S30D150CE [MOSPEC]
Schottky Barrier Rectifiers; 肖特基势垒整流器器型号: | S30D150CE |
厂家: | MOSPEC SEMICONDUCTOR |
描述: | Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSPEC
S30D150CE
Schottky Barrier Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
…Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
30 AMPERES
150 VOLTS
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*150℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
TO-3P
MAXIMUM RATINGS
Characteristic
Symbol
S30D150CE
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
RMS Reverse Voltage
VR(RMS)
105
V
A
MILLIMETERS
DIM
Average Rectifier Forward Current
Total Device (Rated VR), TC=100℃
15
30
IF(AV)
MIN
MAX
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
20.63
15.38
1.90
5.10
14.81
11.72
4.20
1.82
2.92
0.89
5.26
18.50
4.68
2.40
3.25
0.55
22.38
16.20
2.70
6.10
15.22
12.84
4.50
2.46
3.23
1.53
5.66
21.50
5.36
2.80
3.65
0.70
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
30
250
A
A
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions half-wave,
single phase, 60Hz)
IFSM
Operating and Storage Junction Temperature
Range
℃
TJ , Tstg
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
S30D150CE
Unit
Maximum Instantaneous Forward Voltage
( IF =15 Amp TC = 25℃)
( IF =15 Amp TC = 125℃)
0.95
0.85
VF
V
Common cathode
Suffix “C”
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.5
20
mA
S30D150CE
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
FIG-4 TYPICAL JUNCTION CAPACITANCE
PERCENT OF RATED REVERSE VOLTAGE (
)
REVERSE VOLTAGE (Volts)
FIG-5 PEAK FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
相关型号:
S30D16A0
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE
INFINEON
S30D16A0F
Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D16A0FPBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D16A0PBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE
INFINEON
S30D16B0
Silicon Controlled Rectifier, 550A I(T)RMS, 265000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE
INFINEON
S30D16B0F
Silicon Controlled Rectifier, 550A I(T)RMS, 265000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D16B0FPBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D16B0PBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE
INFINEON
S30D18A0
Silicon Controlled Rectifier, 550A I(T)RMS, 265000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-209AE
INFINEON
S30D18A0F
Silicon Controlled Rectifier, 550A I(T)RMS, 265000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D18A0FPBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN
INFINEON
S30D18A0PBF
Silicon Controlled Rectifier, 550A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, TO-209AE
INFINEON
©2020 ICPDF网 联系我们和版权申明