JDV2S27SC [TOSHIBA]
DIODE UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, SC2, 1-1R1A, 2 PIN, Variable Capacitance Diode;
| 型号： | JDV2S27SC |
| 厂家： | 
TOSHIBA |
| 描述： | DIODE UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, SC2, 1-1R1A, 2 PIN, Variable Capacitance Diode 二极管 |
| 文件： | 总3页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JDV2S27SC
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S27SC
VCO for UHF Band Radio
Unit: mm
•
•
•
High Capacitance Ratio : C /C = 2.9 (typ.)
1V 4V
Low Series Resistance : r = 0.48 ohm (typ.)
s
２
A two-terminal ultra-small package supports high-density mounting
and the downsizing of end products.
•
Lead (Pb)-free.
１
0.27±0.02
0.025±0.0
0.32±0.03
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
V
10
150
V
R
Junction temperature
T
°C
°C
j
Storage temperature range
T
stg
-55~150
1.Anode
2.Cathode
SC2
JEDEC
JEITA
⎯
⎯
TOSHIBA
1-1R1A
Weight: 0.00017 g (typ.)
]
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
Reverse current
V
I
= 1 µA
R
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
V
R
I
C
C
V
V
V
= 5 V
nA
R
R
R
R
8
8.5
2.93
3
= 1 V, f = 1 MHz
= 4V, f = 1 MHz
⎯
1V
4V
Capacitance
pF
2.75
2.81
Capacitance ratio
Series resistance
C
/C
1V 4V
⎯
Ω
r
s
V
= 1 V, f = 470 MHz
⎯
0.48
0.63
R
Note: Signal level when capacitance is measured: V = 100 mVrms
sig
Marking
2
1
1
2005-11-07
JDV2S27SC
C
V
– V
r – V
s R
R
1.0
0.8
0.6
0.4
0.2
0.0
100
10
1
f=470MHz
Ta=25℃
f=1MHz
Ta=25℃
0
1
2
3
4
5
6
7
0.1
1
REVERSE VOLTAGE
10
REVERSE VOLTAGE
V
R
(V)
V
R
(V)
2
2005-11-07
JDV2S27SC
3
2005-11-07
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