TLP361J(IFT7)(D4) [TOSHIBA]

Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, PLASTIC, 11-5B2, DIP-4;


型号：	TLP361J(IFT7)(D4)
厂家：	TOSHIBA
描述：	Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, PLASTIC, 11-5B2, DIP-4 三端双向交流开关输出元件光电
文件：	总6页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TLP361J

TOSHIBA Photocoupler GaAs IRED & PHOTO-TRIAC

Tentative

TLP361J

Unit: mm

Triac Drivers

Programmable Controllers

AC-Output Modules

Solid State Relays

The TOSHIBA TLP361J consists of a zero-voltage-crossing turn-on photo-triac

optically coupled to a gallium-arsenide infrared-emitting diode in a four-lead

plastic DIP package.

• Peak Off-State Voltage

• Trigger LED Current

: 600 V (Min)

: 10 mA (Max)

• On-State Current

• Isolation Voltage

• Zero Crossing Function

• UL-Recognized

•Option (D4) type

TÜV approved

: 100 mA (Max)

: 5000 Vrms (Min)

JEDEC

TOSHIBA

Weight: 0.26 g

―

11-5B2

: UL1577, file No. E67349

: DIN EN60747-5-2

Certificate No. R50033433

: 890 Vpk

Maximum Operating Insulation Voltage

Maximum Permissible Overvoltage

(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”

: 8000 Vpk

PIN CONFIGURATION (TOP VIEW)

•Construction Mechanical Rating

7.62 mm pitch

10.16 mm pitch

TLPXXX type

1: ANODE

Creepage Distance

Clearance

7.0 mm (Min)

0.4 mm (Min)

8.0 mm (Min)

0.4 mm (Min)

2: CATHODE

3: TERMINAL1

4: TERMINAL2

Insulation Thickness

•Trigger LED Current

Trigger LED Current (mA)

Classi−

fication*

Marking of

Classification

V =3V, Ta=25°C

Min.

Max.

(IFT7)

７

Standard

―

T7、blank

*Example: “(IFT7)”; “TLP361J(IFT7)”

(Note) When specifying the application type name for certification testing, be sure to use the standard product type

name, e.g.,

TLP361J(IFT7): TLP361J

2005-01-31

TLP361J

Maximum Ratings (Ta=25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Forward Current

−0.7

Forward Current Derating (Ta ≥ 53°C)

Peak Forward Current (100 µs pulse, 100 pps)

Reverse Voltage

∆I /°C

mA /°C

Junction Temperature

125

600

°C

Off-State Output Terminal Voltage

DRM

Ta = 25°C

Ta = 70°C

100

On-State RMS Current

T(RMS)

On-State Current Derating (Ta ≥ 25°C)

∆I /°C

-1.1

mA /°C

Peak On-State Current (100 µs pulse, 120 pps)

Peak Nonrepetitive Surge Current (Pw = 10 ms, DC = 10%)

1.2

TSM

°C

Junction Temperature

115

Storage Temperature Range

Operating Temperature Range

Lead Soldering Temperature (10s)

−55~125

−40~100

260

stg

opr

sol

Isolation Voltage (AC, 1 min., R.H.≤ 60%)

(Note

5000

Vrms

(Note 1): Pins_1 and 2 are shorted together and pins 3 and 4 are shorted together.

Recommended Operating Conditions

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

—

Supply Voltage

240

Forward Current

Peak On-State Current

Operating Temperature

−25

—

°C

opr

2005-01-31

TLP361J

Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

= 10 mA

MIN.

TYP.

MAX. UNIT

Forward Voltage

Reverse Current

Capacitance

1.0

—

1.15

—

1.3

µA

V = 5 V

V = 0, f = 1 MHz

= 600 V

—

Peak Off-State Current

Peak On-State Voltage

Holding Current

1000

3.0

—

DRM

= 100 mA

1.7

0.6

—

Critical Rate of Rise of

dv/dt

Vin = 240 Vrms , Ta = 85°C

(Note 2)

200

500

0.2

V/µs

—

Off-State Voltage

Critical Rate of Rise of

Commutating Voltage

dv/dt(c) Vin = 60 Vrms , I = 1 5mA

—

Coupled Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

= 3 V

MIN.

TYP.

MAX. UNIT

—

Trigger LED Current

—

Inhibit Voltage

I = Rated I

Leakage in Inhibited State

Turn-on Time

200

µA

µs

—

600

100

Rated V

DRM

T =

= 3 →1.5 V , R = 20 Ω

I = Rated

Χ1.5

Isolation Characteristics (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

TYP.

0.8

UNIT

MIN.

—

MAX.

—

Capacitance (Input to Output)

Isolation Resistance

= 0 , f = 1 MHz

= 500 V, R.H. ≤ 60%

Ω

1×10

AC, 1 minute

5000

—

Vrms

Vdc

Isolation Voltage

AC, 1 second, in oil

DC, 1 minute, in oil

10000

—

(Note 2): dv/dt TEST CIRCUIT

Rin

+5 V

Vin

120 Ω

Vcc

4 kΩ

dv/dt (c)

dv/dt

2005-01-31

TLP361J

– T

I (RMS) – T

T a

100

200

160

120

－20

(°C)

100

120

－20

100

120

Ambient temperature

(°C)

– D

– V

3000

1000

100

Pulse width ≤ 100 µs

= 25 °C

500

300

100

0.5

0.3

0.1

－

10⁰

0.6

0.8

1.0

1.2

1.4

1.6

1.8

－

Duty cycle ratio

Forward voltage

(V)

ꢀV /ꢀT – I

– V

FP FP

－3.2

－2.8

1000

500

300

－2.4

－2.0

100

－1.6

－1.2

－0.8

－0.4

Pulse width ≤ 10 µs

Repetitive

Frequency = 100 Hz

= 25 °C

0.1

0.3 0.5

30 50

0.6

1.0

1.4

1.8

2.2

2.6

Forward current

(mA)

Pulse forward voltage

(V)

*: The above graphs show typical characteristics.

2005-01-31

TLP361J

Normalized

– T

Normalized I – T

H a

= 3 V

1.2

0.5

0.3

0.5

0.3

0.1

－40

0.1

－40

－20

100

－20

100

Ambient temperature

(°C)

Ambient temperature

(°C)

Normalized

– T

Normalized

– T

DRM

10³

10²

1.4

1.2

1.0

DRM

= Rated

0.8

0.6

10¹

10⁰

0.4

0.2

－40

－20

100

(°C)

100

Ambient temperature

(°C)

Normalized

– T

Normalized

– T

IH a

1.2

0.5

0.3

0.5

0.3

= Rated I

= Rated V

DRM

I_F= Rated I_FT

0.1

－40

0.1

－40

－20

100

－20

100

Ambient temperature

(°C)

Ambient temperature

(°C)

*: The above graphs show typical characteristics.

2005-01-31

TLP361J

RESTRICTIONS ON PRODUCT USE

030619EBC

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• The products described in this document are subject to the foreign exchange and foreign trade laws.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced

and sold, under any law and regulations.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,

cut, crush or dissolve chemically.

2005-01-31

TLP361J(IFT7)(D4) [TOSHIBA]

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