TPD1E01B04DPYRQ1 [TI]
适用于 USB 和 FPD-Link 且采用 0402 封装的汽车类 0.18pF、±3.6V、±15kV ESD 保护二极管 | DPY | 2 | -40 to 125;![TPD1E01B04DPYRQ1](http://pdffile.icpdf.com/pdf2/p00360/img/icpdf/TPD1E01B04DP_2205008_icpdf.jpg)
型号: | TPD1E01B04DPYRQ1 |
厂家: | ![]() |
描述: | 适用于 USB 和 FPD-Link 且采用 0402 封装的汽车类 0.18pF、±3.6V、±15kV ESD 保护二极管 | DPY | 2 | -40 to 125 光电二极管 |
文件: | 总15页 (文件大小:1073K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TPD1E01B04-Q1
ZHCSN54A –MAY 2021 –REVISED DECEMBER 2021
TPD1E01B04-Q1 采用0402 封装的汽车类0.2pF、±3.6V、±15kV
ESD 保护二极管
1 特性
3 说明
• IEC 61000-4-2 4 级ESD 保护
TPD1E01B04-Q1 是一款双向 TVS ESD 保护二极管,
用于为 USB Type-C 和 FPD-Link 电路提供保护。
TPD1E01B04-Q1 的额定 ESD 冲击消散值等于 IEC
61000-4-2 国际标准(4 级)规定的最高水平。
– ±15kV 接触放电
– ±17kV 空气间隙放电
• IEC 61000-4-4 EFT 保护
– 80A (5/50ns)
• IEC 61000-4-5 浪涌保护
– 2.5A (8/20µs)
该器件采用一个0.20pF(典型值)的IO 电容,适用于
保护速率高达 20Gbps 的高速接口(例如 USB 3.1
Gen2 和 FPD-Link)。低动态电阻和低钳位电压确保
系统级抗瞬变事件保护。
• IO 电容:
– 0.20pF(典型值)
– 0.23pF(最大值)
• 直流击穿电压:6.4V(典型值)
• 超低泄漏电流:10nA(最大值)
• 低ESD 钳位电压:16A TLP 时为15V
• 低插入损耗:20 GHz
TPD1E01B04-Q1 采用业界通用的0402 (DPY) 封装。
器件信息(1)
封装尺寸(标称值)
器件型号
封装
X1SON (2)
TPD1E01B04-Q1
1.00mm x 0.60mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
• 支持速率高达20Gbps 的高速接口
• 业界通用0402 封装
• 符合AEC-Q101 标准
USB Type-C
Connector
– 器件HBM 分类等级H2
– 器件CDM 分类等级C5
– 器件工作温度范围:–40°C 至+125°C
SSRX1P
TPD1E01B04-Q1 (x4)
SSRX1N
SSTX1P
2 应用
SSTX1N
TPD4E05U06-Q1
• 终端设备
VBUS
SBU2
– 环视系统
– ADAS 视觉系统
– 后视摄像头
– 信息娱乐系统与仪表组
– 车身控制模块
– 音响主机
CC1
DPT
DMT
DMB
TPD4E05U06-Q1
• 接口
DPB
– 汽车串行器/解串器:FPD-Link
– USB Type-C
SBU1
– USB 3.1 Gen 2/3.0/2.0
– HDMI 2.0/1.4
CC2
VBUS
– 10/100/1000Mbps 以太网
SSRX2N
SSRX2P
SSTX2N
TPD1E01B04-Q1 (x4)
SSTX2P
典型应用
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSG26
TPD1E01B04-Q1
ZHCSN54A –MAY 2021 –REVISED DECEMBER 2021
www.ti.com.cn
Table of Contents
7.4 Device Functional Modes............................................9
8 Application and Implementation....................................9
8.1 Application Information............................................... 9
8.2 Typical Application...................................................... 9
9 Power Supply Recommendations................................10
10 Layout...........................................................................11
10.1 Layout Guidelines................................................... 11
10.2 Layout Example...................................................... 11
11 Device and Documentation Support..........................12
11.1 Documentation Support.......................................... 12
11.2 接收文档更新通知................................................... 12
11.3 支持资源..................................................................12
11.4 Trademarks............................................................. 12
11.5 Electrostatic Discharge Caution..............................12
11.6 术语表..................................................................... 12
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings—AEC Specification...............................4
6.3 ESD Ratings—IEC Specification................................ 4
6.4 ESD Ratings—ISO Specification................................ 4
6.5 Recommended Operating Conditions.........................4
6.6 Thermal Information....................................................4
6.7 Electrical Characteristics.............................................5
6.8 Typical Characteristics................................................6
7 Detailed Description........................................................8
7.1 Overview.....................................................................8
7.2 Functional Block Diagram...........................................8
7.3 Feature Description.....................................................8
Information.................................................................... 12
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision * (May 2021) to Revision A (December 2021)
Page
• 将数据表的状态从预告信息更改为量产数据..................................................................................................... 1
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5 Pin Configuration and Functions
1
2
图5-1. DPY Package 2-Pin X1SON Top View
表5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NO.
NAME
IO
1
2
I/O
I/O
ESD Protected Channel. If used as ESD IO, connect pin 2 to ground
ESD Protected Channel. If used as ESD IO, connect pin 1 to ground
IO
(1) I = input, O = output
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
A
Electrical fast transient
Peak pulse
IEC 61000-4-5 (5/50 ns) at 25°C
IEC 61000-4-5 power (tp - 8/20 µs) at 25°C
IEC 61000-4-5 current (tp - 8/20 µs) at 25°C
Operating free-air temperature
80
27
W
2.5
125
155
A
TA
°C
°C
–40
–65
Tstg
Storage temperature
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not
sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,
performance, and shorten the device lifetime.
6.2 ESD Ratings—AEC Specification
VALUE
±2500
±1000
UNIT
Human body model (HBM), per AEC Q101-001
Charged device model (CDM), per AEC Q101-005
V(ESD)
Electrostatic discharge
V
6.3 ESD Ratings—IEC Specification
VALUE
±15000
±17000
UNIT
IEC 61000-4-2 Contact Discharge, all pins
IEC 61000-4-2 Air-gap Discharge, all pins
V(ESD)
Electrostatic discharge
V
6.4 ESD Ratings—ISO Specification
VALUE
± 12500
±15000
UNIT
Contact discharge
Air-gap discharge
V(ESD)
Electrostatic discharge
V
ISO 10605, 330-pF, 330-Ω, IO
6.5 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
3.6
UNIT
V
VIO
TA
Input pin voltage
–3.6
–40
Operating free-air temperature
125
°C
6.6 Thermal Information
TPD1E01B04-Q1
DPY (X1SON)
2 PINS
THERMAL METRIC(1)
UNIT
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
442.6
°C/W
°C/W
°C/W
°C/W
°C/W
243.8
Junction-to-board thermal resistance
162.5
Junction-to-top characterization parameter
Junction-to-board characterization parameter
154.1
163.0
ΨJB
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6.6 Thermal Information (continued)
TPD1E01B04-Q1
THERMAL METRIC(1)
DPY (X1SON)
2 PINS
UNIT
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.7 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VRWM
VBRF
Reverse stand-off voltage
IIO < 10 nA
3.6
V
V
–3.6
Breakdown voltage, IO pin to GND
Measured as the maximum voltage
before device snaps back into
VHOLD voltage
6.4
VBRR
Breakdown voltage, GND to IO pin
Holding voltage
V
V
–6.4
VHOLD
IIO = 1 mA, TA = 25°C
5
5.9
7
6.5
IPP = 1 A, TLP, from IO to GND
IPP = 5 A, TLP, from IO to GND
IPP = 16 A, TLP, from IO to GND
IPP = 1 A, TLP, from GND to IO
IPP = 5 A, TLP, from GND to IO
IPP = 16 A, TLP, from GND to IO
VIO = ±2.5 V
9.2
15
7
VCLAMP Clamping voltage
V
9.2
15
ILEAK
RDYN
Leakage current, IO to GND
10
nA
IO to GND
0.57
0.57
Dynamic resistance
Line capacitance
Ω
GND to IO
VIO = 0 V, f = 1 MHz, IO to GND, TA
= 25°C
CL
0.2
0.23
pF
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6.8 Typical Characteristics
30
27
24
21
18
15
12
9
30
27
24
21
18
15
12
9
6
6
3
3
0
0
-3
-3
0
3
6
9
12 15
Voltage (V)
18
21
24
27
0
3
6
9
12 15
Voltage (V)
18
21
24
27
D001
D002
图6-1. Positive TLP Curve
图6-2. Negative TLP Curve
110
10
100
90
80
70
60
50
40
30
20
10
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-10
-10
0
10 20 30 40 50 60 70 80 90 100
Time (ns)
-10
0
10 20 30 40 50 60 70 80 90 100
Time (ns)
D003
D004
图6-3. 8-kV IEC Waveform
图6-4. –8-kV IEC Waveform
30
27.5
25
3.6
3.3
3
0.4
Power
Current
0.35
0.3
22.5
20
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
17.5
15
0.25
0.2
12.5
10
0.15
0.1
7.5
5
-40èC
25èC
85èC
125èC
2.5
0
0.05
0
-2.5
-0.3
-5
0
5
10 15 20 25 30 35 40 45 50 55 60
Time (ms)
D005
0
0.4
0.8
1.2
1.6 2
Voltage Bias (V)
2.4
2.8
3.2
3.6
图6-5. Surge Curve (tp = 8/20µs), IO pin to GND
D006
图6-6. Capacitance vs. Bias Voltage
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6.8 Typical Characteristics (continued)
0.4
0.35
0.3
1000
800
600
400
200
0
0.25
0.2
0.15
0.1
-40èC
25èC
85èC
125èC
0.05
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
0
0.4
0.8
1.2
1.6 2
Voltage Bias (V)
2.4
2.8
3.2
3.6
D007
D006
图6-8. Leakage Current vs. Temperature
图6-7. Capacitance vs. Bias Voltage (DPY Package)
1
0.8
0.6
0.4
0.2
0
0.3
0.27
0.24
0.21
0.18
0.15
0.12
0.09
0.06
0.03
0
-0.2
-0.4
-0.6
-0.8
-1
DPY Package
-7 -6 -5 -4 -3 -2 -1
0
Voltage (V)
1
2
3
4
5
6
7
2
7
12 17
Frequency (GHz)
22
27
30
D001
图6-9. DC Voltage Sweep I-V Curve
图6-10. Capacitance vs. Frequency
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
DPY Package
-4
0.1
0.2 0.3 0.50.7
1
2
3
Frequency (GHz)
4 5 678 10
20 30 40
图6-11. Insertion Loss
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7 Detailed Description
7.1 Overview
The TPD1E01B04-Q1 device is a bidirectional ESD Protection Diode with ultra-low capacitance. This device can
dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The
ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins including
Thunderbolt 3. The low capacitance allows for extremely low losses even at RF frequencies such as USB 3.1
Gen 2, Thunderbolt 3, or antenna applications.
7.2 Functional Block Diagram
IO
GND
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7.3 Feature Description
7.3.1 IEC 61000-4-2 ESD Protection
The I/O pins can withstand ESD events up to ±15-kV contact and ±17-kV air gap. An ESD-surge clamp diverts
the current to ground.
7.3.2 IEC 61000-4-4 EFT Protection
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω
impedance). An ESD-surge clamp diverts the current to ground.
7.3.3 IEC 61000-4-5 Surge Protection
The I/O pins can withstand surge events up to 2.5 A and 27 W (8/20 µs waveform). An ESD-surge clamp diverts
this current to ground.
7.3.4 IO Capacitance
The capacitance between each I/O pin to ground is 0.2 pF (typical) and 0.23 pF (maximum). This device
supports data rates up to 20 Gbps.
7.3.5 DC Breakdown Voltage
The DC breakdown voltage of each I/O pin is ±6.4 V (typical). This ensures that sensitive equipment is protected
from surges above the reverse standoff voltage of ±3.6 V.
7.3.6 Ultra Low Leakage Current
The I/O pins feature an ultra-low leakage current of 10 nA (maximum) at a bias voltage of ±2.5 V.
7.3.7 Low ESD Clamping Voltage
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 9.2 V (IPP = 5 A).
7.3.8 Supports High Speed Interfaces
This device is capable of supporting high speed interfaces up to 20 Gbps, because of the extremely low IO
capacitance.
7.3.9 Industrial Temperature Range
This device features an industrial operating range of –40°C to +125°C.
7.3.10 Easy Flow-Through Routing Package
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers
flow-through routing, requiring minimal modification to an existing layout.
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7.4 Device Functional Modes
The TPD1E01B04-Q1 device is a passive integrated circuit that triggers when voltages are above VBRF or below
VBRR. During ESD events, voltages as high as ±17 kV (air) can be directed to ground through the internal diode
network. When the voltages on the protected line fall below the trigger levels of TPD1E01B04-Q1 (usually within
10s of nano-seconds) the device reverts to passive.
8 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
8.1 Application Information
The TPD1E01B04-Q1 is a diode type TVS which is used to provide a path to ground for dissipating ESD events
on high-speed signal lines between a human interface connector and a system. As the current from ESD passes
through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the
protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
8.2 Typical Application
USB Type-C
Connector
SSRX1P
TPD1E01B04-Q1 (x4)
SSRX1N
SSTX1P
SSTX1N
TPD4E05U06-Q1
VBUS
SBU2
CC1
DPT
DMT
DMB
TPD4E05U06-Q1
DPB
SBU1
CC2
VBUS
SSRX2N
SSRX2P
SSTX2N
TPD1E01B04-Q1 (x4)
SSTX2P
图8-1. USB Type-C for Thunderbolt 3 ESD Schematic
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8.2.1 Design Requirements
For this design example eight TPD1E01B04-Q1 devices and two TPD4E05U06-Q1 devices are being used in a
USB Type-C for Thunderbolt 3 application. This provides a complete ESD protection scheme.
Given the Thunderbolt 3 application, the parameters listed in 表8-1 are known.
表8-1. Design Parameters
DESIGN PARAMETER
VALUE
0 V to 3.6 V
up to 10 GHz
0 V to 5 V
Signal range on superspeed Lines
Operating frequency on superspeed Lines
Signal range on CC, SBU, and DP/DM Lines
Operating frequency on CC, SBU, and DP/DM Lines
up to 480 MHz
8.2.2 Detailed Design Procedure
8.2.2.1 Signal Range
The TPD1E01B04-Q1 supports signal ranges between –3.6 V and 3.6 V, which supports the SuperSpeed pairs
on the USB Type-C application. The TPD4E05U06-Q1 supports signal ranges between 0 V and 5.5 V, which
supports the CC, SBU, and DP-DM lines.
8.2.2.2 Operating Frequency
The TPD1E01B04-Q1 has a 0.2 pF (typical) capacitance, which supports the Thunderbolt 3 data rates of 20
Gbps. The TPD4E05U06-Q1 has a 0.5-pF (typical) capacitance, which easily supports the CC, SBU, and DP-
DM data rates.
8.2.3 Application Curves
图8-2. USB 3.1 Gen 2 10-Gbps Eye Diagram (Bare 图8-3. USB 3.1 Gen 2 10-Gbps Eye Diagram (with
Board)
TPD1E01B04-Q1)
9 Power Supply Recommendations
This device is a passive ESD device so there is no need to power it. Take care not to violate the recommended
I/O specification to ensure the device functions properly.
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10 Layout
10.1 Layout Guidelines
• The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
• Route the protected traces as straight as possible.
• Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
10.2 Layout Example
图10-1. USB Type-C Mid-Mount, Hybrid Connector ESD Layout
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, Generic ESD Evaluation Module user's guide
11.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2022 Texas Instruments Incorporated
12
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Product Folder Links: TPD1E01B04-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
7-Jan-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPD1E01B04DPYRQ1
ACTIVE
X1SON
DPY
2
10000 RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
LR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPD1E01B04-Q1 :
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
7-Jan-2022
Catalog : TPD1E01B04
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
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Copyright © 2022,德州仪器 (TI) 公司
相关型号:
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TPD1E05U06-Q1
TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface
TI
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