2SK2399(2-7J1B) [TOSHIBA]
TRANSISTOR 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power;
| 型号： | 2SK2399(2-7J1B) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2399
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2SK2399
Chopper Regulator, DC−DC Converter and Motor Drive
Unit: mm
Applications
ꢀ 4 V gate drive
ꢀ Low drain−source ON resistance
ꢀ High forward transfer admittance
: R = 0.17 Ω (typ.)
DS (ON)
: |Y | = 4.5 S (typ.)
fs
ꢀ Low leakage current : I
= 100 µA (max) (V = 100 V)
DSS
DS
ꢀ Enhancement−mode : V = 0.8~2.0 V (V
= 10 V, I = 1 mA)
th
DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
100
100
±20
5
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
I
A
D
Drain current
Pulse (Note 1)
I
20
A
DP
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
P
20
W
D
AS
AR
JEDEC
JEITA
―
E
180
mJ
(Note 2)
SC-64
2-7B1B
Avalanche current
I
5
2
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.36 g (typ.)
T
150
ch
Storage temperature range
T
−55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
6.25
125
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 Ω, I
ch
= 5 A
AR
G
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
―
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-07-22
2SK2399
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
I
V
V
= ±16 V, V = 0 V
—
—
—
—
±10
100
µA
µA
GSS
GS
DS
DS
I
= 100 V, V
= 0 V
DSS
GS
V
I
= 10 mA, V
= 0 V
GS
100
—
—
V
V
Ω
S
(BR) DSS
D
Gate threshold voltage
V
V
V
V
V
= 10 V, I = 1 mA
0.8
—
—
0.22
0.17
4.5
2.0
0.30
0.23
—
th
DS
GS
GS
DS
D
= 4 V, I = 2.5 A
D
Drain−source ON resistance
R
DS (ON)
= 10 V, I = 2.5 A
—
D
Forward transfer admittance
Input capacitance
|Y |
= 10 V, I = 2.5 A
2.0
—
fs
D
C
C
500
80
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
190
—
oss
Rise time
t
—
—
—
17
25
50
—
—
—
r
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
195
22
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ 80 V, V
= 10 V, I = 5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
15
7
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
5
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
20
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 5 A, V
= 5 A, V
= 0 V
—
—
—
—
−1.7
—
V
DSF
DR
DR
GS
GS
t
160
0.28
ns
µC
rr
= 0 V, dI / dt = 50 A / µs
DR
Q
—
rr
Marking
2
2002-07-22
2SK2399
3
2002-07-22
2SK2399
4
2002-07-22
2SK2399
1
B
R
V
= 25 Ω
VDSS
VDSS
G
E
=
L I2
AS
= 25 V, L = 11.6 mH
2
B
− V
DD
DD
5
2002-07-22
2SK2399
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
6
2002-07-22
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