LM833MM [NSC]
Dual Audio Operational Amplifier; 双路音频运算放大器
| 型号： | LM833MM |
| 厂家： | 
National Semiconductor |
| 描述： | Dual Audio Operational Amplifier |
| 文件： | 总18页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2003
LM833
Dual Audio Operational Amplifier
General Description
Features
The LM833 is a dual general purpose operational amplifier
designed with particular emphasis on performance in audio
systems.
>
j
Wide dynamic range:
140dB
j
Low input noise
√
voltage:
4.5nV/ Hz
This dual amplifier IC utilizes new circuit and processing
techniques to deliver low noise, high speed and wide band-
width without increasing external components or decreasing
stability. The LM833 is internally compensated for all closed
loop gains and is therefore optimized for all preamp and high
level stages in PCM and HiFi systems.
j
j
j
j
j
j
j
High slew rate:
7 V/µs (typ); 5V/µs (min)
High gain bandwidth:
Wide power bandwidth:
Low distortion:
15MHz (typ); 10MHz (min)
120KHz
0.002%
0.3mV
60˚
Low offset voltage:
Large phase margin:
Available in 8 pin MSOP
The LM833 is pin-for-pin compatible with industry standard
dual operational amplifiers.
package
Schematic Diagram (1/2 LM833)
00521801
© 2004 National Semiconductor Corporation
DS005218
www.national.com
Connection Diagram
00521802
Order Number LM833M, LM833MX, LM833N, LM833MM or LM833MMX
See NS Package Number
M08A, N08E or MUA08A
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2
Absolute Maximum Ratings (Note 1)
Storage Temperature Range TSTG
Soldering Information
−60 ∼ 150˚C
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Dual-In-Line Package
Soldering (10 seconds)
Small Outline Package
(SOIC and MSOP)
260˚C
Supply Voltage VCC–VEE
36V
30V
Differential Input Voltage (Note 3) VI
Input Voltage Range (Note 3) VIC
Power Dissipation (Note 4) PD
Operating Temperature Range TOPR
Vapor Phase (60 seconds)
Infrared (15 seconds)
215˚C
220˚C
1600V
15V
500 mW
−40 ∼ 85˚C
ESD tolerance (Note 5)
DC Electrical Characteristics (Notes 1, 2)
(TA = 25˚C, VS
=
15V)
Symbol
Parameter
Conditions
RS = 10Ω
Min
Typ
0.3
Max
5
Units
mV
nA
nA
dB
V
VOS
IOS
IB
Input Offset Voltage
Input Offset Current
Input Bias Current
Voltage Gain
10
200
1000
500
110
13.5
13.4
14.0
100
100
5
AV
RL = 2 kΩ, VO
RL = 10 kΩ
RL = 2 kΩ
=
10V
90
12
10
12
80
80
VOM
Output Voltage Swing
V
VCM
Input Common-Mode Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Supply Current
V
CMRR
PSRR
IQ
VIN
=
12V
dB
dB
mA
VS = 15∼5V, −15∼−5V
VO = 0V, Both Amps
8
AC Electrical Characteristics
(TA = 25˚C, VS
=
15V, RL = 2 kΩ)
Symbol
Parameter
Conditions
RL = 2 kΩ
Min
5
Typ
7
Max
Units
V/µs
MHz
SR
GBW
Slew Rate
Gain Bandwidth Product
f = 100 kHz
10
15
Design Electrical Characteristics
(TA = 25˚C, VS
=
15V) The following parameters are not tested or guaranteed.
Parameter Conditions
Symbol
Typ
Units
∆VOS/∆T
Average Temperature Coefficient
of Input Offset Voltage
Distortion
2
µV/˚C
THD
RL = 2 kΩ, f = 20∼20 kHz
VOUT = 3 Vrms, AV = 1
RS = 100Ω, f = 1 kHz
0.002
%
en
in
Input Referred Noise Voltage
Input Referred Noise Current
4.5
0.7
f = 1 kHz
PBW
fU
Power Bandwidth
VO = 27 Vpp, RL = 2 kΩ, THD ≤ 1%
Open Loop
120
9
kHz
MHz
deg
dB
Unity Gain Frequency
Phase Margin
φM
Open Loop
60
Input Referred Cross Talk
f = 20∼20 kHz
−120
3
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Design Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 3: If supply voltage is less than 15V, it is equal to supply voltage.
Note 4: This is the permissible value at T ≤ 85˚C.
A
Note 5: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
Maximum Power
Dissipation
Input Bias Current vs
Ambient Temperature
vs Ambient Temperature
00521804
00521805
Input Bias Current vs
Supply Voltage
Supply Current vs
Supply Voltage
00521806
00521807
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4
Typical Performance Characteristics (Continued)
DC Voltage Gain
vs Ambient Temperature
DC Voltage Gain
vs Supply Voltage
00521808
00521809
Voltage Gain & Phase
vs Frequency
Gain Bandwidth Product
vs Ambient Temperature
00521810
00521811
Gain Bandwidth
Slew Rate vs
vs Supply Voltage
Ambient Temperature
00521812
00521813
5
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Typical Performance Characteristics (Continued)
Slew Rate vs
Power Bandwidth
Supply Voltage
00521815
00521814
CMR vs Frequency
Distortion vs Frequency
00521819
00521820
Maximum
Output Voltage vs
Supply Voltage
PSRR vs Frequency
00521816
00521818
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6
Typical Performance Characteristics (Continued)
Maximum
Output Voltage vs
Ambient Temperature
Spot Noise Voltage
vs Frequency
00521817
00521821
Spot Noise Current
vs Frequency
Input Referred Noise Voltage
vs Source Resistance
00521822
00521823
Noninverting Amp
Noninverting Amp
00521824
00521825
7
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Typical Performance Characteristics (Continued)
Inverting Amp
00521826
a resistor in series with the output. This resistor will also
prevent excess power dissipation if the output is accidentally
shorted.
Application Hints
The LM833 is a high speed op amp with excellent phase
margin and stability. Capacitive loads up to 50 pF will cause
little change in the phase characteristics of the amplifiers
and are therefore allowable.
Noise Measurement Circuit
Capacitive loads greater than 50 pF must be isolated from
the output. The most straightforward way to do this is to put
00521827
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.
@
Total Gain: 115 dB f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
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RIAA Preamp Voltage Gain, RIAA
Deviation vs Frequency
Flat Amp Voltage Gain vs
Frequency
00521828
00521829
Typical Applications
NAB Preamp Voltage Gain
vs Frequency
NAB Preamp
00521831
00521830
A
V
= 34.5
F = 1 kHz
= 0.38 µV
E
n
A Weighted
Balanced to Single Ended Converter
Adder/Subtracter
00521833
V
= V1 + V2 − V3 − V4
O
00521832
V
= V1–V2
O
9
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Typical Applications (Continued)
Sine Wave Oscillator
00521834
Second Order High Pass Filter
(Butterworth)
Second Order Low Pass Filter
(Butterworth)
00521835
00521836
Illustration is f = 1 kHz
0
Illustration is f = 1 kHz
0
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Typical Applications (Continued)
State Variable Filter
00521837
Illustration is f = 1 kHz, Q = 10, A = 1
0
BP
AC/DC Converter
00521838
2 Channel Panning Circuit (Pan Pot)
Line Driver
00521839
00521840
11
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Typical Applications (Continued)
Tone Control
00521841
Illustration is:
f
f
= 32 Hz, f = 320 Hz
LB
L
=11 kHz, f
= 1.1 kHz
HB
H
00521842
RIAA Preamp
00521803
A
E
= 35 dB
v
= 0.33 µV
n
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, V = 10 mV
IN
@
f = 1 kHz
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12
Typical Applications (Continued)
Balanced Input Mic Amp
00521843
Illustration is:
V0 = 101(V2 − V1)
13
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Typical Applications (Continued)
10 Band Graphic Equalizer
00521844
fo(Hz)
32
C1
C2
R1
R2
0.12µF
0.056µF
0.033µF
0.015µF
8200pF
3900pF
2000pF
1100pF
510pF
4.7µF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
3.3µF
125
250
500
1k
1.5µF
0.82µF
0.39µF
0.22µF
0.1µF
2k
4k
0.056µF
0.022µF
0.012µF
8k
16k
330pF
Note 6: At volume of change = 12 dB
Q = 1.7
Reference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61
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14
Typical Applications (Continued)
LM833 MDC MWC
DUAL AUDIO OPERATIONAL AMPLIFIER
00521854
Die Layout (A - Step)
DIE/WAFER CHARACTERISTICS
Fabrication Attributes
General Die Information
Physical Die Identification
Die Step
LM833A
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
110µm x 110µm
ALUMINUM
VOM NITRIDE
BARE BACK
Floating
A
Physical Attributes
Wafer Diameter
150mm
Back Side Metal
Dise Size (Drawn)
1219µm x 1270µm Back Side Connection
48mils x 50mils
Thickness
Min Pitch
406µm Nominal
288µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (A - Step)
(Referenced to die center, coordinates in µm) NC = No Connection
X/Y COORDINATES
PAD SIZE
SIGNAL NAME
PAD# NUMBER
X
Y
X
Y
OUTPUT A
INPUT A-
INPUT A+
VEE-
1
2
3
4
5
6
7
8
-476
-476
-476
-0
500
-212
-500
-500
-500
-212
500
500
110
110
110
110
110
110
110
110
x
x
x
x
x
x
x
x
110
110
110
110
110
110
110
110
INPUT B+
INPUT B-
OUTPUT B
VCC+
476
476
476
0
15
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Typical Applications (Continued)
IN U.S.A
Tel #:
1 877 Dial Die 1 877 342 5343
1 207 541 6140
Fax:
IN EUROPE
Tel:
49 (0) 8141 351492 / 1495
49 (0) 8141 351470
Fax:
IN ASIA PACIFIC
Tel:
(852) 27371701
81 043 299 2308
IN JAPAN
Tel:
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16
Physical Dimensions inches (millimeters) unless otherwise noted
Molded Small Outline Package (M)
Order Number LM833M or LM833MX
NS Package Number M08A
Molded Dual-In-Line Package (N)
Order Number LM833N
NS Package Number N08E
17
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
8-Lead (0.118” Wide) Molded Mini Small Outline Package
Order Number LM833MM or LM833MMX
NS Package Number MUA08A
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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