2SK4108 [TOSHIBA]
Silicon N-Channel MOS Type Switching Regulator Applications; 硅N沟道MOS型开关稳压器的应用
| 型号： | 2SK4108 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Switching Regulator Applications |
| 文件： | 总6页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 0. 21Ω (typ.)
DS (ON)
: |Y | = 14 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 100 μA (max) (V
= 500 V)
DSS
DS
: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain−source voltage
Symbol
Rating
Unit
V
500
500
±30
20
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
Pulse (Note 1)
I
A
D
Drain current
I
80
A
DP
1. GATE
Drain power dissipation (Tc = 25°C)
P
150
W
D
AS
AR
2. DRAIN (HEAT SINK)
3. SOURCE
Single-pulse avalanche energy
E
960
mJ
(Note 2)
Avalanche current
I
20
15
A
JEDEC
JEITA
―
―
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
TOSHIBA
2-16C1B
Storage temperature range
T
−55~150
stg
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
0.833
50
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 4.08 mH, R = 25 Ω, I = 20 A
AR
V
DD
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2007-06-29
2SK4108
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
—
±30
—
—
—
±10
—
μA
V
GSS
GS
DS
Gate−source breakdown voltage
Drain cutoff current
V
V
I
= ±10 μA, V = 0 V
G DS
(BR) GSS
I
V
= 500 V, V
= 0 V
—
100
—
μA
V
DSS
DS
GS
Drain−source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
500
2.0
—
—
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
—
4.0
0.27
—
V
th
DS
GS
DS
D
Drain−source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 10 A
0.21
14
Ω
DS (ON)
|Y |
D
= 10 V, I = 10 A
4.0
—
S
fs
D
C
C
3400
25
—
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
320
—
oss
Rise time
t
—
—
—
70
130
70
—
—
—
r
I
= 10A
D
10 V
V
GS
出力
0 V
Turn on time
Switching time
t
on
R
= 20 Ω
L
ns
Fall time
t
f
∼
V
200 V
DD
<
Duty 1%, tw = 10 μs
Turn off time
t
—
—
280
70
—
—
off
Total gate charge (gate−source
plus gate−drain)
Q
g
V
≈ 400 V, V
= 10 V, I = 20 A
nC
DD
GS
D
Gate−source charge
Q
—
—
45
25
—
—
gs
Gate−drain (“Miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
—
Max
20
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
80
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 20 A, V
= 20 A, V
= 0 V
= 0 V
—
—
—
—
1300
20
−1.7
—
V
DSF
DR
DR
GS
GS
t
ns
μC
rr
dI
/ dt = 100 A / μs
DR
Q
—
rr
Marking
TOSHIBA
K4108
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2007-06-29
2SK4108
I
– V
D
DS
I
– V
D
DS
10
8
20
16
10
Common source
Tc = 25°C
Pulse Test
10
Common source
Tc = 25°C
Pulse Test
6
5.5
8
6
8
5.75
5.25
5
12
8
6
4
2
0
5.5
5.25
5
4
4.5
4.5
V
= 4V
GS
V
= 4 V
GS
0
0
1
2
3
4
5
0
0
1
10
20
30
40
50
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
20
50
40
30
20
Common source
Tc = 25°C
Pulse Test
Common source
= 20 V
V
DS
Pulse Test
16
12
8
25
I
= 20 A
D
4
10
5
100
4
Tc = −55°C
0
0
0
2
6
8
10
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y | – I
fs
R
– I
DS (ON) D
D
1.0
100
Common source
= 20 V
V
DS
Pulse Test
Tc = −55°C
100
10
25
Common source
Tc = 25°C
V
= 10 V
GS
Pulse Test
0.1
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2007-06-29
2SK4108
R
− Tc
I
− V
DR DS
DS (ON)
1.0
0.8
100
Common source
= 10 V
Pulse Test
Common source
Tc = 25°C
Pulse Test
V
GS
10
0.6
0.4
10
I
= 20A
D
5
10
1
5
0.2
0
3
1
V
= 0 V
GS
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
− Tc
th
DS
10000
5
Common source
= 10 V
V
I
DS
= 1mA
C
C
iss
D
Pulse Test
4
3
2
1
1000
oss
100
10
Common source
= 0 V
f = 1 MHz
Tc = 25°C
C
rss
V
GS
0
−80
0.1
1
10
100
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic input / output
characteristics
P
− Tc
D
200
150
500
20
V
DS
400
300
16
12
8
200V
V
= 100V
DD
100
50
0
400V
200
100
Common source
V
GS
I
= 20 A
D
4
Ta = 25°C
Pulse Test
0
120
0
0
0
40
80
120
160
200
20
40
60
80
100
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2007-06-29
2SK4108
SAFE OPERATING AREA
E
AS
– T
ch
1000
100
1000
800
600
400
I
max (pulse) *
D
100 μs *
I
max (continuous)
D
1 ms *
10
1
DC OPEATION
Tc = 25°C
200
0
※ Single pulse Ta=25℃
0.1
25
50
75
100
125
150
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
Channel temperature (initial)
T
(°C)
ch
0.01
1
10
100
1000
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
I
AR
−15 V
V
V
DS
DD
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 4.08 mH
B
VDSS
DD
5
2007-06-29
2SK4108
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-06-29
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