2SK211 [TOSHIBA]
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS); N沟道结型（ FM调谐器， VHF频带放大器应用）
| 型号： | 2SK211 |
| 厂家： | 
TOSHIBA SEMICONDUCTOR |
| 描述： | N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) |
| 文件： | 总5页 (文件大小：223K) |
| 下载： | 下载PDF数据表文档文件 |
2SK211_07
Silicon N Channel Junction Type FM Tuner ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
TOSHIBA
2SK2110
MOS Field Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
KEXIN
2SK2110
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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146
NEC
2SK2110
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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5
TYSEMI
2SK2110
Small Signal Field-Effect Transistor, 1-Element, Silicon, SC-62, POWER MINIMOLD, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
NEC
2SK2110
Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
NEC
2SK2111
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speedWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
TYSEMI
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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119
NEC
2SK2111
MOS Field Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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51
KEXIN
2SK2112
MOS Field Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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54
KEXIN
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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114
NEC
2SK2112
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speedWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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19
TYSEMI
2SK2112
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
NEC
2SK2112-AZ
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NEC
Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
51
ETC
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