BQ34110PWR [TI]
集成了极少放电型模块的多化合物高电池节数电池电量监测计 | PW | 14 | -40 to 85;
| 型号： | BQ34110PWR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 集成了极少放电型模块的多化合物高电池节数电池电量监测计 | PW | 14 | -40 to 85 电池 PC 光电二极管 |
| 文件： | 总28页 (文件大小：1440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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bq34110
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
bq34110 适用于极少放电型应用的多化合物 CEDV 电池电量 监测计
1 特性
3 说明
1
•
精准的放电结束 (EOS) 确定功能，适用于极少放电
型应用中的 电池
bq34110 CEDV 电池电量监测计可为单节和多节电池
提供 CEDV 电量监测和放电结束 (EOS) 确定功能。该
器件配有增强型 特性， 从而 为 各类备用系统中常用
的始终保持满电量且极少放电的电池提供支持。
Bq34110 电量监测计支持多种电池化学成分，包括锂
离子、磷酸铁锂、铅酸 (PbA)、镍氢 (NiMH) 和镍铬
(NiCd)。
•
补偿放电结束电压 (CEDV) 电池电量监测计，适用
于单节和多节电池，可提供
–
–
–
–
充电状态 (SOC)
续航时间 (TTE)
健康状况 (SOH)
基于瓦时的充电终止
该电量监测计使用补偿放电结束电压 (CEDV) 技术获
取电压、电流和温度数据，并借此提供充电状态
(SOC) 和健康状况 (SOH) 数据。这款电量监测计还整
合了放电结束 (EOS) 确定功能，可在电池电量不足和
即将完全放电时发出警报。
•
•
最高支持 65V 电压、32Ah 电容和 32 A 电流 - 可
使用调节特性扩展这些参数级别
支持锂离子、磷酸铁锂、铅酸 (PbA)、镍氢和镍铬
等化学成分
•
•
•
•
•
•
•
双路可配置主机中断或 GPO
寿命数据记录选项
监测计中的数据可由主机通过 400kHz I2C 总线读取。
另外，还有两个 ALERT 输出可供使用，例如向主机发
出中断或者实现其他功能，具体根据配置选项来决定。
精确的库伦计数器、电压和温度测量
电源使能控制
通过 I2C™与主机通信
器件信息(1)
累加充电库伦计数和可配置中断
安全散列算法 (SHA-1) 认证
器件型号
bq34110
封装
封装尺寸（标称值）
TSSOP (14)
5.00mm x 4.40mm
2 应用
(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。
•
•
•
•
•
•
•
•
•
•
•
•
不间断电源 (UPS) 备用系统
简化电路原理图
远程信息处理备用系统
应急电池供电模块
能量存储系统
资产跟踪
PACK+
Learning
Divider Network
Load
楼宇安全系统
视频监控
BAT
VEN
电子智能锁
SDA
SCL
LEN
远程和应急照明
服务器供电系统
机器人
REG25
ALERT1
ALERT2
10k NTC
TS
玩具
SRP
R
SENSE
CHIP ENABLE
CE
SRN
VSS
PACK–
Copyright ©2016,Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSCI1
bq34110
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
www.ti.com.cn
目录
6.14 Electrical Characteristics: Data Flash Memory ....... 7
6.15 Timing Requirements: I2C-Compatible Interface
Timing Characteristics................................................ 7
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings ............................................................ 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics: Supply Current................. 5
6.16 Typical Characteristics ........................................... 8
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 12
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Applications ............................................... 13
Power Supply Recommendations...................... 16
7
8
9
6.6 Electrical Characteristics: Digital Input and Output DC
Characteristics ........................................................... 5
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 18
11 器件和文档支持 ..................................................... 20
11.1 文档支持................................................................ 20
11.2 接收文档更新通知 ................................................. 20
11.3 社区资源................................................................ 20
11.4 商标....................................................................... 20
11.5 静电放电警告......................................................... 20
11.6 Glossary................................................................ 20
12 机械、封装和可订购信息....................................... 20
6.7 Electrical Characteristics: Power-On Reset.............. 5
6.8 Electrical Characteristics: LDO Regulator................. 5
6.9 Electrical Characteristics: Internal Temperature
Sensor........................................................................ 6
6.10 Electrical Characteristics: Low-Frequency Clock
Oscillator .................................................................... 6
6.11 Electrical Characteristics: High-Frequency Clock
Oscillator .................................................................... 6
6.12 Electrical Characteristics: Integrating ADC
(Coulomb Counter) .................................................... 6
6.13 Electrical Characteristics: ADC (Temperature and
Voltage Measurements)............................................. 7
4 修订历史记录
日期
修订版本
注释
2016 年 11 月
B
产品预览至量产数据
2
Copyright © 2016, Texas Instruments Incorporated
bq34110
www.ti.com.cn
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
5 Pin Configuration and Functions
14-Pin TSSOP (PW)
Top View
V !"#$%&
*, -.1
, !
1
+
/
'
2
4
6
1'
1/
1+
11
13
5
()*
(0,
*, -.+
.(
ꢀ*.
0
(-!
(-$
V((
- #%!
- #+2
7
!89 98 :;<=>
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
NUMBER
Active High Voltage Translation Enable. This signal is used optionally to switch the input voltage
divider on/off to reduce the power consumption (typ 45 μA) of the divider network. It can also be
used as a general purpose output.
VEN/GPIO
1
O(1)
ALERT1
LEN
2
3
4
5
6
7
8
O
O
P
I
Open drain output for use as system alert or charger control. Pull-up voltage limited
Push-pull external voltage divider control output
BAT
Voltage measurement input
CE
Chip enable. Internal LDO is powered down when driven low.
REGIN
REG25
VSS
P
P
P
Internal integrated LDO input. Decouple with 0.1-µF ceramic capacitor to VSS.
2.5-V output voltage of the internal integrated LDO. Decouple with 1-µF ceramic capacitor to VSS
.
Device ground
Analog input pin connected to the internal coulomb-counter peripheral for integrating a small
voltage between SRP and SRN, where SRP is nearest the BAT– connection.
SRP
SRN
9
I
I
Analog input pin connected to the internal coulomb-counter peripheral for integrating a small
voltage between SRP and SRN, where SRN is nearest the PACK– connection.
10
TS
11
12
I
Pack thermistor voltage sense (use 103AT-type thermistor)
ALERT2
O
Open drain output for use as system alert or charger control
Open drain slave I2C serial communication clock input. Use with an external 10-kΩ pull-up resistor
(typical).
Open drain slave I2C serial communication data line. Use with an external 10-kΩ pull-up resistor
(typical).
SCL
SDA
13
14
I
I/O
(1) AI = Analog Input, O = Output, I = Input, P = Power, I/O = Input/Output
Copyright © 2016, Texas Instruments Incorporated
3
bq34110
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–40
–40
–40
–65
–40
MAX
UNIT
V
VREGIN Regulator input range
5.5
VREGIN + 0.3
2.75
VCE
CE input pin
V
VREG25 Supply voltage range
V
VIOD
VBAT
VI
Open-drain I/O pins (SDA, SCL, ALERT2)
5.5
V
BAT input pin
5.5
V
Input voltage range to all other pins (SRP, SRN, TS, ALERT1, VEN/GPIO, LEN)
Operating free-air temperature range
Operating junction temperature range
Functional temperature range
VREG25 + 0.3
85
V
TA
°C
°C
°C
°C
°C
TJ
100
TF
100
Storage temperature range
150
TSTG
Lead temperature (soldering, 10 s)
100
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
±1500
±2000
±500
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, BAT pin(1)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all other pins(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
Electrostatic
discharge
V(ESD)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA= –40°C to 85°C, VREGIN = VBAT = 3.6 V (unless otherwise noted)
MIN
2.7
NOM
MAX UNIT
No operating restrictions
No FLASH writes
4.5
2.7
V
V
VREGIN
Supply Voltage
2.45
External input capacitor for
internal LDO between REGIN
and VSS
Nominal capacitor values specified.
Recommend a 10% ceramic X5R type
capacitor located close to the device.
CREGIN
0.1
µF
External output capacitor for
internal LDO between VCC
CREG25
tPUCD
0.47
1
µF
Power-up communication
250
ms
6.4 Thermal Information
bq34110
THERMAL METRIC(1)
TSSOP (PW)
14 PINS
103.8
31.9
UNIT
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
46.6
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
2.0
ψJB
45.9
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
Copyright © 2016, Texas Instruments Incorporated
bq34110
www.ti.com.cn
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
6.5 Electrical Characteristics: Supply Current
TA= –40°C to 85°C, VREGIN = VBAT = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Device in NORMAL mode, ILOAD > Sleep
Current
ICC_NORMAL
Normal operating current
133
µA
Sleep+ operation mode
current
Device in SNOOZE mode, ILOAD < Sleep
Current
(1)
ISNOOZE
53
22
µA
µA
µA
Low-power SLEEP mode
current
(1)
ISLEEP
Device in SLEEP mode, ILOAD < Sleep Current
SHUTDOWN mode
current
Fuel gauge in SHUTDOWN mode, CE pin <
VIL(CE) max
ISHUTDOWN
0.01
(1) Specified by design. Not production tested.
6.6 Electrical Characteristics: Digital Input and Output DC Characteristics
TA= –40°C to 85°C, VREGIN = VBAT = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
Output voltage, low (SCL,
SDA, VEN, LEN, ALERT1, IOL = 3 mA
ALERT2 pins)
VOL
0.4
V
V
V
VOH(PP)
VOH(OD)
Output voltage, high
IOH = –1 mA
VREG25 – 0.5
Output voltage, high (SDA,
SCL, ALERT1, ALERT2
pins)
External pull-up resistor connected to VREG25
VREG25 – 0.5
Input voltage, high
(ALERT1 pin)
VIH(ALERT1)
1.2
VREG25 + 0.3
V
VIL
Input voltage, low
–0.3
0.6
0.8
V
V
VIL(CE)
Input voltage, low (CE pin) VREGIN = 2.7 to 4.5 V
Input voltage, high (CE
VREGIN = 2.7 to 4.5 V
pin)
VIH(CE)
VIH(OD)
ILKG
2.65
1.2
V
V
Input voltage, high (SDA,
SCL, ALERT2 pins)
5.5
0.3
Input leakage current (I/O
pins)
µA
6.7 Electrical Characteristics: Power-On Reset
TA = –40°C to 85°C; typical values at TA = 25°C and VREGIN = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Positive-going battery
voltage input at REGIN
VIT+
2.20
115
VHYS
Power-on reset hysteresis
mV
6.8 Electrical Characteristics: LDO Regulator
TA = 25°C, CREG25 = 1.0 μF, VREGIN = 3.6 V (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
2.7 V ≤ VREGIN ≤ 4.5 V, IOUT ≤ 16 mA
TA = –40°C to 85°C
2.3
2.3
2.5
2.7
V
VREG25
Regulator output voltage
2.45 V ≤ VREGIN < 2.7 V, IOUT ≤ 3 mA
TA = –40°C to 85°C
VREG25 = 0 V
TA = –40°C to 85°C
(2)
ISHORT
Short circuit current limit
250
mA
(1) LDO output current, IOUT, is the total load current. Use the LDO regulator to power the internal fuel gauge only.
(2) Specified by design. Not production tested.
Copyright © 2016, Texas Instruments Incorporated
5
bq34110
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
www.ti.com.cn
6.9 Electrical Characteristics: Internal Temperature Sensor
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Internal temperature
sensor voltage gain
GTEMP
–2
mV/°C
6.10 Electrical Characteristics: Low-Frequency Clock Oscillator
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
Operating frequency
TEST CONDITIONS
MIN
TYP
32.768
0.25%
0.25%
0.25%
500
MAX UNIT
f(LOSC)
kHz
1.5%
TA = 0°C to 60°C
–1.5%
–2.5%
–4%
f(EIO)
Frequency error(1)(2)
Start-up time(3)
TA = –20°C to 70°C
TA = –40°C to 85°C
2.5%
4%
t(SXO)
µs
(1) The frequency drift is included and measured from the trimmed frequency at VREG25 = 2.5 V, TA = 25°C.
(2) The frequency error is measured from 32.768 kHz.
(3) The start-up time is defined as the time it takes for the oscillator output frequency to be ±3%.
6.11 Electrical Characteristics: High-Frequency Clock Oscillator
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
8.389
MAX UNIT
MHz
f(LOSC)
Operating frequency
TA = 0°C to 60°C
–2%
–3%
0.38%
0.38%
0.38%
2%
f(EIO)
Frequency error(1)(2)
Start-up time(3)
TA = –20°C to 70°C
TA = –40°C to 85°C
3%
–4.5%
4.5%
t(SXO)
5
ms
(1) The frequency drift is included and measured from the trimmed frequency at VREG25 = 2.5 V, TA = 25°C.
(2) The frequency error is measured from 8.389 MHz.
(3) The start-up time is defined as the time it takes for the oscillator output frequency to be ±3%.
6.12 Electrical Characteristics: Integrating ADC (Coulomb Counter)
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Differential input
voltage range
V(SR)
V(SR) = V(SRP) – V(SRN)
–0.125
0.125
V
Input voltage range,
V(SRP) and V(SRN)
V(SRP), V(SRN)
–0.125
14
0.125
15
V
Conversion time
Resolution
Single conversion
1
s
tSR_CONV
bits
µV
VOS(SR)
INL
Input offset
10
Integral nonlinearity
error
±0.007%
FSR(1)
Effective input
resistance(2)
ZIN(SR)
2.5
MΩ
ILKG(SR)
Input leakage current(2)
0.3
µA
(1) Full-scale reference
(2) Specified by design. Not tested in production.
6
Copyright © 2016, Texas Instruments Incorporated
bq34110
www.ti.com.cn
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
6.13 Electrical Characteristics: ADC (Temperature and Voltage Measurements)
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
0.05
0.05
TYP
MAX UNIT
Internal voltage divider inactive, internal VREF
Internal voltage divider activated, internal VREF
1
V
V
ADC input voltage range
for BAT measurement
4.5
VIN((ADC)
ADC input voltage for TS
pin measurement
0
VREG25
V
Conversion time
Resolution
125
15
ms
bits
mV
(1)
tADC_CONV
VOS(ADC)
Single conversion
14
Input offset
1
5
Effective input resistance
(TS with internal pull-
down activated)(1)
ZADC_TS
kΩ
When not measuring cell voltage (internal
voltage divider inactive)
8
MΩ
Effective input resistance
(BAT)(1)
ZADC_BAT
During measurement of cell voltage using
internal divider (internal voltage divider active)
100
kΩ
ILKG(ADC)
Input leakage current(1)
0.3
µA
(1) Specified by design. Not tested in production.
6.14 Electrical Characteristics: Data Flash Memory
TA = –40°C to 85°C, 2.4 V < VREG25 < 2.6 V; typical values at TA = 25°C and VREG25 = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Data retention(1)
10
Years
tDR
Flash –programming
write cycles(1)
20,000
Cycles
Word programming
time(1)
tWORDPROG
ICCPROG
2
ms
Flash-write supply
current(1)
5
10
mA
(1) Specified by design. Not tested in production.
6.15 Timing Requirements: I2C-Compatible Interface Timing Characteristics
TA = –40°C to 85°C, 2.4 V < VREGIN = VBAT < 5 V; typical values at TA = 25°C and VREGIN = VBAT = 3.6 V (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
300
UNIT
ns
tR
SCL/SDA rise time
SCL/SDA fall time
tF
300
ns
tW(H)
tW(L)
tSU(STA)
SCL pulse width (high)
SCL pulse width (low)
Setup for repeated start
600
1.3
ns
µs
600
ns
Start to first falling edge
of SCL
td(STA)
600
ns
tSU(DAT)
th(DAT)
Data setup time
Data hold time
100
0
ns
ns
ns
tSU(STOP)
Setup time for stop
600
Bus free time between
stop and start
tBUF
fSCL
66
µs
Clock frequency
400
kHz
Copyright © 2016, Texas Instruments Incorporated
7
bq34110
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Figure 1. I2C-Compatible Interface Timing Diagram
6.16 Typical Characteristics
15
10
5
200
160
120
80
40
0
0
-5
-40
-80
-120
-160
-200
-10
-15
-40èC
-20èC
25èC
65èC
85èC
-40°C
-20°C
25°C
65°C
85°C
-20
2800 3000 3200 3400 3600 3800 4000 4200 4400
25.2
27
28.8 30.6 32.4 34.2
Battery Voltage (V)
36
37.8 39.6
Battery Voltage (mV)
D001
D002
Figure 2. V(Err) Across VIN (0 mA)
Figure 3. V(Err) Across VIN (0 mA) for a 9-Series
Configuration
2
1
25
20
15
10
5
0
-1
-2
-3
-4
-5
-6
-7
-8
0
-5
-10
-15
-20
-25
-40èC
-20èC
25èC
65èC
85èC
-9
-3000
-2000
-1000
0
1000
2000
3000
-40
-20
0
20
40
60
80
100
Current (mA)
Temperature (èC)
D003
D004
Figure 4. I(Err)
Figure 5. T(Err)
8
Copyright © 2016, Texas Instruments Incorporated
bq34110
www.ti.com.cn
ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
7 Detailed Description
7.1 Overview
The bq34110 device incorporates multiple capabilities to provide detailed and sophisticated information on
single-cell and multi-cell battery packs. Several different battery chemistries are supported, including Li-Ion,
LiFePO4, lead-acid (PbA), Nickel Metal Hydride (NiMH), and Nickel Cadmium (NiCd). The device integrates a
gas gauge for monitoring battery charge level, an End-Of-Service (EOS) Determination function to evaluate when
a battery is nearing the end of its usable life, a specialized WHr Charge Termination function to enable battery
charging to a targeted energy capacity, a charge control scheme using direct pin control, SHA-1/HMAC-based
authentication, and lifetime data logging functionality.
NOTE
Formatting Conventions in This Document:
Commands: italics with parentheses and no breaking spaces; for example, Control()
Data Flash: italics, bold, and breaking spaces; for example, Design Capacity
Register Bits and Flags: brackets only; for example, [TDA]
Data Flash Bits: italic and bold; for example, [XYZ1]
Modes and States: ALL CAPITALS; for example, UNSEALED mode
7.2 Functional Block Diagram
CE REGIN
VSS REG25
BAT
TS
Analog Peripherals
Clock Generator
Power Control
POWER-ON RESET
SRP
Reference
SRN
ADC
CC
ALERT1
ALERT2
Analog
Interface
&
RAM
Memory
CPU
I/O Control
Digital Peripherals
I2C TIMER
SDA
SCL
LEN
Flash
Memory
ROM
Memory
INTERRUPTS
VEN/GPIO
Copyright © 2016 Texas Instruments Incorporated
,
7.3 Feature Description
The bq34110 gas gauge uses Compensated End-of-Discharge Voltage (CEDV) technology to accurately predict
the battery capacity and other operational characteristics of the battery, and can be interrogated by a host
processor to provide cell information, such as remaining capacity, full charge capacity, and average current.
The integrated End-Of-Service (EOS) Determination function is specifically intended for applications where the
battery is rarely discharged, such as in uninterruptible power supplies (UPS), enterprise server backup systems,
and telecommunications backup modules. In such systems, the battery may remain in a fully (or near-fully)
charged state for much of its lifetime, with it rarely or never undergoing a significant discharge. If the health of the
battery in such a system is not monitored regularly, then it may degrade beyond the level required for a system
backup/discharge event, and thus fail precisely at the time when it is needed most.
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9
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Feature Description (continued)
The EOS Determination function monitors the health of the battery through the use of infrequent Learning
Phases, which involves a controlled discharge of ~1% capacity, and provides an alert to the system when the
battery is approaching the end of its usable service. By coordinating battery charging with the Learning Phases,
the battery capacity available to the system can be maintained above a preselected level to avoid compromising
the ability for the battery to support a system discharge event.
The bq34110 device can support multi-cell battery configurations with maximum voltage up to 65 V through the
use of external and internal resistive divider networks to reduce the voltage to an acceptable range for the
device’s integrated ADC. These resistive dividers are actively controlled to avoid unnecessary power dissipation
when not needed. The device integrates an internal temperature sensor as well as support for an external NTC
thermistor, such as a Semitec 103AT or Mitsubishi BN35-3H103FB-50.
The battery current is monitored by measuring the voltage across a series resistor, RSENSE, which is placed in
series with the battery pack and has a typical value of 5 mΩ to 20 mΩ. The bq34110 device integrates two
ADCs, one of which is dedicated to current measurement, and the second used for measurement of several
other parameters, including temperature and voltage.
Communication with the device is provided through an I2C interface, supporting rates up to 400 kHz. Dual
ALERT pins are provided with programmable configuration, which enables them to be used for such functions as
a host interrupt/alert or controlling the battery charger.
To minimize power consumption, the bq34110 gauge has several power modes: NORMAL, SNOOZE, and
SLEEP, which are under register or algorithm control. In addition, a separate chip enable (CE) pin is provided to
control the internal LDO, which powers the bq34110 internal circuitry, and can put the device into SHUTDOWN
mode.
Information is accessed through a series of commands called Data Commands, which are indicated by the
general format Command(). These commands are used to read and write information in the bq34110 device’s
control and status registers, as well as its data flash locations.
Commands are sent from the host to the bq34110 device via I2C and can be executed during application
development, pack manufacture, or end-equipment operation. Cell information is stored in the bq34110 device in
non-volatile flash memory. Many of the data flash locations are accessible during application development and
pack manufacture. They cannot, generally, be accessed directly during end-equipment operation. Access to
these locations is achieved by using the bq34110 device’s companion evaluation software, through individual
commands, or through a sequence of data flash access commands. To access a desired data flash location, the
correct data flash subclass and offset must be known.
The bq34110 device provides 32 bytes of user-programmable data flash memory. This data space is accessed
through a data flash interface. For specifics on accessing the data flash, see the bq34110 Technical Reference
Manual (SLUUBF7).
A SHA-1/HMAC-based battery pack authentication feature is also implemented on the bq34110 device. When
the device is in UNSEALED mode, authentication keys can be (re)assigned. A scratch pad area is used to
receive challenge information from a host and to export SHA-1/HMAC encrypted responses. For more
information on authentication, see the bq34110 Technical Reference Manual (SLUUBF7).
7.3.1 Communications
7.3.1.1 I2C Interface
The bq34110 device supports the standard I2C read, incremental read, one-byte write quick read, and functions.
The 7-bit device address (ADDR) is the most significant 7 bits of the hex address and is fixed as 1010101. The
8-bit device address is therefore 0xAA or 0xAB for write or read, respectively.
10
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Feature Description (continued)
Host Generated
Fuel Gauge Generated
S
ADDR[6:0]
0
A
CMD[7:0]
A
DATA[7:0]
A
P
S
ADDR[6:0]
1
A
DATA[7:0]
N P
(a) 1-byte write
(b) quick read
DATA[7:0]
N
CMD[7:0]
ADDR[6:0]
1
A
ADDR[6:0]
S
0
A
P
A
Sr
(c) 1-byte read
A
Sr
1
A
ADDR[6:0]
A
N P
S
ADDR[6:0]
0
A
CMD[7:0]
DATA[7:0]
DATA[7:0]
. . .
(d) incremental read
Figure 6. Supported I2C formats: (a) 1-byte write, (b) quick read, (c) 1 byte-read, and (d) incremental read
(S = Start, Sr = Repeated Start, A = Acknowledge, N = No Acknowledge, and P = Stop).
The “quick read” returns data at the address indicated by the address pointer. The address pointer, a register
internal to the I2C communication engine, increments whenever data is acknowledged by the device or the I2C
master. “Quick writes” function in the same manner and are a convenient means of sending multiple bytes to
consecutive command locations (such as 2-byte commands that require two bytes of data).
S
ADDR[6:0]
0
A
CMD[7:0]
A
DATA[7:0]
A
P
Figure 7. Attempt to Write a Read-Only Address (Nack After Data Sent By Master)
CMD[7:0]
S
ADDR[6:0]
0
A
N P
Figure 8. Attempt to Read an Address Above 0x7F (NACK Command)
CMD[7:0]
DATA[7:0]
A
DATA[7:0]
ADDR[6:0]
S
0
A
N
P
A
N
. . .
Figure 9. Attempt at Incremental Writes (Nack All Extra Data Bytes Sent)
A
Sr
1
A
ADDR[6:0]
A
N P
S
ADDR[6:0]
0
A
CMD[7:0]
DATA[7:0]
DATA[7:0]
. . .
Address
0x7F
Data From
addr 0x7F
Data From
addr 0x00
Figure 10. Incremental Read at the Maximum Allowed Read Address
7.3.1.2 I2C Time Out
The I2C engine releases both SDA and SCL if the I2C bus is held low for a time programmed in data flash. If the
device were holding the lines, releasing them frees the master to drive the lines.
Detailed examples of I2C transactions accessing gauge data can be found in the Using I2C Communication with
the bq275xx Series of Fuel Gauges Application Report (SLUA467).
Copyright © 2016, Texas Instruments Incorporated
11
bq34110
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www.ti.com.cn
7.4 Device Functional Modes
The bq34110 device has four functional power modes: NORMAL, SNOOZE, SLEEP, and SHUTDOWN, based
on firmware and/or host control.
•
•
In NORMAL mode, the device is fully powered and can execute any allowable task.
In SNOOZE mode, the device periodically wakes to take data measurements and updates the data set, after
which it then returns directly to SNOOZE.
•
•
In SLEEP mode, the device maintains the low-frequency oscillator but turns off the high-frequency oscillator
and exists in a reduced-power state, periodically taking measurements and performing calculations.
In SHUTDOWN mode, the device is fully powered down and can only be awakened using the chip enable
(CE) pin.
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The bq34110 gas gauge is a highly configurable device with multiple features that can be used individually or
simultaneously (with some restrictions). The CEDV gas gauging function together with its support for an external
voltage divider allows gauging of high voltage, multi-cell battery configurations of various chemistries. The EOS
Determination function is intended for rarely discharged applications and evaluates the condition of the battery
without requiring conventional maintenance cycles. These and additional features are described in detail in the
bq34110 Technical Reference Manual (SLUUBF7).
12
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8.2 Typical Applications
Figure 11 is a simplified schematic of the bq34110 system used in a multi-cell configuration.
PACK+
B
RLEN
C
REGIN
I2C CLK
10k 10k
100
100
I2C DATA
100
100
/ALERT2
/ALERT1
1
2
3
4
5
6
7
VEN
SDA 14
SCL 13
ALERT1
LEN
REG25
ALERT2 12
TS 11
10k NTC
0.1
µF
BAT
CHIP ENABLE
CE
SRN 10
.01
75 ppm
100
0.1 µF
REGIN
REG25
REGIN
REG25
SRP
VSS
9
8
A
100
0.1 µF
0.1 µF
0.1 µF
1 µF
PACK–
Copyright © 2016 Texas Instruments Incorporated
,
If power control of the gauge is not required by the system, then CE should be
connected directly to REGIN.
A
B
C
Required for applications of more than one-series cell; otherwise, REGIN can connect
directly to single-cell BAT+ or an alternative power source.
Required for applications of more than one-series cell; otherwise, BAT connects
directly to single-cell BAT+ and VEN can be left unconnected.
Figure 11. bq34110 Simplified System Diagram
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www.ti.com.cn
Typical Applications (continued)
Figure 12 shows the schematic of the bq34110 EVM, and depicts how the device can be used in the system.
REGIN
REGIN
R1
10k
R2
100k
1
2
3
4
5
6
7
8
<=5V
<=5V
>5V
Q1
2N7002-7-F
R3
10.0k
R4
10.0k
1
1
Q2
BSS84W-7-F
2008-07-09
R5
165k
J1
R6
4
3
2
1
>5V
SDA
SCL
100
R7
SDA
SCL
GND
J2
D1
BZT52C5V6T-7
5.6V
100
R8
16.5k
22-05-3041
R9
300k
1
REG25
REGIN
GND
Q3
BSS138W-7-F
U2
U3
R10 R11
100k 100k
GND
GND
R12
300k
J3
1
3
5
2
4
6
GND
BAT+
R13
300k
J4
PEC02SAAN
J5
GND
GND
C1
3300pF
U1
BAT
GND
J6
R14
1.0k
4
2
5
4
3
2
1
ALERT1
ALERT1
ALERT2
VEN
LEN
R15
1.0k
13
14
12
SCL
SDA
ALERT2
R16
J7
R17
1.0k
1
2
3
1
100
VEN/GPIO
BAT+
BAT-
PACK-
GND
R18
0.01
BAT-
9
SRP
SRN
R19
1.0k
C2
0.1µF
10
3
ED555/5DS
LEN
PACK-
R20
100
39357-0003
6
7
11
REGIN
REG25
TS
REG25
RT1
GND
REGIN
REG25
REG25
BAT+
t°
10.0k ohm
C3
0.1µF
C4
0.1µF
NT1
Net-Tie
5
8
CE
VSS
J8
REGIN
GND
GND
GND
PEC02SAAN
J9
C5
0.1µF
C6
1µF
R21
20
R22
1.0M
J10
39357-0002
GND
GND
GND
PEC02SAAN
Q4
CSD17313Q2
3
PACK-
Copyright © 2016 Texas Instruments Incorporated
,
Figure 12. bq34110 EVM Schematic
8.2.1 Design Requirements
The bq34110 device supports several circuit configuration options that can be decided upon during the system
design phase. Using the device with a single-cell battery versus a multi-cell configuration determines if there is a
need for a battery divider and associated control using the VEN pin (as shown in Figure 11). The functions used
within the bq34110 device also determine the pin usage, with the device incorporating flexibility to reuse pins for
other purposes if the system configuration permits. For example, if a single-cell configuration is selected, then the
VEN pin can be used as part of a direct charge control scheme. Similarly, the LEN, ALERT1, and/or ALERT2
pins can also be repurposed to support direct charge control. For additional design guidelines, refer to the
bq34110 EVM User’s Guide (SLUUBI1).
8.2.2 Detailed Design Procedure
8.2.2.1 BAT Voltage Sense Input
A ceramic capacitor at the input to the BAT pin is used to bypass AC voltage ripple to ground, greatly reducing
its influence on battery voltage measurements. It proves most effective in applications with load profiles that
exhibit high-frequency current pulses (that is, cell phones) but is recommended for use in all applications to
reduce noise on this sensitive high-impedance measurement node. If the device is used in a multi-cell
configuration with an external resistive voltage divider, it is recommended that the resistors used therein be
selected with temperature coefficient of resistance (TCR) of 75-ppm or below. More detail on the design of the
voltage divider network is discussed in the bq34110 Technical Reference Manual (SLUUBF7).
14
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Typical Applications (continued)
8.2.2.2 SRP and SRN Current Sense Inputs
The filter network at the input to the coulomb counter is intended to improve differential mode rejection of voltage
measured across the sense resistor. These components should be placed as close as possible to the coulomb
counter inputs, and the routing of the differential traces length-matched to best minimize impedance mismatch-
induced measurement errors.
8.2.2.3 Sense Resistor Selection
Any variation encountered in the resistance present between the SRP and SRN pins of the fuel gauge will affect
the resulting differential voltage, and derived current, it senses. As such, it is recommended to select a sense
resistor with minimal tolerance and temperature coefficient of resistance (TCR) characteristics. The standard
recommendation based on the best compromise between performance and price is a 1% tolerance, 75-ppm drift
sense resistor with a 1-W power rating.
8.2.2.4 TS Temperature Sense Input
Similar to the BAT pin, a ceramic decoupling capacitor for the TS pin is used to bypass AC voltage ripple away
from the high-impedance ADC input, minimizing measurement error. It should be placed as close as possible to
the respective input pin for optimal filtering performance.
8.2.2.5 Thermistor Selection
The fuel gauge temperature sensing circuitry is designed to work with a negative temperature coefficient-type
(NTC) thermistor with a characteristic 10-kΩ resistance at room temperature (25°C). The default curve-fitting
coefficients configured in the fuel gauge specifically assume a 103AT-2 type thermistor profile and so that is the
default recommendation for thermistor selection purposes. Moving to a separate thermistor resistance profile (for
example, JT-2 or others) requires an update to the default thermistor coefficients in data flash to ensure highest
accuracy temperature measurement performance.
8.2.2.6 REGIN Power Supply Input Filtering
A ceramic capacitor is placed at the input to the fuel gauge internal LDO to increase power supply rejection
(PSR) and improve effective line regulation. It ensures that voltage ripple is rejected to ground instead of
coupling into the internal supply rails of the fuel gauge.
8.2.2.7 REG25 LDO Output Filtering
A ceramic capacitor is also needed at the output of the internal LDO to provide a current reservoir for fuel gauge
load peaks during high peripheral utilization. It acts to stabilize the regulator output and reduce core voltage
ripple inside the fuel gauge.
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www.ti.com.cn
Typical Applications (continued)
8.2.3 Application Curves
8.8
8.7
8.6
8.5
8.4
8.3
8.2
8.1
8
2.65
VREGIN = 2.7 V
VREGIN = 4.5 V
2.6
2.55
2.5
2.45
2.4
2.35
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
Temperature (èC)
Temperature (ꢀC)
D002
D001
Figure 14. High-Frequency Oscillator Frequency vs.
Temperature
Figure 13. Regulator Output Voltage vs. Temperature
34
5
4
33.5
33
3
2
32.5
32
1
0
-1
-2
-3
-4
-5
31.5
31
30.5
30
-40
-20
0
20
40
60
80
100
-30
-20
-10
0
10
20
30
40
50
60
Temperature (èC)
Temperature (èC)
D003
D004
Figure 15. Low-Frequency Oscillator Frequency vs.
Temperature
Figure 16. Reported Internal Temperature Measurement
vs. Temperature
9 Power Supply Recommendations
Power supply requirements for the bq34110 device are simplified due to the presence of the internal LDO-
voltage regulation. The REGIN pin accepts any voltage level between 2.7 V and 4.5 V, which is optimum for a
single-cell Li-Ion application. For higher battery voltage applications, a simple preregulator can be provided to
power the bq34110 device. Decoupling the REGIN pin should be done with a 0.1-μF 10% ceramic X5R capacitor
placed close to the device. While the preregulator circuit is not critical, special attention should be paid to its
quiescent current and power dissipation. The input voltage should handle the maximum battery stack voltage.
The output voltage can be centered within the 2.7-V to 4.5-V range as recommended for the REGIN pin.
For high stack count applications, a commercially available LDO is often the best quality solution, but comes with
a cost tradeoff. To lower the BOM cost, the following approaches are recommended.
In Figure 17, Q1 is used to drop the battery stack voltage to roughly 4 V to power the bq34110 device's REGIN
pin. To avoid unwanted quiescent current consumption, R1 should be set as high as is practical. It is
recommended to use a low-current Zener diode.
16
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bq34110
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ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
From Battery Stack +
R1
Q1
~4 V
D1
5.6 V
To REGIN
Figure 17. Q1 Dropping Battery Stack Voltage to 4 V
Alternatively, if the range of a high-voltage battery stack can be well-defined, a simple source follower based on
a resistive divider can be used to lower the BOM cost and the quiescent current. For example:
From Battery Stack +
R1
Q1
2.7 V ~ 4.5 V
R2
To REGIN
Figure 18. Source Follower on a Resistive Divider
10 Layout
10.1 Layout Guidelines
Attention to layout is critical to the success of any battery management circuit board. The mixture of high-current
paths with an ultralow-current microcontroller creates the potential for design issues that are not always trivial to
solve. Some of the key areas of concern are described in the following sections and can help to enable success.
10.1.1 Power Supply Decoupling Capacitor
Power supply decoupling from REG25 to ground is important for optimal operation of the gas gauge. To keep the
loop area small, place this capacitor next to the IC and use the shortest possible traces. A large loop area
renders the capacitor useless and forms a small-loop antenna for noise pickup. Ideally, the traces on each side
of the capacitor should be the same length and run in the same direction to avoid differential noise during ESD. If
possible, place a via near the VSS pin to a ground plane layer.
10.1.2 Capacitors
Power supply decoupling for the gas gauge requires 0.1-μF ceramic capacitors for the BAT and REGIN pins.
These should be placed reasonably close to the IC without using long traces back to VSS. The LDO voltage
regulator, whether external or internal to the main IC, requires a 1-μF ceramic capacitor to be placed fairly close
to the regulation output pin (REG25). This capacitor is for amplifier loop stabilization and as an energy well for
the 2.5-V supply.
10.1.3 Communication Line Protection Components
5.6-V Zener diodes are included on the I2C lines to protect the communication pins of the gas gauge from ESD.
These diodes should be located as close as possible to the pack connector. The grounded end of these Zener
diodes should be returned to the PACK(–) node rather than to the low-current digital ground system. This way,
ESD is diverted away from the sensitive electronics as much as possible.
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10.2 Layout Example
10.2.1 Ground System
The gas gauge requires a low-current ground system separate from the high-current PACK(–) path. ESD ground
is defined along the high-current path from the PACK(–) terminal to the sense resistor. It is important that the
low-current ground systems only connect to the PACK(–) path at the sense resistor Kelvin pick-off point. It is
recommended to use an optional inner layer ground plane for the low-current ground system.
In Figure 19, the green area shows an example of using the low-current ground as a shield for the gas gauge
circuit. Notice how it is kept separate from the high-current ground, which is shown in red. The high current path
is joined with the low-current path only at one point, shown with the small blue connection between the two
planes.
Figure 19. High-Current Versus Low-Current Ground Layout
10.2.2 Kelvin Connections
Kelvin voltage sensing is very important to accurately measure current and cell voltage. Note that in Figure 19
the differential connections at the sense resistor do not add any voltage drop across the copper etch that carries
the high current path through the sense resistor.
10.2.3 Board Offset Considerations
Although the most important component for board offset reduction is the decoupling capacitor for REGIN,
additional benefit is possible by using this recommended pattern for the coulomb counter differential low-pass
filter network.
Maintain the symmetrical placement pattern shown for optimum current offset performance. Use symmetrical
shielded differential traces, if possible, from the sense resistor to the 100-Ω resistors, as shown in Figure 20.
18
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bq34110
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ZHCSFQ8B –AUGUST 2016–REVISED NOVEMBER 2016
Layout Example (continued)
Figure 20. Differential Connection Between SRP and SRN Pins with Sense Resistor
10.2.4 ESD Spark Gap
Protect the communication lines from ESD with a spark gap at the connector. Figure 21 shows the recommended
pattern with its 0.2-mm spacing between the points.
Figure 21. Recommended Spark-Gap Pattern Helps Protect Communication Lines from ESD
版权 © 2016, Texas Instruments Incorporated
19
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www.ti.com.cn
11 器件和文档支持
11.1 文档支持
11.1.1 相关文档ꢀ
•
•
•
《bq34110 技术参考手册》（文献编号：SLUUBF7）
《bq34110 EVM 用户指南》（文献编号：SLUUBI1）
《使用 I2C 与 bq275xx 系列电量监测计通信应用报告》（文献编号：SLUA467）
11.2 接收文档更新通知
如需接收文档更新通知，请访问 www.ti.com.cn 网站上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册
后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。
11.3 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 商标
E2E is a trademark of Texas Instruments.
通过 I2C is a trademark of NXP B.V. Corporation.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。
20
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ34110PW
ACTIVE
ACTIVE
TSSOP
TSSOP
PW
PW
14
14
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 85
-40 to 85
BQ34110
BQ34110
BQ34110PWR
2000 RoHS & Green
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ34110PWR
TSSOP
PW
14
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
TSSOP PW 14
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 38.0
BQ34110PWR
2000
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
PW TSSOP
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
BQ34110PW
14
90
530
10.2
3600
3.5
Pack Materials-Page 3
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