2SD2463L [ETC]
TRANSISTOR | BJT | DARLINGTON | NPN | 31V V(BR)CEO | 2A I(C) | SIP ; 晶体管| BJT |达林顿| NPN | 31V V（ BR ） CEO | 2A I（C ） | SIP\n
| 型号： | 2SD2463L |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 31V V(BR)CEO | 2A I(C) | SIP
|
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SD2463
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SD2463 is a Darlington connection transistor with on-
chip dumper diode in collector to emitter and zener diode in
collector to base. This transistor is ideal for use in acuator
drives such as motors, relays, and solenoids.
FEATURES
• Cost reduction available due to on-chip dumper diode (C to
E) and zener diode ( C to B)
• Low collector saturation voltage
• Insulation type package supportable for radial taping
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Conditions
Ratings
31 4
31 4
8.0
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
V
V
2.0
TC = 25°C
PW ≤ 10 ms, Duty cycle ≤ 50%, TC = 25°C
A
3.0
A
0.2
1.0
A
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
W
W
°C
°C
TC = 25°C
PT
6.0
Tj
150
−55 to +150
Tstg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16158EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD2463
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 20 V, IE = 0
MIN.
TYP.
MAX.
10
Unit
µA
−
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
IC = 1.0 A, IB = 1.0 mA
IC = 1.0 A, IB = 1.0 mA
1000
2000
−
DC current gain
30000
1.2
Collector saturation voltage
Base saturation voltage
Turn-on time
0.9
1.6
0.5
3.0
1.0
V
2.0
V
µs
µs
µs
IC = 1.0 A, VCC= 20 V
IB1 = −IB2 = 0.5 mA
RL = 20 Ω
Storage time
tstg
Turn-off time
tf
hFE CLASSIFICATION
Marking
hFE2
M
L
K
2000 to 5000
4000 to 10000
8000 to 30000
2
Data Sheet D16158EJ1V0DS
2SD2463
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16158EJ1V0DS
2SD2463
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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