TC75S59AFC [TOSHIBA]
Single Comparator(Open-Drain Output); 单比较器(漏极开路输出)![TC75S59AFC](http://pdffile.icpdf.com/pdf1/p00108/img/icpdf/TC75S59AFC_586620_icpdf.jpg)
型号: | TC75S59AFC |
厂家: | ![]() |
描述: | Single Comparator(Open-Drain Output) |
文件: | 总8页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TC75S59AFE/AFC
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S59AFE,TC75S59AFC
Single Comparator(Open-Drain Output)
The TC75S59AFE and TC75S59AFC are CMOS general-purpose
single comparators. The devices can operate from a single supply
TC75S59AFE
voltage and are designed for
a lower supply-current than
conventional general-purpose bipolar comparators. The output is
designed for Open-Drain Output and can supply a higher voltage
than the power supply. Therefore, it is possible to pull-up the
voltage to a level higher than that of the power supply. The
Open-Drain Output can be wired-OR with another Open-Drain
Output circuit.
* Output voltage should not exceed the maximum rating.
TC75S59AFC
Features
•
•
•
•
•
•
Low Supply Current: I
= 100 μA (typ.)
DD
Single Power Supply Operation
Wide Common Mode Input Voltage Range: V ~V
− 0.9 V
SS DD
Open-Drain Output Circuit
Low Input Bias Current
Small Package
CSON6-P-0.45
Weight
SON5-P-0.50
: 0.003 g (typ.)
CSON6-P-0.45 : 0.002 g (typ.)
Marking (top view)
Pin Assignment (top view)
TC75S59AFE
5
TC75S59AFE
V
OUT
4
4
DD
5
T H
1
2
3
IN (−)
IN (+)
V
SS
1
2
3
TC75S59AFC
TC75S59AFC
V
NC OUT
DD
6
Marking
5
4
6
5
4
TH
Monthly Indication
1
2
3
1
2
3
IN (-)
V
IN (+)
ss
1
2007-10-01
TC75S59AFE/AFC
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply Voltage
Symbol
Rating
Unit
V
, V
DD SS
±3.5 or 7
±7
V
V
Differential Input Voltage
Input Voltage
DV
IN
V
V
~V
SS DD
V
IN
Output Current
I
±35
mA
V
O
Output Voltage
V
V
~ V + 7
SS
O
D
SS
TC75S59AFE
100
Power Dissipation
P
mW
TC75S59AFC 100 (Note 1)
Operating Temperature
Strage Temperature
T
−40~85
°C
°C
opr
T
−55~125
stg
Note: Due to the CMOS structure, this device may be susceptible to latch-up. To prevent latch-up, please take the
following precautions;
•
Ensure that no I/O pin’s voltage level ever exceeds Vdd or drops below Vss. In addition, check the
power-on timing.
•
Do not subject the device to excessive noise.
(Note 1) : FR4 in board implementation
(25.4mm × 25.4mm × 1.6t, Cu Pad: 0.4mm2)
2
2007-10-01
TC75S59AFE/AFC
Electrical Characteristics (V = 5 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input Offset Voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
±1
1
±7
⎯
mV
pA
pA
V
IO
Input Offset Current
Input Bias Current
I
⎯
IO
I
⎯
1
⎯
I
Common Mode Input Voltage
Supply Current
CMV
⎯
⎯
110
94
25
5
4.1
220
⎯
IN
I
(Note1)
⎯
⎯
⎯
13
⎯
⎯
⎯
1.8
⎯
⎯
⎯
⎯
⎯
⎯
μA
dB
mA
nA
nA
V
DD
Voltage Gain
G
V
⎯
Sink Current
I
⎯
V
V
V
= 0.5 V
⎯
sink
OL
DD
Output Leakage Current
Off-state Leakage Current
Output Low Voltage
Operating Supply Voltage Range
I
⎯
= 5 V , V = 5 V
⎯
LEAK
O
I
⎯
= 0 V , V = 5 V
5
⎯
OFF
DD
O
V
⎯
I
= 5.0 mA
0.1
⎯
200
140
80
60
160
3
0.3
7.0
⎯
OL
DD
sink
V
⎯
⎯
V
t
t
t
t
⎯
Over Drive = 100 mV
TTLStep Input
PLH (1)
PLH (2)
PHL (1)
PHL (2)
Propagation Delay
(Turn on)
ns
ns
ns
⎯
⎯
⎯
Over Drive = 100 mV
TTL Step Input
⎯
Propagation Delay
(Turn off)
⎯
⎯
⎯
⎯
t
t
Over Drive = 100 mV
Over Drive = 100 mV
⎯
TLH
THL
Response Time
⎯
Electrical Characteristics (V = 3 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input Offset Voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
±1
1
±7
⎯
mV
pA
pA
V
IO
Input Offset Current
Input Bias Current
I
⎯
IO
I
⎯
1
⎯
I
Common Mode Input Voltage
Supply Current
CMV
⎯
⎯
100
18
5
2.1
200
⎯
IN
I
(Note1)
⎯
⎯
6
μA
mA
nA
nA
V
DD
Sink Current
I
⎯
V
V
V
= 0.5 V
sink
OL
DD
Output Leakage Current
Off-State Leakage Current
Output Low Voltage
I
⎯
= 3 V , V = 3 V
⎯
⎯
⎯
⎯
LEAK
O
I
⎯
= 0 V , V = 3 V
5
⎯
OFF
DD
O
V
⎯
I
= 5.0 mA
0.15
0.35
OL
sink
Propagation Delay
(Turn On)
t
t
⎯
⎯
Over Drive = 100 mV
Over Drive = 100 mV
⎯
⎯
160
70
⎯
⎯
ns
ns
PLH
Propagation Delay
(Turn Off)
PHL
⎯
⎯
t
t
Over Drive = 100 mV
Over Drive = 100 mV
⎯
⎯
170
3
⎯
⎯
TLH
THL
Response Time
ns
Note1: The current consumption of this device increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power.
3
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TC75S59AFE/AFC
I
– f
DD
10000
V
V
= 3 V
DD
SS
= GND
Ta = 25°C
1000
100
10
0.01
1
10
100
1000
10000
0.1
Frequency
f
(kHz)
I
– f
DD
10000
V
V
= 5 V
DD
SS
= GND
Ta = 25°C
1000
100
10
0.01
1
10
100
1000
10000
0.1
Frequency
f
(kHz)
4
2007-10-01
TC75S59AFE/AFC
V
– I
sink
OL
V
– I
OL
sink
3.0
2.5
5.0
4.5
4.0
V
V
= 3 V
V
V
= 5 V
DD
SS
DD
SS
= GND
= GND
Ta = 25°C
Ta = 25°C
3.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
Sink Current
I
(mA)
Sink Current
I
(mA)
sink
sink
P
– Ta
D
300
200
100
0
This data was obtained from an
unmounted standalone IC. If the IC is
mounted on a PCB, its power dissipation
will be greater. Note that, depending on
the PCB’s thermal characteristics, the
curves may differ substantially from those
shown.
−40
0
40
80
120
Ambient Temperature Ta (°C)
5
2007-10-01
TC75S59AFE/AFC
Package Dimensions
Weight: 0.003 g (Typ.)
6
2007-10-01
TC75S59AFE/AFC
Package Dimensions
CSON6-P-0.45
Weight: 0.002 g (Typ.)
7
2007-10-01
TC75S59AFE/AFC
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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