  中文翻译
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TLP3617  
TOSHIBA Photocoupler GaAs Ired & Photo-Triac  
Tentative  
TLP3617  
Triac Drivers  
Unit: mm  
Programmable Controllers  
AC-Output Modules  
Solid-State Relays  
The TOSHIBA TLP3616 consists of a photo-triac optically coupled to a  
gallium arsenide infrared-emitting diode in an 8-lead plastic DIP  
package.  
Peak off-state voltage: 600 V (min.)  
Trigger LED current: 10 mA (max.)  
On-state current: 1.2 A  
(max.)  
rms  
Isolation voltage: 2500 V  
Zero-crossing function  
(min.)  
rms  
UL recognized: UL1577, File No. E67349  
TOSHIBA  
11-10J1  
Pin Configuration (top view)  
Weight: 0.59 g  
1
2
8
3
6
5
ZC  
4
1: Cathode  
2: Anode  
3: Cathode  
4: Cathode  
5: Triac gate  
6: Triac T1  
8: Triac T2  
1
2005-01-11  
TLP3617  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
0.7  
1
mA  
F
Forward current derating (Ta 53°C)  
Peak forward current (100-µs pulse, 100 pps)  
Reverse voltage  
I / °C  
F
mA / °C  
I
A
V
FP  
V
5
R
Junction temperature  
T
125  
600  
1.2  
1.0  
°C  
V
j
Offstate output terminal voltage  
V
DRM  
Ta = 25°C  
Ta = 40°C  
Onstate RMS current  
I
A
T(RMS)  
Onstate current derating (Ta 40°C)  
I / °C  
13  
mA / °C  
A
T
Peak current from snubber circuit  
(100-µs pulse, 120 pps)  
I
2
SP  
Peak nonrepetitive surge current (50 Hz, peak)  
Junction temperature  
I
5
A
TSM  
T
115  
40~125  
−20~80  
260  
°C  
°C  
°C  
°C  
j
Storage temperature range  
T
stg  
opr  
Operating temperature range  
T
Lead soldering temperature (10 s)  
T
sol  
Isolation voltage (AC, 1 min., R.H. 60%)  
(Note)  
BV  
2500  
V
rms  
S
Note: Device considered a twoterminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6 and 8 are  
shorted together.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min  
Typ.  
Max  
Unit  
Supply voltage  
Forward current  
V
15  
20  
240  
25  
1
V
ac  
AC  
I
mA  
A
F
Peak current from snubber circuit  
Operating temperature  
I
SP  
T
20  
80  
°C  
opr  
2
2005-01-11  
TLP3617  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
= 10 mA  
F
Min  
Typ.  
Max  
Unit  
V
I
1.0  
1.15  
1.3  
10  
V
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
µA  
pF  
µA  
R
C
T
V = 0, f = 1 MHz  
= 600 V, Ta = 110°C  
30  
Peak offstate current  
I
V
100  
DRM  
DRM  
Peak onstate voltage  
V
I
= 1.2 A  
TM  
3.0  
V
TM  
Critical rate of rise of  
dv / dt  
V
V
= 240 V  
(Fig. 1)  
500  
V / µs  
in  
in  
rms  
offstate voltage  
Critical rate of rise of  
commutating voltage  
= 240 V , I = 0.5 A  
rms T rms  
dv / dt (c)  
5
V / µs  
(Fig. 1)  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Trigger LED current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
10  
Unit  
mA  
V
I
V = 3 V  
T
FT  
Inhibit voltage  
V
I = Rated I  
20  
IH  
IH  
F
FT  
FT  
I = Rated I  
F
Leakage in inhibited state  
I
200  
µA  
V
= Rated V  
T
DRM  
Isolation Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 0, f = 1 MHz  
Min  
Typ.  
1.5  
Max  
Unit  
Capacitance  
C
R
V
V
pF  
S
S
S
(input to output)  
Isolation resistance  
= 500 V, R.H. 60%  
5×1010  
2500  
1014  
S
AC, 1 minute  
Vrms  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
5000  
5000  
V
dc  
Fig. 1: dv / dt test circuit  
R
in  
5 V, V  
CC  
0 V  
8
2
3
V
120  
CC  
V
in  
6
5
dv / dt(c)  
dv / dt  
R
L
3
2005-01-11  
TLP3617  
I
Ta  
T(RMS)  
1.2  
I
Ta  
F
100  
1.0  
80  
60  
0.8  
0.6  
40  
20  
0
0.4  
0.2  
0
-20  
0
20  
40  
60  
80  
100  
120  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– V  
F
I
– D  
F
FP  
R
5000  
3000  
100  
Pulse width 100 µs  
Ta = 25°C  
Ta = 25°C  
50  
30  
1000  
10  
500  
300  
5
3
100  
1
50  
30  
0.5  
0.3  
10  
3
10-3  
3
10-2  
Duty cycle ratio  
3
10-1  
3
100  
0.1  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
D
R
Forward voltage  
V
(V)  
F
ΔV /ΔTa – I  
I
– V  
FP FP  
F
F
1000  
-2.8  
-2.4  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
500  
300  
100  
50  
30  
10  
Pulse width 10 µs  
repetitive frequency  
= 100 Hz  
5
3
Ta = 25°C  
0.1  
0.3 0.5  
1
3
5
10  
(mA)  
30 50  
0
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
(V)  
3.0  
Forward current  
I
F
Pulse forward voltage  
V
FP  
4
2005-01-11  
TLP3617  
5
2005-01-11  
TLP3617  
RESTRICTIONS ON PRODUCT USE  
030619EBC  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
The products described in this document are subject to the foreign exchange and foreign trade laws.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
6
2005-01-11  

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