S30D150A [THINKISEMI]
30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers;
| 型号： | S30D150A |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers |
| 文件： | 总2页 (文件大小：560K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S30D35A thru S30D200A
S30D35A thru S30D200A
Pb Free Plating Product
30.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
TO-3PN/TO-3PB
Features
ꢀ Standard MBR matured technology with high reliablity
ꢀ Low forward voltage drop
ꢀ High current capability
Bottom Side Metal Heat Sink
ꢀ Low reverse leakage current
ꢀ High surge current capability
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
ꢀ Case: Heatsink TO-3PN/TO-3PB
ꢀ Epoxy: UL 94V-0 rate flame retardant
ꢀ
method 208
Terminals: Solderable per MIL-STD-202
ꢀ Polarity: As marked on diode body
ꢀ Mounting position: Any
ꢀ Weight: 6.5 gram approximately
Case
Case
Case
Case
Series
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Negative
Positive
Suffix "C"
Suffix "A"
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
S30D S30D S30D S30D S30D S30D S30D S30D
PARAMETER
SYMBOL
UNIT
35A
45A
50A
60A
90A 100A 150A 200A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
35
24
35
45
31
45
50
35
50
60
42
60
90
63
90
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
30
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
200
A
A
Peak repetitive reverse surge Current (Note 1)
2
-
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
0.75
0.85
0.95
0.92
1.02
0.98
1.05
-
IF=15A, TJ=125℃
VF
0.60
0.82
0.73
0.65
0.75
V
IF=30A, TJ=25℃
-
-
-
-
1.10
-
IF=30A, TJ=125℃
1
0.5
0.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
20
15
10
Voltage rate of change,(Rated VR)
Typical thermal resistance
10,000
1.4
dV/dt
RθJC
TJ
V/μs
℃
/W
℃
℃
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
S30D35A thru S30D200A
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
225
200
175
150
125
100
75
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
10
5
50
0
25
0
25
50
75
100
125
150
0
1
10
100
CASE TEMPERATURE (℃)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
10
100
10
TJ=125℃
TJ=125℃
1
TJ=25℃
1
0.1
TJ=25℃
0.1
0.01
0.01
0.001
S30D35A-S30D45A
S30D50A-S30D60A
S30D90A-S30D200A
S30D35A-S30D45A
S30D50A-S30D200A
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
10000
1000
100
100
10
1
f=1.0MHz
Vsig=50mVp-p
S30D35A-S30D45A
S30D50A-S30D60A
S30D90A-S30D200A
0.1
0.01
0.1
1
10
100
0.1
1
10
100
T-PULSE DURATION(s)
REVERSE VOLTAGE (V)
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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