TLV522DGKT [TI]

Dual, 5.5-V, 8-kHz, ultra-low quiescent current (500-nA), RRIO operational amplifier | DGK | 8 | -40 to 125;
TLV522DGKT
型号: TLV522DGKT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Dual, 5.5-V, 8-kHz, ultra-low quiescent current (500-nA), RRIO operational amplifier | DGK | 8 | -40 to 125

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TLV522  
ZHCSF26 MAY 2016  
TLV522 双路毫微功耗、500nARRIO CMOS 运算放大器  
1 特性  
3 说明  
1
无与伦比的性价比  
宽电源电压范围:1.7V 5.5V  
TLV522 是一款 500nA 双路毫微功耗运算放大器,属  
TI 的超值性能毫微功耗运算放大器系列。TLV522  
具有 8kHz 增益带宽和 500nA 静态电流,是楼宇自动  
化和遥感节点中的常见电池供电类 应用 的理想选择。  
该器件的互补金属氧化物半导体 (CMOS) 输入级可实  
现超低 IBIAS,从而降低兆欧级反馈电阻拓扑(例如高  
阻抗光电二极管和充电检测应用)中经常引入的 误  
差。此外,内置的电磁干扰 (EMI) 保护可降低器件对  
手机、WiFi、无线电发射器、RFID 阅读器所发出意外  
射频 (RF) 信号的敏感度。  
低电源电流:500nA  
良好偏移电压:4mV(最大值)  
良好 TcVos1.5µV/°C  
增益带宽:8MHz  
轨到轨输入和输出 (RRIO)  
单位增益稳定  
低输入偏置电流:1pA  
强化的电磁干扰 (EMI) 保护  
温度范围:–40°C 125°C  
8 引脚超薄小外形尺寸 (VSSOP) 封装  
TLV522 采用 8 引脚 VSSOP (MSOP) 封装,运行温度  
范围为 –40°C 125°C。  
器件信息(1)  
2 应用  
器件型号  
TLV522  
封装  
VSSOP (8)  
封装尺寸(标称值)  
个人健康监视器  
3.00mm x 3.00mm  
电池组  
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。  
太阳能或能量采集系统  
PIR、烟雾、燃气和火灾检测系统  
电池供电物联网 (IoT) 设备  
远程传感器/无线传感节点  
可穿戴设备  
空格  
空格  
血糖监测  
毫微功耗氧气传感器放大器  
100 M  
ë+  
1 Mꢀ  
ëhÜÇ  
+
R
L
OXYGEN SENSOR  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: SNOSD27  
 
 
 
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
目录  
1
2
3
4
5
6
特性.......................................................................... 1  
8
9
Application and Implementation ........................ 12  
8.1 Application Information............................................ 12  
8.2 Typical Application: 60 Hz Twin "T" Notch Filter..... 12  
8.3 Do's and Don'ts ...................................................... 13  
Power Supply Recommendations...................... 14  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 2  
Specifications......................................................... 3  
6.1 Absolute Maximum Ratings ...................................... 3  
6.2 ESD Ratings ............................................................ 3  
6.3 Recommended Operating Ratings............................ 3  
6.4 Thermal Information.................................................. 3  
6.5 Electrical Characteristics........................................... 4  
6.6 Typical Characteristics.............................................. 5  
Detailed Description .............................................. 9  
7.1 Overview ................................................................... 9  
7.2 Functional Block Diagram ......................................... 9  
7.3 Feature Description................................................... 9  
7.4 Device Functional Modes.......................................... 9  
10 Layout................................................................... 14  
10.1 Layout Guidelines ................................................. 14  
10.2 Layout Example .................................................... 14  
11 器件和文档支持 ..................................................... 15  
11.1 器件支持 ............................................................... 15  
11.2 文档支持 ............................................................... 15  
11.3 社区资源................................................................ 15  
11.4 ....................................................................... 15  
11.5 静电放电警告......................................................... 15  
11.6 Glossary................................................................ 15  
12 机械、封装和可订购信息....................................... 15  
7
4 修订历史记录  
日期  
修订版本  
注释  
2016 5 月  
*
首次发布。  
5 Pin Configuration and Functions  
8-Pin VSSOP  
DGK Package  
Top View  
OUT A  
-IN A  
+IN A  
V-  
1
2
3
4
8
7
6
5
V+  
A
OUT B  
-IN B  
+IN B  
B
Pin Functions  
PIN  
I/O  
DESCRIPTION  
PIN  
1
NAME  
OUT A  
–IN A  
+IN A  
V–  
O
I
Channel A Output  
2
Channel A Inverting Input  
Channel A Non-Inverting Input  
3
I
4
P
I
Negative (lowest) power supply  
Channel B Non-Inverting Input  
Channel B Inverting Input  
Channel B Output  
5
+IN B  
–IN B  
OUT B  
V+  
6
I
7
O
P
8
Positive (highest) power supply  
2
Copyright © 2016, Texas Instruments Incorporated  
 
 
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)(2)(3)  
MIN  
-0.3  
V- – 0.3  
MAX  
UNIT  
V
Supply voltage, V+ to V–  
6
V+ + 0.3  
10  
Voltage(2)  
Current(2)  
V
Signal input pins  
–10  
mA  
Output short current  
Continuous(4)  
Junction temperature  
Storage temperature, Tstg  
–40  
–65  
150  
150  
°C  
°C  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be  
current-limited to 10 mA or less.  
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and  
specifications.  
(4) Short-circuit to V–.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)  
±2000  
Electrostatic  
discharge  
V(ESD)  
V
Charged device model (CDM), per JEDEC specification JESD22-C101,  
all pins(2)  
±250  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Ratings  
over operating free-air temperature range (unless otherwise noted)  
MIN  
1.7  
NOM  
MAX  
5.5  
UNIT  
V
Supply Voltage ( V+– V−  
Specified Temperature  
)
–40  
125  
°C  
6.4 Thermal Information  
TLV522  
THERMAL METRIC(1)  
DGK (VSSOP)  
8 PINS  
182.5  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
RθJC(top)  
RθJB  
73.6  
Junction-to-board thermal resistance  
104.1  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
13.7  
ψJB  
102.5  
RθJC(bot)  
N/A  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
Copyright © 2016, Texas Instruments Incorporated  
3
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
MAX UNIT  
6.5 Electrical Characteristics  
TA = 25°C, V+ = 3.3 V, V= 0 V, VCM = VO = V+/2, and RL > 1 MΩ , unless otherwise noted.  
PARAMETER  
OFFSET VOLTAGE  
TEST CONDITIONS  
MIN  
TYP(1)  
Input offset voltage (VOS  
)
VCM = 0.3 V  
VCM = 3 V  
–4  
–4  
±1  
±1  
4
mV  
4
Drift (dVOS/dT)  
1.5  
µV/°C  
Power-Supply Rejection Ratio  
(PSRR)  
V+ = 1.8 V to 3.3 V, VCM = 0.3 V  
80  
109  
dB  
INPUT VOLTAGE RANGE  
Common-Mode voltage range (VCM  
)
CMRR 62 dB  
0
3.3  
V
Common-Mode Rejection Ratio  
(CMRR)  
0 V < VCM < 3.3 V  
0 V < VCM < 2.2V  
62  
90  
90  
dB  
INPUT BIAS CURRENT  
Input bias current (IBIAS  
)
)
±1  
pA  
Input offset current (IOS  
±0.1  
INPUT IMPEDANCE  
Differential  
Common mode  
NOISE  
1013 || 2.5  
1013 || 2.5  
Ω || pF  
Input voltage noise density, f = 1 kHz (en)  
Current noise density, f = 1 kHz (in)  
OPEN-LOOP GAIN  
300  
65  
nV/Hz  
fAHz  
Open-loop voltage gain (AOL  
)
V+ = 5 V  
91  
101  
dB  
RL = 100 kto V+/2, 0.5 V < VO < 4.5 V  
OUTPUT  
Voltage output swing from positive rail  
Voltage output swing from negative rail  
Output current sourcing  
V+ = 1.8 V, RL = 100 kΩ to V+/2  
V+ = 1.8 V, RL = 100 kΩ to V+/2  
3
2
20  
20  
mV  
mA  
Sourcing, V+ = 1.8 V  
1
1
3
5
VO to V, VIN(diff) = 100 mV  
Output current sinking  
Sinking, V+ = 1.8 V  
VO to V+, VIN(diff) = –100 mV  
FREQUENCY RESPONSE  
Gain-bandwidth product (GBWP)  
Slew rate (SR)  
CL = 20 pF  
8
3.6  
3.7  
kHz  
G = +1, Rising edge, 1Vp-p, CL = 20 pF  
G = +1, Falling edge, 1Vp-p, CL = 20 pF  
V/ms  
POWER SUPPLY  
Quiescent current per channel (IQ)  
VCM = 0.3 V, IO = 0  
500  
800  
nA  
(1) Refer to Typical Characteristics.  
4
Copyright © 2016, Texas Instruments Incorporated  
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
6.6 Typical Characteristics  
TA = 25 °C, VOUT = VCM = VS/2, RLOAD = 1 MΩ connected to VS/2, and CL = 20 pF, unless otherwise noted.  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VCM = 0.3V  
VCM = VS - 0.3V  
125°C  
85°C  
25°C  
0°C  
125°C  
85°C  
25°C  
0°C  
-40°C  
-40°C  
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
Supply Voltage (V)  
Supply Voltage (V)  
C001  
C001  
No Output Load  
VCM = 0.3 V  
No Output Load  
VCM = (V+) – 0.3 V  
Figure 1. Supply Voltage vs Supply Current per Channel,  
Low Vcm  
Figure 2. Supply Voltage vs Supply Current per Channel,  
High Vcm  
1000  
900  
800  
700  
600  
500  
400  
100  
10  
1
0.1  
125°C  
85°C  
25°C  
0°C  
300  
200  
100  
0
-40°C  
0.01  
25°C  
125°C  
-40°C  
0.001  
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3  
1
10  
100  
1000  
10000  
Common Mode Voltage (V)  
Output Referred to V- (mV)  
C001  
SNK  
No Output Load  
VS = 3.3 V  
Figure 3. Supply Current vs  
Common Mode at 3.3 V  
Figure 4. Output Sinking Current vs  
Output Swing at 3.3 V  
100  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1
0.1  
0.01  
-40°C  
25°C  
-40°C  
25°C  
125°C  
125°C  
4.5  
0.001  
1
0
10  
100  
1000  
10000  
1.5  
2
2.5  
3
3.5  
4
5
Output Referred to V+ (mV)  
Supply Voltage (V)  
SRC  
SHR  
VS = 3.3 V  
Output set high (sourcing), shorted to V–  
Figure 5. Output Sourcing Current vs  
Output Swing at 3.3 V  
Figure 6. Output Short Circuit Current to V- vs  
Supply Voltage  
Copyright © 2016, Texas Instruments Incorporated  
5
 
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
Typical Characteristics (continued)  
TA = 25 °C, VOUT = VCM = VS/2, RLOAD = 1 MΩ connected to VS/2, and CL = 20 pF, unless otherwise noted.  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
-0.02  
-0.04  
-0.06  
-0.08  
-0.10  
-40°C  
25°C  
125°C  
0
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-0.3  
0.3  
0.9  
1.5  
2.1  
2.7  
3.3  
Supply Voltage (V)  
Common Mode Voltage (V)  
SHR  
C004  
Ouput set low (sinking), shorted to V+  
VS = 3.3 V  
TA = 25°C  
Figure 7. Output Short Circuit Current to V+ vs  
Supply Voltage  
Figure 8. Input Bias Current vs  
Common Mode Voltage at 3.3 V  
2.0  
1.5  
50  
40  
30  
1.0  
20  
0.5  
10  
0.0  
0
-10  
-20  
-30  
-40  
-50  
-0.5  
-1.0  
-1.5  
-2.0  
-0.3  
0.3  
0.9  
1.5  
2.1  
2.7  
3.3  
-0.3  
0.3  
0.9  
1.5  
2.1  
2.7  
3.3  
Common Mode Voltage (V)  
Common Mode Voltage (V)  
C005  
C006  
VS = 3.3 V  
TA = 85°C  
VS = 3.3 V  
TA = 125°C  
Figure 9. Input Bias Current vs  
Common Mode Voltage at 3.3 V  
Figure 10. Input Bias Current vs  
Common Mode Voltage at 3.3 V  
10k  
IN  
VS = 5V  
RL=100k  
OUT  
1k  
100  
100m  
Time (100us/div)  
1
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
C001  
C001  
VS = ±0.9 V  
G = +1  
RL = 10 MΩ  
CL = 20 pF  
VS = 5 V  
RL = 100 kΩ  
CL = 20 pF  
VIN = ±100 mV  
Figure 11. Input Referred Voltage Noise  
Figure 12. Pulse Response, 200mVpp at 1.8 V  
6
Copyright © 2016, Texas Instruments Incorporated  
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
Typical Characteristics (continued)  
TA = 25 °C, VOUT = VCM = VS/2, RLOAD = 1 MΩ connected to VS/2, and CL = 20 pF, unless otherwise noted.  
IN  
IN  
OUT  
OUT  
Time (200us/div)  
Time (100us/div)  
C002  
C003  
VS = ±0.9 V  
G = +1  
RL = 10 MΩ  
CL = 20 pF  
VS = ±2.5 V  
G = +1  
RL = 10 MΩ  
CL = 20 pF  
VIN = ±500mV  
VIN = ±100 mV  
Figure 13. Pulse Response, 1Vpp at 1.8V  
Figure 14. Pulse Response, 200mVpp at 5V  
40  
30  
20  
10  
0
180  
135  
90  
-40°C  
25°C  
125°C  
IN  
OUT  
Gain  
Phase  
45  
0
œ10  
œ45  
100000  
Time (200us/div)  
100  
1000  
10000  
Frequency (Hz)  
C011  
C002  
VS = 1.8 V  
RL = 100 kΩ  
CL = 20 pF  
VS = ±2.5 V  
G = +1  
RL = 10 MΩ  
CL = 20 pF  
VIN = ±1V  
Figure 16. Gain and Phase vs  
Temperature at 1.8 V  
Figure 15. Pulse Response, 2Vpp at 5V  
40  
30  
20  
10  
0
180  
135  
90  
40  
30  
20  
10  
0
180  
-40°C  
25°C  
125°C  
-40°C  
25°C  
125°C  
Gain  
Gain  
135  
90  
Phase  
Phase  
45  
45  
0
0
œ10  
œ45  
œ10  
œ45  
100  
1000  
10000  
100000  
100  
1000  
10000  
100000  
Frequency (Hz)  
Frequency (Hz)  
C008  
C012  
VS = 5 V  
RL = 100 kΩ  
CL = 20 pF  
VS = 1.8 V  
RL = 1 MΩ  
CL = 20 pF  
Figure 17. Gain and Phase vs  
Temperature at 5 V  
Figure 18. Gain and Phase vs  
Temperature at 1.8 V  
Copyright © 2016, Texas Instruments Incorporated  
7
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
Typical Characteristics (continued)  
TA = 25 °C, VOUT = VCM = VS/2, RLOAD = 1 MΩ connected to VS/2, and CL = 20 pF, unless otherwise noted.  
40  
30  
20  
10  
0
180  
135  
90  
40  
30  
20  
10  
0
180  
-40°C  
25°C  
125°C  
-40°C  
25°C  
125°C  
Gain  
Gain  
135  
90  
Phase  
Phase  
45  
45  
0
0
œ10  
œ45  
œ10  
œ45  
100  
1000  
10000  
100000  
100  
1000  
10000  
100000  
Frequency (Hz)  
Frequency (Hz)  
C009  
C013  
VS = 5 V  
RL = 1 MΩ  
CL = 20 pF  
VS = 1.8 V  
RL = 10 MΩ  
CL = 20 pF  
Figure 19. Gain and Phase vs  
Temperature at 5 V  
Figure 20. Gain and Phase vs  
Temperature at 1.8 V  
40  
180  
-40°C  
25°C  
Gain  
125°C  
30  
20  
10  
0
135  
90  
Phase  
45  
0
œ10  
œ45  
100  
1000  
10000  
100000  
Frequency (Hz)  
C010  
VS = 5 V  
RL = 10 MΩ  
CL = 20 pF  
Figure 21. Gain and Phase vs  
Temperature at 5 V  
8
Copyright © 2016, Texas Instruments Incorporated  
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
7 Detailed Description  
7.1 Overview  
The TLV522 dual op amplifier is unity-gain stable and can operate on a single supply, making it highly versatile  
and easy to use.  
The TLV522 is fully specified and tested from 1.7 V to 5.5 V. Parameters that vary significantly with operating  
voltages or temperature are shown in the Typical Characteristics curves.  
7.2 Functional Block Diagram  
7.3 Feature Description  
The amplifier's differential inputs consist of a non-inverting input (IN+) and an inverting input (IN–). The device  
amplifies only the difference in voltage between the two inputs, which is called the differential input voltage. The  
output voltage of the op-amp VOUT is given by Equation 1:  
VOUT = AOL (IN+ – IN)  
(1)  
where AOL is the open-loop gain of the amplifier, typically around 100 dB.  
7.4 Device Functional Modes  
7.4.1 Rail-To-Rail Input  
The input common-mode voltage range of the TLV522 extends to the supply rails. This is achieved with a  
complementary input stage — an N-channel input differential pair in parallel with a P-channel differential pair.  
The N-channel pair is active for input voltages close to the positive rail, typically (V+) – 800 mV to 200 mV above  
the positive supply, while the P-channel pair is on for inputs from 300 mV below the negative supply to  
approximately (V+) – 800 mV. There is a small transition region, typically (V+) – 1.2 V to (V+) – 0.8 V, in which  
both pairs are on. This 400 mV transition region can vary 200 mV with process variation. Within the 400 mV  
transition region PSRR, CMRR, offset voltage, offset drift, and THD may be degraded compared to operation  
outside this region.  
7.4.2 Supply Current Changes Over Common Mode  
Because of the ultra-low supply current, changes in common mode voltages will cause a noticeable change in  
the supply current as the input stages transition through the transition region, as shown in Figure 22 below.  
Copyright © 2016, Texas Instruments Incorporated  
9
 
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
Device Functional Modes (continued)  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
125°C  
85°C  
25°C  
0°C  
-40°C  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Common Mode Voltage (V)  
C001  
Figure 22. Supply Current Change Over Common Mode at 5 V  
For the lowest supply current operation, keep the input common mode range between V- and 1 V below V+.  
7.4.3 Design Optimization With Rail-To-Rail Input  
In most applications, operation is within the range of only one differential pair. However, some applications can  
subject the amplifier to a common-mode signal in the transition region. Under this condition, the inherent  
mismatch between the two differential pairs may lead to degradation of the CMRR and THD. The unity-gain  
buffer configuration is the most problematic as it will traverse through the transition region if a sufficiently wide  
input swing is required.  
7.4.4 Design Optimization for Nanopower Operation  
When designing for ultra-low power, choose system components carefully. To minimize current consumption,  
select large-value resistors. Any resistors will react with stray capacitance in the circuit and the input capacitance  
of the operational amplifier. These parasitic RC combinations can affect the stability of the overall system. A  
feedback capacitor may be required to assure stability and limit overshoot or gain peaking.  
When possible, use AC coupling and AC feedback to reduce static current draw through the feedback elements.  
Use film or ceramic capacitors since large electolytics may have static leakage currents in the tens to hundreds  
of nanoamps.  
7.4.5 Common-Mode Rejection  
The CMRR for the TLV522 is specified in two ways so the best match for a given application may be used. First,  
the CMRR of the device in the common-mode range below the transition region (VCM < (V+) – 1.1 V) is given.  
This specification is the best indicator of the capability of the device when the application requires use of one of  
the differential input pairs. Second, the CMRR at VS = 3.3 V over the entire common-mode range is specified.  
7.4.6 Output Stage  
The TLV522 output voltage swings 3 mV from rails at 3.3 V supply, which provides the maximum possible  
dynamic range at the output. This is particularly important when operating on low supply voltages.  
The TLV522 Maximum Output Voltage Swing defines the maximum swing possible under a particular output  
load.  
7.4.7 Driving Capacitive Load  
The TLV522 is internally compensated for stable unity gain operation, with a 8 kHz typical gain bandwidth.  
However, the unity gain follower is the most sensitive configuration to capacitive load. The combination of a  
capacitive load placed directly on the output of an amplifier along with the amplifier’s output impedance creates a  
phase lag, which reduces the phase margin of the amplifier. If the phase margin is significantly reduced, the  
response will be under damped which causes peaking in the transfer and, when there is too much peaking, the  
op amp might start oscillating.  
10  
Copyright © 2016, Texas Instruments Incorporated  
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
Device Functional Modes (continued)  
In order to drive heavy (>50pF) capacitive loads, an isolation resistor, RISO, should be used, as shown in  
Figure 23. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output. The larger  
the value of RISO, the more stable the amplifier will be. If the value of RISO is sufficiently large, the feedback loop  
will be stable, independent of the value of CL. However, larger values of RISO result in reduced output swing and  
reduced output current drive.  
R
ISO  
-
V
OUT  
V
IN  
+
C
L
Figure 23. Resistive Isolation of Capacitive Load  
Copyright © 2016, Texas Instruments Incorporated  
11  
 
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The TLV522 is a ultra-low power operational amplifier that provides 8 kHz bandwidth with only 490 nA quiescent  
current, and near precision offset and drift specifications at a low cost. These rail-to-rail input and output  
amplifiers are specifically designed for battery-powered applications. The input common-mode voltage range  
extends to the power-supply rails and the output swings to within millivolts of the rails, maintaining a wide  
dynamic range.  
8.2 Typical Application: 60 Hz Twin "T" Notch Filter  
V
= 3V ç 2V @ end of life  
BATT  
CR2032 Coin Cell  
225 mAh = 5 circuits @ 9.5 yrs.  
10 MW  
10 MW  
V
BATT  
-
Remote Sensor  
To ADC  
V
OUT  
10 MW  
10 MW  
+
V
IN  
Signal  
+
60 Hz  
Signal × 2  
(No 60 Hz)  
270 pF  
270 pF  
60 Hz Twin T Notch Filter  
= 2 V/V  
10 MW  
10 MW  
A
V
270 pF  
270 pF  
Figure 24. 60 Hz Notch Filter  
8.2.1 Design Requirements  
Small signals from transducers in remote and distributed sensing applications commonly suffer strong 60 Hz  
interference from AC power lines. The circuit of Figure 24 notches out the 60 Hz and provides a gain AV = 2 for  
the sensor signal represented by a 1 kHz sine wave. Similar stages may be cascaded to remove 2nd and 3rd  
harmonics of 60 Hz. Thanks to the nA power consumption of the TLV522, even 5 such circuits can run for 9.5  
years from a small CR2032 lithium cell. These batteries have a nominal voltage of 3 V and an end of life voltage  
of 2 V. With an operating voltage from 1.7 V to 5.5 V the TLV522 can function over this voltage range.  
8.2.2 Detailed Design Procedure  
The notch frequency is set by:  
F0 = 1 / 2πRC.  
(2)  
To achieve a 60 Hz notch use R = 10 Mand C = 270 pF. If eliminating 50 Hz noise, which is common in  
European systems, use R = 11.8 Mand C = 270 pF.  
The Twin T Notch Filter works by having two separate paths from VIN to the amplifier’s input. A low frequency  
path through the series input resistors and another separate high frequency path through the series input  
capacitors. However, at frequencies around the notch frequency, the two paths have opposing phase angles and  
the two signals will tend to cancel at the amplifier’s input.  
12  
Copyright © 2016, Texas Instruments Incorporated  
 
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
Typical Application: 60 Hz Twin "T" Notch Filter (continued)  
To ensure that the target center frequency is achieved and to maximize the notch depth (Q factor) the filter  
needs to be as balanced as possible. To obtain circuit balance, while overcoming limitations of available  
standard resistor and capacitor values, use passives in parallel to achieve the 2C and R/2 circuit requirements  
for the filter components that connect to ground.  
To make sure passive component values stay as expected clean board with alcohol, rinse with deionized water,  
and air dry. Make sure board remains in a relatively low humidity environment to minimize moisture which may  
increase the conductivity of board components. Also large resistors come with considerable parasitic stray  
capacitance which effects can be reduced by cutting out the ground plane below components of concern.  
Large resistors are used in the feedback network to minimize battery drain. When designing with large resistors,  
resistor thermal noise, op amp current noise, as well as op amp voltage noise, must be considered in the noise  
analysis of the circuit. The noise analysis for the circuit in Figure 24 can be done over a bandwidth of 2 kHz,  
which takes the conservative approach of overestimating the bandwidth (TLV522 typical GBW/AV is lower). The  
total noise at the output is approximately 800 µVpp, which is excellent considering the total consumption of the  
circuit is only 900 nA. The dominant noise terms are op amp voltage noise , current noise through the feedback  
network (430 µVpp), and current noise through the notch filter network (280 µVpp). Thus the total circuit's noise  
is below 1/2 LSB of a 10-bit system with a 2 V reference, which is 1 mV.  
8.2.3 Application Curve  
Figure 25. 60 Hz Notch Filter Waveform  
8.3 Do's and Don'ts  
Do properly bypass the power supplies.  
Do add series resistance to the output when driving capacitive loads, particularly cables, MUX and ADC inputs.  
Do add series current limiting resistors and external schottky clamp diodes if input voltage is expected to exceed  
the supplies. Limit the current to 1 mA or less (1 KΩ per volt).  
Copyright © 2016, Texas Instruments Incorporated  
13  
TLV522  
ZHCSF26 MAY 2016  
www.ti.com.cn  
9 Power Supply Recommendations  
The TLV522 is specified for operation from 1.7 V to 5.5 V (±0.85 V to ±2.75 V) over a –40°C to 125°C  
temperature range. Parameters that can exhibit significant variance with regard to operating voltage or  
temperature are presented in the Typical Characteristics.  
CAUTION  
Supply voltages larger than 6 V can permanently damage the device.  
For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines it is  
suggested that 10 nF capacitors be placed as close as possible to the operational amplifier power supply pins.  
For single supply, place a capacitor between V+ and Vsupply leads. For dual supplies, place one capacitor  
between V+ and ground, and one capacitor between Vand ground.  
If your application expects signals above (> 1 kHz) we recommend you use extra supply filtering.  
Extra filtering on the power supply input is recommended when presence of signals with frequency above one  
kHz (> 1 kHz) on the line is expected. Example of such signal sources are high-frequency switching supplies.  
10 Layout  
10.1 Layout Guidelines  
The V+ pin should be bypassed to ground with a low ESR capacitor.  
The optimum placement is closest to the V+ and ground pins.  
Care should be taken to minimize the loop area formed by the bypass capacitor connection between V+ and  
ground.  
The ground pin should be connected to the PCB ground plane at the pin of the device.  
The feedback components should be placed as close to the device as possible to minimize strays.  
There is an internal electrical connection between the exposed Die Attach Pad (DAP) and the Vpin. For best  
performance the DAP should be connected to the exact same potential as the Vpin. Do not use the DAP as the  
primary Vsupply. Floating the DAP pad is not recommended. The DAP and Vpin should be joined directly as  
shown in the Layout Example.  
10.2 Layout Example  
Place components close to  
device and to each other to  
VOUTA  
reduce parasitic error  
Place low-ESR ceramic  
bypass capacitor close to  
device  
Run the input traces as  
far away from the supply  
lines as possible  
V+  
GND  
OUTA  
RG  
-INA  
+INA  
V-  
OUTB  
-INB  
GND  
VIN  
+INB  
Place low-ESR ceramic  
bypass capacitor close to  
device  
GND  
VS-  
Figure 26. Layout Example (Top View)  
14  
版权 © 2016, Texas Instruments Incorporated  
 
TLV522  
www.ti.com.cn  
ZHCSF26 MAY 2016  
11 器件和文档支持  
11.1 器件支持  
11.1.1 开发支持  
TINA-TI 基于 SPICE 的模拟仿真程序,http://www.ti.com.cn/tool/cn/tina-ti  
DIP 适配器评估模块,http://www.ti.com.cn/tool/cn/dip-adapter-evm  
TI 通用运行放大器评估模块,http://www.ti.com.cn/tool/cn/opampevm  
TI FilterPro 滤波器设计软件,http://www.ti.com.cn/tool/cn/filterpro  
11.2 文档支持  
11.2.1 相关文档ꢀ  
相关文档如下:  
AN-1798《设计电化学传感器》,SNOA514  
AN-1803《互阻抗放大器设计注意事项》,SNOA515  
AN-1852《设计 pH 电极》,SNOA529  
《直观补偿互阻抗放大器》,SBOA055  
《高速运算放大器互阻抗注意事项》,SBOA112  
FET 互阻抗放大器噪声分析》,SBOA060  
《电路板布局布线技巧》,SLOA089  
《运算放大器应用 手册》,SBOA092  
11.3 社区资源  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
11.4 商标  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.5 静电放电警告  
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损  
伤。  
11.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
12 机械、封装和可订购信息  
以下页中包括机械封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对本  
文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本,请查阅左侧的导航栏。  
版权 © 2016, Texas Instruments Incorporated  
15  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jul-2023  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TLV522DGKR  
TLV522DGKT  
ACTIVE  
VSSOP  
VSSOP  
DGK  
8
8
2500 RoHS & Green  
250 RoHS & Green  
NIPDAUAG | SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
SL  
V522  
Samples  
Samples  
ACTIVE  
DGK  
NIPDAUAG | SN  
SL  
V522  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jul-2023  
Addendum-Page 2  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
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