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1SS319_07 [TOSHIBA]

Low Voltage High Speed Switching; 低电压高开关速度
1SS319_07
型号: 1SS319_07
厂家: TOSHIBA    TOSHIBA
描述:

Low Voltage High Speed Switching
低电压高开关速度

开关
文件: 总3页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

1SS321

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

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1SS321

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1SS321

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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SEMTECH

1SS321

Low forward voltage: VF = 0.42 V(Typ) Low reverse current: IR =500 nA(Max)

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TYSEMI

1SS321(SAWAF,F)

Rectifier Diode, Schottky, 2 Element, 0.05A, 12V V(RRM), Silicon

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1SS321TE85L

暂无描述

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1SS321TE85LF

Low-Voltage High-Speed Switching

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1SS321TE85R

暂无描述

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1SS321TE85R2

DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

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1SS321_07

TOSHIBA Diode Silicon Epitaxial Planar Type

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1SS322

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

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LOW VOLTAGE HIGH SPEED SWITCHING

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KEXIN

1SS322

Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5A (Typ)

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TYSEMI

1SS322(T5L,PP,F)

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon

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1SS322TE85R

DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

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1SS322_07

Low Voltage High Speed Switching

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1SS335

High reliability with high surge current handling capability.

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HTSEMI

1SS336

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS336

Small package Low forward voltage: VF3 = 0.84 V(Typ). Small total capacitance:CT = 7pF(Typ).

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TYSEMI

1SS336

ULTRA HIGH SPEED SWITCHING APPLICATION

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