SN74GTL2010PWR [TI]

10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR; 10位双向低电压转换
SN74GTL2010PWR
型号: SN74GTL2010PWR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR
10位双向低电压转换

文件: 总15页 (文件大小:149K)
中文:  中文翻译
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GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
www.ti.com  
SCDS221SEPTEMBER 2006  
FEATURES  
PW PACKAGE  
Provides Bidirectional Voltage Translation  
With No Direction Control Required  
(TOP VIEW)  
GND  
G
D
1
2
24  
23  
22  
REF  
Allows Voltage Level Translation From 1 V up  
to 5 V  
S
REF  
REF  
Provides Direct Interface With GTL, GTL+,  
LVTTL/TTL, and 5-V CMOS Levels  
S1 3  
D1  
S2  
S3  
S4  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
D9  
D10  
4
5
6
21  
20  
Low On-State Resistance Between Input and  
Output Pins (Sn/Dn)  
19  
18  
17  
Supports Hot Insertion  
S5 7  
No Power Supply Required – Will Not Latch  
Up  
8
S6  
S7  
9
5-V-Tolerant Inputs  
16  
15  
10  
11  
12  
Low Standby Current  
S8  
Flow-Through Pinout for Ease of Printed  
Circuit Board Trace Routing  
14  
13  
S9  
S10  
ESD Protection Exceeds JESD 22  
– 2000-V Human-Body Model (A114-4)  
– 1000-V Charged-Device Model (C101)  
APPLICATIONS  
Bidirectional or Unidirectional Applications  
Requiring Voltage-Level Translation From  
Any Voltage (1 V to 5 V) to Any Voltage (1 V  
to 5 V)  
Low Voltage Processor I2C Port Translation  
to 3.3-V and/or 5-V I2C Bus Signal Levels  
GTL/GTL+ Translation to LVTTL/TTL Signal  
Levels  
DESCRIPTION/ORDERING INFORMATION  
The GTL2010 provides ten NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference  
transistor (SREF and DREF). The low ON-state resistance of the switch allows connections to be made with  
minimal propagation delay. With no direction control pin required, the device allows bidirectional voltage  
translations any voltage (1 V to 5 V) to any voltage (1 V to 5 V).  
When the Sn or Dn port is LOW, the clamp is in the ON state and a low-resistance connection exists between  
the Sn and Dn ports. Assuming the higher voltage is on the Dn port, when the Dn port is HIGH, the voltage on  
the Sn port is limited to the voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port  
is pulled to VCC by the pullup resistors.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
www.ti.com  
SCDS221SEPTEMBER 2006  
DESCRIPTION/ORDERING INFORMATION (CONTINUED)  
All transistors in the GTL2010 have the same electrical characteristics, and there is minimal deviation from one  
output to another in voltage or propagation delay. This offers superior matching over discrete transistor  
voltage-translation solutions where the fabrication of the transistors is not symmetrical. With all transistors being  
identical, the reference transistor (SREF/DREF) can be located on any of the other ten matched Sn/Dn transistors,  
allowing for easier board layout. The translator transistors with integrated ESD circuitry provides excellent ESD  
protection.  
ORDERING INFORMATION  
TA  
PACKAGE(1)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
GK2010  
–40°C to 85°C  
TSSOP – PW  
Tape and reel  
SN74GTL2010PWR  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
PIN DESCRIPTION  
PIN NO.  
NAME  
GND  
SREF  
Sn  
DESCRIPTION  
1
2
Ground (0 V)  
Source of reference transistor  
Ports S1–10  
3–12  
13–22  
23  
Dn  
Ports D10–D1  
DREF  
GREF  
Drain of reference transistor  
Gate of reference transistor  
24  
2
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GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
FUNCTION TABLES(1)  
ABC  
HIGH-to-LOW Translation (Assuming Dn is at the Higher Voltage Level)  
INPUTS  
D10–D1  
OUTPUTS  
S10–S1  
(2)  
GREF  
DREF  
SREF  
TRANSISTOR  
H
H
H
L
H
H
H
L
0 V  
X
H
L
X
Off  
On  
On  
Off  
(3)  
(4)  
VTT  
VTT  
L(5)  
VTT  
0 – VTT  
X
X
(1) H = HIGH voltage level, L = LOW voltage level, X = don't care  
(2) GREF should be at least 1.5 V higher than SREF for best translator operation.  
(3) VTT is equal to the SREF voltage.  
(4) Sn is not pulled up or pulled down.  
(5) Sn follows the Dn input LOW.  
LOW-to-HIGH Translation (Assuming Dn is at the Higher Voltage Level)(1)  
INPUTS  
D10–D1  
OUTPUTS  
S10–S1  
(2)  
GREF  
DREF  
SREF  
TRANSISTOR  
H
H
H
L
H
H
H
L
0 V  
X
VTT  
L
X
H(4)  
L(5)  
X
Off  
Nearly off  
On  
(3)  
VTT  
VTT  
0 – VTT  
X
Off  
(1) H = HIGH voltage level, L = LOW voltage level, X = don't care  
(2) GREF should be at least 1.5 V higher than SREF for best translator operation.  
(3) VTT is equal to the SREF voltage.  
(4) Dn is pulled up to VCC through an external resistor.  
(5) Dn follows the Sn input LOW.  
CLAMP SCHEMATIC  
D
REF  
G
D1  
D10  
REF  
S
S1  
S10  
REF  
SA00647  
3
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GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
Absolute Maximum Ratings(1)(2)(3)  
MIN  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
MAX  
UNIT  
VSREF  
VDREF  
VGREF  
VSn  
DC source reference voltage  
DC drain reference voltage  
DC gate reference voltage  
DC voltage port Sn  
7
V
7
7
V
V
7
V
VDn  
DC voltage port Dn  
7
V
IREFK  
ISK  
DC diode current on reference pins  
DC diode current port Sn  
DC diode current port Dn  
DC clamp current per channel  
Package thermal impedance  
Storage temperature range  
VI < 0 V  
–50  
–50  
–50  
±128  
88  
mA  
mA  
mA  
mA  
°C/W  
°C  
VI < 0 V  
IDK  
VI < 0 V  
IMAX  
θJA  
Channel in ON state  
Tstg  
–65  
150  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures that are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.  
(3) The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.  
Recommended Operating Conditions  
MIN  
0
MAX UNIT  
VI/O  
Input/output voltage (Sn, Dn)  
DC source reference voltage(1)  
DC drain reference voltage  
5.5  
5.5  
5.5  
5.5  
64  
V
V
VSREF  
VDREF  
VGREF  
IPASS  
Tamb  
0
0
V
DC gate reference voltage  
0
V
Pass transistor current  
mA  
°C  
Operating ambient temperature range (in free air)  
–40  
85  
(1) VSREF = VDREF – 1.5 V for best results in level-shifting applications.  
4
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GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
Electrical Characteristics  
over recommended operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP(1)  
MAX UNIT  
VDD = 3 V, VSREF = 1.365 V, VSn or VDn = 0.175 V,  
Iclamp = 15.2 mA  
VOL  
Low-level output voltage  
260  
350  
mV  
VIK  
IIH  
Input clamp voltage  
Gate input leakage  
II = –18 mA,  
VGREF = 0 V  
VGREF = 0 V  
–1.2  
5
V
VI = 5 V,  
µA  
pF  
pF  
pF  
CI(GREF) Gate capacitance  
CIO(OFF) OFF capacitance  
VI = 3 V or 0 V  
VO = 3 V or 0 V,  
VO = 3 V or 0 V,  
56  
7.4  
18.6  
3.5  
4.4  
5.5  
67  
VGREF = 0 V  
VGREF = 3 V  
VGREF = 4.5 V  
VGREF = 3 V  
VGREF = 2.3 V  
VGREF = 1.5 V  
VGREF = 1.5 V,  
VGREF = 4.5 V  
VGREF = 3 V  
VGREF = 2.3 V  
CIO(ON)  
ON capacitance  
5
7
IO = 64 mA  
VI = 0 V  
9
105  
15  
10  
80  
70  
(2)  
ron  
ON-state resistance  
IO = 30 mA  
IO = 15 mA  
9
7
VI = 2.4 V  
VI = 1.7 V  
58  
50  
(1) All typical values are measured at Tamb = 25°C.  
(2) Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. On-state resistance is  
determined by the lowest voltage of the two (Sn or Dn) terminals.  
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10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
AC Characteristics for Translator-Type Applications(1)  
VREF = 1.365 V to 1.635 V, VDD1 = 3 V to 3.6 V, VDD2 = 2.36 V to 2.64 V, GND = 0 V, tr = tf 3 ns, Tamb = –40°C to 85°C  
(see Figure 5)  
PARAMETER  
MIN TYP(2)  
0.5 1.5  
MAX UNIT  
5.5 ns  
(3)  
tPLH  
Propagation delay (Sn to Dn, Dn to Sn)  
(1) CON(max) of 30 pF and a COFF(max) of 15 pF is specified by design.  
(2) All typical values are measured at VDD1 = 3.3 V, VDD2 = 2.5 V, VREF = 1.5 V and Tamb = 25°C.  
(3) Propagation delay specified by characterization.  
AC Waveforms  
Vm = 1.5 V, V = GND to 3 V  
IN  
V
I
V
V
M
Input  
GND  
M
t
t
PHL0  
PLH0  
V
DD2  
V
M
Low-to-High  
V
M
V
OL  
t
t
PHL  
PLH  
PLH1  
t
t
PHL1  
V
DD2  
V
M
V
M
Low-to-High  
V
OL  
Figure 1. Input (Sn) to Output (Dn) Propagation Delays  
V
DD2  
V
DD2  
V
DD2  
V
DD2  
200 W  
150 W  
150 W  
150 W  
DUT  
G
D
REF  
REF  
D1 . . . D10  
S
REF  
S1 . . . S10  
Test  
Jig  
V
REF  
Pulse  
Generator  
Figure 2. Load Circuit  
6
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GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
www.ti.com  
SCDS221SEPTEMBER 2006  
AC Characteristics for CBT-Type Applications  
GND = 0 V, tR, CL = 50 pF, GREF = 5 V ± 0.5 V, Tamb = –40°C to 85°C  
PARAMETER  
MIN  
MAX UNIT  
250 ps  
tpd  
Propagation delay(1)  
(1) This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical on-state  
resistance of the switch and a load capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance).  
AC Waveforms  
3 V  
1.5 V  
1.5 V  
Input  
0 V  
t
t
PHL  
PLH  
V
OH  
1.5 V  
1.5 V  
Output  
V
OL  
Figure 3. Input (Sn) to Output (Dn) Propagation Delays  
7 V  
500 W  
From Ouput  
Under Test  
S1  
C
L
= 50 pF  
500 W  
Load Circuit  
TEST  
S1  
t
Open  
7 V  
pd  
t
/t  
PLZ PZL  
t
/t  
Open  
PHZ PZH  
C = Load capacitance, includes jig and probe capacitance  
L
(see AC Characteristics for value).  
Figure 4. Load Circuit  
7
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10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
APPLICATION INFORMATION  
Bidirectional Translation  
For the bidirectional clamping configuration (higher voltage to lower voltage or lower voltage to higher voltage),  
the GREF input must be connected to DREF and both pins pulled to HIGH-side VCC through a pullup resistor  
(typically 200 k). A filter capacitor on DREF is recommended. The processor output can be totem pole or open  
drain (pullup resistors) and the chipset output can be totem pole or open drain (pullup resistors are required to  
pull the Dn outputs to VCC). However, if either output is totem pole, data must be unidirectional or the outputs  
must be 3-statable, and the outputs must be controlled by some direction-control mechanism to prevent  
HIGH-to-LOW contentions in either direction. If both outputs are open drain, no direction control is needed. The  
opposite side of the reference transistor (SREF) is connected to the processor core power-supply voltage. When  
DREF is connected through a 200-kresistor to a 3.3-V to 5.5-V VCC supply and SREF is set between 1 V to VCC  
1.5 V, the output of each Sn has a maximum output voltage equal to SREF, and the output of each Dn has a  
maximum output voltage equal to VCC  
.
8
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10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
APPLICATION INFORMATION (continued)  
VDPU = 5V  
200K Ω  
VREF = 1.8V  
GTL2010  
GREF  
DREF  
RPU  
RPU  
SREF  
RPU  
RPU  
S1  
S2  
D1  
D2  
SW  
SW  
CPU I/O  
Chipset  
I/O  
VDPU = 3.3V  
RPU  
RPU  
S9  
D9  
Chipset  
I/O  
S10  
D10  
GND  
Figure 5. Bidirectional Translation to Multiple Higher Voltage Levels (Such as an I2C or SMBus  
Applications)  
9
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10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
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SCDS221SEPTEMBER 2006  
APPLICATION INFORMATION (continued)  
Unidirectional Down Translation  
For unidirectional clamping (higher voltage to lower voltage), the GREF input must be connected to DREF and both  
pins pulled to the higher-side VCC through a pullup resistor (typically 200 k). A filter capacitor on DREF is  
recommended. Pullup resistors are required if the chipset I/Os are open drain. The opposite side of the  
reference transistor (SREF) is connected to the processor core power-supply voltage. When DREF is connected  
through a 200-kresistor to a 3.3-V to 5.5-V VCC supply and SREF is set between 1 V to VCC – 1.5 V, the output  
of each Sn has a maximum output voltage equal to SREF  
.
VDPU = 5V  
200K Ω  
GTL2010  
VREF = 1.8V  
GREF  
DREF  
SREF  
S1  
S2  
D1  
SW  
SW  
CPU I/O  
Chipset  
I/O  
D2  
Dn  
Sn  
GND  
Figure 6. Unidirectional Down Translation to Protect Low-Voltage Processor Pins  
10  
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SCDS221SEPTEMBER 2006  
APPLICATION INFORMATION (continued)  
Unidirectional Up Translation  
For unidirectional up translation (lower voltage to higher voltage), the reference transistor is connected the same  
as for a down translation. A pullup resistor is required on the higher voltage side (Dn or Sn) to get the full HIGH  
level, since the GTL device only passes the reference source (SREF) voltage as a HIGH when doing an up  
translation. The driver on the lower voltage side only needs pullup resistors if it is open drain.  
VDPU = 5V  
200K Ω  
GTL2010  
VREF = 1.8V  
GREF  
DREF  
RPU  
RPU  
SREF  
RPU  
RPU  
S1  
D1  
SW  
SW  
CPU I/O  
Chipset  
I/O  
S2  
Sn  
D2  
Dn  
GND  
Figure 7. Unidirectional Up Translation to Higher-Voltage Chipsets  
11  
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SCDS221SEPTEMBER 2006  
APPLICATION INFORMATION (continued)  
Sizing Pullup Resistor  
The pullup resistor value should limit the current through the pass transistor when it is in the on state to about  
15 mA. This ensures a pass voltage of 260 mV to 350 mV. If the current through the pass transistor is higher  
than 15 mA, the pass voltage also is higher in the on state. To set the current through each pass transistor at  
15 mA, the pullup resistor value is calculated as:  
Pullup voltage (V) * 0.35 V  
( )  
Resistor value W +  
0.015 A  
Table 1 shows resistor values for various reference voltages and currents at 15 mA, 10 mA, and 3 mA. The  
resistor value shown in the +10% column, or a larger value, should be used to ensure that the pass voltage of  
the transistor would be 350 mV or less. The external driver must be able to sink the total current from the  
resistors on both sides of the GTL device at 0.175 V, although the 15 mA only applies to current flowing through  
the GTL2010.  
Table 1. Pullup Resistor Values(1)(2)(3)  
PULLUP RESISTOR VALUE ()  
15 mA  
10 mA  
3 mA  
VOLTAGE  
NOMINAL  
310  
+10%  
341  
217  
158  
106  
85  
NOMINAL  
465  
+10%  
512  
325  
237  
160  
127  
94  
NOMINAL  
1550  
983  
+10%  
1705  
1082  
788  
5.0 V  
3.3 V  
2.5 V  
1.8 V  
1.5 V  
1.2 V  
197  
295  
143  
215  
717  
97  
145  
483  
532  
77  
115  
383  
422  
57  
63  
85  
283  
312  
(1) Calculated for VOL = 0.35 V  
(2) Assumes output driver VOL = 0.175 V at stated current  
(3) +10% to compensate for VDD range and resistor tolerance  
12  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
6-Dec-2006  
PACKAGING INFORMATION  
Orderable Device  
SN74GTL2010PW  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
TSSOP  
PW  
24  
24  
24  
24  
60 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
SN74GTL2010PWE4  
SN74GTL2010PWR  
SN74GTL2010PWRE4  
TSSOP  
TSSOP  
TSSOP  
PW  
PW  
PW  
60 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
MECHANICAL DATA  
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999  
PW (R-PDSO-G**)  
PLASTIC SMALL-OUTLINE PACKAGE  
14 PINS SHOWN  
0,30  
0,19  
M
0,10  
0,65  
14  
8
0,15 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
0,25  
1
7
0°8°  
A
0,75  
0,50  
Seating Plane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
8
14  
16  
20  
24  
28  
DIM  
3,10  
2,90  
5,10  
4,90  
5,10  
4,90  
6,60  
6,40  
7,90  
9,80  
9,60  
A MAX  
A MIN  
7,70  
4040064/F 01/97  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.  
D. Falls within JEDEC MO-153  
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