TMC57253HSOP [TI]
DRIVER; 司机
| 型号： | TMC57253HSOP |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | DRIVER |
| 文件： | 总11页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
HSOP TYPE-B
(TOP VIEW)
•
•
•
•
•
•
TTL-Compatible Inputs
CCD-Compatible Outputs
Adjustable Clock Levels
High-Speed Clear
V
V
ABM
AB
1
2
3
24
23
22
21
20
19
18
Serial-Gate Midlevel for CDS Operation
Solid-State Reliability
V
ABOUT
CC
GND
V
ABL
EN
4
GND
description
5
ABIN
ABMIN
IA1IN
IA2IN
SAIN
SRIN
SRMIN
GND
IA1OUT
6
V
The TMC57253 is a monolithic CMOS integrated
IA
7
circuit designed to drive image-area gates (IAG1,
IAG2), antiblooming gate (ABG), storage-area
gate (SAG), and serial-register gate (SRG) of the
Texas Instruments (TI ) TC255 CCD image
sensor. The TMC57253 interfaces the CCD image
sensor to the TI TMC57751 ASIC or user-defined
timing generator; it receives TTL-input signals
from the timing generator and outputs level-
shifted signals to the image sensor.
IA2OUT
GND
8
17
16
15
14
13
9
SAOUT
10
11
12
V
S
SROUT
V
SM
logic symbol
ABOUT follows ABIN and ABMIN and switches
between V
, V , and V
. IA1OUT and
ABL
AB
ABM
IA2OUT follow IA1IN and IA2IN, respectively, and
Φ
switch between GND and V . The SAOUT output
TTL/CCD
IA
follows the SAIN and switches GND and V .
S
SROUT follows SRIN and SRMIN and switches
4
EN
between GND, V , and V .
SM
S
5
ABIN
6
The TMC57253 is available in a 24-pin HSOP-B
surface-mount package and is characterized for
operation from –20°C to 45°C.
23
14
ABMIN
24
ABOUT
SROUT
V
ABM
10
11
13
SRIN
SRMIN
V
SM
7
8
9
20
18
16
IA1IN
IA2IN
SAIN
IA1OUT
IA2OUT
SAOUT
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method3015;however, itisadvisedthatprecautionsbetakentoavoidapplicationofanyvoltagehigherthanmaximum-ratedvoltages
to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be
placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either V
CC
or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
TI is a trademark of Texas Instruments Incorporated.
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
ABIN
NO.
5
I
I
Antiblooming input
ABMIN
ABOUT
EN
6
Antiblooming midlevel input
Antiblooming output
Enable control input
23
4
O
I
3, 12, 17,
21
GND
Ground
IA1IN
7
I
O
I
Image area 1 input
IA1OUT
IA2IN
20
8
Image area 1 output
Image area 2 input
IA2OUT
SAIN
18
9
O
I
Image area 2 output
Storage area input
SAOUT
SRIN
16
10
11
14
1
O
I
Storage area output
Serial register input
SRMIN
SROUT
I
Serial register mid input
Serial register output
O
V
AB
High-level antiblooming supply voltage
Low-level antiblooming supply voltage
Midlevel antiblooming supply voltage
Supply voltage
V
ABL
22
24
2
V
ABM
V
V
V
V
CC
IA
19
15
13
Image supply voltage
Serial and storage-gate supply voltage
Midlevel serial-gate supply voltage
S
SM
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
functional block diagram
1
24
V
AB
V
ABM
23
Level
Shift
ABOUT
2
HV_BUF
and
Driver
V
CC
Level
Shift
22
20
19
18
V
ABL
4
5
EN
HV_BUF
and
Driver
Level
Shift
IA1OUT
ABIN
V
IA
6
7
ABMIN
IA1IN
HV_BUF
and
Driver
Level
Shift
IA2OUT
Logic
8
IA2IN
SAIN
HV_BUF
and
Driver
Level
Shift
16
SAOUT
9
15
14
V
10
11
S
SRIN
Level
Shift
SROUT
HV_BUF
and
Driver
SRMIN
Level
Shift
13
V
SM
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
Continuous total power dissipation at (or below) T = 25°C:
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 20 V
CC
A
Unmounted device (see Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1990 mW
Mounted device (see Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2754 mW
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20°C to 45°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
STG
Lead temperature: 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
1,6 mm (1/16 inch) from case for 3 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
3000
2800
Mounted Device
(see Note A)
2600
2400
2200
2000
1800
1600
1400
Unmounted Device
1200
1000
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
– Free-Air Temperature –°C
T
A
NOTE A: The mounted-device derating curve of Figure 1 is obtained under the following conditions:
The board is 50 mm by 50 mm by 1.6 mm thick.
The board material is glass epoxy.
The copper thickness of all the etch runs is 35 microns.
Etch-run dimensions – All twenty etch runs are 0.4 mm by 22 mm.
Each chip is soldered to the board.
An aluminum cooling fin 10 mm by 10 mm by 1 mm thick is coupled to the chip with thermal paste.
Figure 1
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
recommended operating conditions
MIN NOM
MAX
5.5
18
3
UNIT
V
Supply voltage, V
4.5
8
5
CC
Antiblooming supply voltage, V
V
AB
Low-level antiblooming supply voltage, V
0
V
ABL
Midlevel antiblooming supply voltage, V
3
10
14
14
7
V
ABM
Image-gate supply voltage, V
IA
Serial and storage-gate supply voltage, V
8
V
8
V
S
Serial-gate midlevel supply voltage, V
SM
3
V
High-level input voltage, V
2.5
V
IH
Low-level input voltage, V
0.9
25
V
IL
IA1OUT, IA2OUT (fast clear)
IA1OUT, IA2OUT (transfer)
SAOUT (transfer)
ABOUT
MHz
MHz
MHz
MHz
MHz
12.5
12.5
12.5
12.5
Frequency, f
clock
SROUT
IA1OUT, IA2OUT, SAOUT
ABOUT
1%
23%
85%
Drive mode (on ratio)
SROUT
Operating free-air temperature, T
–20
45
°C
A
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
= 0.5 mA
MIN
TYP
12
0
MAX
UNIT
V
V
V
High-level output voltage
Low-level output voltage
High-level input current
I
I
OH
OH
= 0
V
OL
OL
I
I
I
I
I
I
I
I
I
V
V
V
V
= 5 V
= 0
±10
±10
µA
IH
IH
Low-level input current
µA
IL
IL
Supply current
= 5 V
0.1
5
mA
mA
mA
mA
mA
mA
mA
CC
IA
CC
Image-gate supply current
Antiblooming supply current
Low-level antiblooming supply current
Midlevel antiblooming supply current
Midlevel serial-gate supply current
Serial-gate supply current
= 12 V
IA
15
15
0.5
2
AB
ABL
ABM
SM
S
V
= 12 V
AB
V
= 12 V
S
2
IA1OUT,
IA2OUT,
SAOUT
I
= 10 mA,
V
= 8 V
= 8 V,
= 4 V
= 0 V
O
I
IA
5
V = V , GND
CC
I
V
= 10 mA,
V
AB
O
r
o
Output resistance
Ω
ABOUT
SROUT
= 4 V,
V
10
50
SM
ABM
V = V , GND
V
ABL
I
CC
I
V
= 10 mA,
V = 8 V,
S
O
= 4 V,
V = V , GND
SM
I
CC
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
switching characteristics for ABOUT, IA1OUT, IA2OUT, SAOUT, and SROUT, V
= 13 V,
†
AB
V
= 1.5 V,V
= 6.5 V, V = 11 V, V
= 5 V, V = 11 V, T = 25°C (unless otherwise noted)
ABI
ABM
IA
SM
S
A
FROM
(INPUT)
TO
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
(OUTPUT)
IA1OUT
IA2OUT
SAOUT
IA1IN
IA2IN
SAIN
See Figure 3
85
t
pd
Propagation delay time
SRIN
ns
SROUT
ABOUT
See Figure 4
See Figure 5
40
80
90
SRMIN
ABIN
ABMIN
IA1OUT
IA2OUT
SAOUT
SROUT
ABOUT
IA1OUT
IA2OUT
SAOUT
SROUT
ABOUT
t
t
Disable time
Enable time
EN
EN
See Figure 6
See Figure 6
1
1
ns
ns
PLZ
PZH
IA1OUT
IA2OUT
SAOUT
ABOUT
See Figure 3,
See Figure 3,
t = 80 ns
40%
40%
60%
60%
c
‡
Duty cycle
t = 160 ns
c
†
‡
The load is a Texas Instruments TC255 CCD image sensor.
t
wH
Duty cycle
100
(t
t
)
wL
wH
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
PARAMETER MEASUREMENT INFORMATION
V
90%
10%
IH
IL
V
t
r
t
f
5 ns MAX
5 ns MAX
Figure 2. Rise and Fall Time Requirements for Input Signals
V
CC
50%
IA1IN, IA2IN, SAIN
GND
t
t
PHL
PLH
V
IA
or V
S
IA1OUT, IA2OUT, SAOUT
50%
GND
t
t
wH
wL
NOTE A: t = t
pd PLH
or t
PHL
Figure 3. Duty Cycle and Propagation Delay
26 ns
MIN
54 ns MIN
V
CC
SRIN
50%
GND
†
5 ns MAX
V
S
SRMIN
50%
GND
t
PHL
†
26 ns MIN
t
PHL
t
PLH
V
V
S
SROUT
50% V
SM
S
50% V
SM
GND
†
If SRIN and SRMIN are both high, SROUT follows SRIN.
NOTE A: t = t or t
pd PLH
PHL
Figure 4. Serial-Register-Driver Waveforms
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
PARAMETER MEASUREMENT INFORMATION
166 ns MIN
80 ns MIN
80 ns MIN
V
CC
ABIN
50%
GND
t
V
CC
PHL
50%
GND
ABMIN
ABOUT
t
PLH
t
PLH
50%
and V
t
PHL
V
AB
50%
V
ABM
50% V
ABM
V
ABL
NOTES: A.
B.
V
AB
are in a short-circuit condition if ABIN and ABMIN are held high at the same time. This short-circuit condition can
ABM
destroy the device.
t
= t or t
pd PLH PHL
Figure 5. Antiblooming-Driver Waveforms
V
CC
50%
50%
EN
GND
t
t
PLZ
PZH
V
or V
S
IM
IA1OUT, IA2OUT,
SAOUT, SROUT
50%
t
50%
GND
t
PZH
PLZ
V
AB
or V
ABM
50%
50%
ABOUT
GND
Figure 6. Enable Waveforms
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
MECHANICAL DATA
HSOP-B plastic small-outline package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound.
The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will
remain stable when operated in high-humidity conditions. Leads require no additional cleaning or processing when
used in soldered assembly.
0,50
0,30
1,27
M
0,13
24
13
6,65
6,35
7,60 10,80
7,40 10,00
0,30
0,20
1
12
15,40
15,20
19,50
18,90
0°– 10°
1,20
0,40
Seating Plane
0,15
0,10 MIN
2,65 MAX
7/94
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TMC57253
DRIVER
SOCS040A – MARCH 1994 – REVISED NOVEMBER 1994
MECHANICAL DATA
15,3
0,76
1,7
0,51
24
13
12
7,8
10,8
7,0
1
1,27
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS
Figure 7. 24-Pin/375-mil HSOP Land Design
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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