1SS321(SAWAF,F) [TOSHIBA]

Rectifier Diode, Schottky, 2 Element, 0.05A, 12V V(RRM), Silicon;
1SS321(SAWAF,F)
型号: 1SS321(SAWAF,F)
厂家: TOSHIBA    TOSHIBA
描述:

Rectifier Diode, Schottky, 2 Element, 0.05A, 12V V(RRM), Silicon

整流二极管 光电二极管
文件: 总3页 (文件大小:175K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1SS321  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS321  
Unit: mm  
Low Voltage High Speed Switching  
z Low forward voltage  
z Low reverse current  
z Small package  
: V = 0.42V (typ.)  
F
: I = 500nA (max)  
R
: SC-59 (SOT-23MOD)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
12  
10  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
150 (*)  
50 (*)  
1000 (*)  
150  
mA  
mA  
mA  
mW  
°C  
FM  
I
O
I
FSM  
P
JEDEC  
SOT23MOD  
Junction temperature  
T
j
125  
EIAJ  
SC59  
Storage temperature  
T
stg  
55125  
°C  
13G1F  
TOSHIBA  
Weight: 0.012g  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(*) Unit rating. Total rating = unit rating × 1.5.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
I
I
I
0.32  
0.42  
0.63  
F (1)  
F
F
F
Forward voltage  
V
= 10mA  
= 50mA  
F (2)  
V
1.00  
F (3)  
Reverse current  
I
V
V
= 10V  
R
500  
4.5  
R
nA  
pF  
Total capacitance  
C
T
= 0, f = 1MHz  
3.2  
R
Marking  
1
2007-11-01  
1SS321  
2
2007-11-01  
1SS321  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
3
2007-11-01  

相关型号:

1SS321TE85L

暂无描述
TOSHIBA

1SS321TE85LF

Low-Voltage High-Speed Switching
TOSHIBA

1SS321TE85R

暂无描述
TOSHIBA

1SS321TE85R2

DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
TOSHIBA

1SS321_07

TOSHIBA Diode Silicon Epitaxial Planar Type
TOSHIBA

1SS322

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
TOSHIBA

1SS322

LOW VOLTAGE HIGH SPEED SWITCHING
KEXIN

1SS322

Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5A (Typ)
TYSEMI

1SS322(T5L,PP,F)

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
TOSHIBA

1SS322TE85R

DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode
TOSHIBA

1SS322_07

Low Voltage High Speed Switching
TOSHIBA

1SS335

High reliability with high surge current handling capability.
HTSEMI