TC75S60FU [TOSHIBA]
Single Operational Amplifier; 单路运算放大器
| 型号： | TC75S60FU |
| 厂家： | 
TOSHIBA |
| 描述： | Single Operational Amplifier |
| 文件： | 总11页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC75S60F/FU
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S60F,TC75S60FU
Single Operational Amplifier
TC75S60F, TC75S60FU are CMOS operational amplifier with
low supply voltage, low supply current.
TC75S60F
Features
•
•
High slew rate: SR (V
= 3 V) = 5.1 V/μs (typ.)
DD
The power supply operation range is:
= ±0.9~3.5 V or 1.8~7 V
V
DD
•
•
•
Low supply current: I
(V
= 3 V) = 330 μA (typ.)
DD
DD
The internally phase compensated operational amplifier.
Small package
TC75S60FU
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
Absolute Maximum Ratings (Ta = 25°C)
: 0.014 g (typ.)
: 0.006 g (typ.)
Characteristics
Supply voltage
Symbol
Rating
Unit
V
, V
DD SS
7
V
V
Differential input voltage
Input voltage
DV
±7
IN
V
V
~V
DD SS
V
IN
Power dissipation
P
200
mW
°C
°C
D
Operating temperature
Storage temperature
T
opr
−40~85
T
stg
−55~125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
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TC75S60F/FU
Marking (top view)
Pin Connection (top view)
V
OUT
4
DD
5
5
4
3
S H
1
2
3
1
2
IN (+)
IN (−)
V
SS
Electrical Characteristics
DC Characteristics (V = 3.0 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input offset voltage
Symbol
Test Condition
= 1 kΩ
Min
Typ.
Max
Unit
V
1
⎯
⎯
2
R
⎯
⎯
2
1
7
⎯
mV
pA
pA
V
IO
S
Input offset current
I
⎯
⎯
⎯
⎯
IO
Input bias current
I
⎯
1
⎯
I
Common mode input voltage
Voltage gain (open loop)
CMV
0.0
60
⎯
2.1
⎯
IN
G
V
⎯
3
70
⎯
dB
V
R
R
= 100 kΩ
= 100 kΩ
2.9
⎯
⎯
OH
L
Maximum output voltage
V
V
4
⎯
0.1
⎯
OL
L
Common mode rejection ratio
Supply voltage rejection ratio
Supply current
CMRR
SVRR
2
V
V
= 0.0~2.1 V
54
70
70
330
700
1250
dB
dB
μA
μA
μA
IN
DD
1
= 1.8~7.0 V
60
⎯
I
5
⎯
⎯
⎯
⎯
500
⎯
DD
Source current
I
6
330
600
source
Sink current
I
7
⎯
sink
DC Characteristics (V = 1.8 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Input offset voltage
Symbol
Test Condition
= 10 kΩ
Min
Typ.
Max
Unit
V
1
⎯
⎯
2
R
⎯
⎯
2
1
7
⎯
mV
pA
pA
V
IO
S
Input offset current
I
⎯
⎯
⎯
⎯
IO
Input bias current
I
⎯
1
⎯
I
Common mode input voltage
Voltage gain (open loop)
CMV
0.3
⎯
⎯
0.9
⎯
IN
G
V
⎯
3
70
⎯
dB
V
R
R
= 100 kΩ
= 100 kΩ
1.7
⎯
⎯
OH
L
maximum output voltage
V
V
4
⎯
0.1
⎯
OL
L
Common mode rejection ratio
Supply current
CMRR
2
V
= 0.3~0.9 V
50
60
300
600
1150
dB
μA
μA
μA
IN
I
5
⎯
⎯
450
⎯
DD
Source current
I
6
⎯
⎯
300
550
source
Sink current
I
7
⎯
sink
2
2007-11-01
TC75S60F/FU
AC Characteristics (V = 3.0 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Symbol
SR
Test Condition
Min
Typ.
Max
Unit
Slew rate
Unity gain cross frequency
⎯
⎯
⎯
⎯
⎯
⎯
5.1
3.7
⎯
⎯
V/μs
f
T
MHz
AC Characteristics (V = 1.8 V, V = GND, Ta = 25°C)
DD
SS
Test
Circuit
Characteristics
Symbol
SR
Test Condition
Min
Typ.
Max
Unit
Slew rate
⎯
⎯
⎯
⎯
⎯
⎯
4.0
3.0
⎯
⎯
V/μs
Unity gain cross frequency
f
T
MHz
Test Circuit
1. SVRR, V
IO
•
•
SVRR
V
DD
V
V
= 1.8 V: V
= 7.0 V: V
= V 1, V
DD
= V
= V
1
DD
DD
DD
DD
OUT
OUT
OUT
= V 2, V
2
OUT
DD
R
F
⎛
⎜
⎞
⎟
1−
2
R
V
V
OUT
OUT
S
SVRR = 20 log
×
⎜
⎝
⎟
⎠
1−
2
R
+ R
V
V
DD
R
R
F
S
DD
S
V
OUT
V
IO
S
⎛
⎞
R
V
DD
2
S
= ⎜
⎜
−
⎟ ×
⎟
V
V
OUT
IO
R
+ R
⎝
⎠
F
S
V
/2
DD
2. CMRR, CMV
IN
V
DD
•
•
CMRR
V
V
= 0.0 V: V = V 1, V
IN IN
= 2.1 V: V = V 2, V
= V
= V
1
2
IN
IN
OUT
OUT
OUT
R
IN
IN
OUT
F
⎛
⎞
1−
2
R
S
R + R
F S
V
V
V
⎜
OUT
V
OUT
⎟
⎟
⎠
CMRR = 20 log
×
R
R
S
⎜
⎝
1−
2
IN
IN
V
OUT
S
CMV
IN
V
IN
V
/2
DD
3
2007-11-01
TC75S60F/FU
3. V
OH
V
V
V
DD
DD
DD
•
V
OH
V
DD
2
=
=
− 0.05 V
+ 0.05 V
V
IN1
IN2
V
DD
2
V
V
OH
V
V
IN2
IN1
4. V
OL
•
V
OL
V
DD
2
=
=
+ 0.05 V
− 0.05 V
V
IN1
IN2
V
DD
2
V
OL
V
V
V
IN2
IN1
5. I
DD
M
I
DD
V
/2
DD
6. I
7.
I
sink
source
V
DD
V
DD
M
M
V
DD
2
V
DD
2
− 0.1V
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2007-11-01
TC75S60F/FU
I
– V
DD
I
– V
DD
sink
DD
500
250
0
2.0
Ta = 85°C
1.6
1.2
0.8
Ta = −40°C
Ta = −40°C
Ta = 25°C
Ta = 25°C
Ta = 85°C
0.4
0
V
V
= GND
SS
IN
V
= GND
SS
= V /2
DD
0
1
2
3
4
5
6
7
1.5
7
0
1
2
3
4
5
6
7
Supply voltage
V
(V)
Supply voltage
V
DD
(V)
DD
V
OL
– I
sink
V
– I
OL sink
2.0
1.6
1.2
0.8
0.4
0
3
2
1
0
Ta = 85°C
Ta = 85°C
Ta = 25°C
Ta = 25°C
Ta = −40°C
Ta = −40°C
V
= 1.8 V
= GND
DD
SS
V
V
= 3 V
DD
SS
V
= GND
0
0.5
1.0
1.5
0
0.5
1.0
Sink current
I
(mA)
Sink current
I
(mA)
sink
sink
V
OL
– I
sink
I
– V
source DD
5
4
3
2
1
0
1.5
1.0
0.5
0
V
V
= 5 V
DD
SS
= GND
Ta = 85°C
Ta = 85°C
Ta = 25°C
Ta = −40°C
Ta = 25°C
Ta = −40°C
V
= GND
SS
0
0.5
1.0
1.5
0
1
2
3
4
5
6
Sink current
I
(mA)
Supply voltage
V
DD
(V)
sink
5
2007-11-01
TC75S60F/FU
V
OH
– I
source
V
– I
OH source
2.0
1.6
1.2
0.8
0.4
0
3
2.5
Ta = −40°C
Ta = 25°C
Ta = 85°C
Ta = −40°C
Ta = 25°C
Ta = 85°C
V
= 1.8 V
= GND
DD
V
V
= 3 V
DD
SS
V
SS
= GND
0
0
0
0.5
1
0.5
1
Source current
I
(mA)
Source current
I
(mA)
source
source
V
OH
– I
source
V – R
OH L
5
2.5
0
2
Ta = −40°C
Ta = 25°C
Ta = 85°C
1
Ta = 85°C
Ta = −40°C
Ta = 25°C
V
V
= 5 V
V
V
= 1.8 V
= GND
DD
SS
DD
SS
= GND
0
100
0
0.5
1
1 k
10 k
100 k
1 M
Source current
I
(mA)
Load resistance
R
L
(Ω)
source
V
OH
– R
V – R
OH L
L
3
5
2.5
Ta = 85°C
Ta = 85°C
Ta = −40°C
Ta = 25°C
Ta = −40°C
Ta = 25°C
2.5
V
V
= 5 V
DD
SS
V
V
= 3 V
DD
SS
= GND
= GND
0
100
0
100
1 k
10 k
100 k
1 M
1 k
10 k
100 k
1 M
Load resistance
R
L
(Ω)
Load resistance
R
L
(Ω)
6
2007-11-01
TC75S60F/FU
Pulse response (rise)
Pulse response (fall)
1.1
0.9
0.7
0.5
0.3
1.1
0.9
0.7
0.5
0.3
Input waveform
Ta = 85°C
Output waveform
Ta = −40°C
Ta = −40°C
Ta = 25°C
Ta = 25°C
Output waveform
Input waveform
Ta = 85°C
0.1
0
0.1
0
V
V
= 1.8 V
= GND
V
V
= 1.8 V
= GND
DD
SS
DD
SS
0
0
0
100
200
t
300
400
0
0
0
100
200
300
400
Time
(ns)
Time t (ns)
Pulse response (rise)
Pulse response (fall)
3
2
1
0
3
2
1
0
V
V
= 3 V
DD
SS
= GND
Input waveform
Ta = 85°C
Ta = −40°C
Ta = 25°C
Output waveform
Ta = −40°C
Ta = 25°C
Ta = 85°C
Output waveform
V
V
= 3 V
DD
SS
Input waveform
200
= GND
200
400
t
600
800
400
t
600
800
Time
(ns)
Time
(ns)
Pulse response (rise)
Pulse response (fall)
6
4
2
0
6
4
2
0
V
V
= 5 V
DD
SS
= GND
Input waveform
Ta = 85°C
Ta = −40°C
Ta = 25°C
Output waveform
Ta = −40°C
Ta = 25°C
Output waveform
Ta = 85°C
V
V
= 5 V
DD
SS
Input waveform
0.4
= GND
0.4
0.8
t
1.2
1.6
0.8
1.2
1.6
Time
(μs)
Time t (μs)
7
2007-11-01
TC75S60F/FU
G
V
– f
P – Ta
D
120
80
40
0
300
200
100
0
When the IC is mounted on a PCB, the
power dissipation may be higher than the
values shown below.
V
V
= 3 V
DD
SS
= GND
Ta = 25°C
Power dissipation varies according to the
PCB.
10
100
1 k
10 k
100 k
(Hz)
1 M
10 M
−40
0
40
80
120
Frequency
f
Ambient temperature Ta (°C)
8
2007-11-01
TC75S60F/FU
Package Dimensions
Weight: 0.014 g (typ.)
9
2007-11-01
TC75S60F/FU
Package Dimensions
Weight: 0.006 g (typ.)
10
2007-11-01
TC75S60F/FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
11
2007-11-01
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