LM111WGPQMLV/NOPB [TI]
COMPARATOR, 4000uV OFFSET-MAX, 200ns RESPONSE TIME, CDSO10, CERAMIC, SOIC-10;
| 型号： | LM111WGPQMLV/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | COMPARATOR, 4000uV OFFSET-MAX, 200ns RESPONSE TIME, CDSO10, CERAMIC, SOIC-10 放大器 CD |
| 文件： | 总31页 (文件大小：1073K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2005
LM111QML
Voltage Comparator
General Description
much less prone to spurious oscillations. The LM111 has the
same pin configuration as the LM106 and LM710.
The LM111 is a voltage comparator that has input currents
nearly a thousand times lower than devices such as the
LM106 or LM710. It is also designed to operate over a wider
range of supply voltages: from standard 15V op amp sup-
plies down to the single 5V supply used for IC logic. The
output is compatible with RTL, DTL and TTL as well as MOS
circuits. Further, it can drive lamps or relays, switching volt-
ages up to 50V at currents as high as 50 mA.
Features
n Available with radiation guaranteed
n Operates from single 5V supply
n Input current: 200 nA max. over temperature
n Offset current: 20 nA max. over temperature
n Differential input voltage range: 30V
n Power consumption: 135 mW at 15V
n Power supply voltage, single 5V to 15V
n Offset voltage null capability
Both the inputs and the output of the LM111 can be isolated
from system ground, and the output can drive loads referred
to ground, the positive supply or the negative supply. Offset
balancing and strobe capability are provided and outputs
can be wire OR’ed. Although slower than the LM106 and
LM710 (200 ns response time vs 40 ns) the device is also
n Strobe capability
Ordering Information
NS PART NUMBER
LM111E-SMD
LM111H-SMD
LM111J-8-SMD
LM111WG-SMD
LM111E/883
SMD PART NUMBER
5962-8687701Q2A
5962-8687701QGA
5962-8687701QPA
5962-8687701QZA
NS PACKAGE NUMBER
PACKAGE DESCRIPTION
20LD Leadless Chip Carrier
8LD TO-99 Metal Can
8LD CERDIP
E20A
H08C
J08A
WG10A
E20A
10LD Ceramic SOIC
20LD Leadless Chip Carrier
8LD TO-99 Metal Can
8LD CERDIP
LM111H/883
H08C
J08A
LM111J-8/883
LM111J/883
J14A
14LD CERDIP
LM111W/883
W10A
WG10A
H08C
10LD CERPACK
LM111WG/883
LM111HPQMLV
10LD Ceramic SOIC
8LD TO-99 Metal Can
5962P0052401VGA
30k rd(Si)
LM111WPQMLV
LM111WGPQMLV
LM111HLQMLV
LM111J-8LQMLV
LM111WGLQMLV
LM111WLQMLV
5962P0052401VHA
30k rd(Si)
W10A
WG10A
H08A
10LD CERPACK
10LD Ceramic SOIC
8LD TO-99 Metal Can
8LD CERDIP
5962P0052401VZA
30k rd(Si)
5962L0052401VGA
50k rd(Si)
5962L0052401VPA
50k rd(Si)
J08A
5962L0052401VZA
50k rd(Si)
WG10A
W10A
10LD Ceramic SOIC
10LD CERPACK
5962L0052401VHA
50k rd(Si)
© 2005 National Semiconductor Corporation
DS201285
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Connection Diagrams
Metal Can Package
20128506
Note: Pin 4 connected to case
Top View
See NS Package Number H08C
Dual-In-Line Package
Dual-In-Line Package
20128534
Top View
20128535
See NS Package Number J08A
Top View
See NS Package Number J14A
20128533
See NS Package Number W10A, WG10A
20128573
See NS Package NumberE20A
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2
Schematic Diagram (Note 1)
20128505
Note 1: Pin connections shown on schematic diagram are for H08 package.
3
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Absolute Maximum Ratings (Note 2)
Positive Supply Voltage
Negative Supply Voltage
Total Supply Voltage
+30.0V
-30.0V
36V
Output to Negative Supply Voltage
GND to Negative Supply Voltage
Differential Input Voltage
Sink Current
50V
30V
30V
50mA
15V
Input Voltage
(Note 3)
(Note 4)
Power Dissipation
@
400mW 25˚C
8 LD CERDIP
@
330mW 25˚C
8 LD Metal Can
10 LD CERPACK
@
330mW 25˚C
@
330mW 25˚C
10 LD Ceramic SOIC
20 LD LCC
@
500mW 25˚C
Output Short Circuit Duration
Maximum Strobe Current
Operating Temperature Range
Thermal Resistance
θJA
10 seconds
10mA
-55˚C ≤ TA ≤ 125˚C
@
8 LD CERDIP (Still Air 0.5W)
134˚C/W
76˚C/W
162˚C/W
92˚C/W
231˚C/W
153˚C/W
231˚C/W
153˚C/W
97˚C/W
65˚C/W
90˚C/W
65˚C/W
@
8 LD CERDIP (500LF/Min Air flow 0.5W)
@
8 LD Metal Can (Still Air 0.5W)
@
8 LD Metal Can (500LF/Min Air flow 0.5W)
@
10 Ceramic SOIC (Still Air 0.5W)
@
10 Ceramic SOIC (500LF/Min Air flow 0.5W)
@
10 CERPACK (Still Air 0.5W)
@
10 CERPACK (500LF/Min Air flow 0.5W)
@
14 LD CERDIP (Still Air 0.5W)
@
14 LD CERDIP (500LF/Min Air flow 0.5W)
@
20 LD LCC (Still Air 0.5W)
20 LD LCC (500LF/Min Air flow 0.5W)
θJC
@
8 LD CERDIP
8 LD Metal Can Pkg
10 LD Ceramic SOIC
10 LD CERPACK
21˚C/W
50˚C/W
24˚C/W
24˚C/W
14 LD CERDIP
20˚C/W
20 LD LCC
21˚C/W
Storage Temperature Range
Maximum Junction Temperature
Lead Temperature (Soldering, 60 seconds)
Voltage at Strobe Pin
Package Weight (Typical)
8 LD Metal Can
-65˚C ≤ TA ≤ 150˚C
175˚C
300˚C
V+ = -5V
965mg
1100mg
250mg
225mg
TBD
8 LD CERDIP
10 LD CERPACK
10 LD Ceramic SOIC
14 LD CERDIP
20 LD LCC
TBD
ESD Rating
(Note 5)
300V
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4
Recommended Operating Conditions
Supply Voltage
VCC
=
15VDC
Operating Temperature Range
-55˚C ≤ TA ≤ 125˚C
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Temperature (˚C)
1
2
Static tests at
Static tests at
+25
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
+125
-55
5
6
7
+25
+125
-55
8A
8B
9
+25
+125
-55
10
11
5
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LM111
883 Electrical Characteristics
DC Parameters
The following conditions apply, unless otherwise specified.
DC:
V56 = 0, RS = 0 Ω, VCC
=
15V, VCM = 0, VO = 1.4V WRT −VCC The pin assignments are based on the 8 pin package
configuration. (Note 7)
Sub-
groups
1
Symbol
IIO
Parameter
Conditions
Notes
Min
Max Unit
Input Offset Current
VCM = 13.5V, RS = 50KΩ
-10
-20
10
20
nA
nA
2, 3
VCM = 13.5V, V85 = V86 = 0V,
RS = 50KΩ
(Note 7)
-30
30
nA
1
VCM = -14.5V, RS= 50KΩ
-10
-20
10
20
nA
nA
1
2, 3
VCM = -14.5V, V85 = V86 = 0V,
RS= 50KΩ
(Note 7)
(Note 7)
-30
30
nA
1
RS = 50KΩ
-10
-20
-30
10
20
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
V
1
2, 3
1
V85 = V86 = 0V, RS = 50KΩ
VCM = 13.5V, RS = 50KΩ
30
IIB
Input Bias Current
100
150
100
150
100
150
10
1
2, 3
1
VCM = -14.5V, RS = 50KΩ
RS = 50KΩ
2, 3
1
2, 3
1
IOL
Output Leakage Current
Ground Leakage Current
Saturation Voltage
VCC
VO = 35V WRT -VCC
VCC 18V, I5 + I6 = 5mA,
=
18V, I5 + I6 = 5mA,
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
500
25
2, 3
1
IGL
=
VO = 50V WRT -VCC
VI = -5mV, I7 = 50mA
VI = -6mV, I7 = 8mA
500
1.5
0.4
5.0
15
2
VSat
-ICC
+ICC
IL1
1, 2, 3
1, 2, 3
1, 2
3
V
Negative Supply Current
Positive Supply Current
Input Leakage Current
mA
mA
mA
mA
6.0
15
1, 2
3
VCC
=
18V, V28 = 1V,
(Note 7)
(Note 7)
(Note 7)
(Note 7)
10
30
10
30
nA
nA
nA
nA
1
2
1
2
V38 = 30V, I5 + I6 = 5mA
VO = 50V WRT -VCC
IL2
Input Leakage Current
VCC
=
18V, V38 = 1V,
V28 = 30V, I5 + I6 = 5mA
VO = 50V WRT -VCC
VOSt
Collector Output Voltage
(Strobe)
14
14
V
V
1
1
ISt = 3mA
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6
LM111
883 Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply, unless otherwise specified.
DC:
V56 = 0, RS = 0 Ω, VCC
=
15V, VCM = 0, VO = 1.4V WRT −VCC The pin assignments are based on the 8 pin package
configuration. (Note 7)
Sub-
groups
Symbol
Parameter
Conditions
Notes
Min
Max Unit
mV
VIO
Input Offset Voltage
VCM = 13.5V
-3.0
-4.0
-3.0
-3.0
-4.0
-3.0
-3.0
-4.0
-3.0
-5.0
-6.0
-3.0
-4.0
-5.0
-6.0
-3.0
-4.0
40
3.0
4.0
3.0
3.0
4.0
3.0
3.0
4.0
3.0
5.0
6.0
3.0
4.0
5.0
6.0
3.0
4.0
1
2, 3
1
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
V/mV
V/mV
VCM = 13.5V, V85 = V86= 0V
VCM = -14.5V
(Note 7)
(Note 7)
(Note 7)
1
2, 3
1
VCM = -14.5V, V85 = V86 = 0V
1
2, 3
1
V85 = V86 = 0V
VO = 0.4V, +VCC = 4.5V,
-VCC = 0V, VCM = 3V
1
2, 3
1
VO = 4.5V, +VCC = 4.5V,
-VCC = 0V, VCM = 3V
2, 3
1
VO = 0.4V, +VCC = 4.5V,
-VCC = 0V, VCM = 0.5V
2, 3
1
VO = 4.5V, +VCC = 4.5V,
-VCC = 0V, VCM = 0.5V
2, 3
4
AVS
Large Signal Gain
-12V ≤ VO ≤ 35V, RL = 1KΩ
(Note 6)
(Note 6)
30
5, 6
AC Parameters
The following conditions apply, unless otherwise specified.
AC:
V56 = 0, RS = 0 Ω, VCC
=
15V, VCM = 0, VO = 1.4V WRT −VCC The pin assignments are based on the 8 pin package
configuration. (Note 7)
Sub-
groups
Symbol
tR
Parameter
Response Time
Conditions
Notes
Min
Max Unit
400 nS
7
7
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LM111
SMD Electrical Characteristics
DC Parameters
The following conditions apply, unless otherwise specified.
DC:
VCC
=
15V, VCM = 0
Sub-
groups
1
Symbol
Parameter
Conditions
VI = 0V, RS = 50Ω
Notes
Min
-3.0
-4.0
Max Unit
+3.0 mV
+4.0 mV
2, 3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50Ω
-3.0
-4.0
-3.0
-4.0
-3.0
-4.0
+3.0 mV
+4.0 mV
+3.0 mV
+4.0 mV
+3.0 mV
+4.0 mV
1
2, 3
1
VIO
Input Offset Voltage
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50Ω
2, 3
1
+VCC = +2.5V, -VCC = -2.5V,
VI = 0V,
2, 3
RS = 50Ω
VIO
R
Raised Input Offset Voltage
VI = 0V, RS = 50Ω
-3.0
-4.5
+3.0 mV
+4.5 mV
1
2, 3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50Ω
-3
+3
mV
1
-4.5
+4.5 mV
2, 3
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V, RS = 50Ω
-3.0
-4.5
-10
-20
+3.0 mV
+4.5 mV
1
2, 3
1, 2
3
IIO
Input Offset Current
VI = 0V, RS = 50KΩ
+10
+20
nA
nA
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50KΩ
-10
-20
-10
-20
+10
+20
+10
+20
nA
nA
nA
nA
1, 2
3
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50KΩ
1, 2
3
IIO
R
Raised Input Offset Current
Input Bias Current
VI = 0V, RS = 50KΩ
-25
-50
+25
+50
nA
nA
nA
nA
1, 2
3
IIB
VI = 0V, RS = 50KΩ
-100 0.1
-150 0.1
1, 2
3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50KΩ
-150 0.1
-200 0.1
-150 0.1
-200 0.1
nA
nA
nA
nA
1, 2
3
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50KΩ
1, 2
3
VOSt
Collector Output Voltage
(Strobe)
+VI = Gnd, -VI = 15V,
ISt = -3mA, RS = 50Ω
(Note 8)
14
80
V
1, 2, 3
1, 2, 3
CMRR
Common Mode Rejection Ratio -28V ≤ -VCC ≤ -0.5V, RS = 50Ω,
2V ≤ +VCC ≤ 29.5V, RS = 50Ω,
dB
-14.5V ≤ VCM ≤ 13V, RS = 50Ω
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8
LM111
SMD Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply, unless otherwise specified.
DC:
VCC
=
15V, VCM = 0
Sub-
Symbol
Parameter
Conditions
+VCC = 4.5V, -VCC = Gnd,
IO = 8mA, VI = 0.71V,
VID = -6mV
Notes
Min
Max Unit
groups
VOL
Low Level Output Voltage
0.4
0.4
V
V
1, 2, 3
1, 2, 3
+VCC = 4.5V, -VCC = Gnd,
IO = 8mA, VI = −1.75V,
VID = -6mV
IO = 50mA, VI = 13V,
VID = -5mV
1.5
1.5
V
V
1, 2, 3
1, 2, 3
IO = 50mA, Vl= -14V,
VID = -5mV
ICEX
IL
Output Leakage Current
Input Leakage Current
+VCC = 18V, -VCC = -18V,
VO = 32V
-1.0
-1.0
10
nA
nA
1
2
500
+VCC = 18V, -VCC = -18V,
+VI = +12V, -VI = -17V
+VCC = 18V, -VCC = -18V,
+VI = -17V, -VI = +12V
(Note 11) -5.0
(Note 11) -5.0
500
500
nA
nA
1, 2, 3
1, 2, 3
+ICC
-ICC
Power Supply Current
Power Supply Current
6.0
7.0
mA
mA
mA
mA
1, 2
3
-5.0
-6.0
1, 2
3
∆ VIO / ∆T Temperature Coefficient Input
25˚C ≤ T ≤ 125˚C
-55˚C ≤ T ≤ 25˚C
25˚C ≤ T ≤ 125˚C
-55˚C ≤ T ≤ 25˚C
(Notes 11,
-25
25
25
µV/˚C
µV/˚C
pA/˚C
pA/˚C
2
3
2
3
Offset Voltage
13)
(Notes 11,
-25
13)
∆ IIO / ∆T
Temperature Coefficient Input
Offset Current
(Notes 11,
-100 100
-200 200
13)
(Notes 11,
13)
IOS
Short Circuit Current
VO = 5V, t ≤ 10mS, -VI = 0.1V, (Note 10)
200
150
250
mA
mA
mA
1
2
3
+VI = 0V
(Note 10)
(Note 10)
+VIO adj.
-VIO adj.
AVE
Input Offset Voltage
(Adjustment)
VO = 0V, VI = 0V, RS = 50Ω
VO = 0V, VI = 0V, RS = 50Ω
RL = 600Ω
5.0
mV
mV
1
1
Input Offset Voltage
(Adjustment)
-5.0
Voltage Gain (Emitter)
(Note 6)
(Note 6)
10
V/mV
V/mV
4
8.0
5, 6
AC Parameters
The following conditions apply, unless otherwise specified.
AC:
VCC
=
15V, VCM = 0
Sub-
groups
7, 8B
8A
Symbol
Parameter
Conditions
Notes
Min Max
300
Unit
(Note 13)
(Note 13)
nS
nS
Response Time (Collector
Output)
VOD(Overdrive) = -5mV,
CL = 50pF, VI = -100mV
tRLHC
640
9
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LM111
SMD Electrical Characteristics (Continued)
AC Parameters (Continued)
The following conditions apply, unless otherwise specified.
AC:
VCC
=
15V, VCM = 0
Sub-
groups
7, 8B
8A
Symbol
Parameter
Conditions
VOD(Overdrive) = 5mV,
CL = 50pF, VI = 100mV
Notes
Min Max
300
Unit
nS
tRHLC
Response Time (Collector
Output)
(Note 13)
(Note 13)
500
nS
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10
LM111
RH Electrical Characteristics
DC Parameters (Note 12)
The following conditions apply, unless otherwise specified.
DC:
VCC
=
15V, VCM = 0
Sub-
groups
1
Symbol
Parameter
Conditions
VI = 0V, RS = 50Ω
Notes
Min
-3.0
-4.0
Max Unit
+3.0 mV
+4.0 mV
2, 3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50Ω
-3.0
-4.0
-3.0
-4.0
+3.0 mV
+4.0 mV
+3.0 mV
+4.0 mV
1
2, 3
1
VIO
Input Offset Voltage
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50Ω
2, 3
+VCC = +2.5V, -VCC = -2.5V,
VI = 0V, RS = 50Ω
-3.0
-4.0
-3.0
-4.5
+3.0 mV
+4.0 mV
+3.0 mV
+4.5 mV
1
2, 3
1
VIO
R
Raised Input Offset Voltage
VI = 0V, RS = 50Ω
2, 3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50Ω
-3.0
-4.5
-3.0
-4.5
+3.0 mV
+4.5 mV
+3.0 mV
+4.5 mV
1
2, 3
1
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50Ω
2, 3
IIO
Input Offset Current
VI = 0V, RS = 50KΩ
-10
-20
+10
+20
nA
nA
1, 2
3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50KΩ
-10
-20
-10
-20
+10
+20
+10
+20
nA
nA
nA
nA
1, 2
3
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50KΩ
1, 2
3
IIO
R
Raised Input Offset Current
Input Bias Current
VI = 0V, RS = 50KΩ
-25
-50
+25
+50
nA
nA
nA
nA
1, 2
3
IIB
VI = 0V, RS = 50KΩ
-100 0.1
-150 0.1
1, 2
3
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50KΩ
-150 0.1
-200 0.1
-150 0.1
-200 0.1
nA
nA
nA
nA
1, 2
3
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50KΩ
1, 2
3
VOSt
Collector Output Voltage
(Strobe)
+VI = Gnd, -VI = 15V,
ISt = -3mA, RS = 50Ω
(Note 13) 14
80
V
1, 2, 3
1, 2, 3
CMRR
Common Mode Rejection Ratio -28V ≤ -VCC ≤ -0.5V, RS = 50Ω,
2V ≤ +VCC ≤ 29.5V, RS = 50Ω,
dB
-14.5V ≤ VCM ≤ 13V, RS = 50Ω
11
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LM111
RH Electrical Characteristics (Continued)
DC Parameters (Note 12) (Continued)
The following conditions apply, unless otherwise specified.
DC:
VCC
=
15V, VCM = 0
Sub-
Symbol
Parameter
Conditions
+VCC = 4.5V, -VCC = Gnd,
IO = 8mA, VI = 0.5V,
VID = -6mV
Notes
Min
Max Unit
groups
VOL
Low Level Output Voltage
0.4
0.4
V
V
1, 2, 3
1, 2, 3
+VCC = 4.5V, -VCC = Gnd,
IO = 8mA, VI = 3V,
VID = -6mV
IO = 50mA, VI = 13V,
VID = -5mV
1.5
1.5
V
V
1, 2, 3
1, 2, 3
IO = 50mA, VI = -14V,
VID = -5mV
ICEX
IL
Output Leakage Current
Input Leakage Current
+VCC = 18V, -VCC = -18V,
VO = 32V
-1.0
-1.0
10
nA
nA
1
2
500
+VCC = 18V, -VCC = -18V,
+VI = +12V, -VI = -17V
+VCC = 18V, -VCC = -18V,
+VI = -17V, -VI = +12V
(Note 11) -5.0
(Note 11) -5.0
500
500
nA
nA
1, 2, 3
1, 2, 3
+ICC
Power Supply Current
Power Supply Current
6.0
7.0
mA
1, 2
3
mA
-ICC
-5.0
-6.0
-25
-25
mA
1, 2
3
mA
∆VIO / ∆T
∆ IIO / ∆T
IOS
Temperature Coefficient Input
Offset Voltage
25˚C ≤ T ≤ 125˚C
25
25
µV/˚C
µV/˚C
pA/˚C
pA/˚C
mA
2
-55˚C ≤ T ≤ 25˚C
3
Temperature Coefficient Input
Offset Current
25˚C ≤ T ≤ 125˚C
-100 100
-200 200
200
2
-55˚C ≤ T ≤ 25˚C
3
Short Circuit Current
VO = 5V, t ≤ 10mS, -VI = 0.1V, (Note 10)
1
+VI = 0V
(Note 10)
(Note 10)
150
mA
2
250
mA
3
+VIO adj.
-VIO adj.
AVE
Input Offset Voltage
(Adjustment)
VO = 0V, VI = 0V, RS = 50Ω
VO = 0V, VI = 0V, RS = 50Ω
RL = 600Ω
5.0
mV
mV
1
1
Input Offset Voltage
(Adjustment)
-5.0
Voltage Gain (Emitter)
(Note 6)
(Note 6)
10
V/mV
V/mV
4
8.0
5, 6
AC Parameters
(Note 12)
The following conditions apply, unless otherwise specified.
AC:
VCC
=
15V, VCM = 0
Sub-
groups
7, 8B
8A
Symbol
Parameter
Conditions
Notes
Min Max
300
Unit
nS
nS
nS
nS
Response Time (Collector
Output)
VOD(Overdrive) = -5mV,
CL = 50pF, VI = -100mV
tRLHC
(Note 13)
640
tRHLC
Response Time (Collector
Output)
VOD(Overdrive) = 5mV,
CL = 50pF, VI = 100mV
300
7, 8B
8A
(Note 13)
500
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12
LM111
RH Electrical Characteristics (Continued)
DC Drift Parameters
(Note 12)
The following conditions apply, unless otherwise specified.
DC: VCC 15V, VCM = 0
Delta calculations performed on QMLV devices at group B , subgroup 5.
=
Sub-
groups
1
Symbol
Parameter
Input Offset Voltage
Input Bias Current
Conditions
VI = 0V, RS = 50Ω
Notes
Min Max
Unit
-0.5
0.5
mV
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50Ω
-0.5
0.5
mV
1
VIO
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50Ω
-0.5
0.5
mV
nA
nA
1
1
1
IIB
VI = 0V, RS = 50KΩ
+VCC = 29.5V, -VCC = -0.5V,
VI = 0V, VCM = -14.5V,
RS = 50KΩ
-12.5 12.5
-12.5 12.5
+VCC = 2V, -VCC = -28V,
VI = 0V, VCM = +13V,
RS = 50KΩ
-12.5 12.5
nA
nA
1
1
ICEX
Output Leakage Current
+VCC = 18V, -VCC = -18V,
VO = 32V
-5.0
5.0
Electrical Characteristics
Post Radiation Limits
The following conditions apply, unless otherwise specified
Sub-
groups
1
Symbol
IIO
Parameter
Conditions
Notes
Min Max
Unit
Input Offset Current
+VCC = 29.5V, −VCC = −0.5V,
VI = 0V, VCM = −14.5V,
RS = 50KΩ
−50
+50
nA
+VCC = 2V, −VCC = −28V,
−50
+50
nA
1
VI = 0V, VCM = +13V, RS
50KΩ
=
IIB
Input Bias Current
VI = 0V, RS = 50KΩ
−150 0.1
−175 0.1
nA
nA
1
1
+VCC = 29.5V, −VCC = −0.5V,
VI = 0V, VCM = −14.5V,
RS = 50KΩ
ICEX
Output Leakage Current
+VCC = 18V, −VCC = −18V,
VO = 32V
−25
+25
nA
1
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3: This rating applies for 15V supplies. The positive input voltage limits is 30 V above the negative supply. The negative input voltage limits is equal to the
negative supply voltage or 30V below the positive supply, whichever is less.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
(maximum junction temperature), θ (package junction
JA
Jmax
to ambient thermal resistance), and T (ambient temperature). The maximum allowable power dissipation at any temperature is P
= (T
- T )/θ or the
A
Dmax
Jmax A JA
number given in the Absolute Maximum Ratings, whichever is lower.
Note 5: Human body model, 1.5 kΩ in series with 100 pF.
Note 6: Datalog reading in K=V/mV.
Note 7: Pin names based on an 8 pin package configuration. When using higher pin count packages then:
Pin 2 & 3 are Inputs, Pin 5 is Balance, Pin 6 is
V is the Voltage between the Balance and Balance / Strobe pins
56
+
Balance / Strobe, Pin 7 is Output, and Pin 8 is V . For example:
Note 8: I = −2mA at −55˚C
ST
Note 9: Calculated parameter.
Note 10: Actual min. limit used is 5mA due to test setup.
13
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Note 11: V is voltage difference between inputs.
ID
Note 12: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
Note 13: Group A sample ONLY
LM111 Typical Performance Characteristics
Input Bias Current
Input Bias Current
20128543
20128544
Input Bias Current
Input Bias Current
20128546
20128545
Input Bias Current
Input Bias Current
20128547
20128548
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14
LM111 Typical Performance Characteristics (Continued)
Input Bias Current
Input Overdrives
Input Bias Current
Input Overdrives
20128550
20128549
Response Time for Various
Input Overdrives
Input Bias Current
20128551
20128552
Response Time for Various
Input Overdrives
Output Limiting Characteristics
20128554
20128553
15
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LM111 Typical Performance Characteristics (Continued)
Supply Current
Supply Current
20128555
20128556
Leakage Currents
20128557
2. Certain sources will produce a cleaner comparator out-
put waveform if a 100 pF to 1000 pF capacitor C2 is
connected directly across the input pins.
Application Hints
CIRCUIT TECHNIQUES FOR AVOIDING
3. When the signal source is applied through a resistive
network, RS, it is usually advantageous to choose an RS'
of substantially the same value, both for DC and for
dynamic (AC) considerations. Carbon, tin-oxide, and
metal-film resistors have all been used successfully in
comparator input circuitry. Inductive wire wound resis-
tors are not suitable.
OSCILLATIONS IN COMPARATOR APPLICATIONS
When a high-speed comparator such as the LM111 is used
with fast input signals and low source impedances, the out-
put response will normally be fast and stable, assuming that
the power supplies have been bypassed (with 0.1 µF disc
capacitors), and that the output signal is routed well away
from the inputs (pins 2 and 3) and also away from pins 5 and
6.
4. When comparator circuits use input resistors (e.g. sum-
ming resistors), their value and placement are particu-
larly important. In all cases the body of the resistor
should be close to the device or socket. In other words
there should be very little lead length or printed-circuit
foil run between comparator and resistor to radiate or
pick up signals. The same applies to capacitors, pots,
etc. For example, if RS=10 kΩ, as little as 5 inches of
lead between the resistors and the input pins can result
in oscillations that are very hard to damp. Twisting these
input leads tightly is the only (second best) alternative to
placing resistors close to the comparator.
However, when the input signal is a voltage ramp or a slow
sine wave, or if the signal source impedance is high (1 kΩ to
100 kΩ), the comparator may burst into oscillation near the
crossing-point. This is due to the high gain and wide band-
width of comparators like the LM111. To avoid oscillation or
instability in such a usage, several precautions are recom-
mended, as shown in Figure 1 below.
1. The trim pins (pins 5 and 6) act as unwanted auxiliary
inputs. If these pins are not connected to a trim-pot, they
should be shorted together. If they are connected to a
trim-pot, a 0.01 µF capacitor C1 between pins 5 and 6
will minimize the susceptibility to AC coupling. A smaller
capacitor is used if pin 5 is used for positive feedback as
in Figure 1.
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16
circuit of Figure 2, the feedback from the output to the
positive input will cause about 3 mV of hysteresis. How-
ever, if RS is larger than 100Ω, such as 50 kΩ, it would
not be reasonable to simply increase the value of the
positive feedback resistor above 510 kΩ. The circuit of
Figure 3 could be used, but it is rather awkward. See the
notes in paragraph 7 below.
Application Hints (Continued)
5. Since feedback to almost any pin of a comparator can
result in oscillation, the printed-circuit layout should be
engineered thoughtfully. Preferably there should be a
ground plane under the LM111 circuitry, for example,
one side of a double-layer circuit card. Ground foil (or,
positive supply or negative supply foil) should extend
between the output and the inputs, to act as a guard.
The foil connections for the inputs should be as small
and compact as possible, and should be essentially
surrounded by ground foil on all sides, to guard against
capacitive coupling from any high-level signals (such as
the output). If pins 5 and 6 are not used, they should be
shorted together. If they are connected to a trim-pot, the
trim-pot should be located, at most, a few inches away
from the LM111, and the 0.01 µF capacitor should be
installed. If this capacitor cannot be used, a shielding
printed-circuit foil may be advisable between pins 6 and
7. The power supply bypass capacitors should be lo-
cated within a couple inches of the LM111. (Some other
comparators require the power-supply bypass to be lo-
cated immediately adjacent to the comparator.)
7. When both inputs of the LM111 are connected to active
signals, or if a high-impedance signal is driving the
positive input of the LM111 so that positive feedback
would be disruptive, the circuit of Figure 1 is ideal. The
positive feedback is to pin 5 (one of the offset adjust-
ment pins). It is sufficient to cause 1 to 2 mV hysteresis
and sharp transitions with input triangle waves from a
few Hz to hundreds of kHz. The positive-feedback signal
across the 82Ω resistor swings 240 mV below the posi-
tive supply. This signal is centered around the nominal
voltage at pin 5, so this feedback does not add to the
VOS of the comparator. As much as 8 mV of VOS can be
trimmed out, using the 5 kΩ pot and 3 kΩ resistor as
shown.
8. These application notes apply specifically to the LM111
and LF111 family of comparators, and are applicable to
all high-speed comparators in general, (with the excep-
tion that not all comparators have trim pins).
6. It is a standard procedure to use hysteresis (positive
feedback) around a comparator, to prevent oscillation,
and to avoid excessive noise on the output because the
comparator is a good amplifier for its own noise. In the
20128529
Pin connections shown are for LM111H in the H08 hermetic package
FIGURE 1. Improved Positive Feedback
17
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Application Hints (Continued)
20128530
Pin connections shown are for LM111H in the H08 hermetic package
FIGURE 2. Conventional Positive Feedback
20128531
FIGURE 3. Positive Feedback with High Source Resistance
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18
Typical Applications (Note 16)
Offset Balancing
Strobing
20128536
20128537
Note: Do Not Ground Strobe Pin. Output is turned off when current is pulled
from Strobe Pin.
Increasing Input Stage Current (Note 14)
Detector for Magnetic Transducer
20128538
Note 14: Increases typical common mode slew from 7.0V/µs to 18V/µs.
20128539
Digital Transmission Isolator
Relay Driver with Strobe
20128540
20128541
*Absorbs inductive kickback of relay and protects IC from severe voltage
++
transients on V line.
Note: Do Not Ground Strobe Pin.
19
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Typical Applications (Note 16) (Continued)
Strobing off Both Input and Output Stages (Note 15)
20128542
Note: Do Not Ground Strobe Pin.
Note 15: Typical input current is 50 pA with inputs strobed off.
Note 16: Pin connections shown on schematic diagram and typical applications are for H08 metal can package.
Positive Peak Detector
Zero Crossing Detector Driving MOS Logic
20128524
20128523
*Solid tantalum
Typical Applications for H08
Package (Pin numbers refer to H08 package)
Zero Crossing Detector Driving MOS Switch
100 kHz Free Running Multivibrator
20128513
20128514
*TTL or DTL fanout of two
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20
Typical Applications for H08 Package (Pin numbers refer to H08 package) (Continued)
10 Hz to 10 kHz Voltage Controlled Oscillator
20128515
*Adjust for symmetrical square wave time when V = 5 mV
IN
†
Minimum capacitance 20 pF Maximum frequency 50 kHz
Driving Ground-Referred Load
Using Clamp Diodes to Improve Response
20128517
20128516
*Input polarity is reversed when using pin 1 as output.
TTL Interface with High Level Logic
20128518
*Values shown are for a 0 to 30V logic swing and a 15V threshold.
†
May be added to control speed and reduce susceptibility to noise spikes.
21
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Typical Applications for H08 Package (Pin numbers refer to H08 package) (Continued)
Crystal Oscillator
Comparator and Solenoid Driver
20128520
20128519
Precision Squarer
20128521
*Solid tantalum
†
Adjust to set clamp level
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22
Typical Applications for H08 Package (Pin numbers refer to H08 package) (Continued)
Low Voltage Adjustable Reference Supply
20128522
*Solid tantalum
Positive Peak Detector
Zero Crossing Detector Driving MOS Logic
20128524
20128523
*Solid tantalum
Negative Peak Detector
20128525
*Solid tantalum
23
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Typical Applications for H08 Package (Pin numbers refer to H08 package) (Continued)
Precision Photodiode Comparator
20128526
*R2 sets the comparison level. At comparison, the photodiode has less than 5 mV across it, decreasing leakages by an order of magnitude.
Switching Power Amplifier
20128527
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24
Typical Applications for H08 Package (Pin numbers refer to H08 package) (Continued)
Switching Power Amplifier
20128528
25
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Revision History
Released
Revision
Section
Originator
Changes
10/11/05
A
New Release, Corporate format
L. Lytle
3 MDS data sheets converted into one Corp.
data sheet format. MNLM111-X Rev 0A0,
MDLM111-X Rev. 0B0, and MRLM111-X-RH
Rev 0E1. The drift table was eliminated from
the 883 section since it did not apply; Note
#3 was removed from RH & QML
datasheets with SG verification that it no
longer applied. Added NSID’s for 50k Rad
and Post Radiation Table. MDS data sheets
will be archived.
12/14/05
B
Ordering Information Table
R. Malone
Removed NSID reference LM111J-8PQMLV,
5962P0052401VPA
30k rd(Si). Reason: NSID on LTB, Inventory
exhausted. Added following NSID’s:
LM111HPQMLV, LM111WPQMLV and
LM111WGPQMLV. Reason: Still have
Inventory. LM111QML, Revision A will be
archived.
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26
Physical Dimensions inches (millimeters) unless otherwise noted
Metal Can Package (H)
NS Package Number H08C
Cavity Dual-In-Line Package (J)
NS Package Number J08A
27
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (J)
NS Package Number J14A
Leadless Chip Carrier (E)
NS Package Number E20A
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28
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
NS Package Number W10A
NS Package Number WG10A
29
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Notes
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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