2SK2315TY [HITACHI]
Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | 2SK2315TY |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| 文件： | 总7页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2315
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
1
2
3
4
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK2315
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
±20
V
ID
2
A
1
Drain peak current
ID(pulse)
*
4
A
Body to drain diode reverse drain current
Channel dissipation
IDR
2
A
Pch*2
Tch
1
W
°C
°C
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
150
Tstg
–55 to +150
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
3. Marking is “TY”
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
0.5
—
—
—
—
0.4
±5
5
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.3 A
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
1.5
0.6
Static drain to source on state RDS(on)
resistance
Ω
V
GS = 3 V*1
ID = 1 A
GS = 4 V*1
ID = 1 A
DS = 10 V*1
—
0.35
1.8
0.45
—
Ω
V
Forward transfer admittance
|yfs|
1.5
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
173
85
—
—
—
—
—
pF
pF
pF
ns
ns
VDS = 10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
23
f = 1 MHz
Turn-on time
ton
toff
21
ID = 1 A, RL = 30 Ω
VGS = 10 V
Turn-off time
85
Note 1. Pulse Test
2
2SK2315
Power vs. Temperature Derating
Maximum Safe Operation Area
1.6
1.2
0.8
0.4
5
100 µs
2
1
0.5
0.2
0.1
Operation in
this area is
limited by R
DS(on)
0.05
0.02
Ta = 25 °C
1 shot pulse
0.01
0.005
0
50
100
150
200
0.2 0.5
1
2
5
10 20
50 100 200
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Typical Output Characteristics
Typical Transfer Characteristics
5
5
10 V
5 V
4 V
Ta = 25 °C
Pulse Test
4
3
2
1
4
3
2
1
3.5 V
3 V
Tc = 75 °C
25 °C
–25 °C
2.5 V
2 V
= 1.5 V
6
V
= 10 V
DS
Pulse Test
V
GS
0
2
4
8
10
0
1
2
3
4
GS
5
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
3
2SK2315
Static Drain to Source State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
1.0
0.8
0.6
0.4
0.2
Pulse Test
Ta = 25 °C
Ta = 25 °C
Pulse Test
2
1
I
= 2 A
D
V
GS
= 3 V
10 V
0.5
0.2
0.1
1 A
0.5 A
0.05
0.1 0.2
0.5
1
2
5
10
0
4
8
12
16
20
Gate to Source Voltage
V
(V)
Drain Current
I
(A)
D
GS
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
1.0
10
5
Tc = –25 °C
25 °C
0.8
0.6
0.4
0.2
75 °C
I
= 2 A
1 A
D
2
1
V
GS
= 3 V
0.5 A
0.5
1 A
0.5 A
= 2 A
V
= 10 V
DS
I
D
Pulse Test
0.2
0.1
V
GS
= 10 V
0
0.1 0.2
0.5
1
2
5
10
–40
0
40
80
120
160
Drain Current I (A)
Case Temperature Tc (°C)
D
4
2SK2315
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
1000
100
100
80
60
40
20
20
16
12
8
V
GS
V
= 50 V
25 V
DD
Ciss
10 V
Coss
V
DS
Crss
I
= 2 A
10
1
D
V
GS
= 0
4
0
V
= 50 V
25 V
10 V
DD
f = 1 MHz
0
10
20
30
40
50
(V)
0
2
4
6
8
10
Drain to Source Voltage V
Gate Charge Qg (nc)
DS
Reverse Drain Current vs.
Souece to Drain Voltage
Switching Characteristics
5
4
3
2
1
200
100
Pulse Test
t
d(off)
50
t
f
20
10
5
10 V
t
5 V
r
t
d(on)
V
= 0
GS
1.2
V
V
= 10 V, PW = 2 µs
= 30 V, duty < 1 %
GS
DD
2
0
0.4
0.8
1.6
SD
2.0
(V)
0.05 0.1 0.2
0.5
1
2
5
Source to Drain Voltage
V
Drain Current
I
(A)
D
5
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
2SK2315TYTL
Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI
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