2SK2315 [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK2315 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总6页 (文件大小：2101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2315
Silicon N Channel MOS FET
REJ03G1006-0200
(Previous: ADE-208-1354)
Rev.2.00
Sep.07,2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can from 3 V source.
Suitable for DC-DC cove, power switch, solenoid drive
Outline
RENESAA
(Package na
D
1. Gate
2. Drain
3. Source
4. Drain
G
Note: Marking is “TY”
Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 5
2SK2315
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
Unit
60
V
V
VGSS
±20
2
ID
A
1
Drain peak current
ID(pulse)
*
4
A
Body to drain diode reverse drain current
Channel dissipation
IDR
2
A
Pch*2
Tch
1
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
Electrical Characteristics
(Ta = 25°C)
Item
ol
Min
60
±20
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.3 A, VGS = 3 V*3
ID = 1 A, VGS = 4 V*3
ID = 1 A, VDS = 10 V*3
Drain to source breakdo
Gate to source break
Gate to source leak cur
Zero gate voltage drain cu
Gate to source cutoff voltage
—
—
V
—
±5
5
µA
µA
V
—
—
1.5
0.6
0.45
—
Static drain to source on state
resistance
Ω
Ω
Forward transfer admittance
Input capacitance
Cis
Coss
Crss
ton
S
pF
pF
pF
s
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on time
—
ID = 1 A, RL = 30 Ω,
VGS = 10 V
Turn-off time
toff
—
Note: 3. Pulse Test
Rev.2.00 Sep. 07, 2005 page 2 of 5
2SK2315
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
5
1.6
1.2
0.8
0.4
100 µs
2
1
0.5
0.2
0.1
Operation in
this area is
limited by R
DS(on)
0.05
0.02
Ta = 25°C
1 shot pulse
0.01
0.005
0
0.2 0.5
1
2
5
10 20
50 100 200
50
100
150
200
Drain to Source Voltage VDS (V)
Ambient Tere Ta (°C)
Ts
Typical Transfer Characteristics
5
4
3
2
1
5
4
3
4
3.5 V
Tc = 75°C
25°C
–25°C
2.5 V
2 V
VDS = 10 V
Pulse Test
VGS = 1.5 V
0
3
4
5
2
4
6
8
10
Drain to Source Voltage VDS (V)
oltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
e State Resistance
in Current
5
1.0
0.8
0.6
0.4
0.2
Pulse Test
Ta = 25°C
Ta = °C
Pulse Test
2
1
ID = 2 A
VGS = 3 V
10 V
0.5
0.2
0.1
1 A
0.5 A
0.05
0
4
8
12
16
20
0.1 0.2
0.5
1
2
5
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep. 07, 2005 page 3 of 5
2SK2315
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
10
5
1.0
Tc = –25°C
25°C
0.8
0.6
0.4
0.2
ID = 2 A
75°C
2
1
VGS = 3 V
0.5 A
1 A
0.5
1 A
0.5 A
ID = 2 A
VDS = 10 V
Pulse Test
VGS = 10 V
0.2
0.1
0
–40
0
40
80
120
160
0.1 0.2
0.5
1
2
5
10
Case Temperature Tc (°C)
Drain Current ID (A)
Typicavs.
Dra
Dynamic Input Characteristics
1000
100
100
80
60
40
20
VGS
VDD = 50 V
25 V
16
12
8
10 V
VDS
Crss
ID = 2 A
10
1
4
0
VGS = 0
f = 1 MHz
VDD = 50 V
25 V
10 V
4
6
8
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
arge Qg (nc)
rent vs.
Voltage
Switching Characteristics
200
100
5
4
3
2
1
P
t
d(off)
50
t
f
20
10
5
10 V
t
r
5 V
t
d(on)
VGS = 0
VGS = 10 V, PW = 2 µs
DD = 30 V, duty < 1 %
V
2
0
0.4
0.8
1.2
1.6
2.0
0.05 0.1 0.2
0.5
1
2
5
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Rev.2.00 Sep. 07, 2005 page 4 of 5
2SK2315
Package Dimensions
JEITA Package Code
SC-62
RENESAS Code
Package Name
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
PLZZ0004CA-A
Ordering Information
Part Name
Quantity
ping Container
2SK2315TYTL-E
2SK2315TYTR-E
1000 pcs
1000 pcs
Note: For some grades, production may be terminated. Pleasice to check the state of
production before ordering the product.
Rev.2.00 Sep. 07, 2005 page 5 of 5
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Colophon .3.0
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