CSD17304Q3 [TI]
30V N-Channel NexFET™ Power MOSFETs; 30V N通道NexFET ™功率MOSFET
| 型号： | CSD17304Q3 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 30V N-Channel NexFET™ Power MOSFETs |
| 文件： | 总10页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSD17304Q3
www.ti.com
SLPS258 –FEBRUARY 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17304Q3
PRODUCT SUMMARY
Drain to Source Voltage
1
FEATURES
VDS
Qg
30
5.1
1.1
V
2
•
•
•
•
•
•
•
•
Optimized for 5V Gate Drive
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
nC
nC
mΩ
mΩ
mΩ
V
Ultralow Qg and Qgd
Qgd
Low Thermal Resistance
Avalanche Rated
VGS = 3V
9.8
6.9
5.9
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 8V
Pb Free Terminal Plating
RoHS Compliant
VGS(th)
Threshold Voltage
1.3
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
ORDERING INFORMATION
Device
CSD17304Q3
Package
Media
Qty
Ship
APPLICATIONS
SON 3.3-mm × 3.3-mm 13-Inch
Tape and
Reel
2500
Plastic Package Reel
•
Notebook Point of Load
•
Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
V
DESCRIPTION
VDS
VGS
Drain to Source Voltage
30
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Gate to Source Voltage
+10 / –8
56
V
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
Pulsed Drain Current, TA = 25°C(2)
Power Dissipation(1)
A
ID
15
A
Top View
IDM
PD
TJ,
88
A
2.7
W
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
Operating Junction and Storage
–55 to 150
88
°C
TSTG Temperature Range
Avalanche Energy, Single Pulse
ID = 42, L = 0.1mH, RG = 25Ω
EAS
mJ
(1) Typical RqJA = 46°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
D
D
(2) Pulse duration ≤300ms, duty cycle ≤2%
P0095-01
Text 4 Spacing
RDS(on) vs VGS
Text 4 Spacing
GATE CHARGE
20
18
16
14
12
10
8
8
ID = 17A
ID = 17A
VDS = 15V
7
6
5
4
3
2
1
0
TC = 125°C
6
4
TC = 25°C
2
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage - V
Qg - Gate Charge - nC
G006
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD17304Q3
SLPS258 –FEBRUARY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
IDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
30
V
mA
nA
V
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
VGS = 0V, VDS = 24V
VDS = 0V, VGS = +10 / –8
VDS = VGS, ID = 250mA
VGS = 3V, ID = 17A
1
100
1.8
IGSS
VGS(th)
0.9
1.3
9.8
6.9
5.9
48
12.6
8.8
mΩ
mΩ
mΩ
S
RDS(on)
Drain to Source On Resistance
Transconductance
VGS = 4.5V, ID = 17A
VGS = 8V, ID = 17A
7.5
gfs
VDS = 15V, ID = 17A
Dynamic Characteristics
CISS
COSS
CRSS
Rg
Input Capacitance
735
390
29
955
505
38
pF
pF
pF
Ω
VGS = 0V, VDS = 15V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
1.1
5.1
1.1
1.8
0.9
9.9
5.1
9.1
10.4
3.1
2.2
6.6
Qg
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
VDS = 15V, ID = 17A
VDS = 13V, VGS = 0V
Turn On Delay Time
Rise Time
VDS = 15V, VGS = 4.5V,
ID = 17A , RG = 2Ω
td(off)
tf
Turn Off Delay Time
Fall Time
Diode Characteristics
VSD
Qrr
trr
Diode Forward Voltage
IDS = 17A, VGS = 0V
0.85
14.5
17.3
1
V
Reverse Recovery Charge
Reverse Recovery Time
nC
ns
VDD = 13V, IF = 17A,
di/dt = 300A/ms
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN
TYP
MAX
UNIT
°C/W
°C/W
RqJC
RqJA
3.9
57
(1)
R
qJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Product Folder Link(s): CSD17304Q3
CSD17304Q3
www.ti.com
SLPS258 –FEBRUARY 2010
GATE
Source
GATE
Source
Max RqJA = 57°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RqJA = 158°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
10
1
0.5
0.3
Duty Cycle = t1/t2
0.1
0.1
0.05
P
0.02
0.01
t1
0.01
t2
Single Pulse
Typical RqJA = 126°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
0.001
0.001
0.01
0.1
1
10
100
1k
tp - Pulse Duration - s
G012
Figure 1. Transient Thermal Impedance
Copyright © 2010, Texas Instruments Incorporated
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SLPS258 –FEBRUARY 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
50
45
40
35
30
25
20
15
10
5
50
45
VDS = 5V
VGS = 2.5V
40
35
30
25
20
15
10
5
VGS = 8V
TC = 125°C
VGS = 4.5V
TC = 25°C
TC = -55°C
VGS = 3.5V
VGS = 3V
0
0
0
0.5
1
1.5
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Drain-to-Source Voltage - V
VGS - Gate-to-Source Voltage - V
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
8
7
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
ID = 17A
VDS = 15V
f = 1MHz
VGS = 0V
Coss = Cds + Cgd
Ciss = Cgd + Cgs
0.8
0.6
0.4
0.2
0
Crss = Cgd
0
2
4
6
8
10
5
10
15
20
25
30
Qg - Gate Charge - nC
VDS - Drain-to-Source Voltage - V
G003
G004
Figure 4. Gate Charge
Figure 5. Capacitance
20
18
16
14
12
10
8
1.6
1.4
1.2
1
ID = 17A
ID = 250µA
TC = 125°C
0.8
0.6
0.4
0.2
0
6
4
TC = 25°C
2
0
-75
-25
25
75
125
175
1
2
3
4
5
6
7
8
9
10
TC - Case Temperature - °C
VGS - Gate-to-Source Voltage - V
G005
G006
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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Product Folder Link(s): CSD17304Q3
CSD17304Q3
www.ti.com
SLPS258 –FEBRUARY 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
1.6
100
10
ID = 17A
VGS = 8V
1.4
1.2
1
1
TC = 125°C
0.1
0.8
0.6
0.4
0.2
TC = 25°C
0.01
0.001
0.0001
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
1.2
TC - Case Temperature - °C
VSD - Source-to-Drain Voltage - V
G007
G008
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
1k
1k
100
10
100
1ms
10
10ms
TC = 25°C
1
10101m10s
Area Limited
by RDS(on)
1s
DC
TC = 125°C
0.1
Single Pulse
Typical RθJA = 126°C/W (min Cu)
0.01
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
VDS - Drain-to-Source Voltage - V
t(AV) - Time in Avalanche - ms
G009
G010
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
80
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150 175
TC - Case Temperature - °C
G011
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
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SLPS258 –FEBRUARY 2010
www.ti.com
MECHANICAL DATA
Q3 Package Dimensions
D2
D
H
L
q
L1
A1
Top View
Side View
Bottom View
D
Front View
M0142-01
MILLIMETERS
NOM
1.000
0.000
0.340
0.200
3.300
–
INCHES
NOM
0.039
0.000
0.013
0.008
0.130
–
DIM
MIN
0.950
0.000
0.280
0.150
3.200
–
MAX
1.100
0.050
0.400
0.250
3.400
–
MIN
MAX
0.043
0.002
0.016
0.010
0.134
–
A
A1
b
0.037
0.000
0.011
0.006
0.126
–
c
D
D1
D2
E
1.650
3.200
–
1.750
3.300
–
1.800
3.400
–
0.065
0.126
–
0.069
0.130
–
0.071
0.134
–
E1
E2
e
2.350
2.450
0.650 TYP
0.450
0.450
–
2.550
0.093
0.096
0.026
0.018
0.018
–
0.100
H
0.35
0.35
–
0.550
0.550
–
0.014
0.014
–
0.022
0.022
–
L
L1
q
–
–
–
–
–
–
6
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17304Q3
CSD17304Q3
www.ti.com
SLPS258 –FEBRUARY 2010
Recommended PCB Pattern
3.50
0.56
0.41
2.31
0.63
M0143-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
Q3 Tape and Reel Information
4.00 0.ꢀ0 ꢁ(SS ꢂNoS ꢀ1
8.00 0.ꢀ0
2.00 0.0ꢃ
Ø ꢀ.ꢃ0
+0.ꢀ0
–0.00
3.60
M0ꢀ44-0ꢀ
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
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CSD17304Q3
SLPS258 –FEBRUARY 2010
www.ti.com
Package Marking Information
Location
1st Line
8
5
5
8
CSD
= Fixed Characters
NNNNN = Product Code
2nd Line (Date Code)
CSDNNNNN
YYWWC
LLLLL
YY
WW
C
= Last 2 digits of the Year
= 2-digit Work Week
= Country of Origin
> Philippines = P
> Taiwan = T
> China = C
1
4
4
1
3rd Line
Pin 1
Identifier
LLLLL
= Last 5 digits of the Wafer Lot #
M0145-01
8
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PACKAGE OPTION ADDENDUM
www.ti.com
27-May-2010
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
CSD17304Q3
ACTIVE
SON
DQG
8
2500
Pb-Free (RoHS
Exempt)
Call TI
Level-1-260C-UNLIM
Request Free Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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Addendum-Page 1
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相关型号：
CSD17304Q3_10
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CSD17305Q5A_10
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