6N138-X009 [TOSHIBA]
High Speed Optocoupler, 100 kBd, Low Input Current, Photodiode Darlington Output; 高速光耦， 100 kBd的，低输入电流，光电二极管达林顿输出
| 型号： | 6N138-X009 |
| 厂家： | 
TOSHIBA |
| 描述： | High Speed Optocoupler, 100 kBd, Low Input Current, Photodiode Darlington Output |
| 文件： | 总6页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6N138,6N139
TOSHIBA Photocoupler GaAℓAs Ired & Photo IC
6N138, 6N139
Unit in mm
Current Loop Driver.
Low Input Current Line Receiver.
CMOS Logic Interface.
The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs
infrared
emitting diode coupled with a split-Darlington output
configuration.
A high speed GaAℓAs Ired manufactured with an unique
LPE junction, has the virtue of fast rise and fall time at
low drive current.
•
•
Isolation voltage: 2500Vrms (min.)
Current transfer ratio
: 6N138 − 300% (min.) (I =1.6mA)
F
: 6N139 − 400% (min.) (I =0.5mA)
F
•
•
Switching time: 6N138 − t
=10μs (max.)
=35μs (max.)
=1μs (max.)
=7μs (max.)
PHL
PLH
PHL
PLH
− t
6N139 − t
− t
TOSHIBA
11−10C4
Weight: 0.54 g
UL recognized: UL1577, file no. E67349
Pin Configuration (top view)
1 : N.C .
1
2
8
7
2 : A node
3 : C athode
4 : N.C .
5 : G nd
6 : O utput
7 : O utput B ase
6
5
3
4
8 : V
C C
Schematic
V
C C
8
I
F
2
3
I
C C
+
-
I
O
6
5
V
F
V
O
7
I
B
G N D
V
B
1
2007-10-01
6N138,6N139
Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
I
20
40
mA
mA
A
F
(*1)
Pulse forward current
Total pulse forward current
Reverse voltage
I
I
FP
FP
(*2)
1
V
P
5
V
R
Diode power dissipation
Output current
(Note 2)
(Note 3)
35
mW
mA
V
D
I
O
60
Emitter−base reverse voltage
Supply voltage
V
0.5
EB
(*3)
V
−0.5 to 18
−0.5 to 18
100
V
CC
(*3)
Output voltage
V
V
O
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s) (*4)
(Note 4)
P
mW
°C
°C
°C
O
T
opr
0 to 70
−55 to 125
260
T
stg
sol
T
2500
3540
V
rms
(**)
BV
S
Isolation voltage (1min., R.H.≤ 60%)
V
dc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) JEDEC registered data
(**) Not registered JEDEC
(*1) 50% duty cycle, 1ms pulse width
(*2) Pulse width 1μs, 300pps
(*3) 6N138… −0.5 to 7V
(*4) 1.6mm below seating plane
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2007-10-01
6N138,6N139
Electrical Characteristics
Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
400
(*5)Typ. Max.
Unit
%
I =0.5mA, V =0.4V
F
O
800
⎯
V
=4.5V
CC
6N139
6N138
Current transfer
ratio
CTR(*)
(Note 5, 6)
500
300
900
600
⎯
⎯
I =1.6mA, V =0.4V
F
O
V
=4.5V
CC
I =1.6mA, I =6.4mA
F
O
⎯
⎯
⎯
⎯
0.1
0.1
0.2
0.1
0.4
0.4
0.4
0.4
V
=4.5V
CC
I =5mA, I =15mA
F
O
=4.5V
6N139
V
CC
Logic low output
voltage
V
V
OL
(Note 6)
(Note 6)
I =12mA, I =24mA
F
O
V
=4.5V
CC
I =1.6mA, I =4.8mA
F
O
6N138
V
=4.5V
CC
6N139
6N138
I =0mA, V =V =18V
CC
⎯
⎯
0.05
0.05
100
250
F
O
Logic high output
current
I
(*)
OH
μA
I =0mA, V =V =7V
CC
F
O
Logic low supply current
Logic high supply current
Input forward voltage
I =1.6mA, V =Open
F O
I
⎯
0.2
⎯
mA
CCL
(Note 6)
(Note 6)
V
=5V
CC
I
I =0mA, V =Open, V =5V
CC
⎯
⎯
5
10
1.65
⎯
⎯
1.7
⎯
nA
V
CCH
F
O
V (*)
I =1.6mA, Ta=25°C
F
F
Input reverse breakdown
voltage
BV (*)
I =10μA, Ta=25°C
R
V
R
Temperature coefficient of
forward voltage
ΔV / ΔTa I =1.6mA
⎯
⎯
⎯
⎯
−1.9
60
⎯
⎯
⎯
⎯
mV / °C
F
F
Input capacitance
C
f=1MHz, V =0
pF
Ω
IN
F
V
=500V
(Note 7),
(Note 7)
Resistance (input−output)
Capacitance (input−output)
R
1012
0.6
I−O
I−O
I−O
R.H.≤ 60%
C
f=1MHz
pF
(**) JEDEC registered data.
(*5) All typicals at Ta=25°C and V =5V, unless otherwise noted.
CC
3
2007-10-01
6N138,6N139
Switching Specifications (Ta=25°C, V =5V, unless otherwise specified)
CC
Test
Characteristic
Symbol
Test Condition
I =0.5mA, R =4.7kΩ
Min.
Typ.
Max.
Unit
Circuit
1
⎯
⎯
⎯
⎯
⎯
⎯
5
0.2
1
25
1
F
L
Propagation delay
6N139
time to logic low
at output
t
t
(*)
μs
I =12mA, R =270Ω
pHL
F
L
(Note 6, 8)
6N138
6N139
6N138
I =1.6mA, R =2.2kΩ
10
60
7
F
L
I =0.5mA, R =4.7kΩ
5
F
L
Propagation delay
time to logic high
(*)
H
1
μs
I =12mA, R =270Ω
1
pLH
F
L
at output
(Note 6, 8)
I =1.6mA, R =2.2kΩ
4
35
F
L
Common mode transient
immunity at logic high
level output
I =0mA, R =2.2kΩ
F
L
CM
2
2
⎯
⎯
500
⎯
⎯
V / μs
V / μs
V
=400V
CM
p−p
(Note 9)
Common mode transient
immunity at logic low
level output
I =1.6mA
F
CM
R =2.2kΩ
−500
L
L
CM
(Note 9)
V
=400V
p−p
(*)JEDEC registered data.
(Note 1): Derate linearly above 50°C free−air temperature at a rate of 0.4mA / °C
(Note 2): Derate linearly above 50°C free−air temperature at a rate of 0.7mW / °C
(Note 3): Derate linearly above 25°C free−air temperature at a rate of 0.7mA / °C
(Note 4): Derate linearly above 25°C free−air temperature at a rate of 2.0mW / °C
(Note 5): DC CURRENT TRANSFER RATIO is defined as the ratio of output collector current, I , to the forward
O
LED input current, I , times 100%.
F
(Note 6): Pin 7 open.
(Note 7): Device considered a two−terminal device: Pins 1, 2, 3, and 4 shorted together and Pins 5, 6, 7 and 8
shorted together.
(Note 8): Use of a resistor between pin 5 and 7 will decrease gain and delay time.
(Note 9): Common mode transient immunity in logic high level is the maximum tolerable (positive) dv
/ dt on
CM
the leading edge of the common mode pulse, V , to assure that the output will remain in a logic high
CM
state (i.e., V > 2.0V).
O
Common mode transient immunity in Logic Low level is the maximum tolerable (negative) dv
/ dt on
CM
the trailing edge of the common mode pulse signal, V , to assure that the output will remain in a logic
CM
low state (i.e., V < 0.8V).
O
4
2007-10-01
6N138,6N139
Test Circuit 1.
IF
Pulse gen.
Zo = 50Ω
tf = 5ns
0
IF
1
2
3
8
7
6
5
+5V
5V
VO
RL
10% Duty cycle
1 / f < 100μs
(Saturated
1.5V
tpHL
VO
CL
1.5V
tpLH
Response)
VO
VOL
IF
(*)
MonitorF
4
5V
10%
90%
10%
(Non-
Saturated
90%
tr
tf
Response)
(*)C is approximately 15pF which includes probe
L
and stray wiring capacitance.
Test Circuit 2.
R
CC
1
2
3
8
7
6
5
+5V
VO
IF
tr, tf = 0.64μs
400V
90%
tr
VCM
10%
0V
tf
A
B
4
5V
VO
V
FF
Swith at A : IF = 0mA
VCM
+
－
VOL
VO
Pulse gen
Swith at B : IF = 1.6mA
5
2007-10-01
6N138,6N139
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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