JDV2S27FS [TOSHIBA]
DIODE UHF BAND, 8.31 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, FSC, 1-1L1A, 2 PIN, Variable Capacitance Diode;
| 型号： | JDV2S27FS |
| 厂家： | 
TOSHIBA |
| 描述： | DIODE UHF BAND, 8.31 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, FSC, 1-1L1A, 2 PIN, Variable Capacitance Diode 光电二极管 |
| 文件： | 总3页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JDV2S27FS
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S27FS
VCO for UHF Band Radio
Unit: mm
•
•
•
•
High capacitance ratio: C /C =2.9 (typ.)
1V 4V
0.6±0.05
Low series resistance: r = 0.49 Ω (typ.)
s
A
This device is suitable for use in small tuners.
Lead (Pb)-free.
Maximum Ratings
=
(Ta 25°C)
0.2
±0.05
0.1±0.05
M
0.07
A
Characteristic
Symbol
Rating
Unit
Reverse voltage
V
10
150
V
R
+0.02
-0.03
0.48
Junction temperature
T
°C
°C
j
Storage temperature range
T
stg
−55~150
fSC
JEDEC
JEITA
―
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics
=
(Ta 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
Reverse current
V
I
= 1 µA
R
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
R
I
C
C
V
V
V
= 5 V
1
nA
R
R
R
R
8.06
2.79
2.79
8.56
2.98
2.98
0.64
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
⎯
1V
4V
Capacitance
pF
Capacitance ratio
Series resistance
C
/C
1V 4V
⎯
Ω
r
s
V
= 1 V, f = 470 MHz
⎯
0.49
R
Note: Signal level when capacitance is measured. V = 100mVrms
sig
Marking
1
2005-11-07
JDV2S27FS
C
V
– V
r – V
s R
R
1.0
0.8
0.6
0.4
0.2
0.0
100
10
1
f=470MHz
Ta=25℃
f=1MHz
Ta=25℃
0
1
2
3
4
5
6
7
0.1
1
REVERSE VOLTAGE
10
REVERSE VOLTAGE
V
R
(V)
V
R
(V)
2
2005-11-07
JDV2S27FS
3
2005-11-07
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