2SC4210-Y(TE85L) [TOSHIBA]

2SC4210-Y(TE85L);

2SC4210-Y(TE85L)


型号：	2SC4210-Y(TE85L)
厂家：	TOSHIBA SEMICONDUCTOR
描述：	2SC4210-Y(TE85L)
文件：	总3页 (文件大小：182K)
下载：	下载PDF数据表文档文件

2SC4210-Y(TE85L,F)

TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59

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0 TOSHIBA

2SC4210YTE85L

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4210YTE85R

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4211

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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61 ETC

2SC4211-5

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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21 ETC

2SC4211-6

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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34 ETC

2SC4211-7

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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30 ETC

2SC4212

Silicon NPN triple diffusion planar type

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113 PANASONIC

2SC4212

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

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0 PANASONIC

2SC4213

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

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53 TOSHIBA

2SC4213

Silicon NPN Epitaxial

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28 KEXIN

2SC4213

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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47 TOSHIBA

2SC4213

High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.

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13 TYSEMI

2SC4213_07

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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9 TOSHIBA

2SC4213A

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70

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16 ETC

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