TLP166J(F) [TOSHIBA]

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TLP166J(F)
型号: TLP166J(F)
厂家: TOSHIBA    TOSHIBA
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可控硅 光电 二极管 三端双向交流开关 输出元件
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TLP166J  
TOSHIBA Photocoupler GaAs Ired + PhotoTriac  
TLP166J  
Triac Drive  
Unit in mm  
Programmable Controllers  
ACOutput Module  
Solid State Relay  
The TOSHIBA mini flat coupler TLP166J is a small outline coupler,  
suitable for surface mount assembly.  
The TLP166J consists of a photo triac, optically coupled to a gallium  
arsenide infrared emitting diode.  
Peak offstate voltage: 600V(min.)  
Trigger LED current: 10mA(max.)  
Onstate current: 70mA(max.)  
Isolation voltage: 2500Vrms(min.)  
UL recognized: UL1577, file no. E67349  
Option(V4) type  
VDE approved: EN 60747-5-2 satisfied  
Maximum operating insulation voltage: 565Vpk  
Highest permissible over voltage: 4000Vpk  
TOSHIBA  
114C3  
Weight: 0.09 g  
Trigger LED Current  
Pin Configurations  
Trigger LED Current (mA)  
V =6V, Ta=25°C  
Type  
(Note 1)  
Marking Of  
Classification  
1
6
T
Min.  
Max.  
(IFT7)  
None  
7
T7  
T7, blank  
10  
zc  
3
4
1. Anode  
*
Exp. IFT7: TLP166J(IFT7)  
3. Cathode  
4. Terminal  
6. Terminal  
(Note 1): Application type name for certification test, please use standard  
product type name, i.e.  
1
2
TLP166J(IFT7): TLP166J  
1
2007-10-01  
TLP166J  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
0.7  
1
mA  
F
Forward current derating (Ta 53°C)  
Peak forward current (100μs pulse, 100pps)  
Reverse voltage  
ΔI / °C  
F
mA / °C  
I
A
V
FP  
V
5
R
Junction temperature  
T
125  
600  
70  
°C  
V
j
Offstate output terminal voltage  
V
DRM  
Ta=25°C  
Onstate RMS Current  
Ta=70°C  
I
mA  
T(RMS)  
40  
Onstate current derating(Ta 25°C)  
ΔI / °C  
0.67  
2
mA / °C  
A
T
Peak onstate current (100μs pulse, 120pps)  
I
TP  
Peak nonrepetitive surge current  
(PW=10ms, DC=10%)  
I
1.2  
A
TSM  
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10s)  
T
115  
55~125  
40~100  
260  
°C  
°C  
j
T
stg  
opr  
T
°C  
T
°C  
sol  
Isolation voltage (AC, 1min., R.H.60%)  
(Note 2)  
BV  
2500  
Vrms  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note 2): Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
V
15  
20  
240  
25  
1
Vac  
mA  
A
AC  
I
F
Peak onstate current  
I
TP  
Operating temperature  
T
opr  
25  
85  
°C  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
2
2007-10-01  
TLP166J  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
V
I =10mA  
1.0  
1.15  
1.3  
10  
V
μA  
pF  
nA  
V
F
F
Reverse current  
I
V =5 V  
R
R
Capacitance  
C
V=0, f=1MHz  
30  
T
Peak offstate current  
Peak onstate voltage  
Holding current  
I
V
=600V  
30  
1000  
2.8  
DRM  
DRM  
=70mA  
TM  
V
I
1.7  
0.6  
TM  
I
mA  
H
Critical rate of rise  
of offstate voltage  
V =240Vrms, Ta=85°C  
in  
dv / dt  
200  
500  
0.2  
V / μs  
V / μs  
(Note 3)  
(Note 3)  
Critical rate of rise  
of commutating voltage  
I =15mA, V =60Vrms  
T
in  
dv / dt(c)  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Trigger LED current  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
I
V =6V  
10  
50  
mA  
V
FT  
T
Inhibit voltage  
V
I =rated I  
F
IH  
FT  
FT  
I =rated I  
F
Leakage in inhibited state  
I
600  
μA  
IH  
V =rated V  
T
DRM  
Capacitance input to output  
Isolation resistance  
C
R
V =0, f=1MHz  
S
1×1012  
2500  
0.8  
1014  
pF  
S
S
V =500V, R.H.60%  
S
AC, 1 minute  
Vrms  
Vdc  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
5000  
5000  
(Note 3): dv / dt Test circuit  
R
V
in  
in  
5V, V  
CC  
1
3
6
4
+
-
V
CC  
120Ω  
0V  
R
L
dv / dt (c)  
dv / dt  
4kΩ  
3
2007-10-01  
TLP166J  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2007-10-01  

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