SSM6K209FE [TOSHIBA]
High-Speed Switching Applications; 高速开关应用
| 型号： | SSM6K209FE |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications |
| 文件： | 总6页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6K209FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K209FE
○High-Speed Switching Applications
○Power Management Switch Applications
UNIT: mm
1.6±0.05
•
•
4.0V drive
Low ON-resistance: R = 145mΩ (max) (@V
= 4.0 V)
= 10 V)
1.2±0.05
on
GS
R
on
=
74mΩ (max) (@V
GS
1
2
3
6
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain–source voltage
Symbol
Rating
Unit
5
4
V
V
30
± 20
2.5
V
V
DSS
Gate–source voltage
GSS
DC
I
D
Drain current
A
Pulse
I
5.0
DP
P
(Note 1)
Drain power dissipation
Channel temperature
Storage temperature
500
mW
°C
D
T
ch
150
T
stg
−55~150
°C
1, 2, 5, 6 : Drain
3
4
: Gate
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
: Source
ES6
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
I
= 1 mA, V
= 1 mA, V
= 0 V
30
15
⎯
⎯
1.2
2.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain–source breakdown voltage
V
V
= –20 V
Drain cutoff current
I
V
V
V
V
= 30 V, V
= 0 V
⎯
1
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 16 V, V
= 0 V
⎯
±1
2.6
⎯
GSS
DS
V
= 5 V, I = 1 mA
⎯
th
D
⏐Y ⏐
= 5 V, I = 1.5 A
(Note2)
(Note2)
(Note2)
5.3
54
S
fs
D
I
I
= 1.5 A, V
= 10 V
= 4.0 V
74
145
⎯
D
D
GS
GS
Drain–source ON-resistance
R
mΩ
DS (ON)
= 1.0 A, V
85
Input capacitance
C
C
320
55
iss
V
= 15 V, V
= 0 V, f = 1 MHz
GS
pF
Output capacitance
Reverse transfer capacitance
Total Gate Charge
⎯
DS
oss
C
44
⎯
rss
Qg
7.7
6.0
1.7
17
⎯
V
V
= 15V, I = 2.5 A
D
DS
GS
nC
Gate−Source Charge
Gate−Drain Charge
Qgs
Qgd
⎯
= 10 V
⎯
Turn-on time
Switching time
t
t
V
V
= 15 V, I = 1.0 A,
⎯
on
DD
GS
D
ns
V
= 0~4.0 V, R = 10 Ω
Turn-off time
12
⎯
G
off
Drain–source forward voltage
Note 2: Pulse test
V
I
= –2.5 A, V = 0 V
GS
(Note2)
-0.9
–1.2
DSF
D
1
2007-11-01
SSM6K209FE
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
4.0 V
0 V
90%
V
= 15 V
= 10 Ω
DD
4.0 V
0
OUT
R
G
10%
IN
<
D.U. 1%
V
: t , t < 5 ns
IN
r
f
V
DD
Common Source
90%
10%
OUT
10 μs
Ta = 25°C
V
DD
V
DS (ON)
t
t
f
r
t
t
off
on
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
NW
1
2
3
1
2
3
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for
D
this product. For normal switching operation, V
voltage than V (The relationship can be established as follows: V
th.
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th
)
GS (on).
< V < V
GS (off)
th
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and
containers and other objects that come into direct contact with devices should be made of antistatic
materials.
2
2007-11-01
SSM6K209FE
I
– V
I – V
D GS
D
DS
5
10
1
5.0 V
10 V
4.0V
Common Source
Ta = 25 °C
Common Source
= 5 V
V
DS
4
3
2
1
0
0.1
3.0 V
Ta = 100 °C
25 °C
0.01
− 25 °C
0.001
VGS = 2.5 V
0.0001
0
0.2
0.4
0.6
0.8
1
0
2.0
4.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
300
300
200
Common Source
I
=1.5A
D
Ta = 25°C
Common Source
200
100
Ta = 100 °C
100
4.0V
25 °C
VGS = 10 V
1
− 25 °C
0
0
0
5
10
15
20
0
2
3
4
5
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
300
200
3.0
Common Source
= 5V
Common Source
V
DS
I
= 1 mA
D
2.0
1.0
0
1.0 A / 4.0V
100
I
= 1.5 A / V
= 10 V
GS
D
0
−50
−50
0
50
100
150
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
3
2007-11-01
SSM6K209FE
I
– V
DS
DR
|Y | – I
fs
D
10
10
1
Common Source
Common Source
= 5 V
V
= 0 V
GS
V
DS
D
Ta = 25°C
3
1
I
G
DR
S
0.1
Ta =100 °C
25 °C
0.3
0.1
0.01
−25 °C
0.001
1
0.1
10
0
–0.5
–1.0
–1.5
0.01
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
t – I
D
C – V
DS
1000
100
1000
Common Source
V
V
= 15 V
DD
GS
t
f
500
300
= 0 ∼ 4.0 V
off
Ta = 25 °C
= 10 Ω
C
iss
t
t
R
G
100
on
50
30
10
C
oss
C
t
r
rss
Common Source
Ta = 25°C
f = 1 MHz
V
= 0 V
GS
10
0.1
1
0.01
1
10
100
0.1
1
10
Drain–source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
10
8
Common Source
= 2.5A
I
D
Ta = 25°C
6
VDS=15V
VDS=24V
4
2
0
0
2
4
6
8
10
Total Gate Charge Qg (nC)
4
2007-11-01
SSM6K209FE
r
th
– t
w
P
– T
a
D
1000
100
10
1000
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
Single Pulse
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
800
600
400
200
0
1
-40 -20
0
20
40
60 80
100
140 160
120
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
Ambient temperature Ta (°C)
w
5
2007-11-01
SSM6K209FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
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