ALM2402F-Q1 [TI]
汽车类双通道高输出电流运算放大器;型号: | ALM2402F-Q1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 汽车类双通道高输出电流运算放大器 放大器 运算放大器 |
文件: | 总33页 (文件大小:2695K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ALM2402F-Q1
ZHCSJP5B –MAY 2019 –REVISED OCTOBER 2021
具有高电流输出、用于旋转变压器励磁的
ALM2402F-Q1 汽车类双路运算放大器
1 特性
3 说明
• 符合面向汽车应用的AEC-Q100 标准:
– 温度等级1:–40°C 至+125°C,TA
• 提供功能安全
ALM2402F-Q1 是一款双电源运算放大器,其特性和性
能使该器件更适合基于旋转变压器的汽车应用。该器件
具有高增益带宽和压摆率以及连续高输出电流驱动功
能,从而成为提供现代旋转变压器所需的低失真和差分
高振幅激励的理想之选。在易受故障影响的电线上驱动
模拟信号时,电流限制和过热检测功能可增强整体系统
稳健性。
– 可帮助进行功能安全系统设计的文档
• 低失调电压:1mV(典型值)
• 高输出电流驱动:400mA 持续电流(每通道)
– 取代分立式运算放大器和晶体管
• 两个电源的宽电源电压范围(最高16V)
• 过热关断
ALM2402F-Q1 的轨到轨输出通过低 Rds(on) PMOS 和
NMOS 晶体管实现,可保持较低的功率耗散。具有散
热焊盘和低 RθJA 的小型 HTSSOP 封装使用户能够向
负载提供高电流,同时最大程度地减小布板空间。当用
于现代混合动力和电动汽车时,该最小化的布板空间是
ALM2402F-Q1 提供的主要优势之一。
• 电流限制
• 实现低IQ 应用的关断引脚
• 在大容性负载下保持稳定
• 2MHz 增益带宽,具有3.4V/µs 的压摆率
• 内部射频/EMI 滤波器
通过本页底部的最大输出电压与频率间的关系 图,可
确定ALM2402F-Q1 的最大输出电压。
• 封装:14 引脚HTSSOP (PWP)
2 应用
器件信息(1)
• 基于旋转变压器的汽车应用
• 逆变器和电机控制
• 制动系统
封装尺寸(标称值)
器件型号
封装
ALM2402F-Q1
HTSSOP (14)
5.00mm × 4.40mm
• 电动助力转向(EPS)
• 后视镜模块
• 汽车电子视镜
(1) 要了解所有可用封装,请参见数据表末尾的封装选项附录。
• 伺服驱动器功率级模块
VCC_OUT
14
Vs = 12 V
Vs = 4.5 V
12
VCC
VCC
10
8
VCC_O1
IN1+
IN1–
+
+
½
ALM2402F-Q1
OUT1
OPAMP
–
–
OTF1
6
GND
4
2
0
简化版原理图
1
10
100
1k 10k
Frequency (Hz)
100k
1M
10M
D013
最大输出电压与频率间的关系
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBOS927
ALM2402F-Q1
ZHCSJP5B –MAY 2019 –REVISED OCTOBER 2021
www.ti.com.cn
Table of Contents
7.4 Device Functional Modes..........................................17
8 Application and Implementation..................................18
8.1 Application Information............................................. 18
8.2 Typical Application.................................................... 19
9 Power Supply Recommendations................................23
10 Layout...........................................................................24
10.1 Layout Guidelines................................................... 24
10.2 Layout Example...................................................... 24
11 Device and Documentation Support..........................25
11.1 Documentation Support.......................................... 25
11.2 接收文档更新通知................................................... 25
11.3 支持资源..................................................................25
11.4 Trademarks............................................................. 25
11.5 Electrostatic Discharge Caution..............................25
11.6 术语表..................................................................... 25
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics: VS = 12 V...........................5
6.6 Electrical Characteristics: VS = 5 V.............................6
6.7 Typical Characteristics................................................8
7 Detailed Description......................................................14
7.1 Overview...................................................................14
7.2 Functional Block Diagram.........................................14
7.3 Feature Description...................................................15
Information.................................................................... 25
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision A (September 2019) to Revision B (October 2021)
Page
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
• 向特性部分添加了功能安全的项目符号..............................................................................................................1
Changes from Revision * (May 2019) to Revision A (September 2019)
Page
• 将器件状态从预告信息(预发布)更改为量产数据(正在供货).......................................................................1
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5 Pin Configuration and Functions
IN(1)œ
IN(1)+
1
2
3
4
5
6
7
14
13
12
11
10
9
GND
OUT(1)
VS_O(1)
VS
OTF/SH_DN
IN(2)+
Thermal
Pad
IN(2)œ
VS_O(2)
OUT(2)
NC
GND
NC
8
Not to scale
图5-1. PWP (14-Pin HTSSOP) Package, Top View
表5-1. Pin Functions
PIN
I/O
DESCRIPTION
NAME
GND
NO.
6, 14
2
Input
Input
Input
Input
Input
Ground pin (both ground pins must be used and connected together on board)
Noninverting op amp input terminal 1
Noninverting op amp input terminal 2
Inverting op amp input terminal 1
Inverting op amp input terminal 2
No internal connection (do no connect)
Overtemperature flag and shutdown (see 表7-1 for truth table)
Op amp output 1
IN(1)+
IN(2)+
IN(1)–
IN(2)–
NC
4
1
5
7, 8
3
—
Input/output
Output
Output
Input
OTF/SH_DN
OUT(1)
OUT(2)
VS
13
9
Op amp output 2
11
12
10
Gain stage supply pin
VS_O(1)
VS_O(2)
Input
Output stage supply pin
Input
Output stage supply pin
Connect the exposed thermal pad to ground for best thermal performance. Do not connect
the thermal pad to any pin other than GND. The thermal pad can also be left floating.
Thermal pad
—
—
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
–0.3
–0.3
–0.3
MAX
UNIT
V
18
Input supply voltage, VS = (V+) –(V–)
Output supply voltage, VS_O
Positive and negative input to GND voltage
Overtemperature flag pin current
Overtemperature flag pin voltage
Output short-circuit(2)
18
V
18
V
20
mA
V
0
Continuous
–40
7
Continuous
125
Operating temperature
°C
°C
°C
Junction temperature
150
Storage temperature, Tstg
150
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) Short-circuit to ground; one amplifier per package. Long-term, short-circuit operation leads to an elevated die temperature and a
shorter lifetime, and places the amplifier into open-loop operation. Prolonged open-loop operation (especially at high temperatures and
supplies) can lead to a shift in the dc electrical characteristics, such as offset voltage (see the Open-Loop and Closed-Loop Operation
section).
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per AEC Q100-002(1)
HBM ESD Classification Level 2
±2000
V(ESD)
Electrostatic discharge
V
Charge Device Model (CDM), per AEC Q100-011
CDM ESD Classification Level C5
±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4.5
3
NOM
MAX
16
UNIT
V
V
Input supply voltage, VS = (V+) –V(–)
Output supply voltage, VS_O
16
Continous output current (sourcing) (1)
Continous output current (sinking) (1)
OTF input high voltage (op amp on or full operational state)
OTF input low voltage (op amp off or shutdown state)
Postitive and negative input to GND voltage
Overtemperature flag pin voltage
400
400
mA
mA
V
1
0.35
7
V
0
2
V
5
V
Specified temperature
125
°C
–40
(1) Current Limit must be taken into consideration when choosing maximum output current.
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6.4 Thermal Information
ALM2402FQ1
THERMAL METRIC(1)
PWP (TSSOP)
14 PINS
46.5
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
33.0
Junction-to-board thermal resistance
27.6
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
1.5
ψJT
27.4
ψJB
RθJC(bot)
2.2
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics: VS = 12 V
at TA = 25°C, VS = VS_O1 = VS_O2 = 12 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, VOTF = 5 V, and VO = VS / 2 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFFSET VOLTAGE
±1
±7
VOS
Input offset voltage
mV
μV/°C
dB
±15
TA = –40°C to +125°C
dVOS/dT
PSRR
Input offset voltage drift
65
76
TA = –40°C to +125°C
VS = 10 V to 16 V
70
65
Input offset voltage versus
power supply
VS = 10 V to 16 V, TA = –40°C to +125°C
INPUT BIAS CURRENT
±3.5
±2
±15
±140
±12
IB
Input bias current
nA
nA
TA = –40°C to +125°C
TA = –40°C to +125°C
IOS
Input offset current
Input voltage noise
±35
NOISE
35
5.5
115
20
μVPP
µVRMS
f = 0.1 Hz to 10 Hz
eN
iN
Input voltage noise density f = 1 kHz
nV/√Hz
fA/√Hz
Input current noise
f = 1 kHz
INPUT VOLTAGE RANGE
VCM
Common-mode voltage
VS > 8.2 V
0.2
81
52
7
V
0.2 V < VCM < 7 V
97
93
Common-mode rejection
ratio
CMRR
dB
TA = –40℃to +125℃, 0.2 V < VCM < 7 V
OPEN-LOOP GAIN
85
60
0.3 V < VO < (VS) –1.5 V,
RL = 10 kΩ
AOL
Open-loop voltage gain
dB
TA = –40°C to +125°C
FREQUENCY RESPONSE
GBW
SR
tS
Gain-bandwidth product
CL = 15 pF
2.1
3.4
2.4
10
MHz
V/μs
μs
Slew rate
5-V step, G = +1 V/V, CL = 50 pF
To 0.1%, 5-V step , G = +1 V/V
VIN × (–1) × gain > VS
Settling time
Overload recovery time
μs
(V+) = 11 V, (V–) = –5 V, VO = 6 VPP, G = +2 V/V, f = 1
kHz,
RL = 100 Ω
Total harmonic distortion +
noise
THD+N
dB
–73
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6.5 Electrical Characteristics: VS = 12 V (continued)
at TA = 25°C, VS = VS_O1 = VS_O2 = 12 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, VOTF = 5 V, and VO = VS / 2 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
TA = 25°C
0.3
0.5
TA = –40°C to +125℃,
ISOURCE = 200 mA
130
300
Positive rail, VID = 100 mV
mV
TA = –40°C to +125℃,
ISOURCE = 100 mA
60
0.4
150
0.6
Voltage output swing from
rail
Vo
TA = 25°C
TA = –40°C to +125℃,
ISINK = 200 mA
200
550
Negative rail, VID = 100 mV
mV
mA
TA = –40°C to +125℃,
ISINK = 100 mA
100
200
Sinking (short to supply)
Sourcing (short to ground)
540
750
ISC
Short-circuit current
POWER SUPPLY
4
5
6
IO = 0 A, TA = 25℃
Quiescent current per
amplifier
IQ
mA
IO = 0 A, TA = –40°C to +125°C
VOTF/SH_DN = 0 V
0.5
TEMPERATURE
Thermal shutdown
165
159
°C
°C
Thermal shutdown
recovery
Overtemperature fault low
voltage
VOL_OTF
400
mV
RPULLUP = 2.5 kΩ, VPULLUP = 5.0 V
VIH_OTF
VIL_OTF
Amplifier enable voltage
Amplifier disable voltage
1
V
V
0.35
6.6 Electrical Characteristics: VS = 5 V
at TA = 25°C, VS = VS_O1 = VS_O2 = 5 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, VOTF = 5 V, and VO = VS / 2 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFFSET VOLTAGE
TA = 25°C
±1
±7
VOS
Input offset voltage
mV
±15
TA = –40°C to +125°C
TA = –40°C to +125°C
VS = 4.5 V to 10 V
dVOS/dT
Input offset voltage drift
65
94
μV/°C
82
75
Input offset voltage versus
power supply
PSRR
dB
VS = 4.5 V to 10 V,
TA = –40°C to +125°C
INPUT BIAS CURRENT
TA = 25°C
0.5
±2
±2
±30
±2
IB
Input bias current
nA
nA
TA = –40°C to +125°C
TA = 25°C
IOS
Input offset current
±9
TA = –40°C to +125°C
NOISE
35
5.5
115
20
μVPP
µVRMS
Input voltage noise
f = 0.1 Hz to 10 Hz
eN
iN
Input voltage noise density f = 1 kHz
Input current noise f = 1 kHz
nV/√Hz
fA/√Hz
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6.6 Electrical Characteristics: VS = 5 V (continued)
at TA = 25°C, VS = VS_O1 = VS_O2 = 5 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, VOTF = 5 V, and VO = VS / 2 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT VOLTAGE RANGE
VCM
Common-mode voltage
0.2
80
V
(V+) –1.2
95
0.2 V < VCM < (V+) –1.2 V
Common-mode rejection
ratio
CMRR
dB
TA = –40℃to +125℃,
0.2 V < VCM < (V+) –1.2 V
52
OPEN-LOOP GAIN
TA = 25°C
85
60
93
0.3 V < VO < (VS) –1.5 V,
RL = 10 kΩ
AOL
Open-loop voltage gain
dB
TA = –40°C to +125°C
FREQUENCY RESPONSE
GBW
SR
tS
Gain-bandwidth product
CL = 15 pF
1.3
1.7
MHz
2-V step, G = +1 V/V,
CL = 50 pF
Slew rate
V/μs
Settling time
To 0.1%, 2-V step , G = +1 V/V
2
5
μs
μs
Overload recovery time
VIN × (–1) × gain > VS
VS = 5 V, VO = 2.82 VPP, G = +2 V/V,
f = 1 kHz, RL = 100 Ω
Total harmonic distortion +
noise
THD+N
dB
–73
OUTPUT
TA = 25°C
0.3
0.5
TA = –40°C to +125℃,
ISINK = 200 mA
130
300
Positive rail, VID = 100 mV
mV
TA = –40°C to +125℃,
ISINK = 100 mA
60
0.4
150
0.6
Voltage output swing from
rail
Vo
TA = 25°C
TA = –40°C to +125℃,
ISINK = 200 mA
200
575
Negative rail, VID = 100 mV
mV
mA
TA = –40°C to +125℃,
ISINK = 100 mA
100
200
Sinking (short to supply)
Sourcing (short to ground)
500
550
ISC
Short-circuit current
POWER SUPPLY
4
4.5
5
IO = 0 A, TA = 25℃
Quiescent current per
amplifier
IQ
mA
IO = 0 A, TA = –40°C to +125°C
VOTF/SH_DN = 0 V
0.5
TEMPERATURE
Thermal shutdown
165
159
°C
°C
Thermal shutdown
recovery
Overtemperature fault low
voltage
VOL_OTF
400
mV
RPULLUP = 2.5 kΩ, VPULLUP = 5.0 V
VIH_OTF
VIL_OTF
Amplifier enable voltage
Amplifier disable voltage
1
V
V
0.35
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6.7 Typical Characteristics
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
40
36
32
28
24
20
16
12
8
30
20
10
0
-40 èC
25 èC
-10
-20
-30
125 èC
4
-6
-5
-4
-3
-2
-1
0
Input Common-mode Voltage (V)
1
2
-120
-100
-80
-60
-40
-20
0
Offset Voltage Drift (µV/èC)
D017
D001
5 typical units
图6-2. Offset Voltage
图6-1. Offset Voltage Drift
vs Input Common-Mode Voltage
Production Distribution
5
4
120
180
Gain
Phase
100
80
60
40
20
0
150
120
90
3
2
1
0
60
-1
-2
-3
-4
-5
30
0
-20
-30
4
6
8
10
Supply Voltage (V)
12
14
16
100m
1
10
100
1k
Frequency (Hz)
10k
100k
1M
10M
D018
D002
5 typical units
CLOAD = 200 nF
RL = 50 Ω
图6-3. Offset Voltage vs Power Supply
图6-4. Open-Loop Gain and Phase
vs Frequency
65
30
20
10
0
VS = 12 V
VS = 4.5 V
G = +1
G = -1
G = +10
60
55
50
45
40
35
30
25
20
-10
-20
10
100
Load Capacitance (pF)
1000
100
1k
10k 100k
Frequency (Hz)
1M
10M
D003
D004
Gain = 1 V/V
图6-5. Phase Margin vs Capacitive Load
图6-6. Closed-Loop Gain vs Frequency
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6.7 Typical Characteristics (continued)
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
100
80
60
40
20
0
120
100
80
60
40
20
0
PSRR+, VS = 12 V
PSRR-, VS = 12 V
PSRR+, VS = 4.5 V
PSRR-, VS = 4.5 V
VS = 12 V
VS = 4.5 V
1
10
100
1k 10k
Frequency (Hz)
100k
1M
10M
1
10
100
1k 10k
Frequency (Hz)
100k
1M
10M
D005
D006
图6-7. PSRR vs Frequency
图6-8. CMRR vs Frequency
1
-40
1
-40
-60
-80
RLOAD = 100 W
RLOAD = 10K W
RLOAD = 100 W
RLOAD = 10K W
0.1
0.01
0.1
0.01
-60
-80
0.001
-100
0.001
-100
10m
100m
Output Amplitude (VRMS
1
100
1k
Frequency (Hz)
10k
)
D011
D010
Input signal
Measurement
VO = 8 VPP
Gain = 2 V/V
Measurement
frequency =1 kHz bandwidth = 80 kHz
bandwidth = 80 kHz
图6-10. THD+N vs Output Amplitude
图6-9. THD+N Ratio vs Frequency
14
12
10
8
32
24
16
8
Vs = 12 V
Vs = 4.5 V
IB
+
IB
-
6
0
4
IOS
-8
2
-16
0
1
-6
-4.5
-3
-1.5
0
Input Common-mode Voltage (V)
1.5
3
10
100
1k 10k
Frequency (Hz)
100k
1M
10M
D019
D013
图6-12. Input Bias Current
图6-11. Maximum Output Voltage
vs Common-Mode Voltage
vs Frequency
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6.7 Typical Characteristics (continued)
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
45
40
35
30
25
20
15
10
5
5
4.5
4
-40 èC
25 èC
3.5
3
IB
-
85 èC
2.5
2
IB
+
125 èC
1.5
1
IOS
0.5
0
0
-5
0
0.2
0.4 0.6
Output Current (A)
0.8
1
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
D022
D020
图6-14. Output Voltage Swing
图6-13. Input Bias Current vs Temperature
vs Output Source Current
0
-1.5
-3
130
125
120
115
110
105
100
95
85 èC
-40 èC
125 èC
90
-4.5
-6
85
25 èC
80
75
70
0
0.2
0.4
Output Current (A)
0.6
0.8
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
D024
D025
图6-15. Output Voltage Swing
图6-16. CMRR vs Temperature
vs Output Sink Current
94
92
90
88
86
84
82
80
78
76
74
72
70
Time (1 s/div)
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
D027
D026
图6-18. 0.1-Hz to 10-Hz Noise
图6-17. PSRR vs Temperature
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6.7 Typical Characteristics (continued)
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
10000
1000
100
3.5
3
2.5
2
1.5
1
0.5
0
10
5
0
2
4
6
8
10
Supply Voltage (V)
12
14
16
100m
1
10
100 1k
Frequency (Hz)
10k
100k
1M
D028
D007
5 typical units
VO = 8 VPP
图6-20. Quiescent Current vs Power Supply
图6-19. Input Voltage Spectral Noise Density vs Frequency
5
90
85
80
75
70
65
60
55
50
45
4.5
VS = 12 V
VS = 16 V
4
3.5
3
2.5
2
VS = 4.5 V
VS = 4.5 V
1.5
1
-40
-20
0
20
40
60
80
100 120 140
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
Temperature (èC)
D029
D030
5 typical units
RL = 100 Ω
图6-21. Quiescent Current vs Temperature
图6-22. Open-Loop Gain vs Temperature
100000
10000
1000
100
30
RISO = 0
RISO = 25
RISO = 50
25
20
15
10
5
0
-5
10
10
100
Capactiance (pF)
1000
100m
1
10
100
1k
Frequency (Hz)
10k
100k
1M
10M
D032
D012
10-mV output step
Gain = –1 V/V
图6-24. Small-Signal Overshoot
图6-23. Open-Loop Output Impedance
vs Capacitive Load
vs Frequency
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6.7 Typical Characteristics (continued)
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
50
VIN (V), VS = 12 V
RISO = 0
RISO = 25
RISO = 50
VOUT (V), VS = 12 V
VIN (V), VS = 4.5 V
VOUT (V), VS = 4.5 V
40
30
20
10
0
10
100
Capactiance (pF)
1000
Time (100 ms/div)
D033
D034
10-mV output step
Gain = 1 V/V
图6-25. Small-Signal Overshoot
图6-26. No Phase Reversal
vs Capacitive Load
VIN
VOUT, RLOAD = 10K W
VOUT, RLOAD = 50 W
VOUT
VIN
Time (5 ms/div)
Time (1 ms/div)
D035
D036
VS = 4.5 V
VIN = 10 mVPP
图6-27. Negative Overload Recovery
图6-28. Small-Signal Step Response
0.9
0.85
0.8
Faling
Rising
Sourcing
0.75
0.7
0.65
0.6
0.55
0.5
Sinking
0.45
0.4
0.35
-40
-20
0
20
40
60
80
100 120 140
Time (1 ms/div)
Temperature (èC)
D041
D040
VIN = 5 V
图6-30. Short-Circuit Current vs Temperature
图6-29. Settling Time
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6.7 Typical Characteristics (continued)
at TA= 25°C, VS = 12 V, VCM= VS_O1= VS_O2= VS/2, and RL= 10 kΩ(unless otherwise noted)
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10M
100M
Frequency (Hz)
1G
10G
D015
PRF = –10 dBm
图6-31. EMIRR vs Frequency
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7 Detailed Description
7.1 Overview
The ALM2402F-Q1 is a dual-power op amp qualified for use in automotive applications. Key features for this
device are low offset voltage, high output current drive capability, and high FPBW capability. The device also
offers protection features such as thermal shutdown and current limit. The 14-pin HTSSOP package minimizes
board space and power dissipation.
7.2 Functional Block Diagram
VCC
VS_O(1)
12
13
PMOS Current Limiting and
Biasing
IN(1)+
2
1
+
OUT(1)
EMI
OTA
Rejection
NMOS Current Limiting and
Biasing
IN(1)œ
œ
EN
EN
GND
VS
14
11
OTF/SH_DN
3
VCC
Internal
Thermal Detection
Circuitry
VCC
VS_O(2)
10
PMOS Current Limiting and
Biasing
IN(2)+
4
+
9
OUT(2)
EMI
OTA
Rejection
NMOS Current Limiting and
Biasing
IN(2)œ
5
6
œ
GND
EN
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7.3 Feature Description
7.3.1 OTF/SH_DN
The overtemperature and shutdown (OTF/SH_DN) pin is a bidirectional pin that allows both op amps to be put
into a low IQ state (~500 µA) when forced low or less than VIL_OTF. As a result of this pin being bidirectional, and
the respective enable and disable functionality, this pin must be pulled high or greater than VIH_OTF through a
pullup resistor; see the Electrical Characteristics table.
When the junction temperature of ALM2402F-Q1 exceeds the limits specified in the Recommended Operating
Conditions table, the OTF/SH_DN pin goes low to alert the application that both the outputs have turned off
because of an overtemperature event. Also, the OTF pin goes low if VS_O1 and VS_O2 are 0 V. In case of an
overtemperature event, the op amps are shut down even if OTF/SH_DN is forced high.
When OTF/SH_DN is pulled low and the op amps are shut down, the op amps are in an open loop, even when
there is negative feedback applied. This occurrence is due to the loss of the open-loop gain in the op amps when
the biasing is disabled. See 节7.4.1 for more details on open- and closed-loop considerations.
7.3.2 Output Stage Supply Voltage
The ALM2402F-Q1 uses three power rails. VS powers the op-amp signal path (OTA) and protection circuitry.
VS_O1 and VS_O2 power the output high side driver. Each supply can operate at separate voltage levels
(higher or lower). The minimum and maximum values listed in the Recommended Operating Conditions table are
voltages that enable the ALM2402F-Q1 to properly function at or near the specification listed in Electrical
Characteristics table.
7.3.3 Current-Limit and Short-Circuit Protection
Each op amp in the ALM2402F-Q1 has separate internal current limiting for the PMOS (high-side) and NMOS
(low-side) output transistors. If the output is shorted to ground then the PMOS (high-side) current limit is
activated, and limits the current to 750 mA nominally. If the output is shorted to supply then the NMOS (low-side)
current limit is activated and limits the current to 550 mA nominally at 25°C. The current limit value decreases
with increasing temperature as a result of the temperature coefficient of a base-emitter junction voltage.
Similarly, the current limit value increases at low temperatures.
In the case of short-to-ground scenarios, a programmable current limit for the PMOS (high-side) is achieved by
adding resistance between VS_O(x), where x = 1 or 2, and the supply VS. The added current limit resistor
reduces the drain-source voltage across the PMOS output transistor, thus reducing the output current drive
capability. For a desired current limit (ILIMIT), an appropriate current limiting resistor (Rlimit) is selected using
Equation 1.
RLIMIT = (VS -1.5) / ILIMIT
(1)
When current is limited, the safe limits for the die temperature must be taken in to account; see the
Recommended Operating Conditions and Absolute Maximum Ratings tables. With too much power dissipation,
the die temperature can surpass thermal shutdown limits; the op amp shuts down and reactivates after the die
has fallen below thermal limits. However, do not continuously operate the device in thermal hysteresis for long
periods of time (see the Absolute Maximum Ratings table).
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7.3.4 Input Common-Mode Overvoltage Clamps
The input common mode range of the ALM2402F-Q1 is between (V–) + 0.2 V and (V+) – 1.2 V (see the
Electrical Characteristics table). Staying within this range allows the op amps to perform and operate within the
specification listed in the Electrical Characteristics. Operating beyond these limits can cause distortion and
nonlinearities.
In order for the inputs to tolerate high voltages in the event of a short to supply, Zener diodes have been added
(see 图7-1). The current into this Zener diode is limited through internal resistors (10 kΩeach). When operating
near or above the Zener voltage (7 V), the additional voltage error caused by the mismatch in internal resistors
must be taken in to account. In unity gain configurations, the op amp forces both gate voltages to be equal to the
Zener voltage on the positive input pin, and ideally both Zeners sink the same amount of current and force the
output voltage to be equal to VIN. However, in reality, RN and RP and VZ between both Zener diodes do not
perfectly match, and have some percentage difference between their values. This occurrence leads to the output
being VO = VIN × (ΔR + ΔVZ) .
½
ALM2402F-Q1
RN
–
+
RP
+
VIN
–
图7-1. Schematic Including Input Clamps
7.3.5 Thermal Shutdown
If the die temperature exceeds safe limits, all outputs are disabled, and the OTF/SH_DN pin is driven low. After
the die temperature has fallen to a safe level, operation automatically resumes. The OTF/SH_DN pin is released
after operation has resumed.
When operating the die at a high temperature, the op amp toggles on and off between the thermal shutdown
hysteresis. In this event, the safe limits for the die temperature must be taken in to account; see the
Recommended Operating Conditions and Thermal Conditions tables. Do not continuously operate the device in
thermal hysteresis for long periods of time; see the Recommended Operating Conditions table.
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7.3.6 Output Stage
Designed as a high-voltage, high current operational amplifier, the ALM2402F-Q1 device delivers a robust output
drive capability. A class AB output stage with common-source transistors is used to achieve full rail-to-rail output
swing capability. For resistive loads up to 10 kΩ, the output swings typically to within 5 mV of either supply rail
regardless of the power-supply voltage applied. Different load conditions change the ability of the amplifier to
swing close to the rails.
Each output transistor has internal reverse diodes between drain and source that conduct if the output is forced
greater than the supply or less than ground (reverse current flow). These diodes can be used as flyback
protection in inductive-load driving applications. Limit the use of these diodes to pulsed operation to minimize
junction temperature overheating due to (VF × IF). Internal current limiting circuitry does not operate when current
is flown in the reverse direction and the reverse diodes are active.
7.3.7 EMI Susceptibility and Input Filtering
Op amps vary with regard to the susceptibility of the device to electromagnetic interference (EMI). If conducted
EMI enters the op amp, the dc offset observed at the amplifier output may shift from the nominal value while EMI
is present. This shift is a result of signal rectification associated with the internal semiconductor junctions. While
all op-amp pin functions can be affected by EMI, the signal input pins are likely to be the most susceptible. The
ALM2402F-Q1 incorporates an internal input low-pass filter that reduces the amplifiers response to EMI. Both
common-mode and differential mode filtering are provided by this filter.
Texas Instruments has developed the ability to accurately measure and quantify the immunity of an operational
amplifier over a broad frequency spectrum extending from 10 MHz to 990 MHz. The EMI rejection ratio (EMIRR)
metric allows op amps to be directly compared by the EMI immunity. Detailed information can also be found in
the EMI Rejection Ratio of Operational Amplifiers application report, available for download from www.ti.com.
7.4 Device Functional Modes
7.4.1 Open-Loop and Closed-Loop Operation
As a result of the very high open-loop dc gain of the ALM2402F-Q1, the device functions as a comparator in
open-loop for most applications. As noted in the Electrical Characteristics table, the majority of electrical
characteristics are verified in negative feedback, closed-loop configurations. Certain dc electrical characteristics,
like offset, may have a higher drift across temperature and lifetime when continuously operated in open loop
over the lifetime of the device.
7.4.2 Shutdown
When the OTF/SH_DN pin is left floating or is grounded, the op amp shuts down to a low IQ state and does not
operate; the op amp outputs go to a high-impedance state. See the OTF/SH_DN section for more detailed
information on the OTF/SH_DN pin.
表7-1. Shutdown Truth Table
NAME
LOGIC STATE
OP AMP STATE
Operating
High ( > VIH_OTF see Recommended Operating Conditions)
Low ( < VIL_OTF see Recommended Operating Conditions)
OTF/SH_DN
Shutdown (low IQ state)
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8 Application and Implementation
Note
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
8.1 Application Information
The ALM2402F-Q1 is a dual-power op amp with performance and protection features that are optimal for many
applications. For op amps, there are many general design consideration that must taken into account. The
following sections describe what to consider for most closed-loop applications, and gives a specific example of
the ALM2402F-Q1 being used in a motor-drive application.
8.1.1 Capacitive Load and Stability
The ALM2402F-Q1 is designed to be used in applications where driving a capacitive load is required. As with all
op amps, specific instances can occur where the ALM2402F-Q1 device can become unstable. The particular op-
amp circuit configuration, layout, gain, and output loading are some of the factors to consider when establishing
whether or not an amplifier is stable in operation. An op amp in the unity-gain (1 V/V) buffer configuration that
drives a capacitive load exhibits a greater tendency to be unstable than an amplifier operated at a higher-noise
gain. The capacitive load, in conjunction with the op-amp output resistance, creates a pole within the feedback
loop that degrades the phase margin. The degradation of the phase margin increases as the capacitive loading
increases. When operating in the unity-gain configuration, the ALM2402F-Q1 remains stable with a pure
capacitive load up to approximately 1 nF. Increasing the amplifier closed-loop gain allows the amplifier to drive
increasingly larger capacitance. This increased capability is evident when observing the overshoot response of
the amplifier at higher voltage gains.
One technique for increasing the capacitive load drive capability of the amplifier operating in a unity-gain
configuration is to insert a small resistor, typically 100 mΩto 10 Ω, in series with the output (RS), as shown in 图
8-1. This resistor significantly reduces the overshoot and ringing associated with large capacitive loads.
V+
RS
œ
VOUT
CL
+
RL
+
VIN
œ
图8-1. Capacitive Load Drive
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8.2 Typical Application
R2
R1
Resolver
Rotor
+
COSINE
Sensing
Coil
Excitation
Coil
Vbias
ALM2402F-Q1
+
CBL
SINE
R3
Sensing
Coil
R4
CBL
V+
V–
excite–
V+
V–
excite+
Resolver-to-Digital
Converter
图8-2. Resolver-Based Application
High-power ac and brushless DC (BLDC) motor-drive applications need angular and position feedback in order
to efficiently and accurately drive the motor. Position feedback can be achieved by using optical encoders, hall
sensors, or resolvers. Resolvers are the goto choice when environmental or longevity requirements are
challenging and extensive.
A resolver acts like a transformer with one primary coil and two secondary coils. The primary coil, or excitation
coil, is located on the rotor of the resolver. As the rotor of the resolver spins, the excitation coil induces a current
into the sine and cosine sensing coils. These coils are oriented 90 degrees from one another, and produce a
vector position read by the resolver to digital converter chip.
Resolver excitation coils can have a very low dc resistance (< 100 Ω), requiring a sink and a source of up to 200
mA from the excitation driver. The ALM2402F-Q1 can source and sink this current while providing current limiting
and thermal shutdown protection. Incorporating these protections in a resolver design can increase the life of the
end product.
The fundamental design steps and ALM2402F-Q1 benefits shown in this application example can be applied to
other inductive load applications, such as dc and servo motors.
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8.2.1 Design Requirements
For this design example, use the parameters listed in 表8-1 as the input parameters.
表8-1. Design Parameters
DESIGN PARAMETER
Ambient temperature range
Available supply voltages
EMC capacitance (CL)
EXAMPLE VALUE
–40°C to +125°C
12 V
50 nF
Excitation input voltage range
Excitation frequency
2 VRMS to 7 VRMS
10 kHz
8.2.2 Detailed Design Procedure
When using the ALM2402F-Q1 in a resolver application, determine:
• Resolver excitation input impedance or resistance and inductance: ZO= 100 + j188; (R = 100 Ωand L = 3
mH)
• Resolver transformation ration (VEXC / VSINCOS): 0.5 V/V at 10 kHz
• Package and RθJA: HTSSOP, 46.5°C/W
• Op amp maximum junction temperature: 150°C
• Op amp bandwidth: 1.3 MHz
• Op amp Slew Rate: 1.2 V/µs
8.2.2.1 Resolver Excitation Input (Op Amp Output)
Like a transformer, a resolver needs an alternating current input to function properly. The resolver receives
alternating current from the primary coil (excitation input) and creates a multiple of this input current on the
secondary sides (SIN, COS ports). When determining how to generate this alternating current, make sure to
understand the op amp abilities and limitations. For the excitation input, the resolver input impedance, stability
RMS voltage, and desired frequency must be taken in to account.
8.2.2.1.1 Excitation Voltage
The resolver primary winding or excitation coil can be driven by a single-ended op amp output with the other side
of the coil grounded, or differentially as shown in 图 8-2. A differential drive offers higher voltage (double) on to
the excitation coil, while not using as much output voltage headroom from the op amp. This larger output voltage
due to the differential drive leads to lower distortion on the output signal.
For this example, the resolver impedance is specified from 2 VRMS and 7 VRMS up to 20-kHz maximum
frequency. To highlight use with a 7 VRMS resolver, an excitation voltage of 10 VPP is applied from each channel
of the ALM2402F-Q1. The op amp is set in an inverting gain = –2 V/V, while applying an adequate common-
mode bias. These conditions give the required 7 VRMS differential output (3.5 VRMS per each op amp channel) to
the resolver primary winding without running into any op-amp headroom issues.
Another consideration for excitation is op-amp power dissipation. As described in the Power Dissipation and
Thermal Reliability section, power dissipation from the op amp can be lowered by driving the output peak
voltages close to the supply and ground voltages. With the very low VOH/VOL of the ALM2402F-Q1, lower power
dissipation is easily accomplished. See the Output Stage section for a further description of the rail-rail output
stage.
8.2.2.1.2 Excitation Frequency
The excitation frequency is chosen based on the desired secondary-side output signal resolution. The excitation
signal is similar to a sampling pulse in ADCs, with the real information being in the envelope created by the rotor.
With a GBW of 1.3 MHz, the ALM2402F-Q1 has more than enough open-loop gain at 10 kHz to create negligible
closed-loop gain error.
Along with GBW, the ALM2402F-Q1 has optimal THD and SR performance to achieve 10-VPP output per
channel.
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8.2.2.1.3 Excitation Impedance
Knowledge of the primary-side impedance is very important when choosing an op amp for this application. As
shown in 图 8-3, the excitation coil looks like an inductance in series with a resistance. Often, these values are
not given, or are given as a function of frequency or phase angle, and must by calculated from the Cartesian or
polar form. This calculation is a trivial task.
After the coil resistance is determined, the maximum or peak-peak current needed from ALM2402F-Q1 is
determined using Equation 2:
VPP
IOUT
=
RL
(2)
In this example, the peak-to-peak output current equates to approximately 100 mA. Each op amp handles the
peak current, with one op amp sinking current while the other op amp is sourcing current. Knowledge of the op
amp current is very important when determining the device power dissipation, a topic that is discussed in Power
Dissipation and Thermal Reliability.
R2
CEMC
Excitation Coil
Model
R1
–
+
RCRS
LEXC
Vbias
ALM2402F-Q1
CCRS
RL
+
–
R3
CEMC
R4
图8-3. Excitation Coil Implementation
As shown in 图8-3, designers often add a resistor (RCRS) in series with a capacitor (CCRS) to eliminate crossover
distortion. This distortion occurs as a result of the biasing of BJTs in a discrete implementation. With the
ALM2402F-Q1 rail-rail output and high-output current drive capability, this configuration is rarely needed.
Common practice is to also add EMC capacitors to the op-amp outputs to help shield other devices on the PCB
from the radiation created by the motor and resolver. When choosing CEMC, make sure to take the stability of the
op amp into account.
8.2.2.2 Resolver Output
As mentioned in 节 8.2.2.1.2, the excitation signal is similar to a sampling pulse in ADCs, with the real
information being in the envelope created by the rotor. Equation 3, Equation 4, and Equation 5 show the
behavior of the sin and cos outputs. The excitation signal is attenuated and enveloped by the voltage created
from the electromagnetic response of the rotating rotor. The resolver analog-output-to-digital converter filters out
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the excitation signal, and processes the sine and cosine angles produced by the rotor. Hence, signal integrity or
the sine and cosine envelope is most important in resolver design; although, some trade-offs in signal integrity of
the excitation signal can be made for cost or convenience. Often, a square wave or sawtooth signal is used to
accomplish excitation, as opposed to a sine wave.
VEXC = VPP ìsin(2pft)
(3)
(4)
(5)
VSIN = TR ì VPP ìsin(2pft)ìsin(q)
VCOS = TR ì VPP ìsin(2pft)ìcos(q)
8.2.2.3 Power Dissipation and Thermal Reliability
Power dissipation is critical to many industrial and automotive applications. Resolvers are typically chosen over
other position feedback techniques because of reliability and accuracy in harsh conditions and high
temperatures.
The ALM2402F-Q1 is capable of high output current with power-supply voltages up to 16 V. Internal power
dissipation increases when operating at high supply voltages. The power dissipated in the op amp (POPA) is
calculated using Equation 6:
VO(X)
POPA = (V+ - VO(X))ìIOUT = (V+ - VO(X))ì
RL
(6)
To calculate the worst-case power dissipation in the op amp, the ac and dc cases must be considered
separately.
In the case of constant output current (dc) to a resistive load, the maximum power dissipation in the op amp
occurs when the output voltage is half the positive supply voltage. This calculation assumes that the op amp is
sourcing current from the positive supply to a grounded load. If the op amp sinks current from a grounded load,
modify Equation 7 to include the negative supply voltage instead of the positive.
VO(X) (VO(X))2
POPA(MAX _DC) = POPA
(
) =
2
4RL
(7)
The maximum power dissipation in the op amp for a sinusoidal output current (ac) to a resistive load occurs
when the peak output voltage is 2/π times the supply voltage, given symmetrical supply voltages, as shown in
Equation 8:
2VO(X)
2∂(VO(X))2
p2 ∂RL
POPA(MAX _ AC) = POPA
(
) =
p
(8)
After the total power dissipation is determined, the junction temperature at the worst expected ambient
temperature case must be determined by using Equation 9:
TJ(MAX) = POPA ìRqJA + TA(MAX)
(9)
8.2.2.3.1 Improving Package Thermal Performance
The value of RθJA depends on the PCB layout. An external heat sink, a cooling mechanism such as a cold air
fan, or both, can help reduce RθJA and thus improve device thermal capabilities. See TI’s design support web
page at www.ti.com/thermal for general guidance on improving device thermal performance.
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8.2.3 Application Curves
The THD+N performance for the circuit described in the Excitation Voltage section is measured for a 10-kHz, 10-
V
PP output signal from each op-amp channel. These measurement results are displayed in 表8-2.
表8-2. Maximum Output Power and THD+N
LOAD IMPEDANCE
MAXIMUM OUTPUT POWER
(mW)
THD+N AT MAXIMUM OUTPUT POWER
(dB)
(Ω)
100
292
–50
图8-4 shows the THD+N performance for different input signal frequencies with a measurement bandwidth of 80
kHz. 图 8-5 shows the circuit response with load capacitances of up to 100 nF. Using a larger resistor in series
with the output, as shown in 节8.1.1 further improves phase margin.
1
-40
-60
-80
-100
100
90
80
70
60
50
40
30
20
10
G -1
G -2
RISO = 0
RISO = 5
RISO = 10
0.1
0.01
0.001
10
100
1000
Capactiance (pF)
10000
100000
100
1k
Frequency (Hz)
10k
D043
D044
图8-5. Small-Signal Overshoot vs Capacitive Load
图8-4. THD+N vs Frequency
9 Power Supply Recommendations
The ALM2402F-Q1 is specified for continuous operation from 4.5 V to 16 V (±2.25 V to ±8 V) for VS, and 3 V to
16V (±1.5 V to ±8 V) for VS_O(X); many specifications apply from –40°C to +125°C.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-
impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
Guidelines section.
CAUTION
Supply voltages larger than 18 V can permanently damage the device (see the Absolute Maximum
Ratings).
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10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close as possible to the device. A single bypass capacitor from V+ to ground is applicable for single
supply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current. For more detailed information, see
Circuit Board Layout Techniques.
• To reduce parasitic coupling, run the input traces as far away as possible from the supply or output traces. If
keeping the traces separate is not possible, then cross the sensitive trace perpendicular, as opposed to in
parallel with the noisy trace.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
10.2 Layout Example
This layout does not verify optimum thermal impedance performance. See TI’s design support web page at
www.ti.com/thermal for general guidance on improving device thermal performance.
图10-1. ALM2402F-Q1 Layout Example
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following: Texas Instruments, ALM2402F-Q1 Evaluation Module user's guide
11.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
ALM2402FQPWPRQ1
ACTIVE
HTSSOP
PWP
14
2000 RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
A2402FQ
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ALM2402FQPWPRQ1 HTSSOP PWP
14
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
HTSSOP PWP 14
SPQ
Length (mm) Width (mm) Height (mm)
356.0 356.0 35.0
ALM2402FQPWPRQ1
2000
Pack Materials-Page 2
GENERIC PACKAGE VIEW
PWP 14
4.4 x 5.0, 0.65 mm pitch
PowerPAD TSSOP - 1.2 mm max height
PLASTIC SMALL OUTLINE
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224995/A
www.ti.com
PACKAGE OUTLINE
PWP0014H
PowerPADTM TSSOP - 1.2 mm max height
S
C
A
L
E
2
.
4
0
0
PLASTIC SMALL OUTLINE
C
6.6
6.2
TYP
SEATING PLANE
PIN 1 ID
AREA
A
0.1 C
12X 0.65
14
1
2X
5.1
4.9
3.9
NOTE 3
7
8
0.30
14X
0.19
4.5
4.3
B
0.1
C A B
SEE DETAIL A
(0.15) TYP
4X (0.28)
NOTE 5
4X (0.1)
NOTE 5
8
7
THERMAL
PAD
0.25
GAGE PLANE
2.86
2.02
15
1.2 MAX
0.15
0.05
0 - 8
14
1
0.75
0.50
DETAIL A
(1)
TYPICAL
1.82
0.98
4224353/A 07/2018
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. Reference JEDEC registration MO-153.
5. Features may differ and may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
PWP0014H
PowerPADTM TSSOP - 1.2 mm max height
PLASTIC SMALL OUTLINE
(3.4)
NOTE 9
SOLDER MASK
DEFINED PAD
(1.82)
SYMM
SEE DETAILS
14X (1.5)
1
14
14X (0.45)
(1.1)
TYP
15
SYMM
(2.86)
(5)
NOTE 9
12X (0.65)
8
7
(
0.2) TYP
VIA
(R0.05) TYP
(1.1) TYP
METAL COVERED
BY SOLDER MASK
(5.8)
LAND PATTERN EXAMPLE
SCALE:10X
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
PADS 1-14
/A 07/2018
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
PWP0014H
PowerPADTM TSSOP - 1.2 mm max height
PLASTIC SMALL OUTLINE
(1.82)
BASED ON
0.125 THICK
STENCIL
14X (1.5)
(R0.05) TYP
1
14
14X (0.45)
15
(2.86)
SYMM
BASED ON
0.125 THICK
STENCIL
12X (0.65)
8
7
SEE TABLE FOR
METAL COVERED
BY SOLDER MASK
SYMM
(5.8)
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
SOLDER PASTE EXAMPLE
EXPOSED PAD
100% PRINTED SOLDER COVERAGE BY AREA
SCALE:10X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
2.03 X 3.20
1.86 X 2.86 (SHOWN)
1.66 X 2.61
0.125
0.15
0.175
1.54 X 2.42
4224353/A 07/2018
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
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