2SK3995 [PANASONIC]
Power Field-Effect Transistor, 30A I(D), 200V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220C-G1, 3 PIN;
| 型号： | 2SK3995 |
| 厂家： | 
PANASONIC |
| 描述： | Power Field-Effect Transistor, 30A I(D), 200V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220C-G1, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3995
Silicon N-channel enhancement MOSFET
For high speed switching circuits
For PDP
Features
Package
Medium breakdown voltag: VDSS = 200 V, ID = 30A
Low ON resistance, optimum for PDP panel drive
ꢀCode
TO-220C-G1
ꢀMarking Symbol: K3995
ꢀPin Name
Absolute Maximum Ratings T = 25°C
a
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
200
Unit
V
3. Source
V
±
A
Internal Connection
D
1
Peak drain current *
IP
120
A
Drain reverse current
IDR
30
A
G
1
Peak drain reverse current *
IDR
EAS
10
A
2
Avalanche energy capability *
801
mJ
W
W
°C
°C
S
T= 25°C
50
Drain power dissipation
PD
3
T = 25°C *
1.4
a
Junction temperaure
Storage tperature
150
T
stg
-55 to +150
Note) 1: PW ≤ 0 ms, ty ≤ 1.0%
*
2: Avaanche energy capabity guaranteed
3: Witht heat sink
*
Electrical Cs TC = 25°C±3°C
Para
Drain-source surrender votage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
VDSS
IDSS
IGSS
Vth
ID = 1 mA, VGS = 0
200
VDS = 160 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1.0 mA
10
±1.0
4.5
52
mA
mA
V
2.5
12
Drain-source ON resistance
Forward transfer conductance
Short-circuitinputcapacitance(Commonsource)
Short-circuitoutputcapacitance(Commonsource)
Reversetransfercapacitance(Commonsource)
Turn-on delay time
RDS(on) VGS = 10 V, ID = 15.0A
43
22
mW
S
VDS = 10 V, ID = 15.0A
Yfs
Ciss
Coss
Crss
td(on)
tr
1970
400
85
pF
pF
pF
ns
VDS = 25 V, VGS = 0, f = 1 MHz
32
Rise time
130
170
88
ns
VDD = 100 V, ID = 15.0A
RL = 6.7 W, VGS = 10 V
Turn-off delay time
td(off)
tf
ns
Fall time
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
SJG00044AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3995
Electrical Characteristics (continued) TC = 25°C±3°C
Parameter
Diode forward voltage
Symbol
VDSF
trr
Conditions
IDR = 30A, VGS = 0
Min
Typ
Max
Unit
V
-1.5
Reverse recovery time
Reverse recovery charge
Gate charge load
220
1.1
66
ns
L = 230 mH, VDD = 100 V
IDR = 15.0A, di / dt = 100A/ms
Qrr
mC
Qg
nC
Gate-source charge
Qgs
VDD = 100 V, ID = 15.0A, VGS = 10 V
11
nC
Gate-drain charge
Qgd
37
nC
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Rth(ch-c)
Rth(ch-a)
2.5
°C/W
°C/W
89.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measurinmethods for transistors.
PC T
ID VDS
a
103
102
10
1
Norepetitive lse
C = 2°C
T
IPD
T
C = Ta
50
25
0
t = 100 µs
ID
ms
10 ms
DC
10−2
Withouat sink
50
1
0
00
10
102
103
150
Ambient temperture Ta (°C
Drain-source voltage VDS (V)
2
SJG00044AED
This product complies with the RoHS Directive (EU 2002/95/EC).
TO-220C-G1
Unit: mm
6 02
10.5 0.3
1.4 0.1
8 0.1
2.5 0.2
0 to 0.3
2.54 0.3
(10.2)
(8.9)
2
1
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
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maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
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(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
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Electric ndurial Co., Ltd.
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