SSM6K18TU [TOSHIBA]
High Current Switching Applications; 大电流开关应用
| 型号： | SSM6K18TU |
| 厂家： | 
TOSHIBA |
| 描述： | High Current Switching Applications |
| 文件： | 总6页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6K18TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K18TU
High Current Switching Applications
Unit: mm
•
•
Suitable for high-density mounting due to compact package
Low on resistance:
R
on
= 54 mΩ (max) (@V
= 2.5 V)
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
20
±12
4
V
V
DS
Gate-Source voltage
V
GSS
1,2,5,6 : Drain
DC
I
D
3
4
: Gate
: Source
Drain current
A
Pulse
I
8
DP
P
D
Drain power dissipation
Channel temperature
500
mW
(Note 1)
T
ch
150
°C
°C
Storage temperature range
T
stg
−55~150
JEDEC
JEITA
⎯
⎯
⎯
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
Weight: 7 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit (Top View)
6
5
KNA
2
4
6
5
4
1
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
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2007-11-01
SSM6K18TU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±12 V, V = 0
Min
Typ.
Max
Unit
I
V
⎯
20
12
⎯
0.5
5.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±1
⎯
⎯
1
μA
GSS
GS
DS
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
V
= −12 V
⎯
Drain cut-off current
I
V
V
V
= 20 V, V
= 0
⎯
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
Forward transfer admittance
V
= 3 V, I = 0.1 mA
⎯
1.1
⎯
40
54
⎯
⎯
⎯
⎯
⎯
th
D
⏐Y ⏐
= 3 V, I = 2 A
(Note2)
(Note2)
(Note2)
⎯
S
fs
D
I
I
= 2 A, V
= 4 V
34
D
D
GS
GS
Drain-Source ON resistance
R
mΩ
DS (ON)
= 2 A, V
= 2.5 V
41
Input capacitance
C
V
V
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0, f = 1 MHz
1100
160
185
43
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
= 0, f = 1 MHz
= 0, f = 1 MHz
C
t
Turn-on time
Switching time
= 10 V, I = 2 A,
D
ns
= 0~2.5 V, R = 4.7 Ω
Turn-off time
t
50
G
off
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
2.5 V
90%
OUT
2.5 V
IN
10%
0 V
0
V
DD
(c) V
OUT
10 μs
90%
10%
V
DD
V
= 10 V
DD
V
DS (ON)
R
= 4.7 Ω
t
f
t
G
r
<
D.U. 1%
t
t
off
V
: t , t < 5 ns
on
IN
r
f
Common Source
Ta = 25°C
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = 100 μA for this
D
product. For normal switching operation, V
requires higher voltage than V and V
requires lower
GS (on)
th
GS (off)
voltage than V
th.
(Relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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2007-11-01
SSM6K18TU
I
– V
D
DS
I
– V
GS
D
2.5V
8
10000
1000
100
10
Common Source
Ta = 25°C
Common Source
4V
1.8V
V
= 3 V
DS
7
6
1.5V
Ta = 100°C
5
4
25°C
3
2
1
VGS=1.2V
−25°C
0.1
1
0
0
0.01
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
Gate-Source voltage
V
(V)
GS
Drain-Source voltage
V
DS
(V)
R
– V
GS
DS (ON)
R
– I
D
DS (ON)
200
150
100
50
100
80
60
40
20
0
= 2 A
ID
Common Source
Ta = 25°C
Common Source
2.5V
25°C
Ta = 100°C
4V
−25°C
0
0
2
4
6
8
10
12
0
2
4
6
8
Drain current
I
(A)
D
Gate-Source voltage
V
(V)
GS
R
– Ta
DS (ON)
V
– Ta
th
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0
Common Source
= 3V
Common Source
= 2A
V
I
DS
D
I
= 0.1 mA
D
2.5 V
V
= 4 V
GS
−50
0
50
100
150
−25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM6K18TU
|Y | – I
fs
D
C – V
DS
5000
3000
30
10
C
iss
1000
3
500
300
1
C
oss
C
rss
0.3
0.1
0.03
0.01
100
50
30
Common Source
Ta = 25°C
Common Source
= 3V
V
DS
f = 1 MHz
Ta = 25°C
V
= 0 V
GS
10
0.1
1
10
100
1
10
100
1000
10000
Drain current
I
(mA)
Drain-Source voltage
V
DS
(V)
D
Dynamic Input Characteristic
Switching Time
1000
10
9
Common Source
V
V
= 10 V
DD
GS
= 0∼2.5V
8
Ta = 25°C
= 4.7 Ω
R
G
7
6
100
10
1
V
= 10V
DD
t
off
t
f
5
4
3
2
1
0
V
= 16 V
DD
t
on
t
r
Common Source
= 4 A
Ta = 25°C
I
D
0
10
20
30
35
0.01
0.1
1
10
Drain current
I
(A)
D
Total gate charge
Q
(nC)
g
I
– V
DS
DR
8
Common Source
= 0
V
GS
D
Ta = 25°C
6
4
2
0
I
DR
G
S
0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
Drain-Source voltage
V
DS
(V)
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2007-11-01
SSM6K18TU
r
th
– t
w
1000
100
10
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
10
P
– Ta
I
max (pulse) *
D
D
1.2
1
3
1
1 ms*
Mounted on FR4 board
10 ms*
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm
)
t = 10 s
I
max
10s*
D
0.8
0.6
(continuous)
0.3
0.1
DC operation
DC
Ta = 25°C
0.4
0.2
Mounted on FR4 board
0.03
0.01
(25.4 mm × 25.4 mm × 1.6 t
2
Cu pad: 645 mm
)
0
0
* Single Pulse Ta = 25°C
50
100
150
Curves must be derated
linearly with increase in
temperature.
0.003
0.001
Ambient temperature Ta (°C)
0.1
0.3
1
3
10
30
100
Drain-Source voltage
V
(V)
DS
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2007-11-01
SSM6K18TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
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