TLP285(V4-Y,F [TOSHIBA]

Transistor Output Optocoupler, 1-Element, 3750V Isolation;
TLP285(V4-Y,F
型号: TLP285(V4-Y,F
厂家: TOSHIBA    TOSHIBA
描述:

Transistor Output Optocoupler, 1-Element, 3750V Isolation

输出元件 光电
文件: 总16页 (文件大小:590K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP285  
TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR  
TLP285  
Power Supplies  
Unit: mm  
Programmable Controllers  
Hybrid ICs  
The Toshiba TLP285 consists of photo transistor, optically coupled to an  
infrared emitting diode. TLP285 is housed in the SOP4 package, very small  
and thin coupler.  
Since TLP285 is guaranteed wide operating temperature (Ta = -55 to 110 ˚C)  
and high isolation voltage (3750 Vrms), it’s suitable for high-density surface  
mounting applications such as small switching power supplies and  
programmable controllers.  
Collector-Emitter Voltage : 80 V (min)  
Current Transfer Ratio  
: 50% (min)  
Rank GB  
: 100% (min)  
Isolation Voltage  
: 3750 Vrms (min)  
Guaranteed performance over -55 to 110 ˚C  
TOSHIBA  
11-3A1  
UL-recognized  
cUL-recognized  
: UL 1577, File No.E67349  
Weight: 0.05 g (typ.)  
: CSA Component Acceptance Service No.5A  
File No.E67349  
VDE-approved  
: EN 60747-5-5 (Note 1)  
Pin Configuration (top view)  
1
2
4
3
Note 1: When a VDE approved type is needed,  
please designate the Option(V4).  
Construction Mechanical Rating  
1: ANODE  
2: CATHODE  
3: EMITTER  
4: COLLECTOR  
Creepage Distance  
Clearance  
Insulation Thickness  
5.0 mm (min)  
5.0 mm (min)  
0.4 mm (min)  
Start of commercial production  
2008-01  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
1
2019-06-17  
TLP285  
Current Transfer Ratio  
Current Transfer Ratio (%)  
(I /I )  
C F  
Classification  
TYPE  
Marking of Classification  
I = 5 mA, V = 5 V, Ta = 25°C  
F
CE  
(Note1)  
Min  
50  
Max  
600  
Blank  
Blank,Y , YE, G, G , GR, B, BL, GB  
Rank Y  
50  
150  
300  
600  
600  
150  
200  
300  
400  
YE, Y■  
Rank GR  
Rank BL  
100  
200  
100  
75  
GR, G, G■  
BL, B  
GB, GR, G, G, BL, B  
TLP285  
Rank GB  
Rank YH  
Rank GRL  
Rank GRH  
Rank BLL  
Y
100  
150  
200  
G
G
B
Note1: Ex. rank GB: TLP285 (GB)  
Note: Application type name for certification test, please use standard product type name, i.e.  
TLP285 (GB): TLP285  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
2
2019-06-17  
TLP285  
Absolute Maximum Ratings (Ta = 25°C)  
RATING  
CHARACTERISTIC  
SYMBOL  
UNIT  
Forward Current  
I
50  
-1.0  
1
mA  
mA/°C  
A
F(RMS)  
Forward Current Derating (Ta 75°C)  
I /°C  
F
Pulse Forward Current  
Reverse Voltage  
(Note 1)  
I
FP  
V
P
5
V
R
D
100  
mW  
mW/°C  
Diode power dissipation  
P /°C  
Diode power dissipation derating (Ta 75°C)  
Junction Temperature  
-2.0  
125  
D
T
°C  
V
j
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Collector Current  
V
V
80  
CEO  
ECO  
7
V
I
50  
mA  
C
Collector Power Dissipation  
P
150  
mW  
mW/°C  
°C  
C
P /°C  
-1.5  
125  
Collector Power Dissipation Derating (Ta 25°C)  
Junction Temperature  
C
T
j
Operating Temperature Range  
T
-55 to 110  
-55 to 125  
260  
°C  
opr  
Storage Temperature Range  
T
°C  
stg  
sol  
Lead Soldering Temperature (10 s)  
Total Package Power Dissipation  
T
°C  
P
200  
mW  
mW/°C  
Vrms  
T
P /°C  
-2.0  
3750  
Total Package Power Dissipation Derating (Ta 25°C)  
T
Isolation Voltage  
(Note 2)  
BV  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Pulse width 100 μs, frequency 100 Hz  
Note 2: AC, 60 s, R.H.60 %  
Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted  
together.  
Electrical Characteristics (Ta = 25°C)  
CHARACTERISTIC  
Forward Voltage  
SYMBOL  
TEST CONDITION  
= 10 mA  
F
MIN  
TYP.  
MAX  
UNIT  
V
I
1.0  
80  
7
1.15  
1.3  
10  
V
μA  
pF  
V
F
Reverse Current  
I
V = 5 V  
R
R
Capacitance  
C
T
V = 0 V, f = 1 MHz  
30  
Collector-Emitter Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
(BR)CEO  
(BR)ECO  
C
E
V
V
= 48 V,  
CE  
0.01  
(2)  
0.1  
(10)  
Ambient Light Below  
(100 x)  
V
Ambient Light Below  
(100 x)  
μA  
Collector Dark Current  
(Note 2)  
(Note 1)  
(Note 1)  
I
CEO  
= 48 V, Ta = 85 °C  
CE  
2
(4)  
50  
(50)  
μA  
Capacitance  
(Collector to Emitter)  
C
CE  
V = 0 V, f = 1 MHz  
10  
pF  
Note 1: Irradiation to marking side using standard light bulb.  
Note 2: Because of the construction, leak current might be increased by ambient light.  
Please use photocoupler with less ambient light.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
3
2019-06-17  
TLP285  
Coupled Electrical Characteristics (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN  
TYP.  
MAX  
UNIT  
%
50  
100  
600  
600  
60  
I
I
= 5 mA, V = 5 V  
F
F
CE  
Current Transfer Ratio  
I /I  
C F  
Rank GB  
Rank GB  
= 1 mA, V = 0.4 V  
CE  
Saturated CTR  
I /I  
C F(sat)  
%
30  
I
I
= 2.4 mA, I = 8 mA  
0.4  
C
C
F
Collector-Emitter  
V
0.2  
V
CE(sat)  
= 0.2 mA, I = 1 mA  
F
Saturation Voltage  
Rank GB  
0.4  
10  
OFF-State Collector Current  
I
V
= 0.7 V, V = 48 V  
μA  
C(off)  
F
CE  
Isolation Characteristics (Ta = 25°C)  
CHARACTERISTIC  
Capacitance  
SYMBOL  
TEST CONDITION  
= 0 V, f = 1 MHz  
MIN  
TYP.  
0.8  
MAX  
UNIT  
C
R
V
V
pF  
Ω
S
S
S
(Input to Output)  
12  
14  
Isolation Resistance  
= 500 V, R.H.60 %  
1×10  
3750  
10  
S
Isolation Voltage  
BV  
AC, 60 s  
Vrms  
S
Switching Characteristics (Ta = 25°C)  
CHARACTERISTIC  
Rise Time  
SYMBOL  
TEST CONDITION  
MIN  
TYP.  
MAX  
UNIT  
t
2
3
r
Fall Time  
t
f
V
= 10 V, I = 2 mA  
C
R = 100 Ω  
CC  
L
μs  
Turn-On Time  
Turn-Off Time  
Turn-On Time  
Storage Time  
Turn-Off Time  
t
t
3
on  
off  
3
t
2
ON  
R = 1.9 kΩ  
(Fig.1)  
L
CC  
t
25  
40  
μs  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
Fig.1: Switching Time Test Circuit  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
4
2019-06-17  
TLP285  
I
- Ta  
P
- Ta  
C
F
100  
80  
60  
40  
20  
0
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
-20  
0
20  
40  
60  
80  
100 120  
-20  
0
20  
40  
60  
80  
100 120  
Ambient temperature Ta (˚C)  
Ambient temperature Ta (˚C)  
I
- D  
I
- V  
F
F P  
R
F
3000  
100  
Pulse Width  
100μs  
Ta=25˚C  
1000  
500  
300  
10  
1
100˚C  
75˚C  
50˚C  
25˚C  
0˚C  
-25˚C  
-50˚C  
100  
50  
30  
0.1  
10  
100  
10-1  
R
10-2  
10-3  
0.6  
0.8  
1
1.2  
1.4  
1.6  
Duty cycle ratio  
D
Forward voltage  
V
(V)  
F
V  
Ta - I  
I
– V  
F /  
F
F P  
F P  
-3.2  
1000  
100  
10  
-2.8  
-2.4  
-2  
-1.6  
-1.2  
-0.8  
-0.4  
Pulse width10μs  
Repetitive  
Frequency=100Hz  
Ta=25°C  
1
0.6  
1
1.4  
1.8  
2.2  
FP  
2.6  
3
50  
0.1  
1
10  
0.5  
5
Forward current  
I
(mA)  
Pulse forward voltage  
V
(V)  
F
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
5
2019-06-17  
TLP285  
I
- V  
I
- V  
C E  
C
C E  
C
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
Ta=25˚C  
Ta=25˚C  
P C ( m a x )  
5 0  
3 0  
2 0  
5 0  
3 0  
2 0  
1 5  
1 0  
1 5  
5
1 0  
I
= 2 m A  
F
I
= 5 m A  
F
0
0
0.5  
Collector-emitter voltage  
1
0
5
10  
V
(V)  
CE  
Collector-emitter voltage  
V
(V)  
CE  
I
- I  
I
-Ta  
CEO  
C
F
101  
100  
100  
10  
1
10-1  
10-2  
10-3  
S A M P L E  
A
V
=48V  
CE  
S A M P L E  
B
24V  
10V  
5V  
V
CE  
=10V  
V =5V  
CE  
V =0.4V  
CE  
10-4  
0.1  
0
20  
40  
60  
80  
100  
120  
0.1  
1
10  
(mA)  
100  
Forward current  
I
F
Ambient temperature Ta (°C)  
I
I
- I  
F
C /  
F
1000  
100  
10  
V
=10V  
=5V  
CE  
V
CE  
V
=0.4V  
CE  
S A M P L E  
A
S A M P L E  
B
0.1  
1
10  
(mA)  
100  
Forward current  
I
F
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
6
2019-06-17  
TLP285  
V
- Ta  
I
- Ta  
C
C E ( s a t )  
100  
10  
0.28  
0.24  
0.2  
25  
10  
5
0.16  
0.12  
0.08  
0.04  
0
1
1
I =0.5mA  
F
0.1  
0.01  
I
I
=8mA, I =2.4mA  
C
F
F
=1mA, I =0.2mA  
C
V =5V  
CE  
-40 -20  
0
20 40 60 80 100 120  
-40 -20  
0
20  
40  
60  
80 100 120  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
Switching time - Ta  
Switching time - R  
L
1000  
100  
Ta=25˚C  
I
=16mA  
F
t
V =5V  
CC  
OFF  
t
OFF  
t
s
100  
10  
1
10  
t
s
t
ON  
1
I
=16mA  
F
V
=5V  
CC  
R =1.9kΩ  
L
t
ON  
0.1  
-60 -40 -20  
0
20  
40  
60  
80 100 120  
1
10  
100  
Ambient temperature Ta (°C)  
Load resistance  
R
L
(kΩ)  
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
7
2019-06-17  
TLP285  
Soldering and Storage  
1. Soldering  
Soldering  
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as  
much as possible by observing the following conditions.  
1) Using solder reflow  
Temperature profile example of lead (Pb) solder  
(°C)  
240  
This profile is based on the device’s  
maximum heat resistance guaranteed  
value.  
0  
Set the preheat temperature/heating  
temperature to the optimum temperature  
corresponding to the solder paste  
type used by the customer within the  
described profile.  
0  
140  
less than 30s  
60 to 120s  
Time  
(s)  
Temperature profile example of using lead (Pb)-free solder  
(°C)  
This profile is based on the device’s  
maximum heat resistance guaranteed  
value.  
Set the preheat temperature/heating  
temperature to the optimum temperature  
corresponding to the solder paste  
type used by the customer within the  
described profile.  
260  
230  
190  
180  
60 to 120s  
30 to 50s  
Time  
(s)  
Reflow soldering must be performed once or twice.  
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.  
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)  
Please preheat it at 150°C between 60 and 120 seconds.  
Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.  
3) Using a soldering iron  
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may  
be heated at most once.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
8
2019-06-17  
TLP285  
2. Storage  
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.  
2) Follow the precautions printed on the packing label of the device for transportation and storage.  
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,  
respectively.  
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty  
conditions.  
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during  
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the  
solderability of the leads.  
6) When restoring devices after removal from their packing, use anti-static containers.  
7) Do not allow loads to be applied directly to devices while they are in storage.  
8) If devices have been stored for more than two years under normal storage conditions, it is recommended  
that you check the leads for ease of soldering prior to use.  
© 2019  
9
2019-06-17  
Toshiba Electronic Devices & Storage Corporation  
TLP285  
Embossed-Tape Packing (TP) Specification for Mini-Flat Couplers  
1. Applicable Package  
Package  
SOP4  
Product Type  
Mini-Flat Coupler  
2. Product Naming System  
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of  
classification is as below.  
(Example)  
TLP285(GB-TP, F)  
[[G]]/RoHS COMPATIBLE (Note 1)  
Tape type  
CTR rank  
Device name  
Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product.  
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on  
the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
3. Tape Dimensions  
3.1 Orientation of Device in Relation to Direction of Tape Movement  
Device orientation in the recesses is as shown in Figure 2.  
Tape feed  
Figure 2 Device Orientation  
3.2 Tape Packing Quantity: 2500 devices per reel  
3.3 Empty Device Recesses Are as Shown in Table 1.  
Table 1 Empty Device Recesses  
Standard  
0 device  
Remarks  
Occurrences of 2 or more  
successive empty device  
recesses  
Within any given 40-mm section of  
tape, not including leader and trailer  
Single empty device  
recesses  
6 device (max.) per reel  
Not including leader and trailer  
3.4 Start and End of Tape  
The start of the tape has 50 or more empty holes. The end of tape has 50 or more empty holes and two empty  
turns only for a cover tape.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
10  
2019-06-17  
TLP285  
3.5 Tape Specification  
(1) Tape material: Plastic (protection against electrostatics)  
(2) Dimensions: The tape dimensions are as shown in Figure 3 and table 2.  
Unit: mm  
2.0 ± 0.1  
0.3 ± 0.05  
+0.1  
0  
F
G
φ1.5  
K
0
A
φ1.6 ± 0.1  
2.5 ± 0.2  
Figure 3 Tape Forms  
Table 2 Tape Dimensions  
Unit: mm  
Unless otherwise specified: ±0.1  
Symbol  
Dimension  
Remark  
A
B
D
E
F
3.1  
7.5  
5.5  
1.75  
8.0  
4.0  
2.3  
Center line of indented square hole and sprocket hole  
Distance between tape edge and hole center  
+0.1  
Cumulative error  
Cumulative error  
Internal space  
(max) per 10 feed holes  
(max) per 10 feed holes  
-0.3  
+0.1  
-0.3  
G
K
0
© 2019  
Toshiba Electronic Devices & Storage Corporation  
11  
2019-06-17  
TLP285  
3.6 Reel  
(1) Material: Plastic  
(2) Dimensions: The reel dimensions are as shown in Figure 4 and Table 3.  
Table 3 Reel Dimensions  
Unit: mm  
Symbol  
Dimension  
U
A
B
Φ330 ±2  
Φ80 ±1  
E
C
Φ13 ±0.5  
2.0 ±0.5  
4.0 ±0.5  
13.5 ±0.5  
17.5 ±1.0  
E
U
W1  
W2  
W1  
W2  
Figure 4 Reel Form  
4. Packing  
Packed in a shipping carton.  
5. Label Indication  
The carton bears a label indicating the product number, the symbol representing classification of standard, the  
quantity, the lot number and the Toshiba company name.  
6. Ordering Method  
When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as  
shown in the following example.  
(Example)  
TLP285(GB-TP,F) 2500 pcs  
Quantity (must be a multiple of 2500)  
[[G]]/RoHS COMPATIBLE (Note 1)  
Tape type  
CTR rank  
Device name  
Note 1 : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product.  
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on  
the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
12  
2019-06-17  
TLP285  
EN 60747-5-5 Option (V4) Specification  
Types  
: TLP285 (Note 1)  
Type designations for “option: (V4)”, which are tested under EN 60747 requirements.  
Ex.: TLP285 (V4-GB-TP,F)  
V4 : EN 60747 option  
GB: CTR rank type  
TP : Standard tape & reel type  
F
: [[G]]/RoHS COMPATIBLE (Note 2)  
Note 1: Use TOSHIBA standard type number for safety standard application.  
Ex.: TLP285 (V4-GB-TP,F) TLP285  
Note 2: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product.  
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on  
the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
EN 60747 Isolation Characteristics  
Description  
Symbol  
Rating  
Unit  
Application classification  
for rated mains voltage 150Vrms  
for rated mains voltage 300Vrms  
I-IV  
I-III  
Climatic classification  
Pollution degree  
55 / 110 / 21  
2
Maximum operating insulation voltage  
V
707  
Vpk  
Vpk  
IORM  
Input to output test voltage, Method A  
Vpr=1.6 × V , type and sample test  
IORM  
V
pr  
V
pr  
1131  
tp=10s, partial discharge<5pC  
Input to output test voltage, Method B  
Vpr=1.875 × V , 100% production test  
IORM  
1325  
6000  
Vpk  
Vpk  
tp=1s, partial discharge<5pC  
Highest permissible overvoltage  
(transient overvoltage, tpr=60s)  
V
TR  
Safety limiting values (max. permissible ratings in case of fault,  
also refer to thermal derating curve)  
current (input current I , Psi=0)  
F
power (output or total power dissipation)  
temperature  
I
P
T
250  
400  
150  
mA  
mW  
°C  
si  
si  
si  
9
>
Insulation resistance  
V =500V, Ta=Tsi  
IO  
R
si  
10  
Ω
© 2019  
Toshiba Electronic Devices & Storage Corporation  
13  
2019-06-17  
TLP285  
Insulation Related Specifications  
Minimum creepage distance  
Minimum clearance  
Cr  
Cl  
5.0 mm  
5.0 mm  
0.4 mm  
175  
Minimum insulation thickness  
Comparative tracking index  
ti  
CTl  
Note: If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.  
If this is not permissible, the user shall take suitable measures.  
Note: This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.  
Maintenance of the safety data shall be ensured by means of protective circuit.  
VDE test sign:  
V
Marking on packing  
VDE  
Marking Example  
CTR Rank Marking  
Mark for option(V4)  
v
P285  
Type name  
1pin indication  
Lot No.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
14  
2019-06-17  
TLP285  
1
Partial discharge measurement procedure according to EN 60747  
Destructive test for qualification and sampling tests.  
Figure  
Method A  
V
(6kV)  
INITIAL  
V
(for type and sampling tests,  
destructive tests)  
V (1131V)  
pr  
t1  
t3  
t
t
= 1 to 10 s  
= 1 s  
,
2
4
V
(707V)  
t
IORM  
,
tp(Measuring time for  
partial discharge)  
= 10 s  
= 12 s  
= 60 s  
0
t
t
3
t
4
P
tb  
tini  
t
t
t
b
t
1
ini  
2
Figure  
2
Partial discharge measurement procedure according to EN 60747  
Non-destructive test for100% inspection.  
Method B  
V (1325V )  
pr  
V
(for sample test, non-  
destructive test)  
V
(707V )  
IORM  
= 0.1 s  
t3, t4  
tp(Measuring time for  
partial discharge)  
tb  
= 1 s  
= 1.2 s  
t
t
P
t
3
t
b
t
4
Figure  
3
Dependency of maximum safety ratings on ambient temperature  
500  
500  
400  
300  
Psi  
(mW)  
Isi  
(mA)  
400  
300  
200  
100  
0
200  
100  
Psi  
Isi  
0
0
25  
50  
75  
100  
Ta (°C)  
125  
150  
175  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
15  
2019-06-17  
TLP285  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.  
Hardware, software and systems described in this document are collectively referred to as “Product”.  
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR  
APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical  
equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to  
control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
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Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
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The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
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SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or  
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the  
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except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of  
Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled  
substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
https://toshiba.semicon-storage.com/  
© 2019  
16  
2019-06-17  
Toshiba Electronic Devices & Storage Corporation  

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