2SK2312_07 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV); 东芝场效应晶体管硅N沟道MOS型（ L2-ば-MOSV ）
| 型号： | 2SK2312_07 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV) |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2312
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2SK2312
Chopper Regulator, DC−DC Converter and Motor Drive
Unit: mm
Applications
l 4 V gate drive
l Low drain−source ON resistance
l High forward transfer admittance
: R = 13 mΩ (typ.)
DS (ON)
: |Y | = 40 S (typ.)
fs
l Low leakage current
l Enhancement−mode
: I
= 100 µA (max) (V
th DS
= 60 V)
= 10 V, I = 1 mA)
DSS
DS
: V = 0.8~2.0 V (V
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
V
60
60
V
V
DSS
Drain−gate voltage (R
= 20 kΩ)
V
GS
DGR
Gate−source voltage
V
±20
45
V
GSS
DC (Note 1)
I
A
D
Drain current
Pulse (Note 1)
I
180
45
A
DP
JEDEC
JEITA
―
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
P
W
D
AS
AR
SC-67
2-10R1B
E
701
mJ
(Note 2)
TOSHIBA
Avalanche current
I
45
4.5
A
Weight: 1.9 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
−55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
2.78
62.5
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 25 V, T = 25°C (initial), L = 471 µH, R = 25 Ω, I
= 45 A
AR
ch
G
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
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2SK2312
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
—
—
60
0.8
—
—
28
—
—
—
—
—
±10
100
—
µA
µA
V
GSS
GS
DS
DS
Drain cut−off current
I
= 60 V, V
= 0 V
DSS
GS
GS
Drain−source breakdown voltage
Gate threshold voltage
V
I
= 10 mA, V
D
= 0 V
—
(BR) DSS
V
V
V
V
= 10 V, I = 1 mA
—
2.0
25
17
—
V
V
th
DS
D
= 4 V, I = 25 A
19
GS
GS
DS
D
Drain−source ON resistance
R
mΩ
DS (ON)
= 10 V, I = 25 A
13
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 25 A
40
S
D
C
C
3350
550
1600
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
—
DS
rss
C
oss
—
Rise time
t
—
—
—
25
55
60
—
—
—
r
Turn−on time
Switching time
t
on
Fall time
t
f
Turn−off time
t
—
—
180
110
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ 48 V, V
= 10 V, I = 45 A
nC
DD
GS
D
Gate−source charge
Q
—
—
70
40
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
45
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
180
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
V
I
I
= 45 A, V
= 45 A, V
= 0 V
= 0 V
—
—
—
—
120
0.2
−1.7
—
V
DSF
DR
DR
GS
GS
t
ns
µC
rr
dI
/ dt = 50 A / µs
DR
Q
—
rr
Marking
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2SK2312
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2SK2312
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2SK2312
R
V
= 25 Ω
G
1
æ
ç
è
B
ö
VDSS
E
=
×L ×I2 ×
÷
AS
= 25 V, L = 471 µH
DD
2
B
- V
VDSS
DD
ø
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2SK2312
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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