TPS22914CYFPT [TI]

5.5V、2A、37mΩ 负载开关 | YFP | 4 | -40 to 105;


型号：	TPS22914CYFPT
厂家：	TEXAS INSTRUMENTS
描述：	5.5V、2A、37mΩ 负载开关 \| YFP \| 4 \| -40 to 105 开关驱动接口集成电路
文件：	总30页 (文件大小：1575K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TPS22914B, TPS22914C, TPS22915B, TPS22915C

ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020

TPS2291xx 5.5V、2A、37mΩ 导通电阻负载开关

1 特性

3 说明

• 集成单通道负载开关

• 输入电压范围：1.05 V 至5.5 V

TPS22914/15 是一款小型、低 R_ON、具有受控压摆率

的单通道负载开关。此器件包括一个 N 沟道金属氧化

物半导体场效应晶体管 (MOSFET)，可在 1.05 V 至

5.5 V 的输入电压范围内运行并可支持 2A 的最大持续

电流。此开关由一个开关输入控制，能够直接连接低电

压控制信号。

• 低导通电阻(R_ON

)

– R_ON= 37mΩ（V_IN= 5V 时的典型值）

– R_ON= 38mΩ（V_IN= 3.3V 时的典型值）

– R_ON= 43mΩ（V_IN= 1.8V 时的典型值）

• 2A 最大持续开关电流

小尺寸和低 R_ON使得此器件非常适合于空间受限、电

池供电类应用。此开关的宽输入电压范围使得它成为针

对很多不同电压轨的多用途解决方案。器件的受控上升

时间大大减少了由大容量负载电容导致的涌入电流，从

而减少或消除了电源消耗。通过集成一个在开关关闭时

实现快速输出放电 (QOD) 的 143Ω 下拉电阻器，

TPS22915 进一步减少了总体解决方案尺寸。

• 低静态电流

– 7.7µA（V_IN= 3.3 V 时的典型值）

• 低控制输入阈值允许使用1 V 或更高电压的通用输

入输出(GPIO) 接口

• 受控转换率

– V_IN= 3.3V 时，t_R(TPS22914B/15B) = 64µs

– V_IN= 3.3V 时，t_R(TPS22914C/15C) = 913µs

• 快速输出放电（只适用于TPS22915）

• 超小型晶圆级芯片尺寸封装

TPS22914/15 采用节省空间的小型 0.78mm ×

0.78mm、0.4mm 间距、0.5mm 高度的 4 引脚晶圆芯

片级 (WCSP) 封装 (YFP)。该器件在自然通风环境下

的额定运行温度范围为–40°C 至+105°C。

– 0.78mm × 0.78mm，0.4mm 间距，

0.5mm 高度(YFP)

• 根据JESD 22 测试得出的静电放电(ESD) 性能

器件信息⁽¹⁾

封装尺寸（标称值）

器件型号

TPS22914B

封装

– 2kV 人体放电模式(HBM) 和1kV 器件充电模型

(CDM)

TPS22914C

TPS22915B

TPS22915C

2 应用

DSBGA (4)

0.74 mm x 0.74 mm

• 智能手机、手机

• 超薄、超极本^™/笔记本电脑

• 平板电脑、平板手机

• 可佩戴技术

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

• 固态硬盘

• 数码照相机

VIN

VOUT

GND

-40°C

25°C

85°C

Power Supply

C_IN

C_L

R_L

105°C

OFF

TPS22914/15

GND

简化版原理图

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D005

R_ON与V_IN之间的关系(I_OUT= -200mA)

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLVSCO0

TPS22914B, TPS22914C, TPS22915B, TPS22915C

ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020

www.ti.com.cn

Table of Contents

9.3 Feature Description...................................................16

9.4 Device Functional Modes..........................................17

10 Application and Implementation................................18

10.1 Application Information........................................... 18

10.2 Typical Application.................................................. 18

11 Power Supply Recommendations..............................20

12 Layout...........................................................................20

12.1 Layout Guidelines................................................... 20

12.2 Layout Example...................................................... 21

13 Device and Documentation Support..........................22

13.1 Documentation Support.......................................... 22

13.2 Related Links.......................................................... 22

13.3 接收文档更新通知................................................... 22

13.4 支持资源..................................................................22

13.5 Trademarks.............................................................22

13.6 静电放电警告.......................................................... 22

13.7 术语表..................................................................... 22

14 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Device Comparison Table...............................................3

6 Pin Configuration and Functions...................................3

7 Specifications.................................................................. 4

7.1 Absolute Maximum Ratings........................................ 4

7.2 ESD Ratings............................................................... 4

7.3 Recommended Operating Conditions.........................4

7.4 Thermal Information....................................................4

7.5 Electrical Characteristics.............................................5

7.6 Switching Characteristics............................................8

7.7 Typical DC Characteristics..........................................9

7.8 Typical AC Characteristics (TPS22914B/15B)..........11

7.9 Typical AC Characteristics (TPS22914C/15C)......... 13

8 Parameter Measurement Information..........................15

9 Detailed Description......................................................16

9.1 Overview...................................................................16

9.2 Functional Block Diagram.........................................16

Information.................................................................... 22

4 Revision History

注：以前版本的页码可能与当前版本的页码不同

Changes from Revision D (September 2016) to Revision E (October 2020)

Page

• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1

• 更新了器件信息表中的封装尺寸........................................................................................................................ 1

Changes from Revision C (July 2015) to Revision D (September 2016)

Page

• Changed "TPS22915B" only, to "TPS22915B/C only" in the Electrical Characteristics table ............................5

Changes from Revision B (September 2014) to Revision C (July 2015)

Page

• 将数据表中的T_A额定值从85°C 更新为105°C。.............................................................................................. 1

Changes from Revision A (June 2014) to Revision B (September 2014)

Page

• Updated X-axis scales in th Typical Characteristics section. .............................................................................9

Changes from Revision * (June 2014) to Revision A (June 2014)

Page

• 完整版的最初发布版本。.................................................................................................................................... 1

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ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020

5 Device Comparison Table

R_ONat 3.3V

DEVICE

t_Rat 3.3V

(TYPICAL)

QUICK OUTPUT

DISCHARGE

MAXIMUM OUTPUT

CURRENT

ENABLE

(TYPICAL)

TPS22914B

TPS22914C

TPS22915B

TPS22915C

64 µs

913 µs

64 µs

2 A

Active High

38 mΩ

Yes

913 µs

6 Pin Configuration and Functions

LASER MARKING VIEW

BUMP VIEW

图6-1. YFP PACKAGE 4 PIN DSBGA TOP VIEW

表6-1. Pin Description

VIN

GND

VOUT

表6-2. Pin Functions

NAME

TYPE

DESCRIPTION

NO.

Switch output. Place ceramic bypass capacitor(s) between this pin

and GND. See the Detailed Description section for more information

VOUT

VIN

Switch input. Place ceramic bypass capacitor(s) between this pin and

GND. See the Detailed Description section for more information

GND

Device ground

—

Active high switch control input. Do not leave floating

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7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)^{(1) (2)}

MIN

–0.3

MAX

UNIT

V_IN

Input voltage

V_OUT

V_ON

I_MAX

I_PLS

T_J

Output voltage

ON voltage

Maximum continuous switch current

Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle

Maximum junction temperature

Storage temperature

2.5

125

150

°C

T_STG

–65

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE

±2000

±1000

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Electrostatic

discharge

V_(ESD)

Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)

MIN

1.05

MAX

5.5

UNIT

V_IN

Input voltage

V_ON

ON voltage

5.5

V_IN

5.5

0.5

105

V_OUT

V_{IH, ON}

V_{IL, ON}

T_A

Output voltage

High-level input voltage, ON

Low-level input voltage, ON

Operating free-air temperature range⁽¹⁾

Input Capacitor

V_IN= 1.05 V to 5.5 V

°C

µF

–40

1⁽²⁾

C_IN

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature

may have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature

[T_J(MAX)], the maximum power dissipation of the device in the application [P_D(MAX)], and the junction-to-ambient thermal resistance of

the part/package in the application (θ_JA), as given by the following equation: T_A(MAX)= T_J(MAX)–(θ_JA× P_D(MAX)).

(2) Refer to the Detailed Description section.

7.4 Thermal Information

TPS2291x

THERMAL METRIC⁽¹⁾

YFP (DSBGA)

UNIT

4 PINS

193

2.3

R_θJA

Junction-to-ambient thermal resistance

°C/W

R_θJC(top)

R_θJB

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

Junction-to-top characterization parameter

ψ_JT

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ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020

7.4 Thermal Information (continued)

TPS2291x

THERMAL METRIC⁽¹⁾

YFP (DSBGA)

4 PINS

UNIT

Junction-to-board characterization parameter

°C/W

ψ_JB

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40°C ≤T_A≤+105°C. Typical values are for T_A= 25°C.

PARAMETER

TEST CONDITION

T_A

MIN TYP MAX UNIT

7.7

7.6

7.7

8.4

7.4

6.7

7.7

7.6

7.7

8.4

7.4

6.7

10.8

12.1

9.6

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

V_IN= 5.5 V

V_IN= 5 V

11.9

9.6

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 1.05 V

V_IN= 5.5 V

V_IN= 5 V

Quiescent current

(TPS22914B/15B)

V_ON= 5 V, I_OUT= 0 A

µA

13.5

10.4

13.9

10.9

11.7

11.5

14.1

11.1

13.7

10.7

13.3

11.7

13.4

I_{Q, VIN}

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 1.05 V

Quiescent current

(TPS22914C/15C)

V_ON= 5 V, I_OUT= 0 A

µA

12.8

10.9

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7.5 Electrical Characteristics (continued)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40°C ≤T_A≤+105°C. Typical values are for T_A= 25°C.

PARAMETER

TEST CONDITION

T_A

MIN TYP MAX UNIT

0.5

0.4

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

–40°C to +85°C

–40°C to +105°C

V_IN= 5.5 V

V_IN= 5.0 V

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 1.05 V

I_{SD, VIN}

Shutdown current

V_ON= 0 V, V_OUT= 0 V

µA

I_ON

ON pin input leakage

current

V_IN= 5.5 V, I_OUT= 0 A

0.1

µA

–40°C to +105°C

25°C

102

107

–40°C to +85°C

–40°C to +105°C

25°C

V_IN= 5.5 V, I_OUT= –200 mA

V_IN= 5 V, I_OUT= –200 mA

V_IN= 4.2 V, I_OUT= –200 mA

V_IN= 3.3 V, I_OUT= –200 mA

V_IN= 2.5 V, I_OUT= –200 mA

V_IN= 1.8 V, I_OUT= –200 mA

V_IN= 1.2 V, I_OUT= –200 mA

V_IN= 1.05 V, I_OUT= –200 mA

mΩ

–40°C to +85°C

–40°C to +105°C

25°C

mΩ

–40°C to +85°C

–40°C to +105°C

25°C

–40°C to +85°C

–40°C to +105°C

25°C

R_ON

On-resistance

–40°C to +85°C

–40°C to +105°C

25°C

–40°C to +85°C

–40°C to +105°C

25°C

–40°C to +85°C

–40°C to +105°C

25°C

–40°C to +85°C

–40°C to +105°C

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7.5 Electrical Characteristics (continued)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40°C ≤T_A≤+105°C. Typical values are for T_A= 25°C.

PARAMETER

TEST CONDITION

T_A

MIN TYP MAX UNIT

V_IN= 5.5 V

V_IN= 5 V

102

100

V_IN= 3.3 V

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 1.05 V

V_HYS

ON pin hysteresis

25°C

(1)

R_PD

Output pull down resistor

V_IN= V_OUT= 3.3 V, V_ON= 0 V

143

200

–40°C to +105°C

(1) TPS22915B/C only.

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7.6 Switching Characteristics

Refer to the timing test circuit in 图8-1 (unless otherwise noted) for references to external components used for the test

condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up

sequence where VIN is already in steady state condition before the ON pin is asserted high.

TYP

PARAMETER

TEST CONDITION

UNIT

(TPS22914B/15B) (TPS22914C/15C)

V_IN= 5 V, V_ON= 5 V, T_A= 25°C (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

Delay time

104

1300

µs

R_L= 10 Ω, C_IN= 1 µF, C_OUT= 0.1 µF

1277

t_F

t_D

663

V_IN= 3.3 V, V_ON= 5 V, T_A= 25°C (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

Delay time

1077

µs

R_L= 10 Ω, C_IN= 1 µF, C_OUT= 0.1 µF

913

t_F

t_D

622

V_IN= 1.05 V, V_ON= 5 V, T_A= 25°C (unless otherwise noted)

t_ON

t_OFF

t_R

Turnon time

Turnoff time

V_OUTrise time

V_OUTfall time

Delay time

752

µs

R_L= 10 Ω, C_IN= 1 µF, C_OUT= 0.1 µF

409

t_F

t_D

547

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7.7 Typical DC Characteristics

-40°C

25°C

85°C

105°C

-40°C

25°C

85°C

105°C

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D001

D002

V_ON= 5 V

I_OUT= 0 A

V_ON= 5 V

I_OUT= 0 A

图7-1. I_Qvs V_IN(TPS22914B/15B)

图7-2. I_Qvs V_IN(TPS22914C/15C)

2.8

2.4

-40°C

25°C

85°C

105°C

1.6

1.2

0.8

0.4

VIN = 1.05V

VIN = 1.2V

VIN = 1.5V

VIN = 1.8V

VIN = 2.5V

VIN = 3.3V

VIN = 4.2V

VIN = 5V

VIN = 5.5V

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

-40 -25 -10

20 35 50 65 80 95 110 125

Junction Temperature (èC)

D003

D004

V_ON= 0 V

I_OUT= 0 A

V_ON= 5 V

I_OUT= –200 mA

图7-3. I_SDvs V_IN

图7-4. R_ONvs T_J

-40°C

25°C

85°C

105°C

VIN = 1.05V

VIN = 1.2V

VIN = 1.5V

VIN = 1.8V

VIN = 2.5V

VIN = 3.3V

VIN = 4.2V

VIN = 5V

VIN = 5.5V

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

0.5

I_OUT(A)

1.5

D005

D006

V_ON= 5 V

T_A= 25°C

I_OUT= –200 mA

图7-6. R_ONvs I_OUT

图7-5. R_ONvs V_IN

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0.95

0.9

-40°C

0.95

25°C

85°C

105°C

0.9

0.85

0.8

0.85

0.8

0.75

0.7

0.75

0.7

0.65

0.6

0.65

0.6

-40°C

25°C

85°C

0.55

0.5

0.55

0.5

105°C

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D007

D008

I_OUT= 0 A

图7-7. V_ILvs V_IN

图7-8. V_IHvs V_IN

170

160

150

140

130

120

110

100

190

185

180

175

170

165

160

155

150

145

140

-40°C

25°C

85°C

-40°C

25°C

85°C

105°C

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D009

D010

I_OUT= 0 A

V_IN= V_OUT

V_ON= 0 V

图7-9. V_HYSvs V_IN

图7-10. R_PDvs V_IN

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7.8 Typical AC Characteristics (TPS22914B/15B)

100

-40°C

25°C

85°C

105°C

-40°C

25°C

85°C

105°C

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D011

D012

C_IN= 1 µF

C_L= 0.1 µF

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-11. t_Rvs V_IN

图7-12. t_Dvs V_IN

4.5

3.5

2.5

1.5

-40°C

25°C

85°C

105°C

-40°C

25°C

85°C

105°C

0.5

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D013

D014

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-13. t_Fvs V_IN

图7-14. t_OFFvs V_IN

120

110

100

-40°C

25°C

85°C

105°C

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D015

V_IN= 5 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-15. t_ONvs V_IN

图7-16. t_Rat V_IN= 5 V

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V_IN= 5 V

C_IN= 1 µF

C_L= 0.1 µF

V_IN= 3.3 V

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-17. t_Fat V_IN= 5 V

图7-18. t_Rat V_IN= 3.3 V

V_IN= 3.3 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

V_IN= 1.05 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

图7-19. t_Fat V_IN= 3.3V

图7-20. t_Rat V_IN= 1.05V

V_IN= 1.05 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

图7-21. t_Fat V_IN= 1.05 V

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7.9 Typical AC Characteristics (TPS22914C/15C)

1500

1300

1100

900

750

700

650

600

550

500

450

700

-40°C

25°C

85°C

105°C

25°C

85°C

105°C

500

300

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D016

D017

C_IN= 1 µF

C_L= 0.1 µF

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-22. t_Rvs V_IN

图7-23. t_Dvs V_IN

4.5

3.5

2.5

1.5

-40°C

25°C

85°C

105°C

-40°C

25°C

85°C

105°C

0.5

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D018

D019

C_IN= 1 µF

C_L= 0.1 µF

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-24. t_Fvs V_IN

图7-25. t_OFFvs V_IN

1600

1400

1200

1000

800

-40°C

25°C

85°C

105°C

600

1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5

V_IN(V)

D020

V_IN= 5 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-26. t_ONvs V_IN

图7-27. t_Rat V_IN= 5 V

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V_IN= 5 V

C_IN= 1 µF

C_L= 0.1 µF

V_IN= 3.3 V

C_IN= 1 µF

C_L= 0.1 µF

R_L= 10 Ω

图7-28. t_Fat V_IN= 5 V

图7-29. t_Rat V_IN= 3.3 V

V_IN= 3.3 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

V_IN= 1.05 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

图7-30. t_Fat V_IN= 3.3 V

图7-31. t_Rat V_IN= 1.05 V

V_IN= 1.05 V

R_L= 10 Ω

C_IN= 1 µF

C_L= 0.1 µF

图7-32. t_Fat V_IN= 1.05 V

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8 Parameter Measurement Information

VIN

VOUT

C_IN= 1 µF

C_L

R_L

(A)

GND

TPS22914/15

OFF

GND

A. Rise and fall times of the control signal is 100ns

图8-1. Test Circuit

V_ON

50%

t_F

t_OFF

t_R

t_ON

90%

V_OUT

50%

10%

50%

10%

t_D

图8-2. Timing Waveforms

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9 Detailed Description

9.1 Overview

The device is a 5.5-V, 2-A load switch in a 4-pin YFP package. To reduce voltage drop for low voltage and high

current rails, the device implements an ultra-low resistance N-channel MOSFET which reduces the drop out

voltage through the device.

The device has a controlled and fixed slew rate which helps reduce or eliminate power supply droop due to large

inrush currents. During shutdown, the device has very low leakage currents, thereby reducing unnecessary

leakages for downstream modules during standby. Integrated control logic, driver, charge pump, and output

discharge FET eliminates the need for any external components, which reduces solution size and bill of

materials (BOM) count.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 On and Off Control

The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a

low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard

GPIO logic threshold. It can be used with any microcontroller with 1 V or higher GPIO voltage. This pin cannot

be left floating and must be driven either high or low for proper functionality.

9.3.2 Input Capacitor (C_IN)

To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a

discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF

ceramic capacitor, C_IN, placed close to the pins, is usually sufficient. Higher values of C_INcan be used to further

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reduce the voltage drop during high-current application. When switching heavy loads, it is recommended to have

an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.

9.3.3 Output Capacitor (C_L)

Due to the integrated body diode in the MOSFET, a C_INgreater than C_Lis highly recommended. A C_Lgreater

than C_INcan cause V_OUTto exceed V_INwhen the system supply is removed. This could result in current flow

through the body diode from VOUT to VIN. A C_INto C_Lratio of 10 to 1 is recommended for minimizing V_INdip

caused by inrush currents during startup.

9.4 Device Functional Modes

表9-1 describes the connection of the VOUT pin depending on the state of the ON pin.

表9-1. VOUT Connection

TPS22914

Open

TPS22915

GND

VIN

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10 Application and Implementation

Note

以下应用部分的信息不属于TI 组件规范，TI 不担保其准确性和完整性。客户应负责确定 TI 组件是否适

用于其应用。客户应验证并测试其设计，以确保系统功能。

10.1 Application Information

This section highlights some of the design considerations when implementing this device in various applications.

A PSPICE model for this device is also available in the product page of this device.

10.2 Typical Application

This typical application demonstrates how the TPS22914 and TPS22915 can be used to power downstream

modules.

VIN

VOUT

VIN

VOUT

C_L

C_IN

GND

TPS22914/15

图10-1. Typical Application Schematic

10.2.1 Design Requirements

For this design example, use the input parameters shown in 表10-1.

表10-1. Design Parameters

DESIGN PARAMETER

EXAMPLE VALUE

V_IN

5 V

2 A

Load current

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10.2.2 Detailed Design Procedure

To begin the design process, the designer needs to know the following:

• V_INvoltage

• Load Current

10.2.2.1 VIN to VOUT Voltage Drop

The VIN to VOUT voltage drop in the device is determined by the R_ONof the device and the load current. The

R_ONof the device depends upon the VIN conditions of the device. Refer to the R_ONspecification of the device in

the Electrical Characteristics table of this datasheet. Once the R_ONof the device is determined based upon the

VIN conditions, use 方程式1 to calculate the VIN to VOUT voltage drop.

∆V = I_LOAD× R_ON

(1)

where

• ΔV = voltage drop from VIN to VOUT

• I_LOAD= load current

• R_ON= On-resistance of the device for a specific V_IN

An appropriate I_LOADmust be chosen such that the I_MAXspecification of the device is not violated.

10.2.2.2 Inrush Current

To determine how much inrush current is caused by the C_Lcapacitor, use 方程式2.

dV_OUT

= C_L´

INRUSH

(2)

where

• I_INRUSH= amount of inrush caused by C_L

• C_L= capacitance on VOUT

• dt = rise time in VOUT during the ramp up of VOUT when the device is enabled

• dV_OUT= change in VOUT during the ramp up of VOUT when the device is enabled

An appropriate C_Lvalue must be placed on VOUT such that the I_MAXand I_PLSspecifications of the device are

not violated.

10.2.3 Application Curves

V_IN= 5 V

C_L= 47 µF

V_IN= 5 V

C_L= 47 µF

图10-2. TPS22914B/15B Inrush Current

图10-3. TPS22914C/15C Inrush Current

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11 Power Supply Recommendations

The device is designed to operate from a VIN range of 1.05 V to 5.5 V. This supply must be well regulated and

placed as close to the device terminal as possible with the recommended 1-µF bypass capacitor. If the supply is

located more than a few inches from the device terminals, additional bulk capacitance may be required in

addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or

ceramic capacitor of 1 µF may be sufficient.

12 Layout

12.1 Layout Guidelines

1. VIN and VOUT traces must be as short and wide as possible to accommodate for high current.

2. The VIN pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical

recommended bypass capacitance is 1-μF ceramic with X5R or X7R dielectric. This capacitor must be

placed as close to the device pins as possible.

3. The VOUT pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical

recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.

This capacitor must be placed as close to the device pins as possible.

12.1.1 Thermal Considerations

For best performance, all traces must be as short as possible. To be most effective, the input and output

capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have

on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic

electrical effects along with minimizing the case to ambient thermal impedance.

The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To

calculate the maximum allowable dissipation, P_D(max)for a given output current and ambient temperature, use 方

程式3.

T_J(MAX)- T_A

P_D(MAX)

q_JA

(3)

where

• P_D(MAX)= maximum allowable power dissipation

• T_J(MAX)= maximum allowable junction temperature (125°C for the TPS22914/15)

• T_A= ambient temperature of the device

• θ_JA= junction to air thermal impedance. Refer to the Thermal Information table. This parameter is highly

dependent upon board layout.

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12.2 Layout Example

To GPIO control

GND

V_OUTBypass

VOUT

Capacitor

VIN

V Bypass

Capacitor

VIA to Power Ground Plane

图12-1. Recommended Board Layout

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13 Device and Documentation Support

13.1 Documentation Support

13.1.1 Related Documentation

For related documentation see the following:

• Basics of Load Switches

• Managing Inrush Current

• Load Switch Thermal Considerations

• Using the TPS22915BEVM-078 Single Channel Load Switch IC

• Implementing Ship Mode Using the TPS22915B Load Switches

13.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to sample or buy.

表13-1. Related Links

TECHNICAL

DOCUMENTS

TOOLS &

SOFTWARE

SUPPORT &

COMMUNITY

PARTS

PRODUCT FOLDER

SAMPLE & BUY

TPS22914B

TPS22914C

TPS22915B

TPS22915C

Click here

13.3 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

13.4 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

13.5 Trademarks

超极本^™is a trademark of Intel.

TI E2E^™is a trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

13.6 静电放电警告

静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理

和安装程序，可能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参

数更改都可能会导致器件与其发布的规格不相符。

13.7 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

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10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TPS22914BYFPR

TPS22914BYFPT

TPS22914CYFPR

TPS22914CYFPT

TPS22915BYFPR

TPS22915BYFPT

TPS22915CYFPR

TPS22915CYFPT

ACTIVE

DSBGA

YFP

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

SNAGCU

Level-1-260C-UNLIM

-40 to 105

SNAGCU

3000 RoHS & Green SAC396 | SNAGCU

250 RoHS & Green SAC396 | SNAGCU

3000 RoHS & Green

250 RoHS & Green

SNAGCU

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

6-May-2023

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS22914BYFPR

TPS22914BYFPT

TPS22914CYFPR

TPS22914CYFPT

TPS22915BYFPR

TPS22915BYFPT

TPS22915CYFPR

TPS22915CYFPT

DSBGA

YFP

3000

250

180.0

178.0

180.0

178.0

180.0

178.0

180.0

8.4

9.2

8.4

9.2

8.4

9.2

8.4

0.85

0.64

0.59

0.64

0.59

0.64

0.59

0.64

4.0

8.0

250

3000

250

3000

250

3000

250

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

6-May-2023

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS22914BYFPR

TPS22914BYFPT

TPS22914CYFPR

TPS22914CYFPT

TPS22915BYFPR

TPS22915BYFPT

TPS22915CYFPR

TPS22915CYFPT

DSBGA

YFP

3000

250

182.0

220.0

182.0

220.0

182.0

220.0

182.0

220.0

182.0

220.0

182.0

220.0

182.0

20.0

35.0

20.0

35.0

20.0

35.0

20.0

250

3000

250

3000

250

3000

250

Pack Materials-Page 2

PACKAGE OUTLINE

YFP0004

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

BALL A1

CORNER

0.5 MAX

SEATING PLANE

0.05 C

0.19

0.13

BALL TYP

0.4

TYP

D: Max = 0.778 mm, Min =0.718 mm

E: Max = 0.778 mm, Min =0.718 mm

SYMM

0.4

TYP

0.25

0.21

C A B

0.015

SYMM

4223507/A 01/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

www.ti.com

EXAMPLE BOARD LAYOUT

YFP0004

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

4X ( 0.23)

SYMM

(0.4) TYP

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:50X

0.05 MAX

0.05 MIN

METAL UNDER

SOLDER MASK

(

0.23)

METAL

EXPOSED

(

0.23)

EXPOSED

METAL

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL

NON-SOLDER MASK

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

NOT TO SCALE

4223507/A 01/2017

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.

For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).

www.ti.com

EXAMPLE STENCIL DESIGN

YFP0004

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

(R0.05) TYP

4X ( 0.25)

SYMM

(0.4) TYP

METAL

TYP

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.1 mm THICK STENCIL

SCALE:50X

4223507/A 01/2017

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

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