TPD1E01B04-Q1 [TI]

适用于 USB 和 FPD-Link 且采用 0402 封装的汽车类 0.18pF、±3.6V、±15kV ESD 保护二极管;
TPD1E01B04-Q1
型号: TPD1E01B04-Q1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

适用于 USB 和 FPD-Link 且采用 0402 封装的汽车类 0.18pF、±3.6V、±15kV ESD 保护二极管

光电二极管
文件: 总15页 (文件大小:1073K)
中文:  中文翻译
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TPD1E01B04-Q1  
ZHCSN54A MAY 2021 REVISED DECEMBER 2021  
TPD1E01B04-Q1 0402 封装的汽车0.2pF±3.6V±15kV  
ESD 保护二极管  
1 特性  
3 说明  
IEC 61000-4-2 4 ESD 保护  
TPD1E01B04-Q1 是一款双向 TVS ESD 保护二极管,  
用于为 USB Type-C FPD-Link 电路提供保护。  
TPD1E01B04-Q1 的额定 ESD 冲击消散值等于 IEC  
61000-4-2 国际标准4 规定的最高水平。  
±15kV 接触放电  
±17kV 空气间隙放电  
IEC 61000-4-4 EFT 保护  
80A (5/50ns)  
IEC 61000-4-5 浪涌保护  
2.5A (8/20µs)  
该器件采用一0.20pF典型值IO 电容适用于  
保护速率高达 20Gbps 的高速接口例如 USB 3.1  
Gen2 FPD-Link。低动态电阻和低钳位电压确保  
系统级抗瞬变事件保护。  
IO 电容:  
0.20pF典型值)  
0.23pF最大值)  
• 直流击穿电压6.4V典型值)  
• 超低泄漏电流10nA最大值)  
ESD 钳位电压16A TLP 15V  
• 低插入损耗20 GHz  
TPD1E01B04-Q1 采用业界通用0402 (DPY) 封装。  
器件信息(1)  
封装尺寸标称值)  
器件型号  
封装  
X1SON (2)  
TPD1E01B04-Q1  
1.00mm x 0.60mm  
(1) 如需了解所有可用封装请参阅数据表末尾的可订购产品附  
录。  
• 支持速率高20Gbps 的高速接口  
• 业界通0402 封装  
• 符AEC-Q101 标准  
USB Type-C  
Connector  
– 器HBM 分类等H2  
– 器CDM 分类等C5  
– 器件工作温度范围40°C +125°C  
SSRX1P  
TPD1E01B04-Q1 (x4)  
SSRX1N  
SSTX1P  
2 应用  
SSTX1N  
TPD4E05U06-Q1  
• 终端设备  
VBUS  
SBU2  
环视系统  
ADAS 视觉系统  
后视摄像头  
信息娱乐系统与仪表组  
车身控制模块  
音响主机  
CC1  
DPT  
DMT  
DMB  
TPD4E05U06-Q1  
• 接口  
DPB  
– 汽车串行器/解串器FPD-Link  
USB Type-C  
SBU1  
USB 3.1 Gen 2/3.0/2.0  
HDMI 2.0/1.4  
CC2  
VBUS  
10/100/1000Mbps 以太网  
SSRX2N  
SSRX2P  
SSTX2N  
TPD1E01B04-Q1 (x4)  
SSTX2P  
典型应用  
本文档旨在为方便起见提供有TI 产品中文版本的信息以确认产品的概要。有关适用的官方英文版本的最新信息请访问  
www.ti.com其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前请务必参考最新版本的英文版本。  
English Data Sheet: SLVSG26  
 
 
 
 
TPD1E01B04-Q1  
ZHCSN54A MAY 2021 REVISED DECEMBER 2021  
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Table of Contents  
7.4 Device Functional Modes............................................9  
8 Application and Implementation....................................9  
8.1 Application Information............................................... 9  
8.2 Typical Application...................................................... 9  
9 Power Supply Recommendations................................10  
10 Layout...........................................................................11  
10.1 Layout Guidelines................................................... 11  
10.2 Layout Example...................................................... 11  
11 Device and Documentation Support..........................12  
11.1 Documentation Support.......................................... 12  
11.2 接收文档更新通知................................................... 12  
11.3 支持资源..................................................................12  
11.4 Trademarks............................................................. 12  
11.5 Electrostatic Discharge Caution..............................12  
11.6 术语表..................................................................... 12  
12 Mechanical, Packaging, and Orderable  
1 特性................................................................................... 1  
2 应用................................................................................... 1  
3 说明................................................................................... 1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 4  
6.1 Absolute Maximum Ratings........................................ 4  
6.2 ESD RatingsAEC Specification...............................4  
6.3 ESD RatingsIEC Specification................................ 4  
6.4 ESD RatingsISO Specification................................ 4  
6.5 Recommended Operating Conditions.........................4  
6.6 Thermal Information....................................................4  
6.7 Electrical Characteristics.............................................5  
6.8 Typical Characteristics................................................6  
7 Detailed Description........................................................8  
7.1 Overview.....................................................................8  
7.2 Functional Block Diagram...........................................8  
7.3 Feature Description.....................................................8  
Information.................................................................... 12  
4 Revision History  
以前版本的页码可能与当前版本的页码不同  
Changes from Revision * (May 2021) to Revision A (December 2021)  
Page  
• 将数据表的状态从预告信更改为量产数..................................................................................................... 1  
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5 Pin Configuration and Functions  
1
2
5-1. DPY Package 2-Pin X1SON Top View  
5-1. Pin Functions  
PIN  
TYPE(1)  
DESCRIPTION  
NO.  
NAME  
IO  
1
2
I/O  
I/O  
ESD Protected Channel. If used as ESD IO, connect pin 2 to ground  
ESD Protected Channel. If used as ESD IO, connect pin 1 to ground  
IO  
(1) I = input, O = output  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
UNIT  
A
Electrical fast transient  
Peak pulse  
IEC 61000-4-5 (5/50 ns) at 25°C  
IEC 61000-4-5 power (tp - 8/20 µs) at 25°C  
IEC 61000-4-5 current (tp - 8/20 µs) at 25°C  
Operating free-air temperature  
80  
27  
W
2.5  
125  
155  
A
TA  
°C  
°C  
40  
65  
Tstg  
Storage temperature  
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply  
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If  
briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not  
sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,  
performance, and shorten the device lifetime.  
6.2 ESD RatingsAEC Specification  
VALUE  
±2500  
±1000  
UNIT  
Human body model (HBM), per AEC Q101-001  
Charged device model (CDM), per AEC Q101-005  
V(ESD)  
Electrostatic discharge  
V
6.3 ESD RatingsIEC Specification  
VALUE  
±15000  
±17000  
UNIT  
IEC 61000-4-2 Contact Discharge, all pins  
IEC 61000-4-2 Air-gap Discharge, all pins  
V(ESD)  
Electrostatic discharge  
V
6.4 ESD RatingsISO Specification  
VALUE  
± 12500  
±15000  
UNIT  
Contact discharge  
Air-gap discharge  
V(ESD)  
Electrostatic discharge  
V
ISO 10605, 330-pF, 330-, IO  
6.5 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
NOM  
MAX  
3.6  
UNIT  
V
VIO  
TA  
Input pin voltage  
3.6  
40  
Operating free-air temperature  
125  
°C  
6.6 Thermal Information  
TPD1E01B04-Q1  
DPY (X1SON)  
2 PINS  
THERMAL METRIC(1)  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ΨJT  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
442.6  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
243.8  
Junction-to-board thermal resistance  
162.5  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
154.1  
163.0  
ΨJB  
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6.6 Thermal Information (continued)  
TPD1E01B04-Q1  
THERMAL METRIC(1)  
DPY (X1SON)  
2 PINS  
UNIT  
RθJC(bot)  
Junction-to-case (bottom) thermal resistance  
n/a  
°C/W  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.7 Electrical Characteristics  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
VRWM  
VBRF  
Reverse stand-off voltage  
IIO < 10 nA  
3.6  
V
V
3.6  
Breakdown voltage, IO pin to GND  
Measured as the maximum voltage  
before device snaps back into  
VHOLD voltage  
6.4  
VBRR  
Breakdown voltage, GND to IO pin  
Holding voltage  
V
V
6.4  
VHOLD  
IIO = 1 mA, TA = 25°C  
5
5.9  
7
6.5  
IPP = 1 A, TLP, from IO to GND  
IPP = 5 A, TLP, from IO to GND  
IPP = 16 A, TLP, from IO to GND  
IPP = 1 A, TLP, from GND to IO  
IPP = 5 A, TLP, from GND to IO  
IPP = 16 A, TLP, from GND to IO  
VIO = ±2.5 V  
9.2  
15  
7
VCLAMP Clamping voltage  
V
9.2  
15  
ILEAK  
RDYN  
Leakage current, IO to GND  
10  
nA  
IO to GND  
0.57  
0.57  
Dynamic resistance  
Line capacitance  
Ω
GND to IO  
VIO = 0 V, f = 1 MHz, IO to GND, TA  
= 25°C  
CL  
0.2  
0.23  
pF  
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6.8 Typical Characteristics  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
6
6
3
3
0
0
-3  
-3  
0
3
6
9
12 15  
Voltage (V)  
18  
21  
24  
27  
0
3
6
9
12 15  
Voltage (V)  
18  
21  
24  
27  
D001  
D002  
6-1. Positive TLP Curve  
6-2. Negative TLP Curve  
110  
10  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-10  
-10  
0
10 20 30 40 50 60 70 80 90 100  
Time (ns)  
-10  
0
10 20 30 40 50 60 70 80 90 100  
Time (ns)  
D003  
D004  
6-3. 8-kV IEC Waveform  
6-4. 8-kV IEC Waveform  
30  
27.5  
25  
3.6  
3.3  
3
0.4  
Power  
Current  
0.35  
0.3  
22.5  
20  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
17.5  
15  
0.25  
0.2  
12.5  
10  
0.15  
0.1  
7.5  
5
-40èC  
25èC  
85èC  
125èC  
2.5  
0
0.05  
0
-2.5  
-0.3  
-5  
0
5
10 15 20 25 30 35 40 45 50 55 60  
Time (ms)  
D005  
0
0.4  
0.8  
1.2  
1.6 2  
Voltage Bias (V)  
2.4  
2.8  
3.2  
3.6  
6-5. Surge Curve (tp = 8/20µs), IO pin to GND  
D006  
6-6. Capacitance vs. Bias Voltage  
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6.8 Typical Characteristics (continued)  
0.4  
0.35  
0.3  
1000  
800  
600  
400  
200  
0
0.25  
0.2  
0.15  
0.1  
-40èC  
25èC  
85èC  
125èC  
0.05  
0
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (èC)  
0
0.4  
0.8  
1.2  
1.6 2  
Voltage Bias (V)  
2.4  
2.8  
3.2  
3.6  
D007  
D006  
6-8. Leakage Current vs. Temperature  
6-7. Capacitance vs. Bias Voltage (DPY Package)  
1
0.8  
0.6  
0.4  
0.2  
0
0.3  
0.27  
0.24  
0.21  
0.18  
0.15  
0.12  
0.09  
0.06  
0.03  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
DPY Package  
-7 -6 -5 -4 -3 -2 -1  
0
Voltage (V)  
1
2
3
4
5
6
7
2
7
12 17  
Frequency (GHz)  
22  
27  
30  
D001  
6-9. DC Voltage Sweep I-V Curve  
6-10. Capacitance vs. Frequency  
0.5  
0
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
-3.5  
DPY Package  
-4  
0.1  
0.2 0.3 0.50.7  
1
2
3
Frequency (GHz)  
4 5 678 10  
20 30 40  
6-11. Insertion Loss  
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7 Detailed Description  
7.1 Overview  
The TPD1E01B04-Q1 device is a bidirectional ESD Protection Diode with ultra-low capacitance. This device can  
dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The  
ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins including  
Thunderbolt 3. The low capacitance allows for extremely low losses even at RF frequencies such as USB 3.1  
Gen 2, Thunderbolt 3, or antenna applications.  
7.2 Functional Block Diagram  
IO  
GND  
Copyright © 2016, Texas Instruments Incorporated  
7.3 Feature Description  
7.3.1 IEC 61000-4-2 ESD Protection  
The I/O pins can withstand ESD events up to ±15-kV contact and ±17-kV air gap. An ESD-surge clamp diverts  
the current to ground.  
7.3.2 IEC 61000-4-4 EFT Protection  
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω  
impedance). An ESD-surge clamp diverts the current to ground.  
7.3.3 IEC 61000-4-5 Surge Protection  
The I/O pins can withstand surge events up to 2.5 A and 27 W (8/20 µs waveform). An ESD-surge clamp diverts  
this current to ground.  
7.3.4 IO Capacitance  
The capacitance between each I/O pin to ground is 0.2 pF (typical) and 0.23 pF (maximum). This device  
supports data rates up to 20 Gbps.  
7.3.5 DC Breakdown Voltage  
The DC breakdown voltage of each I/O pin is ±6.4 V (typical). This ensures that sensitive equipment is protected  
from surges above the reverse standoff voltage of ±3.6 V.  
7.3.6 Ultra Low Leakage Current  
The I/O pins feature an ultra-low leakage current of 10 nA (maximum) at a bias voltage of ±2.5 V.  
7.3.7 Low ESD Clamping Voltage  
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 9.2 V (IPP = 5 A).  
7.3.8 Supports High Speed Interfaces  
This device is capable of supporting high speed interfaces up to 20 Gbps, because of the extremely low IO  
capacitance.  
7.3.9 Industrial Temperature Range  
This device features an industrial operating range of 40°C to +125°C.  
7.3.10 Easy Flow-Through Routing Package  
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers  
flow-through routing, requiring minimal modification to an existing layout.  
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7.4 Device Functional Modes  
The TPD1E01B04-Q1 device is a passive integrated circuit that triggers when voltages are above VBRF or below  
VBRR. During ESD events, voltages as high as ±17 kV (air) can be directed to ground through the internal diode  
network. When the voltages on the protected line fall below the trigger levels of TPD1E01B04-Q1 (usually within  
10s of nano-seconds) the device reverts to passive.  
8 Application and Implementation  
备注  
以下应用部分中的信息不属TI 器件规格的范围TI 不担保其准确性和完整性。TI 的客 户应负责确定  
器件是否适用于其应用。客户应验证并测试其设计以确保系统功能。  
8.1 Application Information  
The TPD1E01B04-Q1 is a diode type TVS which is used to provide a path to ground for dissipating ESD events  
on high-speed signal lines between a human interface connector and a system. As the current from ESD passes  
through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the  
protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.  
8.2 Typical Application  
USB Type-C  
Connector  
SSRX1P  
TPD1E01B04-Q1 (x4)  
SSRX1N  
SSTX1P  
SSTX1N  
TPD4E05U06-Q1  
VBUS  
SBU2  
CC1  
DPT  
DMT  
DMB  
TPD4E05U06-Q1  
DPB  
SBU1  
CC2  
VBUS  
SSRX2N  
SSRX2P  
SSTX2N  
TPD1E01B04-Q1 (x4)  
SSTX2P  
8-1. USB Type-C for Thunderbolt 3 ESD Schematic  
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8.2.1 Design Requirements  
For this design example eight TPD1E01B04-Q1 devices and two TPD4E05U06-Q1 devices are being used in a  
USB Type-C for Thunderbolt 3 application. This provides a complete ESD protection scheme.  
Given the Thunderbolt 3 application, the parameters listed in 8-1 are known.  
8-1. Design Parameters  
DESIGN PARAMETER  
VALUE  
0 V to 3.6 V  
up to 10 GHz  
0 V to 5 V  
Signal range on superspeed Lines  
Operating frequency on superspeed Lines  
Signal range on CC, SBU, and DP/DM Lines  
Operating frequency on CC, SBU, and DP/DM Lines  
up to 480 MHz  
8.2.2 Detailed Design Procedure  
8.2.2.1 Signal Range  
The TPD1E01B04-Q1 supports signal ranges between 3.6 V and 3.6 V, which supports the SuperSpeed pairs  
on the USB Type-C application. The TPD4E05U06-Q1 supports signal ranges between 0 V and 5.5 V, which  
supports the CC, SBU, and DP-DM lines.  
8.2.2.2 Operating Frequency  
The TPD1E01B04-Q1 has a 0.2 pF (typical) capacitance, which supports the Thunderbolt 3 data rates of 20  
Gbps. The TPD4E05U06-Q1 has a 0.5-pF (typical) capacitance, which easily supports the CC, SBU, and DP-  
DM data rates.  
8.2.3 Application Curves  
8-2. USB 3.1 Gen 2 10-Gbps Eye Diagram (Bare 8-3. USB 3.1 Gen 2 10-Gbps Eye Diagram (with  
Board)  
TPD1E01B04-Q1)  
9 Power Supply Recommendations  
This device is a passive ESD device so there is no need to power it. Take care not to violate the recommended  
I/O specification to ensure the device functions properly.  
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10 Layout  
10.1 Layout Guidelines  
The optimum placement is as close to the connector as possible.  
EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,  
resulting in early system failures.  
The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away  
from the protected traces which are between the TVS and the connector.  
Route the protected traces as straight as possible.  
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded  
corners with the largest radii possible.  
Electric fields tend to build up on corners, increasing EMI coupling.  
10.2 Layout Example  
10-1. USB Type-C Mid-Mount, Hybrid Connector ESD Layout  
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11 Device and Documentation Support  
11.1 Documentation Support  
11.1.1 Related Documentation  
For related documentation, see the following:  
Texas Instruments, Generic ESD Evaluation Module user's guide  
11.2 接收文档更新通知  
要接收文档更新通知请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册即可每周接收产品信息更  
改摘要。有关更改的详细信息请查看任何已修订文档中包含的修订历史记录。  
11.3 支持资源  
TI E2E支持论坛是工程师的重要参考资料可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解  
答或提出自己的问题可获得所需的快速设计帮助。  
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范并且不一定反映 TI 的观点请参阅  
TI 《使用条款》。  
11.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
所有商标均为其各自所有者的财产。  
11.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
11.6 术语表  
TI 术语表  
本术语表列出并解释了术语、首字母缩略词和定义。  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2022 Texas Instruments Incorporated  
12  
Submit Document Feedback  
Product Folder Links: TPD1E01B04-Q1  
 
 
 
 
 
 
 
 
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jan-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPD1E01B04DPYRQ1  
ACTIVE  
X1SON  
DPY  
2
10000 RoHS & Green  
NIPDAUAG  
Level-2-260C-1 YEAR  
-40 to 125  
LR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF TPD1E01B04-Q1 :  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jan-2022  
Catalog : TPD1E01B04  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Addendum-Page 2  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
本、损失和债务,TI 对此概不负责。  
TI 提供的产品受 TI 的销售条款ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改  
TI 针对 TI 产品发布的适用的担保或担保免责声明。  
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE  
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2022,德州仪器 (TI) 公司  

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