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2SC4210YTE85L [TOSHIBA]

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal;

2SC4210YTE85L


元器件型号：	2SC4210YTE85L
生产厂家：	TOSHIBA SEMICONDUCTOR
描述和应用：	TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal 放大器光电二极管晶体管
PDF文件：	总2页 (文件大小：57K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC4210YTE85L参数

2SC4210YTE85R

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4211

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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61 ETC

2SC4211-5

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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21 ETC

2SC4211-6

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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34 ETC

2SC4211-7

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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30 ETC

2SC4212

Silicon NPN triple diffusion planar type

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113 PANASONIC

2SC4212

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

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0 PANASONIC

2SC4213

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

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53 TOSHIBA

2SC4213

Silicon NPN Epitaxial

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28 KEXIN

2SC4213

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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47 TOSHIBA

2SC4213

High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.

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13 TYSEMI

2SC4213_07

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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9 TOSHIBA

2SC4213A

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70

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16 ETC

2SC4213A

For Muting and Switching Applications

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11 TOSHIBA

2SC4213-A

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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1 TOSHIBA

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