SSM6K22FE [TOSHIBA]
High Current Switching Applications; 大电流开关应用
| 型号： | SSM6K22FE |
| 厂家： | 
TOSHIBA |
| 描述： | High Current Switching Applications |
| 文件： | 总6页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE
High Current Switching Applications
Unit: mm
DC-DC Converter
•
•
Suitable for high-density mounting due to compact package
Low on resistance:
R
R
= 170 mΩ (max) (@V
= 230 mΩ (max) (@V
= 4.0 V)
= 2.5 V)
on
GS
on
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
20
±12
1.4
5.6
500
V
V
DS
1,2,5,6 : Drain
Gate-Source voltage
V
GSS
3
: Gate
DC
I
4
: Source
D
Drain current
A
Pulse
I
DP
P
D
Drain power dissipation
Channel temperature
mW
(Note 1)
JEDEC
JEITA
-
T
ch
150
°C
°C
-
Storage temperature range
T
stg
−55~150
TOSHIBA
2-2N1A
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 3 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
2
Marking
Equivalent Circuit (Top View)
6
5
KD
2
4
6
5
4
1
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM6K22FE
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
−
20
12
−
−
−
I
V
= ±12 V, V = 0
±1
−
μA
GSS
GS
DS
V
V
I
I
= 1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
V
−
−
= 1 mA, V
= -12 V
= 0
−
Drain cut-off current
I
V
V
V
=20 V, V
1
μA
V
DSS
DS
DS
DS
GS
−
Gate threshold voltage
Forward transfer admittance
V
= 3 V, I = 0.1 mA
0.4
1.4
−
1.1
−
th
D
⏐Y ⏐
= 3 V, I = 0.6A
(注 2)
(注 2)
2.8
150
190
125
17
42
15.5
8.5
S
fs
D
I
I
= 0.7 A, V
= 4 V
170
230
−
D
D
GS
GS
Drain-Source on-resistance
R
mΩ
DS (ON)
−
= 0.7 A, V
= 2.5 V (注 2)
−
Input capacitance
C
V
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
−
−
Reverse transfer capacitance
Output capacitance
C
−
−
C
t
Turn-on time
Switching time
= 10 V, I = 0.7 A
−
−
D
ns
VGS = 0~2.5 V, RG = 4.7 Ω
−
−
Turn-off time
t
off
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
2.5 V
0 V
90%
2.5 V
OUT
IN
10%
0
V
10 μs
DD
90%
10%
(c) V
OUT
V
DD
V
DS (ON)
t
t
f
r
V
= 10 V
DD
R
= 4.7 Ω
G
t
t
off
on
<
D.U. 1%
V
: t , t < 5 ns
IN
r
f
Common Source
Ta = 25°C
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I =
D
-1mA for this product. For normal switching operation, V
requires a higher voltage than V and V
th GS (off)
GS (on)
requires a lower voltage than V . (The relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on).
Be sure to take this into consideration when using the device.
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SSM6K22FE
ID - VGS
ID - VDS
2.5
2.0
1.5
1.0
0.5
0.0
10000
1000
100
10
Common Source
VDS=3V
4.0V
Common Source
Ta=25℃
2.5V
2.0V
Ta=85℃
25℃
VGS=1.8V
1
-25℃
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
1
2
3
4
Gate-Source voltage
V
(V)
GS
Drain-Source voltage
V
(V)
DS
RDS(ON) - VGS
RDS(ON) - ID
0.5
500
Common Source
Ta=25℃
Common Source
ID=0.7A
0.4
0.3
0.2
0.1
0
400
300
200
100
0
25℃
2.5V
Ta=85℃
VGS=4.0V
-25℃
0
0.5
1
1.5
2
2.5
0
2
4
6
8
Drain current I (A)
D
Gate-Source voltage
V
(V)
GS
Vth - Ta
RDS(ON) - Ta
2
0.5
0.4
0.3
0.2
0.1
0
Common Source
ID=0.1mA
Common Source
ID=0.7A
1.8
1.6
1.4
1.2
1
VDS=3V
2.5V
0.8
0.6
0.4
0.2
0
4.0V
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Ambient temperture Ta (℃)
Ambient temperture Ta (℃)
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SSM6K22FE
|Yfs| - ID
C - VDS
100
10
1000
100
10
Common Source
VDS=-3V
Ta=25℃
C
iss
C
oss
1
C
rss
0.1
Common Source
VGS=0V
f=1MHz
Ta=25℃
1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
Drain-Source voltage
V
(V)
Drain current
I
(A)
DS
D
IDR - VDS
t - ID
2.5
2
1000
Common Source
Common Source
VGS=0
V
V
DD=10V
GS=0～2.5V
toff
Ta=25℃
Ta=25℃
100
10
1
tf
ton
1.5
1
tr
0.5
0
0.1
0
-0.2
-0.4
-0.6
-0.8
-1
0.01
0.1
1
10
Drain-Source voltage
V
(V)
DS
Drain current
I
(A)
D
Dynamic Input Characteristic
10
8
Common Source
VDD=10V
D=1.4A
I
Ta=25℃
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Tatal gate charge
Q
(nC)
g
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SSM6K22FE
Safe operating area
10
I
max (Pulsed) *
D
1ms
1
10ms
I
max
D
(Continuous)
100ms
DC operation
Ta=25℃
0.1
Mounted on FR4 board
・
・
1.6 t
(25.4 mm
25.4 mm
Cu pad: 645 mm2 )
*:Single nonrepetive Pulse
0.01
・
Ta
25°C
Curves must be derated linealy
with increase in temperture.
0.001
0.1
1
10
(V)
100
Drain-Source voltage
V
DS
PD - Ta
600
500
400
300
200
100
0
FR4基板実装時
(25.4mm×25.4mm×1.6t)
Cu pad：645mm2
0
20
40
60
80
100
120
140
Ambient temperature Ta (℃)
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2007-11-01
SSM6K22FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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