2SD2465A [PANASONIC]
Silicon NPN epitaxial planar type ; NPN硅外延平面型\n
| 型号： | 2SD2465A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type
|
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1603
Unit: mm
Features
■
4.6±0.2
●
Low collector to emitter saturation voltage VCE(sat)
High-speed switching
9.9±0.3
2.9±0.2
φ3.2±0.1
●
●
Full-pack package superior in insulation, which can be installed
to the heat sink with one screw
Absolute Maximum Ratings (T =25˚C)
■
C
2.6±0.1
0.7±0.1
1.2±0.15
Parameter
Symbol
Ratings
Unit
1.45±0.15
Collector to
2SD2465
2SD2465A
2SD2465
40
VCBO
V
0.75±0.1
base voltage
Collector to
50
20
2.54±0.2
5.08±0.4
VCEO
V
emitter voltage 2SD2465A
Emitter to base voltage
Peak collector current
Collector current
40
VEBO
ICP
5
V
A
A
1
2 3
7°
8
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
IC
4
Collector power TC=25°C
25
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
µA
V
2SD2465
VCB = 40V, IE = 0
current
2SD2465A
VCB = 50V, IE = 0
VEB = 5V, IC = 0
50
Emitter cutoff current
IEBO
VCEO
hFE1
50
Collector to emitter 2SD2465
voltage 2SD2465A
20
40
45
90
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
Forward current transfer ratio
*
hFE2
260
0.5
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
I
C = 2A, IB = 0.1A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 5V, IC = 0.5A, f = 10MHz
120
0.2
0.5
0.1
MHz
µs
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
1
Power Transistors
2SD2465, 2SD2465A
PC — Ta
IC — VCE
VCE(sat) — IC
40
6
5
4
3
2
1
0
100
IC/IB=10
(1) TC=Ta
(2) With a 100 × 100 × 2mm
TC=25˚C
35
30
25
20
15
10
5
30
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2.0W)
IB=60mA
50mA
40mA
30mA
(1)
(2)
3
1
TC=100˚C
25˚C
20mA
0.3
0.1
10mA
5mA
–25˚C
(3)
(4)
0.03
0.01
0
0
25
50
75
100 125 150
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=10
VCE=2V
VCE=5V
f=10MHz
TC=25˚C
30
10
3000
3000
1000
1000
TC=100˚C
25˚C
3
1
300
100
300
100
25˚C
TC=–25˚C
100˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
10
100
Non repetitive pulse
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
VCC=20V
30
10
)
3
1
ICP
IC
TC=25˚C
t=1ms
tstg
3
1
10ms
DC
ton
tf
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
1
2
3
4
5
6
7
8
1
3
10
30
100 300 1000
( )
A
( )
V
Collector current IC
Collector to emitter voltage VCE
2
Power Transistors
2SD2465, 2SD2465A
Rth(t) — t
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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