2SK210-YTE85R [TOSHIBA]

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal;
2SK210-YTE85R
型号: 2SK210-YTE85R
厂家: TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述:

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal

放大器 光电二极管 晶体管
文件: 总6页 (文件大小:342K)
下载:  下载PDF数据表文档文件

2SK211

N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)

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367 TOSHIBA

2SK211

Silicon N Channel Junction Type FM Tuner Applications

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182 TOSHIBA

2SK211_07

Silicon N Channel Junction Type FM Tuner Applications

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17 TOSHIBA

2SK2110

MOS Field Effect Transistor

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20 KEXIN

2SK2110

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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146 NEC

2SK2110

Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100

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5 TYSEMI

2SK2110

Small Signal Field-Effect Transistor, 1-Element, Silicon, SC-62, POWER MINIMOLD, 3 PIN

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0 NEC

2SK2110

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 NEC

2SK2111

Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed

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11 TYSEMI

2SK2111

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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119 NEC

2SK2111

MOS Field Effect Transistor

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51 KEXIN

2SK2112

MOS Field Effect Transistor

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54 KEXIN

2SK2112

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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114 NEC

2SK2112

Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed

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19 TYSEMI

2SK2112

Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2 NEC