2SD2462_06 [TOSHIBA]
Power Amplifier Applications; 功率放大器的应用
| 型号： | 2SD2462_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Power Amplifier Applications |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2462
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2462
Power Amplifier Applications
Unit: mm
•
•
•
High DC current gain: h
= 800 to 3200 (V
= 5 V, I = 0.2 A)
FE (1)
CE C
Low saturation voltage: V
= 0.4 V (typ.) (I = 1 A, I = 10 mA)
C B
CE (sat)
Complementary to 2SB1602
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
60
60
7
V
V
V
Collector-emitter voltage
Emitter-base voltage
DC
I
3
C
Collector current
A
Pulse
I
6
CP
Base current
I
0.6
1.3
150
A
B
Collector power dissipation
Junction temperature
P
W
°C
°C
C
JEDEC
JEITA
―
―
T
j
Storage temperature range
T
stg
−55 to 150
TOSHIBA
2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21
2SD2462
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 60 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―
―
―
―
100
100
―
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 50 mA, I = 0
60
800
350
―
―
C
B
h
h
V
V
= 5 V, I = 0.2 A
―
3200
―
FE (1)
FE (2)
CE
CE
C
DC current gain
= 5 V, I = 1.5 A
―
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= 1 A, I = 10 mA
0.4
0.7
18
42
1.0
1.0
―
V
V
CE (sat)
C
B
V
V
V
V
= 5 V, I = 0.5 A
―
BE
CE
CE
CB
C
Transition frequency
f
= 5 V, I = 0.5 A
―
MHz
pF
T
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
―
―
ob
E
Marking
D2462
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
2SD2462
I
– V
V
– I
CE (sat) C
C
CE
5
3
4
3
Common emitter
Common emitter
Ta = 25°C
25
−25
I
/I = 100
C B
50
20
10
1
Ta = 100°C
7
5
0.5
0.3
4
3
2
1
2
1
0.1
0.05
0.03
I
= 0.5 mA
B
0
0
0.01
0.01
2
4
6
8
10
0.03
0.1
0.3
1
3
10
Collector-emitter voltage
V
(V)
Collector current
I
C
(A)
CE
h
– I
h
– I
FE C
FE
C
10000
10000
Common emitter
= 5 V
Common emitter
Ta = 25°C
V
CE
5000
3000
5000
3000
Ta = 100°C
25
10
= 5 V
1000
1000
V
CE
−25
500
300
500
300
100
0.01
100
0.01
0.03
0.1
0.3
1
3
5
0.03
0.1
0.3
1
3
5
Collector current
I
C
(A)
Collector current
I
C
(A)
I
– V
P
– Ta
C
C
BE
3.0
2.5
2.0
1.5
1.0
0.5
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Common emitter
= 5 V
V
CE
Ta = 100°C
25
−25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-emitter voltage
V
(V)
Ambient temperature Ta (°C)
BE
3
2006-11-21
2SD2462
r
th
– t
w
1000
Curves should be applied in thermal limited area. (Single nonrepetitive pulse) Ta = 25°C
500
300
100
50
30
10
5
3
1
0.5
0.3
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
10
I
max (pulsed)*
C
10 ms*
1 ms*
5
3
I
max (continuous)
C
100 ms*
1
0.5
0.3
DC operation
Ta = 25°C
0.1
*: Single nonrepetitive
pulse Ta = 25°C
0.05
Curves must be derated linearly
with increase in temperature.
0.03
0.02
V
max
CEO
0.3
1
3
10
30
100
Collector-emitter voltage
V
(V)
CE
4
2006-11-21
2SD2462
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-21
相关型号：
2SD2464
Small Signal Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
PANASONIC
©2020 ICPDF网 联系我们和版权申明