2SK4116LS [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备型号: | 2SK4116LS |
厂家: | SANYO SEMICON DEVICE |
描述: | N-Channel Silicon MOSFET General-Purpose Switching Device |
文件: | 总5页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0790
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4116LS
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•
Adoption of high reliability HVP process.
•
Attachment workability is good by Mica-less package.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
400
±30
12
DSS
Gate-to-Source Voltage
V
GSS
I
*1
Limited only by maximum temperature
SANYO’s ideal heat dissipation condition
PW≤10µs, duty cycle≤1%
A
Dc
Drain Current (DC)
I
*2
8.9
38
A
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
A
DP
2.0
33
W
W
°C
°C
mJ
A
P
D
Tc=25°C (SANYO’s ideal heat dissipation condition)
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *3
Avalanche Current *4
E
474
12
AS
I
AV
*1 Shows chip capability
*2 Package limited
*3 V =99V, L=5mH, I =12A
DD
AV
*4 L≤5mH, single pulse
Marking : K4116
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607QB TI IM TC-00000709 No. A0790-1/5
2SK4116LS
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
400
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
µA
nA
V
(BR)DSS
D GS
I
V
V
V
V
=320V, V =0V
GS
100
DSS
DS
GS
DS
DS
I
=±30V, V =0V
DS
±100
GSS
V
(off)
GS
=10V, I =1mA
3
5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
yfs
=10V, I =6A
2.8
5.5
S
D
R
DS
(on)
I
=6A, V =10V
0.41
650
150
34
0.54
Ω
D GS
Ciss
Coss
Crss
V
V
V
=30V, f=1MHz
=30V, f=1MHz
=30V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
18
Rise Time
t
r
65
Turn-OFF Delay Time
t (off)
d
71
Fall Time
t
36
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=200V, V =10V, I =12A
GS
24.5
4.5
16
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=200V, V =10V, I =12A
GS
D
=200V, V =10V, I =12A
GS
D
V
SD
I =12A, V =0V
GS
0.94
1.2
S
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
3.2
2.8
0.9
1.2
1.2
0.7
0.75
1 : Gate
1
2
3
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
V
=200V
IN
DD
L
10V
0V
≥50Ω
RG
I
=6A
D
V
R =33.3Ω
IN
L
D
V
OUT
PW=10µs
D.C.≤0.5%
2SK4116LS
10V
0V
V
50Ω
DD
G
2SK4116LS
P. G
S
R
=50Ω
GS
No. A0790-2/5
2SK4116LS
I
-- V
I
-- V
GS
D
DS
D
35
30
25
20
15
10
35
30
25
20
15
10
V
=20V
Tc=25°C
DS
8V
6V
V
=5V
5
0
5
0
GS
0
5
10
15
20
25
30
IT12494
0
3
6
9
12
15
IT12495
Gate-to-Source Voltage, V
GS
-- V
Drain-to-Source Voltage, V
-- V
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
I
=6A
D
Tc= --25°C
25°C
75°C
0.2
0
0.2
0
--50
--25
0
25
50
75
100
125
150
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
Gate-to-Source Voltage, V
-- V
IT12496
Case Temperature, Tc -- °C
IT12497
GS
yfs -- I
D
I
-- V
S
SD
2
5
V =0V
GS
V =10V
DS
3
2
10
10
7
5
7
5
3
2
3
2
1.0
7
5
3
2
1.0
0.1
7
5
7
5
3
2
3
2
0.01
0.2
2
3
5
7
2
3
5
7
2
3
0.4
0.6
0.8
1.0
1.2
1.4
IT12499
0.1
1.0
10
Drain Current, I -- A
IT12498
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
1000
f=1MHz
V
V
=200V
=10V
7
5
DD
GS
7
5
3
2
3
2
1000
Ciss
7
5
100
3
2
7
5
100
7
5
3
2
t (on)
d
3
2
10
10
2
3
5
7
2
3
5
7
2
3
5
0
10
20
30
40
50
IT12501
0.1
1.0
10
Drain Current, I -- A
IT12500
Drain-to-Source Voltage, V
DS
-- V
D
No. A0790-3/5
2SK4116LS
V
-- Qg
A S O
GS
7
5
10
9
I
=38A
DP
PW≤10µs
V
=200V
=12A
DS
3
2
I
D
I
(*1)=12A
Dc
8
10
7
5
I
(*2)=8.9A
Dpack
7
3
2
6
1.0
7
5
5
4
Operation in
this area is
3
2
3
limited by R (on).
0.1
7
5
DS
2
3
2
1
0
Tc=25°C
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
Single pulse
0.01
0.1
0
0
0
5
10
15
20
25
IT12502
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
100
IT12367
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
-- Tc
D
D
40
2.5
2.0
1.5
1.0
35
33
30
25
20
15
10
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
IT12368
IT12369
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A0790-4/5
2SK4116LS
Note on usage : Since the 2SK4116LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0790-5/5
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