TPS22915BYFPT [TI]
具有输出放电功能的 5.5V、2A、39mΩ 负载开关 | YFP | 4 | -40 to 105;型号: | TPS22915BYFPT |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有输出放电功能的 5.5V、2A、39mΩ 负载开关 | YFP | 4 | -40 to 105 开关 驱动 接口集成电路 |
文件: | 总32页 (文件大小:1266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPS22914B, TPS22914C, TPS22915B, TPS22915C
SLVSCO0E – JUNE 2014 – REVISED OCTOBER 2020
TPS2291xx, 5.5-V, 2-A, 37-mΩ On-Resistance Load Switch
1 Features
3 Description
•
•
•
Integrated Single Channel Load Switch
Input Voltage Range: 1.05 V to 5.5 V
Low On-Resistance (RON
– RON = 37 mΩ (Typical) at VIN = 5 V
– RON = 38 mΩ (Typical) at VIN = 3.3 V
– RON = 43 mΩ (Typical) at VIN = 1.8 V
2-A Maximum Continuous Switch Current
Low Quiescent Current
The TPS22914/15 is a small, low RON, single channel
load switch with controlled slew rate. The device
contains an N-channel MOSFET that can operate
over an input voltage range of 1.05 V to 5.5 V and can
support a maximum continuous current of 2 A. The
switch is controlled by an on and off input, which is
capable of interfacing directly with low-voltage control
signals.
)
•
•
The small size and low RON makes the device ideal
for being used in space constrained, battery powered
applications. The wide input voltage range of the
switch makes it a versatile solution for many different
voltage rails. The controlled rise time of the device
greatly reduces inrush current caused by large bulk
load capacitances, thereby reducing or eliminating
power supply droop. The TPS22915 further reduces
the total solution size by integrating a 143-Ω pull-
down resistor for quick output discharge (QOD) when
the switch is turned off.
– 7.7 µA (Typical) at VIN = 3.3 V
Low Control Input Threshold Enables Use of 1 V or
Higher GPIO
•
•
Controlled Slew Rate
– tR(TPS22914B/15B) = 64 µs at VIN = 3.3 V
– tR(TPS22914C/15C) = 913 µs at VIN = 3.3 V
Quick Output Discharge (TPS22915 only)
Ultra-Small Wafer-Chip-Scale Package
– 0.78 mm × 0.78 mm, 0.4-mm Pitch,
0.5-mm Height (YFP)
•
•
•
ESD Performance Tested per JESD 22
– 2-kV HBM and 1-kV CDM
The TPS22914/15 is available in a small, space-
saving 0.78 mm x 0.78 mm, 0.4-mm pitch, 0.5-mm
height 4-pin Wafer-Chip-Scale (WCSP) package
(YFP). The device is characterized for operation over
the free-air temperature range of –40°C to +105°C.
2 Applications
•
•
•
•
•
•
Smartphones, Mobile Phones
Ultrathin, Ultrabook™ / Notebook PC
Tablet PC, Phablet
Wearable Technology
Solid State Drives
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS22914B
TPS22914C
DSBGA (4)
0.74 mm x 0.74 mm
Digital Cameras
TPS22915B
TPS22915C
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
80
VIN
ON
VOUT
GND
-40°C
25°C
85°C
Power Supply
ON
70
60
50
40
30
20
CIN
CL
RL
105°C
OFF
TPS22914/15
GND
Simplified Schematic
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D005
RON vs VIN (IOUT = –200 mA)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22914B, TPS22914C, TPS22915B, TPS22915C
SLVSCO0E – JUNE 2014 – REVISED OCTOBER 2020
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Switching Characteristics............................................8
7.7 Typical DC Characteristics..........................................9
7.8 Typical AC Characteristics (TPS22914B/15B)..........11
7.9 Typical AC Characteristics (TPS22914C/15C)......... 14
8 Parameter Measurement Information..........................16
9 Detailed Description......................................................17
9.1 Overview...................................................................17
9.2 Functional Block Diagram.........................................17
9.3 Feature Description...................................................17
9.4 Device Functional Modes..........................................18
10 Application and Implementation................................19
10.1 Application Information........................................... 19
10.2 Typical Application.................................................. 19
11 Power Supply Recommendations..............................21
12 Layout...........................................................................21
12.1 Layout Guidelines................................................... 21
12.2 Layout Example...................................................... 22
13 Device and Documentation Support..........................23
13.1 Documentation Support.......................................... 23
13.2 Related Links.......................................................... 23
13.3 Receiving Notification of Documentation Updates..23
13.4 Support Resources................................................. 23
13.5 Trademarks.............................................................23
13.6 Electrostatic Discharge Caution..............................23
13.7 Glossary..................................................................23
14 Mechanical, Packaging, and Orderable
Information.................................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (September 2016) to Revision E (October 2020)
Page
•
•
Updated the numbering format for tables, figures and cross-references throughout the document...................1
Updated the body size in the Device Information table...................................................................................... 1
Changes from Revision C (July 2015) to Revision D (September 2016)
Page
•
Changed "TPS22915B" only, to "TPS22915B/C only" in the Electrical Characteristics table ............................5
Changes from Revision B (September 2014) to Revision C (July 2015)
Page
•
Updated TA ratings in datasheet from 85°C to 105°C.........................................................................................1
Changes from Revision A (June 2014) to Revision B (September 2014)
Page
•
Updated X-axis scales in th Typical Characteristics section. .............................................................................9
Changes from Revision * (June 2014) to Revision A (June 2014)
Page
•
Initial release of full version. .............................................................................................................................. 1
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SLVSCO0E – JUNE 2014 – REVISED OCTOBER 2020
5 Device Comparison Table
RON at 3.3V
DEVICE
tR at 3.3V
(TYPICAL)
QUICK OUTPUT
DISCHARGE
MAXIMUM OUTPUT
CURRENT
ENABLE
(TYPICAL)
TPS22914B
TPS22914C
TPS22915B
TPS22915C
38 mΩ
38 mΩ
38 mΩ
38 mΩ
64 µs
913 µs
64 µs
No
No
2 A
2 A
2 A
2 A
Active High
Active High
Active High
Active High
Yes
Yes
913 µs
6 Pin Configuration and Functions
B
B
A
A
1
2
2
1
LASER MARKING VIEW
BUMP VIEW
Figure 6-1. YFP PACKAGE 4 PIN DSBGA TOP VIEW
Table 6-1. Pin Description
B
A
ON
VIN
2
GND
VOUT
1
Table 6-2. Pin Functions
PIN
NAME
TYPE
DESCRIPTION
NO.
A1
O
Switch output. Place ceramic bypass capacitor(s) between this pin
and GND. See the Detailed Description section for more information
VOUT
VIN
I
Switch input. Place ceramic bypass capacitor(s) between this pin and
GND. See the Detailed Description section for more information
A2
B1
B2
GND
ON
—
I
Device ground
Active high switch control input. Do not leave floating
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
–0.3
–0.3
–0.3
MAX
6
UNIT
V
VIN
Input voltage
VOUT
VON
IMAX
IPLS
TJ
Output voltage
6
V
ON voltage
6
V
Maximum continuous switch current
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle
Maximum junction temperature
Storage temperature
2
A
2.5
125
150
A
°C
°C
TSTG
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
±2000
±1000
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Electrostatic
discharge
V(ESD)
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN
1.05
MAX
5.5
UNIT
V
VIN
Input voltage
VON
ON voltage
0
5.5
VIN
5.5
0.5
105
V
VOUT
VIH, ON
VIL, ON
TA
Output voltage
V
High-level input voltage, ON
Low-level input voltage, ON
Operating free-air temperature range(1)
Input Capacitor
VIN = 1.05 V to 5.5 V
VIN = 1.05 V to 5.5 V
1
0
V
V
–40
1(2)
°C
µF
CIN
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature
may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [T
J(MAX)], the maximum power dissipation of the device in the application [PD(MAX)], and the junction-to-ambient thermal resistance of the
part/package in the application (θJA), as given by the following equation: TA(MAX) = TJ(MAX) – (θJA × PD(MAX)).
(2) Refer to the Detailed Description section.
7.4 Thermal Information
TPS2291x
THERMAL METRIC(1)
YFP (DSBGA)
UNIT
4 PINS
193
2.3
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
36
ψJT
12
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7.4 Thermal Information (continued)
TPS2291x
THERMAL METRIC(1)
YFP (DSBGA)
4 PINS
UNIT
ψJB
Junction-to-board characterization parameter
36
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
7.7
7.6
7.7
8.4
7.4
6.7
7.7
7.6
7.7
8.4
7.4
6.7
10.8
12.1
9.6
VIN = 5.5 V
VIN = 5 V
11.9
9.6
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
VIN = 5.5 V
VIN = 5 V
12
Quiescent current
(TPS22914B/15B)
VON = 5 V, IOUT = 0 A
µA
11
13.5
10.4
13.9
10.9
11.7
11.5
14.1
11.1
13.7
10.7
13.3
11.7
13.4
11
IQ, VIN
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
Quiescent current
(TPS22914C/15C)
VON = 5 V, IOUT = 0 A
µA
12.8
10.9
10.9
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
0.5
0.5
0.5
0.5
0.4
0.4
2
3
VIN = 5.5 V
2
VIN = 5.0 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
3
2
3
ISD, VIN
Shutdown current
VON = 0 V, VOUT = 0 V
µA
2
3
2
3
2
3
ION
ON pin input leakage
current
VIN = 5.5 V, IOUT = 0 A
0.1
µA
–40°C to +105°C
25°C
37
37
37
38
38
43
52
63
40
VIN = 5.5 V, IOUT = –200 mA
VIN = 5 V, IOUT = –200 mA
VIN = 4.2 V, IOUT = –200 mA
VIN = 3.3 V, IOUT = –200 mA
VIN = 2.5 V, IOUT = –200 mA
VIN = 1.8 V, IOUT = –200 mA
VIN = 1.2 V, IOUT = –200 mA
VIN = 1.05 V, IOUT = –200 mA
–40°C to +85°C
–40°C to +105°C
25°C
51 mΩ
57
41
–40°C to +85°C
–40°C to +105°C
25°C
51 mΩ
57
41
–40°C to +85°C
–40°C to +105°C
25°C
52 mΩ
58
41
–40°C to +85°C
–40°C to +105°C
25°C
52 mΩ
59
RON
On-resistance
42
–40°C to +85°C
–40°C to +105°C
25°C
53 mΩ
58
48
–40°C to +85°C
–40°C to +105°C
25°C
59 mΩ
66
61
–40°C to +85°C
–40°C to +105°C
25°C
73 mΩ
85
96
–40°C to +85°C
–40°C to +105°C
102 mΩ
107
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
VIN = 5.5 V
VIN = 5 V
102
100
98
VIN = 3.3 V
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
VHYS
ON pin hysteresis
25°C
96
96
mV
Ω
94
92
(1)
RPD
Output pull down resistor
VIN = VOUT = 3.3 V, VON = 0 V
–40°C to +105°C
143
200
(1) TPS22915B/C only.
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7.6 Switching Characteristics
Refer to the timing test circuit in Figure 8-1 (unless otherwise noted) for references to external components used for the test
condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up
sequence where VIN is already in steady state condition before the ON pin is asserted high.
TYP
TYP
PARAMETER
TEST CONDITION
UNIT
(TPS22914B/15B) (TPS22914C/15C)
VIN = 5 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
104
2
1300
2
µs
µs
µs
µs
µs
89
2
1277
2
tF
tD
59
663
VIN = 3.3 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
83
2
1077
2
µs
µs
µs
µs
µs
64
2
913
2
tF
tD
52
622
VIN = 1.05 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
61
3
752
3
µs
µs
µs
µs
µs
28
2
409
2
tF
tD
47
547
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7.7 Typical DC Characteristics
11
10
9
11
10
9
8
8
7
7
6
6
5
5
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
4
4
3
3
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D001
D002
VON = 5 V
IOUT = 0 A
VON = 5 V
IOUT = 0 A
Figure 7-1. IQ vs VIN (TPS22914B/15B)
Figure 7-2. IQ vs VIN (TPS22914C/15C)
2.8
2.4
2
80
70
60
50
40
30
20
10
0
-40°C
25°C
85°C
105°C
1.6
1.2
0.8
0.4
0
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.2V
VIN = 5V
VIN = 5.5V
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (èC)
D003
D004
VON = 0 V
IOUT = 0 A
VON = 5 V
IOUT = –200 mA
Figure 7-3. ISD vs VIN
Figure 7-4. RON vs TJ
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80
80
70
60
50
40
30
20
10
0
-40°C
25°C
85°C
105°C
70
60
50
40
30
20
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.2V
VIN = 5V
VIN = 5.5V
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
0
0.5
1
IOUT (A)
1.5
2
D005
D006
VON = 5 V
IOUT = –200 mA
VON = 5 V
TA = 25°C
Figure 7-5. RON vs VIN
Figure 7-6. RON vs IOUT
1
0.95
0.9
1
-40°C
0.95
0.9
25°C
85°C
105°C
0.85
0.8
0.85
0.8
0.75
0.7
0.75
0.7
0.65
0.6
0.65
0.6
-40°C
25°C
85°C
105°C
0.55
0.5
0.55
0.5
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D007
D008
IOUT = 0 A
IOUT = 0 A
Figure 7-8. VIH vs VIN
Figure 7-7. VIL vs VIN
170
160
150
140
130
120
110
100
90
190
185
180
175
170
165
160
155
150
145
140
-40°C
25°C
85°C
-40°C
25°C
85°C
105°C
105°C
80
70
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D009
D010
IOUT = 0 A
VIN = VOUT
VON = 0 V
Figure 7-9. VHYS vs VIN
Figure 7-10. RPD vs VIN
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7.8 Typical AC Characteristics (TPS22914B/15B)
100
90
80
70
60
50
70
65
60
55
50
45
40
35
40
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
30
20
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D011
D012
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-11. tR vs VIN
Figure 7-12. tD vs VIN
5
4.5
4
5
4.5
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0.5
0
0.5
0
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D013
D014
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-13. tF vs VIN
Figure 7-14. tOFF vs VIN
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120
110
100
90
80
70
-40°C
25°C
85°C
105°C
60
50
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D015
VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-15. tON vs VIN
Figure 7-16. tR at VIN = 5 V
VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-17. tF at VIN = 5 V
Figure 7-18. tR at VIN = 3.3 V
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-19. tF at VIN = 3.3V
Figure 7-20. tR at VIN = 1.05V
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VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-21. tF at VIN = 1.05 V
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7.9 Typical AC Characteristics (TPS22914C/15C)
1500
1300
1100
900
750
700
650
600
550
500
450
700
-40°C
-40°C
25°C
85°C
105°C
25°C
85°C
105°C
500
300
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D016
D017
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-22. tR vs VIN
Figure 7-23. tD vs VIN
5
4.5
4
5
4.5
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0.5
0
0.5
0
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D018
D019
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-24. tF vs VIN
Figure 7-25. tOFF vs VIN
1600
1400
1200
1000
800
-40°C
25°C
85°C
105°C
600
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D020
VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
RL = 10 Ω
CL = 0.1 µF
Figure 7-26. tON vs VIN
Figure 7-27. tR at VIN = 5 V
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VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-28. tF at VIN = 5 V
Figure 7-29. tR at VIN = 3.3 V
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-30. tF at VIN = 3.3 V
Figure 7-31. tR at VIN = 1.05 V
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
Figure 7-32. tF at VIN = 1.05 V
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8 Parameter Measurement Information
VIN
VOUT
CIN = 1 µF
CL
+
-
RL
ON
ON
(A)
GND
TPS22914/15
OFF
GND
GND
A. Rise and fall times of the control signal is 100ns
Figure 8-1. Test Circuit
VON
50%
50%
tF
tOFF
tR
tON
90%
90%
VOUT
VOUT
50%
10%
50%
10%
10%
tD
Figure 8-2. Timing Waveforms
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9 Detailed Description
9.1 Overview
The device is a 5.5-V, 2-A load switch in a 4-pin YFP package. To reduce voltage drop for low voltage and high
current rails, the device implements an ultra-low resistance N-channel MOSFET which reduces the drop out
voltage through the device.
The device has a controlled and fixed slew rate which helps reduce or eliminate power supply droop due to large
inrush currents. During shutdown, the device has very low leakage currents, thereby reducing unnecessary
leakages for downstream modules during standby. Integrated control logic, driver, charge pump, and output
discharge FET eliminates the need for any external components, which reduces solution size and bill of
materials (BOM) count.
9.2 Functional Block Diagram
9.3 Feature Description
9.3.1 On and Off Control
The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1 V or higher GPIO voltage. This pin cannot
be left floating and must be driven either high or low for proper functionality.
9.3.2 Input Capacitor (CIN)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF
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ceramic capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further
reduce the voltage drop during high-current application. When switching heavy loads, it is recommended to have
an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
9.3.3 Output Capacitor (CL)
Due to the integrated body diode in the MOSFET, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip
caused by inrush currents during startup.
9.4 Device Functional Modes
Table 9-1 describes the connection of the VOUT pin depending on the state of the ON pin.
Table 9-1. VOUT Connection
ON
L
TPS22914
Open
TPS22915
GND
H
VIN
VIN
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
10.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
A PSPICE model for this device is also available in the product page of this device.
10.2 Typical Application
This typical application demonstrates how the TPS22914 and TPS22915 can be used to power downstream
modules.
VIN
VOUT
VIN
VOUT
CL
CIN
GND
ON
ON
TPS22914/15
Figure 10-1. Typical Application Schematic
10.2.1 Design Requirements
For this design example, use the input parameters shown in Table 10-1.
Table 10-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
5 V
2 A
Load current
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10.2.2 Detailed Design Procedure
To begin the design process, the designer needs to know the following:
•
•
VIN voltage
Load Current
10.2.2.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The R
ON of the device depends upon the VIN conditions of the device. Refer to the RON specification of the device in
the Electrical Characteristics table of this datasheet. Once the RON of the device is determined based upon the
VIN conditions, use Equation 1 to calculate the VIN to VOUT voltage drop.
∆V = ILOAD × RON
(1)
where
•
•
•
ΔV = voltage drop from VIN to VOUT
ILOAD = load current
RON = On-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
10.2.2.2 Inrush Current
To determine how much inrush current is caused by the CL capacitor, use Equation 2.
dVOUT
I
= CL ´
INRUSH
dt
(2)
where
•
•
•
•
IINRUSH = amount of inrush caused by CL
CL = capacitance on VOUT
dt = rise time in VOUT during the ramp up of VOUT when the device is enabled
dVOUT = change in VOUT during the ramp up of VOUT when the device is enabled
An appropriate CL value must be placed on VOUT such that the IMAX and IPLS specifications of the device are
not violated.
10.2.3 Application Curves
VIN = 5 V
CL = 47 µF
VIN = 5 V
CL = 47 µF
Figure 10-2. TPS22914B/15B Inrush Current
Figure 10-3. TPS22914C/15C Inrush Current
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11 Power Supply Recommendations
The device is designed to operate from a VIN range of 1.05 V to 5.5 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1-µF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 1 µF may be sufficient.
12 Layout
12.1 Layout Guidelines
1. VIN and VOUT traces must be as short and wide as possible to accommodate for high current.
2. The VIN pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is 1-μF ceramic with X5R or X7R dielectric. This capacitor must be placed
as close to the device pins as possible.
3. The VOUT pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.
This capacitor must be placed as close to the device pins as possible.
12.1.1 Thermal Considerations
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
Equation 3.
TJ(MAX) - TA
PD(MAX)
=
qJA
(3)
where
•
•
•
•
PD(MAX) = maximum allowable power dissipation
TJ(MAX) = maximum allowable junction temperature (125°C for the TPS22914/15)
TA = ambient temperature of the device
θJA = junction to air thermal impedance. Refer to the Thermal Information table. This parameter is highly
dependent upon board layout.
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12.2 Layout Example
To GPIO control
ON
GND
VOUTBypass
Capacitor
VIN
VOUT
V Bypass
IN
Capacitor
VIA to Power Ground Plane
Figure 12-1. Recommended Board Layout
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
•
•
•
•
•
Basics of Load Switches
Managing Inrush Current
Load Switch Thermal Considerations
Using the TPS22915BEVM-078 Single Channel Load Switch IC
Implementing Ship Mode Using the TPS22915B Load Switches
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 13-1. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TPS22914B
TPS22914C
TPS22915B
TPS22915C
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
Ultrabook™ is a trademark of Intel.
TI E2E™ is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22914BYFPR
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
SNAGCU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
S3
S3
S6
S6
S4
S4
S7
S7
SNAGCU
SNAGCU
SNAGCU
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
3000 RoHS & Green
250 RoHS & Green
SNAGCU
SNAGCU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
6-May-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS22914BYFPR
TPS22914BYFPT
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPR
TPS22915BYFPT
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
4
4
4
3000
250
180.0
180.0
178.0
180.0
180.0
180.0
178.0
180.0
178.0
180.0
180.0
8.4
8.4
9.2
8.4
8.4
8.4
9.2
8.4
9.2
8.4
8.4
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.64
0.64
0.59
0.64
0.64
0.64
0.59
0.64
0.59
0.64
0.64
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
250
3000
250
3000
3000
250
250
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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6-May-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS22914BYFPR
TPS22914BYFPT
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPR
TPS22915BYFPT
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
4
4
4
3000
250
182.0
182.0
220.0
182.0
182.0
182.0
220.0
182.0
220.0
182.0
182.0
182.0
182.0
220.0
182.0
182.0
182.0
220.0
182.0
220.0
182.0
182.0
20.0
20.0
35.0
20.0
20.0
20.0
35.0
20.0
35.0
20.0
20.0
250
3000
250
3000
3000
250
250
3000
250
Pack Materials-Page 2
PACKAGE OUTLINE
YFP0004
DSBGA - 0.5 mm max height
S
C
A
L
E
1
0
.
0
0
0
DIE SIZE BALL GRID ARRAY
B
E
A
D
BALL A1
CORNER
C
0.5 MAX
SEATING PLANE
0.05 C
0.19
0.13
BALL TYP
0.4
TYP
B
A
D: Max = 0.778 mm, Min =0.718 mm
E: Max = 0.778 mm, Min =0.718 mm
SYMM
0.4
TYP
0.25
0.21
C A B
4X
0.015
1
2
SYMM
4223507/A 01/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
YFP0004
DSBGA - 0.5 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
4X ( 0.23)
1
2
A
B
SYMM
(0.4) TYP
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:50X
0.05 MAX
0.05 MIN
METAL UNDER
SOLDER MASK
(
0.23)
METAL
EXPOSED
(
0.23)
EXPOSED
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
NON-SOLDER MASK
SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4223507/A 01/2017
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
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EXAMPLE STENCIL DESIGN
YFP0004
DSBGA - 0.5 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
(R0.05) TYP
4X ( 0.25)
1
2
A
B
SYMM
(0.4) TYP
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
4223507/A 01/2017
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
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