2SK3994 [TOSHIBA]
Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter Applications Motor Drive Applications; 硅N沟道MOS型开关稳压器， DC / DC转换器应用电机驱动应用
| 型号： | 2SK3994 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter Applications Motor Drive Applications |
| 文件： | 总6页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3994
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK3994
Switching Regulator, DC/DC Converter Applications
Unit: mm
Motor Drive Applications
z Low drain−source ON-resistance
z High forward transfer admittance
: R
= 90 mΩ (typ.)
DS (ON)
: |Y | = 10 S (typ.)
fs
z Low leakage current : I
= 100 μA (max) (V
= 250 V)
DSS
DS
z Enhancement mode : V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain−source voltage
Symbol
Rating
Unit
V
250
250
±30
20
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
I
A
D
Drain current
Pulse (Note 1)
I
80
A
DP
Drain power dissipation (Tc = 25°C)
P
45
W
D
AS
AR
JEDEC
JEITA
—
Single-pulse avalanche energy
SC-67
2-10R1B
E
487
mJ
(Note 2)
TOSHIBA
Avalanche current
I
20
4.5
A
Weight: 1.9 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
2.78
62.5
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 2.06 mH, R = 25 Ω, I = 20 A
AR
V
DD
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2006-11-21
2SK3994
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
—
±30
—
—
—
±10
—
μA
V
GSS
GS
DS
Gate−source breakdown voltage
Drain cutoff current
V
V
I
= ±10 μA, V = 0 V
G DS
(BR) GSS
I
V
= 250 V, V
= 0 V
—
100
—
μA
V
DSS
DS
GS
Drain−source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
250
3.0
—
—
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
—
5.0
105
—
V
th
DS
GS
DS
D
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 10 A
90
mΩ
S
DS (ON)
|Y |
D
= 10 V, I = 10 A
5
10
fs
D
C
C
—
2090
280
1000
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
—
oss
Rise time
t
r
—
—
—
20
40
10
—
—
—
I
= 10 A
D
10 V
0 V
V
GS
V
OUT
Turn-on time
Switching time
t
on
ns
Fall time
t
f
∼
V
125 V
DD
<
Duty 1%, t = 10 μs
Turn-off time
t
—
—
40
45
—
—
w
off
Total gate charge (gate−source
plus gate−drain)
Q
g
V
≈ 200 V, V
= 10 V, I = 20 A
nC
DD
GS
D
Gate−source charge
Q
—
—
22
23
—
—
gs
Gate−drain (“Miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
—
Max
20
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
80
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 20 A, V
= 20 A, V
= 0 V
= 0 V
—
—
—
—
320
2.8
−1.5
—
V
DSF
DR
DR
GS
GS
t
ns
μC
rr
dI
/ dt = 100 A / μs
DR
Q
—
rr
Marking
K3994
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead-free (Pb-free) package or
lead-free (Pb-free) finish.
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2SK3994
I
– V
I – V
D DS
D
DS
50
40
30
20
10
0
100
80
60
40
20
0
15
10
Common source
Tc = 25°C
Common source
Tc = 25°C
9.5
12
11
15
Pulse test
Pulse test
9
8.5
8
10
9
8
7.5
V
= 7 V
GS
8
V
= 7 V
GS
0
2
4
6
10
0
4
8
12
16
20
Drain−source voltage
V
DS
(V)
Drain−source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
50
40
30
20
10
0
5
4
3
2
1
0
Common source
Common source
= 10 V
Tc = 25°C
V
DS
Pulse test
Pulse test
Tc = −55°C
I
= 20 A
D
100
10
5
25
0
4
8
12
16
20
0
4
8
12
16
20
Gate−source voltage
V
(V)
Gate−source voltage
V
D
(V)
GS
GS
⎪Y ⎪ – I
R
– I
DS (ON)
fs
D
100
10
1
1
Common source
Common source
Tc = 25°C
V
= 10 V
DS
Pulse test
Pulse test
Tc = −55°C
V
= 10 V
GS
0.1
100
25
15
0.1
0.1
0.01
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2SK3994
R
– Tc
I
– V
DR DS
DS (ON)
0.3
0.24
0.18
0.12
0.06
0
1000
100
10
Common source
= 10 V
Common source
Tc = 25°C
V
GS
Pulse test
Pulse test
10
5
I
= 20 A
D
V
= 0 V
GS
10
5
3
1
0
−80
−40
0
40
80
120
160
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
Case temperature Tc (°C)
Drain−source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
30000
10000
6
5
4
3
2
1
0
C
iss
1000
100
10
C
oss
Common source
= 0 V
f = 1 MHz
Tc = 25°C
Common source
= 10 V
V
GS
V
DS
I = 1 mA
D
C
rss
Pulse test
−80
−40
0
40
80
120
160
0.1
1
10
100
1000
Case temperature Tc (°C)
Drain−source voltage
V
DS
(V)
Dynamic input/output characteristics
250
20
Common source
I
= 20 A
D
V
Tc = 25°C
Pulse test
DS
200
150
100
50
16
12
8
V
= 200 V
DD
50 V
100 V
V
GS
4
0
0
0
100
20
40
60
80
Total gate charge
Q
(nC)
g
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2SK3994
Safe operating area
E
– T
AS
ch
100
500
max
Ｉ
Ｄ
*
１00μs
(pulse)
＊
1ms*
400
300
200
100
10
max
Ｉ
Ｄ
(continuous)
＊
DC operation
Tc=25
1
℃
0.1
Single nonrepetitive
＊
Ta=25
℃
0
25
Curves must be derated
linealy with increase in
temperature.
50
75
100
125
(°C)
150
max
Ｖ
．
ＤＳＳ
Channel temperature (initial)
T
ch
0.01
1
10
100
1000
Drain-source voltage
ＶＤＳ （Ｖ）
B
VDSS
15 V
I
AR
−15 V
V
V
DD
DS
B
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
B
V
DD
= 50 V, L = 2.06 mH
VDSS
DD
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2006-11-21
2SK3994
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-21
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