2SK2399_06 [TOSHIBA]
Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications; 硅N沟道MOS型斩波稳压器， DC / DC转换器和电机驱动应用
| 型号： | 2SK2399_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications |
| 文件： | 总6页 (文件大小：777K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2399
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)
2SK2399
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4 V gate drive
z Low drain−source ON-resistance
z High forward transfer admittance
: R
= 0.17 Ω (typ.)
DS (ON)
: |Y | = 4.5 S (typ.)
fs
z Low leakage current : I
= 100 μA (max) (V
= 100 V)
DSS
DS
z Enhancement mode : V = 0.8~2.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain−source voltage
Symbol
Rating
Unit
V
100
100
±20
5
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
I
A
D
Drain current
Pulse (Note 1)
I
20
A
JEDEC
JEITA
―
DP
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
P
20
W
D
AS
AR
SC-64
2-7B1B
E
180
mJ
TOSHIBA
(Note 2)
Weight: 0.36 g (typ.)
Avalanche current
I
5
2
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
6.25
125
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
JEDEC
JEITA
―
―
Thermal resistance, channel to
ambient
R
TOSHIBA
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 Ω, I
Weight: 0.36 g (typ.)
V
DD
= 5 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-20
2SK2399
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±16 V, V = 0 V
—
—
—
—
±10
100
—
μA
μA
V
GSS
GS
DS
DS
Drain cutoff current
I
= 100 V, V
= 0 V
DSS
(BR) DSS
GS
Drain−source breakdown voltage
Gate threshold voltage
V
I
= 10 mA, V
= 0 V
100
0.8
—
—
D
GS
V
V
V
V
V
= 10 V, I = 1 mA
—
2.0
0.30
0.23
—
V
th
DS
GS
GS
DS
D
= 4 V, I = 2.5 A
0.22
0.17
4.5
500
80
D
Drain−source ON-resistance
R
Ω
DS (ON)
= 10 V, I = 2.5 A
—
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 2.5 A
2.0
—
S
D
C
C
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
190
—
oss
Rise time
t
—
—
—
17
25
50
—
—
—
r
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
195
22
—
—
off
Total gate charge (gate−source
plus gate−drain)
Q
g
V
≈ 80 V, V
= 10 V, I = 5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
15
7
—
—
gs
Gate−drain (“Miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
—
Max
5
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
20
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 5 A, V
= 5 A, V
= 0 V
—
—
—
—
−1.7
—
V
DSF
DR
DR
GS
GS
t
160
0.28
ns
μC
rr
= 0 V, dI
/ dt = 50 A / μs
DR
Q
—
rr
Marking
K2399
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20
2SK2399
3
2006-11-20
2SK2399
4
2006-11-20
2SK2399
1
2
B
VDSS
R
V
= 25 Ω
⎛
⎜
⎞
⎟
G
E
=
⋅ L ⋅ I2 ⋅
AS
= 25 V, L = 11.6 mH
B
− V
DD
VDSS
DD
⎝
⎠
5
2006-11-20
2SK2399
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-20
相关型号：
2SK2400
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA
2SK2400_06
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
TOSHIBA
2SK2401
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA
2SK2401_06
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明