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元器件品牌
GT30J121
[TOSHIBA]
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT; 东芝绝缘栅双极晶体管硅N沟道IGBT
元器件型号：
GT30J121
生产厂家：
TOSHIBA SEMICONDUCTOR
描述和应用：
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
东芝绝缘栅双极晶体管硅N沟道IGBT
晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件：
总6页 (文件大小：297K)
下载文档：
下载PDF数据表文档文件
型号参数：GT30J121参数
查看货源
GT30J121_06
Silicon N Channel IGBT High Power Switching Applications
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TOSHIBA
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
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273
TOSHIBA
GT30J122A
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
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TOSHIBA
GT30J126
High Power Switching Applications Fast Switching Applications
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156
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46
TOSHIBA
GT30J301
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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180
TOSHIBA
GT30J311
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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46
TOSHIBA
GT30J322
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
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453
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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88
TOSHIBA
GT30J324
Silicon N Channel IGBT High Power Switching Applications
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29
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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38
TOSHIBA
GT30J324(Q)
IGBT DUAL 600V 30A TO-3PN
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156
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0
TOSHIBA
GT30J324_06
Silicon N Channel IGBT High Power Switching Applications
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18
TOSHIBA
GT30J341
Discrete IGBTs Silicon N-Channel IGBT
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31
TOSHIBA
GT30J341,Q
Insulated Gate Bipolar Transistor
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156
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0
TOSHIBA
GT3-16DP-2.5DSA
Antenna, Sensor, and Communications Trunk Line Connections
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44
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