RN1113FS [TOSHIBA]
TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal;
| 型号： | RN1113FS |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1112FS,RN1113FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112FS,RN1113FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
•
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
1
2
Complementary to RN2112FS, RN2113FS
3
0.8±0.05
1.0±0.05
Equivalent Circuit and Bias Resistor Values
0.1±0.05
0.1±0.05
1.BASE
2.EMITTER
fSM
3.COLLECOTR
JEDEC
JEITA
―
―
―
Maximum Ratings
(Ta = 25°C)
TOSHIBA
Characteristics
Symbol
Rating
Unit
Weight:0.0006mg (typ.)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
20
20
V
V
CBO
CEO
EBO
5
V
I
50
mA
mW
°C
°C
C
Collector power dissipation
Junction temperature
P
50
C
T
j
150
−55~150
Storage temperature range
T
stg
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
I
V
V
V
= 20 V, I = 0
⎯
⎯
⎯
⎯
100
100
⎯
nA
nA
CBO
CB
EB
CE
E
Emitter cut-off current
= 5 V, I = 0
C
EBO
DC current gain
h
= 5 V, I = 1 mA
300
⎯
⎯
FE
CE (sat)
C
Collector-emitter saturation voltage
Collector output capacitance
V
I
= 5 mA, I = 0.25 mA
⎯
0.15
⎯
V
C
B
C
ob
V
= 10 V, I = 0, f = 1 MHz
⎯
1.2
22
47
pF
CB
E
RN1112FS
Input resistor
17.6
37.6
26.4
56.4
R1
⎯
kΩ
RN1113FS
1
2004-03-01
RN1112FS,RN1113FS
RN1112FS
IC - VI(ON)
RN1112FS
IC - VI(OFF)
100
10
10000
1000
100
Ta=100°C
Ta=100°C
-25
25
25
1
-25
EMITTER COMMON
VCE=0.2V
EMITTER COMMON
VCE=5V
0.1
10
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN1113FS
IC - VI(ON)
RN1113FS
IC - VI(OFF)
100
10
1
10000
1000
100
Ta=100°C
Ta=100°C
-25
25
-25
25
EMITTER COMMON
VCE=0.2V
EMITTER COMMON
VCE=5V
0.1
10
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT ON VOLTAGE VI(ON) (V)
INPUT ON VOLTAGE VI(OFF) (V)
2
2004-03-01
RN1112FS,RN1113FS
RN1112FS
hFE - IC
RN1112FS
VCE(sat) - IC
1000
100
10
1000
100
10
Ta=100°C
25
Ta=100°C
-25
25
EMITTER COMMON
VCE=5V
-25
EMITTER COMMON
IC / IB=20
1
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
hFE - IC
RN1113FS
RN1113FS
VCE(sat) - IC
1000
100
10
1000
100
10
Ta=100°C
25
-25
Ta=100°C
-25
25
EMITTER COMMON
VCE=5V
EMITTER COMMON
IC / IB=20
1
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
3
2004-03-01
RN1112FS,RN1113FS
Type Name
RN1112FS
Marking
Type Name
LH
Type Name
RN1113FS
LJ
HANDLING PRECAUTION
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
4
2004-03-01
RN1112FS,RN1113FS
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-03-01
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