LM833M [TI]
LM833-N Dual Audio Operational Amplifier; LM833 -N双路音频运算放大器
| 型号： | LM833M |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | LM833-N Dual Audio Operational Amplifier |
| 文件： | 总24页 (文件大小：1863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM833-N
www.ti.com
SNOSBD8E –MAY 2004–REVISED MAY 2012
LM833-N Dual Audio Operational Amplifier
Check for Samples: LM833-N
1
FEATURES
DESCRIPTION
The LM833-N is a dual general purpose operational
amplifier designed with particular emphasis on
performance in audio systems.
2
•
•
•
•
Wide Dynamic Range: >140dB
Low Input Noise Voltage: 4.5nV/√Hz
High Slew Rate: 7 V/μs (typ); 5V/μs (Min)
This dual amplifier IC utilizes new circuit and
processing techniques to deliver low noise, high
speed and wide bandwidth without increasing
external components or decreasing stability. The
LM833-N is internally compensated for all closed loop
gains and is therefore optimized for all preamp and
high level stages in PCM and HiFi systems.
High Gain Bandwidth: 15MHz (typ); 10MHz
(Min)
•
•
•
•
•
Wide Power Bandwidth: 120KHz
Low Distortion: 0.002%
Low Offset Voltage: 0.3mV
Large Phase Margin: 60°
The LM833-N is pin-for-pin compatible with industry
standard dual operational amplifiers.
Available in 8 Pin VSSOP Package
Schematic Diagram
(1/2 LM833-N)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2012, Texas Instruments Incorporated
LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012
www.ti.com
Connection Diagram
Figure 1. See Package Number D0008A, P0008E or DGK0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)
Supply Voltage VCC–VEE
36V
±30V
Differential Input Voltage(3) VI
Input Voltage Range(3) VIC
Power Dissipation(4) PD
±15V
500 mW
−40 ∼ 85°C
−60 ∼ 150°C
260°C
Operating Temperature Range TOPR
Storage Temperature Range TSTG
Soldering Information
PDIP Package
Small Outline Package (SOIC and VSSOP)
Soldering (10 seconds)
Vapor Phase (60 seconds)
Infrared (15 seconds)
215°C
220°C
(5)
ESD tolerance
1600V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) If supply voltage is less than ±15V, it is equal to supply voltage.
(4) This is the permissible value at TA ≤ 85°C.
(5) Human body model, 1.5 kΩ in series with 100 pF.
2
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SNOSBD8E –MAY 2004–REVISED MAY 2012
DC ELECTRICAL CHARACTERISTICS(1)(2)
(TA = 25°C, VS = ±15V)
Symbol
VOS
IOS
IB
Parameter
Input Offset Voltage
Conditions
Min
Typ
0.3
Max
5
Units
mV
nA
nA
dB
V
RS = 10Ω
Input Offset Current
Input Bias Current
Voltage Gain
10
200
1000
500
110
±13.5
±13.4
±14.0
100
100
5
AV
RL = 2 kΩ, VO = ±10V
RL = 10 kΩ
90
±12
±12
±12
80
VOM
Output Voltage Swing
RL = 2 kΩ
V
VCM
Input Common-Mode Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Supply Current
V
CMRR
PSRR
IQ
VIN = ±12V
dB
dB
mA
VS = 15 ∼ 5V, −15 ∼ −5V
VO = 0V, Both Amps
80
8
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) All voltages are measured with respect to the ground pin, unless otherwise specified.
AC ELECTRICAL CHARACTERISTICS
(TA = 25°C, VS = ±15V, RL = 2 kΩ)
Symbol
Parameter
Conditions
RL = 2 kΩ
Min
5
Typ
7
Max
Units
V/μs
MHz
SR
Slew Rate
GBW
Gain Bandwidth Product
f = 100 kHz
10
15
Equivalent Input Noise Voltage
(LM833AM, LM833AMX)
VNI
RIAA, RS = 2.2 kΩ(1)
1.4
μV
(1) RIAA Noise Voltage Measurement Circuit
DESIGN ELECTRICAL CHARACTERISTICS
(TA = 25°C, VS = ±15V)
The following parameters are not tested or ensured.
Symbol
Parameter
Average Temperature Coefficient
of Input Offset Voltage
Distortion
Conditions
Typ
Units
ΔVOS/ΔT
2
μV/°C
THD
RL = 2 kΩ, f = 20∼20 kHz
0.002
%
VOUT = 3 Vrms, AV = 1
RS = 100Ω, f = 1 kHz
f = 1 kHz
en
Input Referred Noise Voltage
Input Referred Noise Current
Power Bandwidth
4.5
0.7
120
9
nV / √Hz
pA / √Hz
kHz
in
PBW
fU
VO = 27 Vpp, RL = 2 kΩ, THD ≤ 1%
Open Loop
Unity Gain Frequency
Phase Margin
MHz
φM
Open Loop
60
deg
Input Referred Cross Talk
f = 20∼20 kHz
−120
dB
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TYPICAL PERFORMANCE CHARACTERISTICS
Maximum Power
Input Bias Current vs
Ambient Temperature
Dissipation
vs Ambient Temperature
Figure 2.
Figure 3.
Input Bias Current vs
Supply Voltage
Supply Current vs
Supply Voltage
Figure 4.
Figure 5.
DC Voltage Gain
vs Ambient Temperature
DC Voltage Gain
vs Supply Voltage
Figure 6.
Figure 7.
4
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LM833-N
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SNOSBD8E –MAY 2004–REVISED MAY 2012
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Voltage Gain & Phase
vs Frequency
Gain Bandwidth Product
vs Ambient Temperature
Figure 8.
Figure 9.
Gain Bandwidth
vs Supply Voltage
Slew Rate vs
Ambient Temperature
Figure 10.
Figure 11.
Slew Rate vs
Supply Voltage
Power Bandwidth
Figure 12.
Figure 13.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMR vs Frequency
Distortion vs Frequency
Figure 14.
Figure 15.
Maximum
Output Voltage vs
Supply Voltage
PSRR vs Frequency
Figure 16.
Figure 17.
Maximum
Output Voltage vs
Ambient Temperature
Spot Noise Voltage
vs Frequency
Figure 18.
Figure 19.
6
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LM833-N
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SNOSBD8E –MAY 2004–REVISED MAY 2012
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Spot Noise Current
vs Frequency
Input Referred Noise Voltage
vs Source Resistance
Figure 20.
Figure 21.
Noninverting Amp
Noninverting Amp
Figure 22.
Figure 23.
Inverting Amp
Figure 24.
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LM833-N
SNOSBD8E –MAY 2004–REVISED MAY 2012
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APPLICATION HINTS
The LM833-N is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 50 pF will
cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 50 pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
Noise Measurement Circuit
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 25. Total Gain: 115 dB @f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
8
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SNOSBD8E –MAY 2004–REVISED MAY 2012
RIAA Noise Voltage Measurement Circuit
RIAA Preamp Voltage Gain, RIAA
Deviation vs Frequency
Flat Amp Voltage Gain vs
Frequency
Figure 26.
Figure 27.
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SNOSBD8E –MAY 2004–REVISED MAY 2012
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Typical Applications
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 28. NAB Preamp
Figure 29. NAB Preamp Voltage Gain vs Frequency
VO = V1–V2
Figure 30. Balanced to Single Ended Converter
10
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SNOSBD8E –MAY 2004–REVISED MAY 2012
VO = V1 + V2 − V3 − V4
Figure 31. Adder/Subtracter
Figure 32. Sine Wave Oscillator
Illustration is f0 = 1 kHz
Figure 33. Second Order High Pass Filter (Butterworth)
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Illustration is f0 = 1 kHz
Figure 34. Second Order Low Pass Filter (Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 35. State Variable Filter
Figure 36. AC/DC Converter
12
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SNOSBD8E –MAY 2004–REVISED MAY 2012
Figure 37. 2 Channel Panning Circuit (Pan Pot)
Figure 38. Line Driver
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SNOSBD8E –MAY 2004–REVISED MAY 2012
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Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 39. Tone Control
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 40. RIAA Preamp
14
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SNOSBD8E –MAY 2004–REVISED MAY 2012
Illustration is:
V0 = 101(V2 − V1)
Figure 41. Balanced Input Mic Amp
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SNOSBD8E –MAY 2004–REVISED MAY 2012
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Figure 42. 10 Band Graphic Equalizer
fo (Hz)
32
C1
C2
R1
R2
0.12μF
0.056μF
0.033μF
0.015μF
8200pF
3900pF
2000pF
1100pF
510pF
4.7μF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
3.3μF
125
250
500
1k
1.5μF
0.82μF
0.39μF
0.22μF
0.1μF
2k
4k
0.056μF
0.022μF
0.012μF
8k
16k
330pF
Note: At volume of change = ±12
dB Q = 1.
LM833-N MDC MWC DUAL AUDIO OPERATIONAL AMPLIFIER
Figure 43. Die Layout (A - Step)
16
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
LM833M
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Top-Side Markings
Samples
Drawing
Qty
(1)
(2)
(3)
(4)
ACTIVE
SOIC
SOIC
D
8
8
95
TBD
Call TI
CU SN
Call TI
LM833
M
LM833M/NOPB
ACTIVE
D
95
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 85
LM833
M
LM833MM
ACTIVE
ACTIVE
VSSOP
VSSOP
DGK
DGK
8
8
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
Z83
LM833MM/NOPB
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Z83
LM833MMX/NOPB
LM833MX
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VSSOP
SOIC
SOIC
PDIP
DGK
D
8
8
8
8
8
3500
2500
2500
40
Green (RoHS
& no Sb/Br)
CU SN
Call TI
CU SN
Call TI
Call TI
Level-1-260C-UNLIM
Call TI
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
Z83
TBD
LM833
M
LM833MX/NOPB
LM833N
D
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Call TI
LM833
M
P
TBD
LM
833N
LM833N/NOPB
PDIP
P
40
Green (RoHS
& no Sb/Br)
Level-1-NA-UNLIM
LM
833N
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM833MM
LM833MM/NOPB
LM833MMX/NOPB
LM833MX
VSSOP
VSSOP
VSSOP
SOIC
DGK
DGK
DGK
D
8
8
8
8
8
1000
1000
3500
2500
2500
178.0
178.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
12.4
5.3
5.3
5.3
6.5
6.5
3.4
3.4
3.4
5.4
5.4
1.4
1.4
1.4
2.0
2.0
8.0
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
LM833MX/NOPB
SOIC
D
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Mar-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM833MM
LM833MM/NOPB
LM833MMX/NOPB
LM833MX
VSSOP
VSSOP
VSSOP
SOIC
DGK
DGK
DGK
D
8
8
8
8
8
1000
1000
3500
2500
2500
210.0
210.0
367.0
367.0
367.0
185.0
185.0
367.0
367.0
367.0
35.0
35.0
35.0
35.0
35.0
LM833MX/NOPB
SOIC
D
Pack Materials-Page 2
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