RN1114_07 [TOSHIBA]
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 开关，逆变电路，接口电路及驱动电路的应用
| 型号： | RN1114_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 文件： | 总8页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114, RN1115, RN1116, RN1117, RN1118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2114~2118
Equivalent Circuit and Bias Resistor Values
Type No.
R (kΩ)
1
R (kΩ)
2
RN1114
RN1115
RN1116
RN1117
RN1118
1
10
10
10
4.7
10
2.2
4.7
10
47
JEDEC
―
―
EIAJ
TOSHIBA
Weight: 2.4mg
2-2H1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
V
50
50
V
V
CBO
CEO
RN1114~1118
Collector-emitter voltage
RN1114
RN1115
RN1116
RN1117
RN1118
5
6
Emitter-base voltage
V
7
V
EBO
15
25
Collector current
I
100
100
150
−55~150
mA
mW
°C
c
Collector power dissipation
Junction temperature
Storage temperature range
P
c
RN1114~1118
T
j
T
stg
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN1114~RN1118
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
RN1114~1118
RN1114~1118
RN1114
I
I
―
―
―
―
―
―
―
―
―
―
V
V
V
V
V
V
V
―
―
―
―
―
―
―
―
―
―
―
100
500
0.65
0.71
0.68
1.46
0.63
―
nA
nA
CBO
CEO
CB
CE
EB
EB
EB
EB
EB
E
Collector cut-off current
= 50 V, I = 0
B
= 5 V, I = 0
0.35
0.37
0.36
0.78
0.33
50
C
RN1115
= 6 V, I = 0
C
Emitter cut-off current
DC current gain
I
mA
RN1116
= 7 V, I = 0
C
EBO
RN1117
= 15 V, I = 0
C
RN1118
= 25 V, I = 0
C
RN1114~16, 18
RN1117
h
V
= 5 V, I = 10 mA
―
FE
CE
C
30
―
Collector-emitter
saturation voltage
RN1114~1118
V
I
= 5 mA, I = 0.25 mA
C B
―
0.1
0.3
V
CE (sat)
RN1114
RN1115
―
―
―
―
―
―
―
―
―
―
―
―
0.6
0.7
0.8
1.5
2.5
0.3
0.3
0.3
0.3
0.5
―
―
―
―
―
―
―
―
―
―
―
250
2.0
2.5
2.5
3.5
10.0
0.9
1.0
1.1
2.3
5.7
―
Input voltage (ON)
V
V
= 0.2 V, I = 5 mA
V
RN1116
I (ON)
CE
C
RN1117
RN1118
RN1114
RN1115
Input voltage (OFF)
V
V
= 5 V, I = 0.1 mA
C
V
RN1116
I (OFF)
CE
RN1117
RN1118
Translation Frequency
RN1114~1118
f
V
V
= 10 V, I = 5 mA
MHz
pF
T
CE
CB
C
Collector output
capacitance
= 10 V, I = 0,
E
RN1114~1118
C
―
3.0
6.0
ob
f = 1 MHz
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114
RN1115
RN1116
RN1117
RN1118
―
―
―
―
―
―
―
―
―
―
0.7
1.54
3.29
7.0
32.9
―
1.0
2.2
1.3
2.86
6.11
13.0
61.1
―
Input Resistor
R
―
kΩ
4.7
1
10.0
47.0
0.1
―
0.22
0.47
2.13
4.7
―
Resistor Ratio
R /R
1
―
―
―
―
2
―
―
―
―
2
2007-11-01
RN1114~RN1118
IC - VI (ON)
IC - VI (ON)
RN1114
RN1115
100
10
1
100
10
1
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 0.2V
Ta = 100°C
Ta = 100°C
25
-25
25
-25
0.1
0.1
0.1
0.1
0.1
1
10
0.1
1
10
INPUT VOLTAGE VI (ON) (V)
INPUT VOLTAGE VI (ON) (V)
ꢀ
ꢀ
IC - VI (ON)
IC - VI (ON)
RN1116
RN1117
100
10
1
100
10
1
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 0.2V
Ta = 100°C
Ta = 100°C
25
25
-25
-25
0.1
0.1
1
10
0.1
1
10
100
INPUT VOLTAGE VI (ON) (V)
ꢀ
INPUT VOLTAGE VI (ON) (V)
ꢀ
IC - VI (ON)
RN1118
100
10
1
COMMON EMITTER
VCE = 0.2V
Ta = 100°C
25
-25
0.1
1
10
100
INPUT VOLTAGE VI (ON) (V)
ꢀ
3
2007-11-01
RN1114~RN1118
IC - VI (OFF)
IC - VI (OFF)
RN1114
RN1115
10000
1000
100
10000
1000
100
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
25
-25
Ta = 100°C
25
Ta = 100°C
-25
10
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.8
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI (OFF) (V)
INPUT VOLTAGE VI (OFF) (V)
ꢀ
ꢀ
IC - VI (OFF)
IC - VI (OFF)
RN1117
RN1116
10000
1000
100
10000
1000
100
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
Ta = 100°C
25
Ta = 100°C
25
-25
-25
10
10
0.8
1.2
1.6
2
2.4
2.8
3.2
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE VI (OFF) (V)
ꢀ
INPUT VOLTAGE VI (OFF) (V)
ꢀ
IC - VI (OFF)
RN1118
10000
1000
100
COMMON EMITTER
VCE = 5V
Ta = 100°C
25
-25
10
1
2
3
4
5
INPUT VOLTAGE VI (OFF) (V)
ꢀ
4
2007-11-01
RN1114~RN1118
hFE - IC
hFE - IC
RN1115
RN1114
1000
1000
100
10
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
Ta = 100°C
Ta = 100°C
100
25
25
-25
-25
10
1
10
100
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
hFE - IC
hFE - IC
RN1116
RN1117
1000
1000
100
10
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
Ta = 100°C
-25
Ta = 100°C
100
25
25
-25
10
1
1
10
100
1
10
COLLECTOR CURRENT IC (mA)
100
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
hFE - IC
RN1118
1000
COMMON EMITTER
VCE = 5V
Ta = 100°C
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
ꢀ
5
2007-11-01
RN1114~RN1118
VCE(sat) - IC
VCE(sat) - IC
RN1114
RN1115
1
1
COMMON EMITTER
IC / IB = 20
COMMON EMITTER
IC / IB = 20
Ta = 100°C
Ta = 100°C
0.1
0.1
-25
-25
25
25
0.01
0.01
1
10
100
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
VCE(sat) - IC
VCE(sat) - IC
RN1117
RN1116
1
1
COMMON EMITTER
IC / IB = 20
COMMON EMITTER
IC / IB = 20
Ta = 100°C
Ta = 100°C
0.1
0.1
-25
25
-25
25
0.01
0.01
1
10
100
1
10
COLLECTOR CURRENT IC (mA)
100
COLLECTOR CURRENT IC (mA)
ꢀ
ꢀ
VCE(sat) - IC
RN1118
1
COMMON EMITTER
IC / IB = 20
Ta = 100°C
0.1
-25
25
0.01
1
10
COLLECTOR CURRENT IC (mA)
100
ꢀ
6
2007-11-01
RN1114~RN1118
Type Name
RN1114
Marking
RN1115
RN1116
RN1117
RN1118
7
2007-11-01
RN1114~RN1118
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-11-01
相关型号：
RN1115(TE85L)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1115(TE85R)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1115F
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1115FT
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1115FV
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
RN1115MFV
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明