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元器件品牌
GT30J301
[TOSHIBA]
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS); N沟道IGBT （大功率开关，马达控制应用）
元器件型号：
GT30J301
生产厂家：
TOSHIBA SEMICONDUCTOR
描述和应用：
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N沟道IGBT （大功率开关，马达控制应用）
开关 电动机控制 双极性晶体管 高功率电源
PDF文件：
总6页 (文件大小：328K)
下载文档：
下载PDF数据表文档文件
型号参数：GT30J301参数
查看货源
GT30J311
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TOSHIBA
GT30J322
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GT30J324
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156
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88
TOSHIBA
GT30J324
Silicon N Channel IGBT High Power Switching Applications
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TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA
GT30J324(Q)
IGBT DUAL 600V 30A TO-3PN
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156
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0
TOSHIBA
GT30J324_06
Silicon N Channel IGBT High Power Switching Applications
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156
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18
TOSHIBA
GT30J341
Discrete IGBTs Silicon N-Channel IGBT
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156
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31
TOSHIBA
GT30J341,Q
Insulated Gate Bipolar Transistor
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156
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0
TOSHIBA
GT3-16DP-2.5DSA
Antenna, Sensor, and Communications Trunk Line Connections
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44
HRS
GT3-16DP-2.5DSA(70)
Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Terminal, Locking, Black Insulator
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0
HRS
GT3-16DP-2.5DSA(70)
Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Terminal, Locking, Black Insulator
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: Undefined variable $rtag in
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156
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0
HRS
GT320
Ceramic Capacitor, Multilayer, Ceramic, 3000V, 5% +Tol, 5% -Tol, SL, 500ppm/Cel TC, 0.0002uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
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156
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0
CDE
GT3200
USB2.0 PJY IC
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156
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114
SMSC
GT3200
USB2.0 PHY IC
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SMSC
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